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Components list, symbol «2», page 5

  1. 2MBI75N-060 Fuji - IGBT(600v 75a)
  2. 2MBI75N-120 Fuji - IGBT(1200v 75a)
  3. 2MBI75P-140 Fuji - IGBT(1400v 75a)
  4. 2MBI75S Fuji - IGBT Module (S-Series) 2-pack IGBT 1200v 2x75a
  5. 2N0720A Semicoa - Package = TO-18 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 120 ; Vebo (V) = 7.0 ; Ic (A) = 0.50 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 5.00
  6. 2N0918UB Semicoa - Package = Cersot ; Level = Jantxv ; Vceo (V) = 15 ; Vcbo (V) = 30 ; Vebo (V) = 3.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 0.40
  7. 2N0930 Semicoa - Package = TO-18 ; Level = Jantxv ; Vceo (V) = 45 ; Vcbo (V) = 60 ; Vebo (V) = 6.0 ; Ic (A) = 0.03 ; Power (W) ta = 0.36 ; Rtja (C/W) = 485 ; Tstg/top (C) = -65 to +200 ; Hfe = 600 ; VCE(sat) (V) = 1.00
  8. 2N1008 Неопределенные - Alloy-junction Germanium Transistors
  9. 2N1008A Неопределенные - alloy-junction germanium transistors
  10. 2N1008B Неопределенные - alloy-junction germanium transistors
  11. 2N1011 Неопределенные - Germanium Transistors
  12. 2N1052 Central - Small Signal Transistors
  13. 2N1053 Central - Small Signal Transistors
  14. 2N1054 Central - Small Signal Transistors
  15. 2N1055 Central - Small Signal Transistors
  16. 2N1057 Неопределенные - alloy-junction germanium transistors
  17. 2N107 Неопределенные - alloy-junction germanium transistors
  18. 2N1086 Неопределенные - alloy-junction germanium transistors
  19. 2N1086A Неопределенные - alloy-junction germanium transistors
  20. 2N1087 Неопределенные - alloy-junction germanium transistors
  21. 2N1097 Неопределенные - alloy-junction germanium transistors
  22. 2N1098 Неопределенные - alloy-junction germanium transistors
  23. 2N111 Fairchild - Integrated N-Channel PowerTrench MOSFET and Schottky Diode
  24. 2N1116 Central - Small Signal Transistors
  25. 2N1117 Central - Small Signal Transistors
  26. 2N1118 Central - Small Signal Transistors
  27. 2N1119 Central - Small Signal Transistors
  28. 2N1131 Microsemi - Low Power Pnp Silicon Transistor
  29. 2N1131A Central - Small Signal Transistors
  30. 2N1131L Microsemi - LOW POWER PNP SILICON TRANSISTOR
  31. 2N1132 Microsemi - LOW POWER PNP SILICON TRANSISTOR
  32. 2N1132B Central - Small Signal Transistors
  33. 2N1132CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 50V ; IC(cont) = 0.6A ; HFE(min) = 30 ; HFE(max) = 90 ; @ Vce/ic = 10V / 150mA ; FT = 50MHz ; PD = 0.5W
  34. 2N1132DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 50V ; IC(cont) = 0.6A ; HFE(min) = 30 ; HFE(max) = 90 ; @ Vce/ic = 10V / 150mA ; FT = 50MHz ; PD = 0.5W
  35. 2N1132L Microsemi - LOW POWER PNP SILICON TRANSISTOR
  36. 2N1175 Неопределенные - alloy-junction germanium transistors
  37. 2N1175A Неопределенные - alloy-junction germanium transistors
  38. 2N1185 Неопределенные - alloy-junction germanium transistors
  39. 2N1186 Неопределенные - alloy-junction germanium transistors
  40. 2N1187 Неопределенные - alloy-junction germanium transistors
  41. 2N1189 Неопределенные - alloy-junction germanium transistors
  42. 2N1190 Неопределенные - alloy-junction germanium transistors
  43. 2N1191 Неопределенные - alloy-junction germanium transistors
  44. 2N1192 Неопределенные - alloy-junction germanium transistors
  45. 2N1193 Неопределенные - alloy-junction germanium transistors
  46. 2N1194 Неопределенные - alloy-junction germanium transistors
  47. 2N1258 Central - Small Signal Transistors
  48. 2N1259 Central - Small Signal Transistors
  49. 2N1273 Неопределенные - alloy-junction germanium transistors
  50. 2N1274 Неопределенные - alloy-junction germanium transistors
  51. 2N1302 Неопределенные - alloy-junction germanium transistors
  52. 2N1302 Central - Npn Germanium Transistor
  53. 2N1303 Неопределенные - alloy-junction germanium transistors
  54. 2N1304 Неопределенные - alloy-junction germanium transistors
  55. 2N1304 Central - NPN GERMANIUM TRANSISTOR
  56. 2N1305 Неопределенные - alloy-junction germanium transistors
  57. 2N1306 Неопределенные - alloy-junction germanium transistors
  58. 2N1306 Central - NPN GERMANIUM TRANSISTOR
  59. 2N1307 Неопределенные - alloy-junction germanium transistors
  60. 2N1308 Неопределенные - alloy-junction germanium transistors
  61. 2N1308 Central - NPN GERMANIUM TRANSISTOR
  62. 2N1309 Неопределенные - alloy-junction germanium transistors
  63. 2N1310 Неопределенные - alloy-junction germanium transistors
  64. 2N1311 Неопределенные - alloy-junction germanium transistors
  65. 2N1312 Неопределенные - alloy-junction germanium transistors
  66. 2N1372 Неопределенные - alloy-junction germanium transistors
  67. 2N1373 Неопределенные - alloy-junction germanium transistors
  68. 2N1374 Неопределенные - alloy-junction germanium transistors
  69. 2N1375 Неопределенные - alloy-junction germanium transistors
  70. 2N1376 Неопределенные - alloy-junction germanium transistors
  71. 2N1377 Неопределенные - alloy-junction germanium transistors
  72. 2N1378 Неопределенные - alloy-junction germanium transistors
  73. 2N1379 Неопределенные - alloy-junction germanium transistors
  74. 2N1380 Неопределенные - alloy-junction germanium transistors
  75. 2N1381 Неопределенные - alloy-junction germanium transistors
  76. 2N1382 Неопределенные - alloy-junction germanium transistors
  77. 2N1383 Неопределенные - alloy-junction germanium transistors
  78. 2N1404 Неопределенные - alloy-junction germanium transistors
  79. 2N1408 Неопределенные - alloy-junction germanium transistors
  80. 2N1413 Неопределенные - alloy-junction germanium transistors
  81. 2N1414 Неопределенные - alloy-junction germanium transistors
  82. 2N1415 Неопределенные - alloy-junction germanium transistors
  83. 2N1420 Central - Small Signal Transistors
  84. 2N1445 Central - Small Signal Transistors
  85. 2N1479 Central - Small Signal Transistors
  86. 2N1479 Central - Npn Silicon Transistor
  87. 2N1480 Central - Small Signal Transistors
  88. 2N1480 Central - NPN SILICON TRANSISTOR
  89. 2N1481 Central - Small Signal Transistors
  90. 2N1481 Central - NPN SILICON TRANSISTOR
  91. 2N1482 Central - Small Signal Transistors
  92. 2N1482 Central - NPN SILICON TRANSISTOR
  93. 2N1483 Microsemi - Npn Silicon Medium Power Transistor
  94. 2N1484 Microsemi - NPN SILICON MEDIUM POWER TRANSISTOR
  95. 2N1485 Microsemi - NPN SILICON MEDIUM POWER TRANSISTOR
  96. 2N1486 Microsemi - NPN SILICON MEDIUM POWER TRANSISTOR
  97. 2N1487 Microsemi - Npn Silicon High Power Transistor
  98. 2N1488 Microsemi - NPN SILICON HIGH POWER TRANSISTOR
  99. 2N1489 Microsemi - NPN SILICON HIGH POWER TRANSISTOR
  100. 2N1490 Microsemi - NPN SILICON HIGH POWER TRANSISTOR
  101. 2N1507 Central - Small Signal Transistors
  102. 2N155 Неопределенные - germanium transistors
  103. 2N156 Неопределенные - germanium transistors
  104. 2N1573 Central - Small Signal Transistors
  105. 2N1574 Central - Small Signal Transistors
  106. 2N158 Неопределенные - germanium transistors
  107. 2N1595 Неопределенные - Silicon Thyristor(low-current Silicon Controlled Rectifiers InA Three-lead Package Ideal For Printed-circuit)
  108. 2N1596 Неопределенные - SILICON THYRISTOR(low-current silicon controlled rectifiers inA three-lead package ideal for printed-circuit)
  109. 2N1597 Неопределенные - SILICON THYRISTOR(low-current silicon controlled rectifiers inA three-lead package ideal for printed-circuit)
  110. 2N1598 Неопределенные - SILICON THYRISTOR(low-current silicon controlled rectifiers inA three-lead package ideal for printed-circuit)
  111. 2N1599 Неопределенные - SILICON THYRISTOR(low-current silicon controlled rectifiers inA three-lead package ideal for printed-circuit)
  112. 2N1605 Неопределенные - alloy-junction germanium transistors
  113. 2N1613 Philips - Npn Medium Power Transistor
  114. 2N1613 STMicroelectronics - Switches and Universal Amplifiers
  115. 2N1613 Micro Electronics - Npn Lisicon Planar Epitaxial Transistors
  116. 2N1613 Fairchild - Npn Small Signal General Purpose Amplifiers
  117. 2N1613A Microsemi - NPN Transistor, Package : TO-39
  118. 2N1613B Central - Small Signal Transistors
  119. 2N1613L Microsemi - NPN Transistor, Package : TO-5
  120. 2N1613L SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 50V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 70MHz ; PD = 0.8W
  121. 2N1614 Неопределенные - alloy-junction germanium transistors
  122. 2N1615 Central - Small Signal Transistors
  123. 2N1616 SemeLAB - Npn Silicon Transistor
  124. 2N1616 Solitron -
  125. 2N1617 SemeLAB - NPN SILICON TRANSISTOR
  126. 2N1618 SemeLAB - Npn Silicon Transistor
  127. 2N1618 Solitron -
  128. 2N1671 ASI - Unijunction Transistor
  129. 2N1676 Central - Small Signal Transistors
  130. 2N167A Неопределенные - alloy-junction germanium transistors
  131. 2N169 Неопределенные - alloy-junction germanium transistors
  132. 2N1692 SunLED - silicon transistors UHF/VHF power transistors
  133. 2N1693 SunLED - silicon transistors UHF/VHF power transistors
  134. 2N169A Неопределенные - alloy-junction germanium transistors
  135. 2N170 Неопределенные - alloy-junction germanium transistors
  136. 2N1700 Central - Small Signal Transistors
  137. 2N1705 Неопределенные - alloy-junction germanium transistors
  138. 2N1706 Неопределенные - alloy-junction germanium transistors
  139. 2N1707 Неопределенные - alloy-junction germanium transistors
  140. 2N1711 Central - Small Signal Transistors
  141. 2N1711 STMicroelectronics - SWITCHES and UNIVERSAL AMPLIFIERS
  142. 2N1711 Micro Electronics - NPN LISICON PLANAR EPITAXIAL TRANSISTORS
  143. 2N1711 Philips - Npn Medium Power Transistor
  144. 2N1711 Boca - General Purpose Transistor Npn Silicon
  145. 2N1711 Microsemi - Npn Low Power Silicon Transistor
  146. 2N1711 Boca - General Purpose Transistor (npn Silicon)
  147. 2N1711B Central - Small Signal Transistors
  148. 2N1711S Microsemi - NPN Transistor, Package : TO-39
  149. 2N1716 Central - Small Signal Transistors
  150. 2N1717 Central - Small Signal Transistors
  151. 2N1718 Solitron -
  152. 2N1720 Solitron -
  153. 2N1722 Microsemi - Npn Silicon High Power Transistor
  154. 2N1724 Microsemi - NPN SILICON HIGH POWER TRANSISTOR
  155. 2N1724 Solitron -
  156. 2N1724A Microsemi - NPN Transistor, Package : TO-61
  157. 2N1724A Solitron -
  158. 2N1725 Solitron -
  159. 2N173 Неопределенные - germanium transistors
  160. 2N174 Неопределенные - germanium transistors
  161. 2N176 Неопределенные - germanium transistors
  162. 2N1770A Central - Scrs
  163. 2N1771A Central - SCRs
  164. 2N1772A Central - SCRs
  165. 2N1773A Central - SCRs
  166. 2N1774A Central - SCRs
  167. 2N1775A Central - SCRs
  168. 2N1776A Central - SCRs
  169. 2N1777A Central - SCRs
  170. 2N1778A Central - SCRs
  171. 2N1792 Powerex - Phase Control Scr 70 Amoeres Average(110 Rms) 600 Volts
  172. 2N1793 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  173. 2N1794 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  174. 2N1794 Microsemi - Silicon Controlled Rectifier
  175. 2N1795 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  176. 2N1795 Microsemi - Silicon Controlled Rectifier
  177. 2N1796 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  178. 2N1796 Microsemi - Silicon Controlled Rectifier
  179. 2N1797 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  180. 2N1797 Microsemi - Silicon Controlled Rectifier
  181. 2N1798 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  182. 2N1798 Microsemi - Silicon Controlled Rectifier
  183. 2N1799 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  184. 2N1799 Microsemi - Silicon Controlled Rectifier
  185. 2N1800 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  186. 2N1800 Microsemi - Silicon Controlled Rectifier
  187. 2N1801 Microsemi - Silicon Controlled Rectifier
  188. 2N1802 Microsemi - Silicon Controlled Rectifier
  189. 2N1803 Microsemi - Silicon Controlled Rectifier
  190. 2N1804 Microsemi - Silicon Controlled Rectifier
  191. 2N1805 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  192. 2N1806 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  193. 2N1807 Microsemi - Silicon Controlled Rectifier, Package : TO-209AC
  194. 2N1808 Неопределенные - alloy-junction germanium transistors
  195. 2N187 Неопределенные - alloy-junction germanium transistors
  196. 2N1870 Microsemi - Scrs 1.25 Amp, Planear
  197. 2N1870A Microsemi - SCRs 1.25 Amp, Planear
  198. 2N1870A-2N1874A Microsemi - SCRS 1.25 Amp, Planar
  199. 2N1871 Microsemi - SCRs 1.25 Amp, Planear
  200. 2N1871A Microsemi - SCRs 1.25 Amp, Planear
  201. 2N1872 Microsemi - Silicon Controlled Rectifier, Package : TO-9
  202. 2N1872A Microsemi - SCRs 1.25 Amp, Planear
  203. 2N1873 Microsemi - Silicon Controlled Rectifier, Package : TO-9
  204. 2N1873A Microsemi - SCRs 1.25 Amp, Planear
  205. 2N1874 Microsemi - Silicon Controlled Rectifier, Package : TO-9
  206. 2N1874A Microsemi - SCRs 1.25 Amp, Planear
  207. 2N187A Неопределенные - alloy-junction germanium transistors
  208. 2N188 Неопределенные - alloy-junction germanium transistors
  209. 2N1889 Central - Small Signal Transistors
  210. 2N188A Неопределенные - alloy-junction germanium transistors
  211. 2N189 Неопределенные - alloy-junction germanium transistors
  212. 2N1890 Central - Small Signal Transistors
  213. 2N1890 Microsemi - NPN LOW POWER SILICON TRANSISTOR
  214. 2N1890S Microsemi - NPN Transistor, Package : TO-39
  215. 2N1893 Semicoa - Chip Type 2C1893 Geometry 4500 Polarity NPN
  216. 2N1893 Boca - GENERAL PURPOSE TRANSISTOR NPN SILICON
  217. 2N1893 Philips - Npn Medium Power Transistor
  218. 2N1893 STMicroelectronics - General Purpose High-voltage Type
  219. 2N1893 Microsemi - Npn Bipolar Transistor
  220. 2N1893 Semicoa - Type 2n1893 Geometry 4500 Polarity Npn
  221. 2N1893 Microsemi - Npn Low Power Silicon Transistor
  222. 2N1893A Central - Small Signal Transistors
  223. 2N1893CSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 0.5A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = 50MHz ; PD = 0.8W
  224. 2N1893J Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 120 ; Vebo (V) = 7.0 ; Ic (A) = 0.50 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 5.00
  225. 2N1893JV Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 120 ; Vebo (V) = 7.0 ; Ic (A) = 0.50 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 5.00
  226. 2N1893JX Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 120 ; Vebo (V) = 7.0 ; Ic (A) = 0.50 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 5.00
  227. 2N1893S Semicoa - Chip Type 2C1893 Geometry 4500 Polarity NPN
  228. 2N1893S Microsemi - NPN LOW POWER SILICON TRANSISTOR
  229. 2N1893S Semicoa - Type 2n1893s Geometry 4500 Polarity Npn
  230. 2N1893SJ Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 120 ; Vebo (V) = 7.0 ; Ic (A) = 0.50 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 5.00
  231. 2N1893SJV Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 120 ; Vebo (V) = 7.0 ; Ic (A) = 0.50 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 5.00
  232. 2N1893SJX Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 120 ; Vebo (V) = 7.0 ; Ic (A) = 0.50 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 5.00
  233. 2N1893UB Semicoa - Chip Type 2C1893 Geometry 4500 Polarity NPN
  234. 2N1893X SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 0.6A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = 50MHz ; PD = 0.9W
  235. 2N190 Неопределенные - alloy-junction germanium transistors
  236. 2N1909 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  237. 2N1909-2N1792 Powerex -
  238. 2N191 Неопределенные - alloy-junction germanium transistors
  239. 2N1910 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  240. 2N1911 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  241. 2N1912 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  242. 2N1913 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  243. 2N1914 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  244. 2N1915 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  245. 2N1916 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts
  246. 2N192 Неопределенные - alloy-junction germanium transistors
  247. 2N1924 Неопределенные - alloy-junction germanium transistors
  248. 2N1925 Неопределенные - alloy-junction germanium transistors
  249. 2N1926 Неопределенные - alloy-junction germanium transistors
  250. 2N1973 Central - Small Signal Transistors
  251. 2N1974 Central - Small Signal Transistors
  252. 2N1975 Central - Small Signal Transistors
  253. 2N1983 Central - SMALL SIGNAL TRANSISTORS
  254. 2N1984 Central - SMALL SIGNAL TRANSISTORS
  255. 2N1985 Central - SMALL SIGNAL TRANSISTORS
  256. 2N1986 Central - SMALL SIGNAL TRANSISTORS
  257. 2N1987 Central - SMALL SIGNAL TRANSISTORS
  258. 2N1988 Central - SMALL SIGNAL TRANSISTORS
  259. 2N1989 Central - SMALL SIGNAL TRANSISTORS
  260. 2N1990 Central - SMALL SIGNAL TRANSISTORS
  261. 2N1991 SemeLAB - Bipolar Pnp Device InA Hermetically Sealed To39 Metal Package
  262. 2N1991 Central - Small Signal Transistors
  263. 2N1997 Неопределенные - alloy-junction germanium transistors
  264. 2N1998 Неопределенные - alloy-junction germanium transistors
  265. 2N1999 Неопределенные - alloy-junction germanium transistors
  266. 2N2000 Неопределенные - alloy-junction germanium transistors
  267. 2N2001 Неопределенные - alloy-junction germanium transistors
  268. 2N2017 Central - SMALL SIGNAL TRANSISTORS
  269. 2N2023 Microsemi - Silicon Controlled Rectifiers
  270. 2N2024 Microsemi - SILICON CONTROLLED RECTIFIERS
  271. 2N2025 Microsemi - SILICON CONTROLLED RECTIFIERS
  272. 2N2026 Microsemi - SILICON CONTROLLED RECTIFIERS
  273. 2N2027 Microsemi - SILICON CONTROLLED RECTIFIERS
  274. 2N2028 Microsemi - SILICON CONTROLLED RECTIFIERS
  275. 2N2029 Microsemi - SILICON CONTROLLED RECTIFIERS
  276. 2N2030 Microsemi - SILICON CONTROLLED RECTIFIERS
  277. 2N2049 Central - SMALL SIGNAL TRANSISTORS
  278. 2N2060 Microsemi - Unitized Dual Npn Silicon Transistor
  279. 2N2060 Semicoa - Silicon Npn Transistor
  280. 2N2060 Central - Dual Transistors
  281. 2N2060(CAN) Semicoa - Silicon NPN Transistor
  282. 2N2060A Central - Dual Transistors
  283. 2N2060A SemeLAB - Dual Amplifier Transistor
  284. 2N2060ADCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 80V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 5V / 10mA ; FT = 60MHz ; PD = 0.6W
  285. 2N2060DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 80V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 5V / 10mA ; FT = 60MHz ; PD = 0.6W
  286. 2N2060J Semicoa - Silicon NPN Transistor
  287. 2N2060JV Semicoa - Silicon NPN Transistor
  288. 2N2060JX Semicoa - Silicon NPN Transistor
  289. 2N2060L Microsemi - UNITIZED DUAL NPN SILICON TRANSISTOR
  290. 2N2060M Central -
  291. 2N20906A Siemens - Pnp Silicon Planar Transistors
  292. 2N20907A Siemens - PNP SILICON PLANAR TRANSISTORS
  293. 2N2102 STMicroelectronics - General Purpose Amplifier and Switch
  294. 2N2102 Boca - Amplifier Transistor Npn Silicon
  295. 2N2102 Micro Electronics - Complememtary Silicon Af Medium Power Amplifiers & Switches
  296. 2N2102A Central - SMALL SIGNAL TRANSISTORS
  297. 2N2102L SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 65V ; IC(cont) = 2A ; HFE(min) = 35 ; HFE(max) = - ; @ Vce/ic = 10V / 10mA ; FT = 60MHz ; PD = 1W
  298. 2N2107 Central - SMALL SIGNAL TRANSISTORS
  299. 2N2150 Microsemi - Npn Power Silicon Transistor
  300. 2N2150 Solitron -
  301. 2N2151 Microsemi - NPN POWER SILICON TRANSISTOR
  302. 2N2151 Solitron -
  303. 2N2151 Microsemi - 5 Amp, 100v, Planar, Npn Power Transistors Jan, Jantx
  304. 2N2171 Неопределенные - alloy-junction germanium transistors
  305. 2N2175 Central - SMALL SIGNAL TRANSISTORS
  306. 2N2177 Central - SMALL SIGNAL TRANSISTORS
  307. 2N2188 SunLED - silicon transistors UHF/VHF power transistors
  308. 2N2189 SunLED - silicon transistors UHF/VHF power transistors
  309. 2N2190 SunLED - silicon transistors UHF/VHF power transistors
  310. 2N2191 SunLED - silicon transistors UHF/VHF power transistors
  311. 2N2192 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO39 Metal Package.(40V, 1A)
  312. 2N2192 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 1A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 50MHz ; PD = 0.8W
  313. 2N2192A SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 1A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 50MHz ; PD = 0.8W
  314. 2N2192B Central - SMALL SIGNAL TRANSISTORS
  315. 2N2192L SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 40V ; IC(cont) = 1A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 50MHz ; PD = 0.8W
  316. 2N2193 Micro Electronics - Npn Silicon Transistor
  317. 2N2193B Central - SMALL SIGNAL TRANSISTORS
  318. 2N2194 SemeLAB - Bipolar Npn Device InA Hermetically Sealed To39 Metal Package.
  319. 2N2194A SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 1A ; HFE(min) = 2.5 ; HFE(max) = - ; @ Vce/ic =V / 0mA ; FT = 50MHz ; PD = 0.8W
  320. 2N2195B Central - SMALL SIGNAL TRANSISTORS
  321. 2N2205 Central - Small Signal Transistors
  322. 2N2218 Siemens - Npn Silicon Planar Transistors
  323. 2N2218 STMicroelectronics - High-speed Switches
  324. 2N2218 SemeLAB - Bipolar Npn Device InA Hermetically Sealed To39 Metal Package.
  325. 2N2218 Microsemi - Npn Switching Silicon Transistor
  326. 2N2218 Dionics - NPN Silicon High Current Transistor Chips
  327. 2N2218-2N2219 STMicroelectronics - HIGH-SPEED SWITCHES
  328. 2N2218A Central - SMALL SIGNAL TRANSISTORS
  329. 2N2218A Siemens - NPN Silicon Planar Transistors
  330. 2N2218A Microsemi - NPN SWITCHING SILICON TRANSISTOR
  331. 2N2218A Boca - Npn Silicon Planar Switching Transistors
  332. 2N2218A Dionics - NPN Silicon High Current Transistor Chips
  333. 2N2218A Microsemi - Small Signal Bipolar Npn Silicon
  334. 2N2218ACECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.8W
  335. 2N2218AJ Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  336. 2N2218AJV Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  337. 2N2218AJX Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  338. 2N2218AL Microsemi - NPN SWITCHING SILICON TRANSISTOR
  339. 2N2218ALJ Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  340. 2N2218ALJX Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  341. 2N2218AX SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 175 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.8W
  342. 2N2218CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 30V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.8W
  343. 2N2218J Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  344. 2N2218JV Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  345. 2N2218JX Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  346. 2N2218L Microsemi - NPN Transistor, Package : TO-5
  347. 2N2218X SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 30V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 175 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.8W
  348. 2N2219 Semicoa - Chip Type 2C2222A Geometry 0400 Polarity NPN
  349. 2N2219 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
  350. 2N2219 Siemens - NPN Silicon Planar Transistors
  351. 2N2219 STMicroelectronics - HIGH-SPEED SWITCHES
  352. 2N2219 Microsemi - NPN SWITCHING SILICON TRANSISTOR
  353. 2N2219 Philips - Npn Switching Transistors
  354. 2N2219 Dionics - NPN Silicon High Current Transistor Chips
  355. 2N2219A Semicoa - Chip Type 2C2222A Geometry 0400 Polarity NPN
  356. 2N2219A Central - SMALL SIGNAL TRANSISTORS
  357. 2N2219A Siemens - NPN Silicon Planar Transistors
  358. 2N2219A Microsemi - NPN SWITCHING SILICON TRANSISTOR
  359. 2N2219A Boca - NPN SILICON PLANAR SWITCHING TRANSISTORS
  360. 2N2219A Philips - NPN switching transistors
  361. 2N2219A STMicroelectronics - High Speed Switches
  362. 2N2219A MCC - Small Signal Bipolar Npn Silicon
  363. 2N2219A Dionics - NPN Silicon High Current Transistor Chips
  364. 2N2219A Semicoa - Type 2n2219a Geometry 0400 Polarity Npn
  365. 2N2219A Microsemi - Small Signal Bipolar Npn Silicon
  366. 2N2219ACECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.8W
  367. 2N2219AJ Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  368. 2N2219AJS Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  369. 2N2219AJV Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  370. 2N2219AJX Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  371. 2N2219AL Semicoa - Chip Type 2C2222A Geometry 0400 Polarity NPN
  372. 2N2219AL Microsemi - NPN SWITCHING SILICON TRANSISTOR
  373. 2N2219AL Semicoa - Type 2n2219al Geometry 0400 Polarity Npn
  374. 2N2219ALJ Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  375. 2N2219ALJS Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  376. 2N2219ALJX Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  377. 2N2219CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 30V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.8W
  378. 2N2219J Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  379. 2N2219JS Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  380. 2N2219JV Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  381. 2N2219JX Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.8 ; Rtja (C/W) = ; Tstg/top (C) = -55 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  382. 2N2219L Microsemi - NPN Transistor, Package : TO-5
  383. 2N222 Motorola - Amplifier Transistors
  384. 2N2220 Central - Small Signal Transistors
  385. 2N2220 Siemens - Npn Silicon Planar Transistors
  386. 2N2221 STMicroelectronics - HIGH-SPEED SWITCHES
  387. 2N2221 Siemens - NPN Silicon Planar Transistors
  388. 2N2221 Dionics - NPN Silicon High Current Transistor Chips
  389. 2N2221-2N2222 STMicroelectronics - HIGH-SPEED SWITCHES
  390. 2N2221A Central - Small Signal Transistors
  391. 2N2221A Siemens - Npn Silicon Planar Transistors
  392. 2N2221A Boca - Npn Silicon Planar Switching Transistors
  393. 2N2221A Microsemi - Small Signal Bipolar Npn Silicon
  394. 2N2221A Dionics - NPN Silicon High Current Transistor Chips
  395. 2N2221A Microsemi - Npn Silicon Switching Transistor
  396. 2N2221ACECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  397. 2N2221ACSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  398. 2N2221ACSMCECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  399. 2N2221ADCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.6W
  400. 2N2221AL Microsemi - NPN SILICON SWITCHING TRANSISTOR
  401. 2N2221AUA Microsemi - NPN SILICON SWITCHING TRANSISTOR
  402. 2N2221AUB Microsemi - NPN SILICON SWITCHING TRANSISTOR
  403. 2N2221AX SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 200 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  404. 2N2221CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 30V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  405. 2N2221CSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 30V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  406. 2N2221CSMCECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 30V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  407. 2N2221DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.6W
  408. 2N2222 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO18 Metal Package.
  409. 2N2222 Semicoa - Chip Type 2C2222A Geometry 0400 Polarity NPN
  410. 2N2222 STMicroelectronics - HIGH-SPEED SWITCHES
  411. 2N2222 Siemens - NPN Silicon Planar Transistors
  412. 2N2222 Philips - Npn Switching Transistors
  413. 2N2222 Micro Electronics - Npn Silicon Planar Epitaxial Transistors
  414. 2N2222 Dionics - NPN Silicon High Current Transistor Chips
  415. 2N2222A Semicoa - Chip Type 2C2222A Geometry 0400 Polarity NPN
  416. 2N2222A Central - Small Signal Transistors
  417. 2N2222A STMicroelectronics - HIGH SPEED SWITCHES
  418. 2N2222A Siemens - NPN SILICON PLANAR TRANSISTORS
  419. 2N2222A Boca - NPN SILICON PLANAR SWITCHING TRANSISTORS
  420. 2N2222A Microsemi - NPN SILICON SWITCHING TRANSISTOR
  421. 2N2222A Philips - NPN switching transistors
  422. 2N2222A Micro Electronics - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  423. 2N2222A SemeLAB - High Speed Medium Power, Npn Switching Transistor
  424. 2N2222A Dionics - NPN Silicon High Current Transistor Chips
  425. 2N2222A Semicoa - Type 2n2222a Geometry 0400 Polarity Npn
  426. 2N2222A-220M-ISO SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  427. 2N2222A/2907ADCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  428. 2N2222AB Microsemi - Switching Transistor Npn Silicon
  429. 2N2222AB-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  430. 2N2222ABC Microsemi - SWITCHING TRANSISTOR NPN SILICON
  431. 2N2222ABC-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  432. 2N2222ABS Microsemi - SWITCHING TRANSISTOR NPN SILICON
  433. 2N2222ABS-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  434. 2N2222ACECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  435. 2N2222ACSM SemeLAB - High Speed, Medium Power, Npn Switching Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  436. 2N2222ACSM4 SemeLAB - High Speed, Medium Power, Npn Switching Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  437. 2N2222ACSM4R SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC3 (MO-041BA) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.35W
  438. 2N2222ACSMCECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  439. 2N2222AD Microsemi - SWITCHING TRANSISTOR NPN SILICON
  440. 2N2222AD-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  441. 2N2222ADC Microsemi - SWITCHING TRANSISTOR NPN SILICON
  442. 2N2222ADC-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  443. 2N2222ADCSM SemeLAB - Dual High Speed, Medium Power Npn Switching Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  444. 2N2222ADCSMCECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.6W
  445. 2N2222ADIE Microsemi - SWITCHING TRANSISTOR NPN SILICON
  446. 2N2222ADS Microsemi - SWITCHING TRANSISTOR NPN SILICON
  447. 2N2222ADS-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  448. 2N2222AJ Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  449. 2N2222AJS Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  450. 2N2222AJV Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  451. 2N2222AJX Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  452. 2N2222AL Microsemi - NPN SILICON SWITCHING TRANSISTOR
  453. 2N2222AU Microsemi - SWITCHING TRANSISTOR NPN SILICON
  454. 2N2222AU-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  455. 2N2222AUA Microsemi - NPN SILICON SWITCHING TRANSISTOR
  456. 2N2222AUB Semicoa - Chip Type 2C2222A Geometry 0400 Polarity NPN
  457. 2N2222AUB Microsemi - NPN SILICON SWITCHING TRANSISTOR
  458. 2N2222AUB Semicoa - Type 2n2222aub Geometry 0400 Polarity Npn
  459. 2N2222AUBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  460. 2N2222AUBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 75 ; Vebo (V) = 6.0 ; Ic (A) = 0.80 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.30
  461. 2N2222AUC Microsemi - SWITCHING TRANSISTOR NPN SILICON
  462. 2N2222AUC-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  463. 2N2222AUS Microsemi - SWITCHING TRANSISTOR NPN SILICON
  464. 2N2222AUS-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  465. 2N2222AV Microsemi - SWITCHING TRANSISTOR NPN SILICON
  466. 2N2222AV-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  467. 2N2222AVC Microsemi - SWITCHING TRANSISTOR NPN SILICON
  468. 2N2222AVC-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  469. 2N2222AVS Microsemi - SWITCHING TRANSISTOR NPN SILICON
  470. 2N2222AVS-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  471. 2N2222AW Microsemi - SWITCHING TRANSISTOR NPN SILICON
  472. 2N2222AW-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  473. 2N2222AWC Microsemi - SWITCHING TRANSISTOR NPN SILICON
  474. 2N2222AWC-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  475. 2N2222AWS Microsemi - SWITCHING TRANSISTOR NPN SILICON
  476. 2N2222AWS-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  477. 2N2222AX Microsemi - SWITCHING TRANSISTOR NPN SILICON
  478. 2N2222AX-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  479. 2N2222AXC Microsemi - SWITCHING TRANSISTOR NPN SILICON
  480. 2N2222AXC-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  481. 2N2222AXCSM SemeLAB - Bipolar NPN Device inA Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications
  482. 2N2222AXS Microsemi - SWITCHING TRANSISTOR NPN SILICON
  483. 2N2222AXS-1 Microsemi - SWITCHING TRANSISTOR NPN SILICON
  484. 2N2222CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 30V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  485. 2N2222CSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  486. 2N2222CSMCECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.5W
  487. 2N2222DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.6W
  488. 2N2222DCSMCECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.8A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 250MHz ; PD = 0.6W
  489. 2N2223 Central - Dual Transistors
  490. 2N2223A Central - Dual Transistors
  491. 2N2223A SemeLAB - Dual Npn Transistor In To77 Hermetic Package
  492. 2N2237 Central - SMALL SIGNAL TRANSISTORS
  493. 2N2242 Central - Small Signal Transistors
  494. 2N2243A SemeLAB - Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
  495. 2N2243A Central - SMALL SIGNAL TRANSISTORS
  496. 2N2270 Central - SMALL SIGNAL TRANSISTORS
  497. 2N2270 Неопределенные - High-speed Powwer Transistors(silicon Npn Planar Transistor)
  498. 2N2270AL SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 45V ; IC(cont) = 1A ; HFE(min) = 50 ; HFE(max) = 200 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
  499. 2N2297 Central - SMALL SIGNAL TRANSISTORS
  500. 2N2303 Central - SMALL SIGNAL TRANSISTORS
  501. 2N2309 Central - SMALL SIGNAL TRANSISTORS
  502. 2N2323 Microsemi - Silicon Controlled Rectifier
  503. 2N2323-2N2329 Microsemi - SCRS 1.6 Amp, Planar
  504. 2N2323A Microsemi - SILICON CONTROLLED RECTIFIER
  505. 2N2323A-2N2328A Microsemi - SCRS 1.6 Amp, Planar
  506. 2N2323AS Microsemi - SILICON CONTROLLED RECTIFIER
  507. 2N2323AS-2N2328AS Microsemi - SCRS 1.6 Amp, Planar
  508. 2N2323S Microsemi - SILICON CONTROLLED RECTIFIER
  509. 2N2323S-2N2329S Microsemi - SCRS 1.6 Amp, Planar
  510. 2N2324 Microsemi - SILICON CONTROLLED RECTIFIER
  511. 2N2324A Microsemi - SILICON CONTROLLED RECTIFIER
  512. 2N2324AS Microsemi - SILICON CONTROLLED RECTIFIER
  513. 2N2324S Microsemi - SILICON CONTROLLED RECTIFIER
  514. 2N2325 Microsemi - SILICON CONTROLLED RECTIFIER
  515. 2N2325A Microsemi - SILICON CONTROLLED RECTIFIER
  516. 2N2326 Microsemi - SILICON CONTROLLED RECTIFIER
  517. 2N2326A Microsemi - SILICON CONTROLLED RECTIFIER
  518. 2N2326AS Microsemi - SILICON CONTROLLED RECTIFIER
  519. 2N2326S Microsemi - SILICON CONTROLLED RECTIFIER
  520. 2N2327 Microsemi - SILICON CONTROLLED RECTIFIER
  521. 2N2327A Microsemi - SILICON CONTROLLED RECTIFIER
  522. 2N2328 Microsemi - SILICON CONTROLLED RECTIFIER
  523. 2N2328A Microsemi - SILICON CONTROLLED RECTIFIER
  524. 2N2328AS Microsemi - SILICON CONTROLLED RECTIFIER
  525. 2N2328S Microsemi - SILICON CONTROLLED RECTIFIER
  526. 2N2329 Microsemi - SILICON CONTROLLED RECTIFIER
  527. 2N2329 SemeLAB - Bipolar Npnp Device InA Hermetically Sealed To39 Metal Package.
  528. 2N2329A Microsemi - SILICON CONTROLLED RECTIFIER
  529. 2N2329AS Microsemi - SILICON CONTROLLED RECTIFIER
  530. 2N2329S Microsemi - SILICON CONTROLLED RECTIFIER
  531. 2N2368 Semicoa - Chip Type 2C2369A Geometry 0005 Polarity NPN
  532. 2N2368 Central - Small Signal Transistors
  533. 2N2368ACSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 40V ; IC(cont) = 0.2A ; HFE(min) = 20 ; HFE(max) = 60 ; @ Vce/ic = 1V / 10mA ; FT = 400MHz ; PD = 0.36W
  534. 2N2369 Motorola - Switching Transistors
  535. 2N2369 Philips - Npn Switching Transistor
  536. 2N2369 STMicroelectronics - High-frequency Saturated Switch
  537. 2N2369 Boca - Npn Silicon Planar Epitaxial Transistors
  538. 2N2369A Semicoa - Chip Type 2C2369A Geometry 0005 Polarity NPN
  539. 2N2369A Central - Small Signal Transistors
  540. 2N2369A Boca - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  541. 2N2369A STMicroelectronics - High-speed Saturated Switch
  542. 2N2369A Microsemi - Npn Bipolar Transistor
  543. 2N2369A Microsemi - Npn Silicon Switching Transistor
  544. 2N2369A Microsemi - Npn Bipolar Transistor
  545. 2N2369A1 SemeLAB - High Speed, Medium Power, Npn Switching Transistor InA Hermetically Sealed To-18 Package For High Reliability Applications
  546. 2N2369ACSM SemeLAB - High Speed, Medium Power, Npn Switching Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  547. 2N2369ADCSM SemeLAB - DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR INA HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
  548. 2N2369AJ Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 40 ; Vebo (V) = 4.5 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  549. 2N2369AJS Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 40 ; Vebo (V) = 4.5 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  550. 2N2369AJV Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 40 ; Vebo (V) = 4.5 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  551. 2N2369AJX Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 40 ; Vebo (V) = 4.5 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  552. 2N2369AU Microsemi - NPN SILICON SWITCHING TRANSISTOR
  553. 2N2369AUA Microsemi - NPN SILICON SWITCHING TRANSISTOR
  554. 2N2369AUB Microsemi - NPN SILICON SWITCHING TRANSISTOR
  555. 2N2369AUBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 40 ; Vebo (V) = 4.5 ; Ic (A) = 0.20 ; Power (W) ta = 0.4 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  556. 2N2369AUBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 40 ; Vebo (V) = 4.5 ; Ic (A) = 0.20 ; Power (W) ta = 0.4 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  557. 2N2369CSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 40V ; IC(cont) = 0.2A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 1V / 10mA ; FT = 400MHz ; PD = 0.36W
  558. 2N2377 Central - Small Signal Transistors
  559. 2N2378 Central - Small Signal Transistors
  560. 2N2380A Central - SMALL SIGNAL TRANSISTORS
  561. 2N2386 Solitron - Low Power Field Effect Transistor, Case Style = TO-5, Geometry = FP5.3...
  562. 2N2386A Solitron - Low Power Field Effect Transistor, Case Style = TO-5, Geometry = FP5.3...
  563. 2N2405 Central - SMALL SIGNAL TRANSISTORS
  564. 2N2410 Central - SMALL SIGNAL TRANSISTORS
  565. 2N2411 Central - Small Signal Transistors
  566. 2N2411 Central - Pnp Silicon Transistor
  567. 2N2411X SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 20V ; IC(cont) = 0.1A ; HFE(min) = 10 ; HFE(max) = - ; @ Vce/ic = 0.5V / 0.05mA ; FT = 140MHz ; PD = 0.3W
  568. 2N2412 Central - Small Signal Transistors
  569. 2N2412 Central - PNP SILICON TRANSISTOR
  570. 2N2412BX SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 20V ; IC(cont) = 0.1A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 0.5V / 0.05mA ; FT = 140MHz ; PD = 0.3W
  571. 2N2412X SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 20V ; IC(cont) = 0.1A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 0.5V / 0.05mA ; FT = 140MHz ; PD = 0.3W
  572. 2N2417 Central - Mu4893
  573. 2N2417A Central - MU4893
  574. 2N2417B Central - MU4893
  575. 2N2418 Central - MU4893
  576. 2N2418A Central - MU4893
  577. 2N2418B Central - MU4893
  578. 2N2419 Central - MU4893
  579. 2N2419A Central - MU4893
  580. 2N2419B Central - MU4893
  581. 2N241A Неопределенные - alloy-junction germanium transistors
  582. 2N2420 Central - MU4893
  583. 2N2420A Central - MU4893
  584. 2N2420B Central - MU4893
  585. 2N2421 Central - MU4893
  586. 2N2421A Central - MU4893
  587. 2N2421B Central - MU4893
  588. 2N2422 Central - MU4893
  589. 2N2422A Central - MU4893
  590. 2N2422B Central - MU4893
  591. 2N2432 SemeLAB - Bipolar Npn Device InA Hermetically Sealed To18 Metal Package
  592. 2N2432A Microsemi - NPN Transistor, Package : TO-18
  593. 2N2432A SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 45V ; IC(cont) = 0.1A ; HFE(min) = 50 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = 20MHz ; PD = 0.3W
  594. 2N2453 Central - Dual Transistors
  595. 2N2453A Central - Dual Transistors
  596. 2N2453DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.05A ; HFE(min) = 150 ; HFE(max) = 600 ; @ Vce/ic = 5V / 10mA ; FT = 60MHz ; PD = 1.2W
  597. 2N2475 Central - Small Signal Transistors
  598. 2N2476 Central - SMALL SIGNAL TRANSISTORS
  599. 2N2477 Central - SMALL SIGNAL TRANSISTORS
  600. 2N2479 Central - SMALL SIGNAL TRANSISTORS
  601. 2N2480 Central - Dual Transistors
  602. 2N2480A Central - Dual Transistors
  603. 2N2481 Central - SMALL SIGNAL TRANSISTORS
  604. 2N2482 SunLED - silicon transistors UHF/VHF power transistors
  605. 2N2483 Semicoa - Chip Type 2C2484 Geometry 0307 Polarity NPN
  606. 2N2483 Central - Small Signal Transistors
  607. 2N2483 Dionics - NPN Silicon Transistor Chips
  608. 2N2484 Semicoa - Chip Type 2C2484 Geometry 0307 Polarity NPN
  609. 2N2484 Central - Small Signal Transistors
  610. 2N2484 Philips - Npn General Purpose Transistor
  611. 2N2484 Boca - Npn Silicon Planar Transistor
  612. 2N2484 Microsemi - Small Signal Bipolar Npn Silicon
  613. 2N2484 STMicroelectronics - Semiconductor Device, Transistor, Npn, Silicon, Low-power Types 2n2484, 2n2484ua, 2n2484ub, Jan, Jantx, Jantxv, Jans, Janhc, and Jankc
  614. 2N2484 Dionics - NPN Silicon Transistor Chips
  615. 2N2484 Semicoa - Type 2n2484 Geometry 0220 / 0307 Polarity Npn
  616. 2N2484ACSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 150 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = - ; PD = 0.36W
  617. 2N2484ADCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 150 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = - ; PD = 0.75W
  618. 2N2484CSM SemeLAB - High Speed, Medium Power, Npn General Purpose Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  619. 2N2484DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 150 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = - ; PD = 0.75W
  620. 2N2484J Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 800 ; VCE(sat) (V) = 0.30
  621. 2N2484JS Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 800 ; VCE(sat) (V) = 0.30
  622. 2N2484JV Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 800 ; VCE(sat) (V) = 0.30
  623. 2N2484JX Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 800 ; VCE(sat) (V) = 0.30
  624. 2N2484RCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 150 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = - ; PD = 0.36W
  625. 2N2484UA STMicroelectronics - SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
  626. 2N2484UB STMicroelectronics - SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
  627. 2N2484UBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 800 ; VCE(sat) (V) = 0.30
  628. 2N2484UBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 800 ; VCE(sat) (V) = 0.30
  629. 2N2484UBJX Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 800 ; VCE(sat) (V) = 0.30
  630. 2N2497 Solitron - Low Power Field Effect Transistor, Case Style = TO-5, Geometry = FP5.3...
  631. 2N2498 Solitron - Low Power Field Effect Transistor, Case Style = TO-5, Geometry = FP5.3...
  632. 2N2499 Solitron - Low Power Field Effect Transistor, Case Style = TO-5, Geometry = FP5.3...
  633. 2N2500 Solitron - Low Power Field Effect Transistor, Case Style = TO52, Geometry = FP5.3...
  634. 2N2501 Central - Small Signal Transistors
  635. 2N2509 Central - Small Signal Transistors
  636. 2N2510 Central - Small Signal Transistors
  637. 2N2511 Central - Small Signal Transistors
  638. 2N2539 Central - Small Signal Transistors
  639. 2N2540 Central - Small Signal Transistors
  640. 2N2574 Motorola - Silicon Controlled Rectifiers
  641. 2N2575 Motorola - SILICON CONTROLLED RECTIFIERS
  642. 2N2576 Motorola - SILICON CONTROLLED RECTIFIERS
  643. 2N2578 Motorola - SILICON CONTROLLED RECTIFIERS
  644. 2N2586 Central - Small Signal Transistors
  645. 2N2594 Central - SMALL SIGNAL TRANSISTORS
  646. 2N2604 Semicoa - Chip Type 2C2605 Geometry 0220 Polarity NPN
  647. 2N2604 Central - Small Signal Transistors
  648. 2N2605 Semicoa - Chip Type 2C2605 Geometry 0220 Polarity NPN
  649. 2N2605 Central - Small Signal Transistors
  650. 2N2605CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = - ; HFE(min) = 150 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = 100MHz ; PD = 0.4W
  651. 2N2605J Semicoa - Package = TO-46 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 70 ; Vebo (V) = 6 ; Ic (A) = 0.03 ; (Power W) ta = 0.4 ; Rtja (C/W) = 437 ; Tstg/top (C) = -65 to +200 ; Hfe = 400 ; VCE(sat) (V) = 0.30
  652. 2N2605JV Semicoa - Package = TO-46 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 70 ; Vebo (V) = 6 ; Ic (A) = 0.03 ; (Power W) ta = 0.4 ; Rtja (C/W) = 437 ; Tstg/top (C) = -65 to +200 ; Hfe = 400 ; VCE(sat) (V) = 0.30
  653. 2N2605JX Semicoa - Package = TO-46 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 70 ; Vebo (V) = 6 ; Ic (A) = 0.03 ; (Power W) ta = 0.4 ; Rtja (C/W) = 437 ; Tstg/top (C) = -65 to +200 ; Hfe = 400 ; VCE(sat) (V) = 0.30
  654. 2N2606 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP22....
  655. 2N2607 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP5.3...
  656. 2N2608 Microsemi - P-channel J-fet
  657. 2N2608 Central - Junction Fets Low Frequency/ Low Noise
  658. 2N2608 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP5.3...
  659. 2N2609 Central - Junction FETs Low Frequency/ Low Noise
  660. 2N2609 Microsemi - P-channel J-fet
  661. 2N2609 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP5.3...
  662. 2N2619 Central - SCRs
  663. 2N2632 Solitron -
  664. 2N2633 Solitron -
  665. 2N2634 Solitron -
  666. 2N2639 Central - Dual Transistors
  667. 2N2639 Motorola - Dual Amplifier Transistors Npn Silicon
  668. 2N2639DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 65 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = 32MHz ; PD = 0.3W
  669. 2N2640 Central - Dual Transistors
  670. 2N2640 Motorola - DUAL AMPLIFIER TRANSISTORS NPN SILICON
  671. 2N2640DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 65 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = 32MHz ; PD = 0.3W
  672. 2N2641 Central - Dual Transistors
  673. 2N2641 Motorola - DUAL AMPLIFIER TRANSISTORS NPN SILICON
  674. 2N2641DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 65 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = 32MHz ; PD = 0.3W
  675. 2N2642 Central - Dual Transistors
  676. 2N2642 Motorola - DUAL AMPLIFIER TRANSISTORS NPN SILICON
  677. 2N2643 Central - Dual Transistors
  678. 2N2643 Motorola - DUAL AMPLIFIER TRANSISTORS NPN SILICON
  679. 2N2643DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 130 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = 32MHz ; PD = 0.3W
  680. 2N2644 Central - Dual Transistors
  681. 2N2644 Motorola - DUAL AMPLIFIER TRANSISTORS NPN SILICON
  682. 2N2644DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 130 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = 32MHz ; PD = 0.3W
  683. 2N2645 Central - Small Signal Transistors
  684. 2N2646 Central - MU4893
  685. 2N2646 Boca - Silicon Pn Unijuction Transistor
  686. 2N2646 Philips - Silicon Unijunction Transistor
  687. 2N2646 Неопределенные - Silicon Unijonction Transistors
  688. 2N2646 ASI - Silicon Pn Univunction Transistor
  689. 2N2647 Central - MU4893
  690. 2N2647 Boca - Silicon PN Unijuction Transistor
  691. 2N2647 Неопределенные - SILICON UNIJONCTION TRANSISTORS
  692. 2N2651 Central - Small Signal Transistors
  693. 2N2652 Central - Dual Transistors
  694. 2N2652A Central - Dual Transistors
  695. 2N2655 Solitron -
  696. 2N2657 Central - SMALL SIGNAL TRANSISTORS
  697. 2N2657 Solitron -
  698. 2N2658 Central - SMALL SIGNAL TRANSISTORS
  699. 2N2658 Solitron -
  700. 2N2696 SemeLAB - Bipolar Pnp Device InA Hermetically Sealed To18 Metal
  701. 2N2696CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 25V ; IC(cont) = 0.5A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 1V / 50mA ; FT = 100MHz ; PD = 0.36W
  702. 2N2697 Solitron -
  703. 2N2698 Honeywell - Silicon Transistor
  704. 2N2698 Solitron -
  705. 2N2710 Central - Small Signal Transistors
  706. 2N2710 Fairchild - Npn Small Signal High Speed Low Power Saturating Switch Transistor
  707. 2N2712 Central - Small Signal Transistors
  708. 2N2714 Central - Small Signal Transistors
  709. 2N2722 Central - Dual Transistors
  710. 2N2726 Central - SMALL SIGNAL TRANSISTORS
  711. 2N2727 Central - SMALL SIGNAL TRANSISTORS
  712. 2N2800 Central - SMALL SIGNAL TRANSISTORS
  713. 2N2801 Central - SMALL SIGNAL TRANSISTORS
  714. 2N2811 Solitron -
  715. 2N2812 Solitron -
  716. 2N2813 Solitron -
  717. 2N2814 Solitron -
  718. 2N2823 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP22....
  719. 2N2837 Central - Small Signal Transistors
  720. 2N2838 Central - Small Signal Transistors
  721. 2N2840 Central - MU4893
  722. 2N2841 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP22....
  723. 2N2842 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP5.3...
  724. 2N2843 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP5.3...
  725. 2N2844 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP5.3...
  726. 2N2845 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO18 Metal Package
  727. 2N2845 Central - Small Signal Transistors
  728. 2N2847 Central - Small Signal Transistors
  729. 2N2848 SemeLAB - Bipolar Npn Device
  730. 2N2849 Solitron -
  731. 2N2850 Solitron -
  732. 2N2851 Solitron -
  733. 2N2852 Solitron -
  734. 2N2853 Solitron -
  735. 2N2854 Central - Small Signal Transistors
  736. 2N2854 Solitron -
  737. 2N2855 Central - Small Signal Transistors
  738. 2N2855 Solitron -
  739. 2N2856 Solitron -
  740. 2N2857 Semicoa - Chip Type 2C2857 Geometry 0011 Polarity NPN
  741. 2N2857 SemeLAB - Npn Transistor
  742. 2N2857 Microsemi - Rf & Microwave Discrete Low Power Transistors
  743. 2N2857 Central - Small Signal Npn Transistors / Dual Transistors
  744. 2N2857 M-pulse - Silicon Bipolar Low Noise Microwave Transistors
  745. 2N2857 Semicoa - Type 2n2857 Geometry 0011 Polarity Npn
  746. 2N2857CSM SemeLAB - High Frequency Npn Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  747. 2N2857DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 30V ; IC(cont) = 0.04A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 1V / 30mA ; FT = 1900MHz ; PD = 0.2W
  748. 2N2857J Semicoa - Package = TO-72 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 30 ; Vebo (V) = 3.0 ; Ic (A) = 0.04 ; Power (W) ta = 0.2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.40
  749. 2N2857JS Semicoa - Package = TO-72 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 30 ; Vebo (V) = 3.0 ; Ic (A) = 0.04 ; Power (W) ta = 0.2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.40
  750. 2N2857JV Semicoa - Package = TO-72 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 30 ; Vebo (V) = 3.0 ; Ic (A) = 0.04 ; Power (W) ta = 0.2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.40
  751. 2N2857JX Semicoa - Package = TO-72 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 30 ; Vebo (V) = 3.0 ; Ic (A) = 0.04 ; Power (W) ta = 0.2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.40
  752. 2N2857UB Semicoa - Chip Type 2C2857 Geometry 0011 Polarity NPN
  753. 2N2857UB Semicoa - Type 2n2857ub Geometry 0011 Polarity Npn
  754. 2N2857UBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 30 ; Vebo (V) = 3.0 ; Ic (A) = 0.04 ; Power (W) ta = 0.2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.40
  755. 2N2857UBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 30 ; Vebo (V) = 3.0 ; Ic (A) = 0.04 ; Power (W) ta = 0.2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.40
  756. 2N2857UBJX Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 30 ; Vebo (V) = 3.0 ; Ic (A) = 0.04 ; Power (W) ta = 0.2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.40
  757. 2N2861 Central - Small Signal Transistors
  758. 2N2862 Central - Small Signal Transistors
  759. 2N2865 Central - Small Signal NPN Transistors / Dual Transistors
  760. 2N2877 General Semiconductor - Npn Silicon High-power Transistors
  761. 2N2877 Solitron -
  762. 2N2878 General Semiconductor - NPN SILICON HIGH-POWER TRANSISTORS
  763. 2N2878 Solitron -
  764. 2N2879 General Semiconductor - NPN SILICON HIGH-POWER TRANSISTORS
  765. 2N2879 Solitron -
  766. 2N2880 General Semiconductor - NPN SILICON HIGH-POWER TRANSISTORS
  767. 2N2880 Microsemi - 5 Amp, 80v, Planar, Npn Power Transistors Jan,jtx,jantxv,jans
  768. 2N2880 Solitron -
  769. 2N2880 Microsemi - Pnp Power Silicon Transistor
  770. 2N2890 Central - Small Signal Transistors
  771. 2N2890 Solitron -
  772. 2N2891 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
  773. 2N2891 Central - Small Signal Transistors
  774. 2N2891 Solitron -
  775. 2N2891LCC4 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 2A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 2V / 1A ; FT = 30MHz ; PD = 0.8W
  776. 2N2891LL SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 80V ; IC(cont) = 2A ; HFE(min) = 30 ; HFE(max) = 90 ; @ Vce/ic = 2V / 1A ; FT = 30MHz ; PD = 0.8W
  777. 2N2891-SM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 2A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 2V / 1A ; FT = 30MHz ; PD = 0.8W
  778. 2N2891SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 2A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 2V / 0mA ; FT = 30MHz ; PD = 5W
  779. 2N2891SMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 80V ; IC(cont) = 2A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 2V / 0mA ; FT = 30MHz ; PD = 5W
  780. 2N2892 Solitron -
  781. 2N2893 Solitron -
  782. 2N2894 Central - Small Signal Transistors
  783. 2N2894 Motorola - Case 22-03, Style 1 To-18(to-206aa)
  784. 2N2894 STMicroelectronics - High-speed Saturated Switches
  785. 2N2894 SemeLAB - Pnp Silicon Transistor
  786. 2N2894A SemeLAB - Bipolar PNP Device inA Hermetically sealed TO18 Metal Package
  787. 2N2894A Central - Small Signal Transistors
  788. 2N2894ACSM SemeLAB - High Speed, Medium Power, Pnp General Purpose Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  789. 2N2894CSM SemeLAB - High Speed, Medium Power, Pnp General Purpose Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  790. 2N2894DCSM SemeLAB - Dual High Speed, Medium Power, Pnp General Purpose Transistor InA Hermetically Sealed Ceramic Surface Mount Package
  791. 2N2894L SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 12V ; IC(cont) = 0.2A ; HFE(min) = 40 ; HFE(max) = 150 ; @ Vce/ic = 0.5V / 30mA ; FT = 400MHz ; PD = 0.36W
  792. 2N2895 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO18 Metal Package
  793. 2N2895 Central - Small Signal Transistors
  794. 2N2896 Central - Small Signal Transistors
  795. 2N2897 Central - Small Signal Transistors
  796. 2N2903 Central - Dual Transistors
  797. 2N2903 Central - Npn Silicon Dual Transistor
  798. 2N2903A Central - Dual Transistors
  799. 2N2903A Central - NPN SILICON DUAL TRANSISTOR
  800. 2N2904 Semicoa - Chip Type 2C2904A Geometry 0600 Polarity PNP
  801. 2N2904 SemeLAB - General Purpose Pnp Transistor
  802. 2N2904 Microsemi - Pnp Switching Silicon Transistor
  803. 2N2904 Siemens - PNP SILICON PLANAR TRANSISTORS
  804. 2N2904 Dionics - PNP Silicon High Current Transistor Chips
  805. 2N2904A Semicoa - Chip Type 2C2904A Geometry 0600 Polarity PNP
  806. 2N2904A SemeLAB - Bipolar PNP Device inA Hermetically sealed TO39 Metal Package
  807. 2N2904A Central - Small Signal Transistors
  808. 2N2904A Microsemi - PNP SWITCHING SILICON TRANSISTOR
  809. 2N2904A Boca - Npn Silicon Planar Switching Transistors
  810. 2N2904A Dionics - PNP Silicon High Current Transistor Chips
  811. 2N2904ACSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.6W
  812. 2N2904AJ Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  813. 2N2904AJV Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  814. 2N2904AJX Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  815. 2N2904AL Microsemi - PNP SWITCHING SILICON TRANSISTOR
  816. 2N2904ALJ Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  817. 2N2904ALJX Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  818. 2N2904AUB Semicoa - Chip Type 2C2904A Geometry 0600 Polarity PNP
  819. 2N2904CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  820. 2N2904DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.5W
  821. 2N2904E KEC - Epitaxial Planar Npn Transistor (general Purpose, Switching)
  822. 2N2904E KEC - Switching Transistor, Package = TES6
  823. 2N2904J Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  824. 2N2904JV Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  825. 2N2904JX Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  826. 2N2904L SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO5 (TO205AA) ; Vceo = 40V ; IC(cont) = 0.6A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.6W
  827. 2N2905 Semicoa - Chip Type 2C2907A Geometry 0600 Polarity PNP
  828. 2N2905 Microsemi - PNP SWITCHING SILICON TRANSISTOR
  829. 2N2905 Philips - Pnp Switching Transistors
  830. 2N2905 STMicroelectronics - General Purpose Amplifiers and Switches
  831. 2N2905 Siemens - Pnp Silicon Planar Transistors
  832. 2N2905 Micro Electronics - Pnp Silicon Transistors
  833. 2N2905 Dionics - PNP Silicon High Current Transistor Chips
  834. 2N2905A Semicoa - Chip Type 2C2907A Geometry 0600 Polarity PNP
  835. 2N2905A Central - Small Signal Transistors
  836. 2N2905A Microsemi - PNP SWITCHING SILICON TRANSISTOR
  837. 2N2905A Boca - NPN SILICON PLANAR SWITCHING TRANSISTORS
  838. 2N2905A Philips - PNP switching transistors
  839. 2N2905A STMicroelectronics - General Purpose Amplifiers and Switches
  840. 2N2905A SemeLAB - High Speed Medium Power Pnp Switching Transistor
  841. 2N2905A ASI - Silicon Pnp Transistor
  842. 2N2905A Dionics - PNP Silicon High Current Transistor Chips
  843. 2N2905A Semicoa - Type 2n2905a Geometry 0600 Polarity Pnp
  844. 2N2905ACSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.6W
  845. 2N2905AJ Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  846. 2N2905AJS Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  847. 2N2905AJV Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  848. 2N2905AJX Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  849. 2N2905AL Semicoa - Chip Type 2C2907A Geometry 0600 Polarity PNP
  850. 2N2905AL Microsemi - PNP SWITCHING SILICON TRANSISTOR
  851. 2N2905AL Semicoa - Type 2n2905al Geometry 0600 Polarity Pnp
  852. 2N2905ALJ Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  853. 2N2905ALJS Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  854. 2N2905ALJX Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  855. 2N2905CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.6W
  856. 2N2905J SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.6W
  857. 2N2905J Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  858. 2N2905JV Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  859. 2N2905JX Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  860. 2N2905L SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO5 (TO205AA) ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.6W
  861. 2N2906 Philips - PNP switching transistors
  862. 2N2906 Semicoa - Chip Type 2C2904A Geometry 0600 Polarity PNP
  863. 2N2906 STMicroelectronics - 1.8w Pnp General Purpose Samll Signal Transistors
  864. 2N2906 Siemens - Pnp Silicon Planar Transistors
  865. 2N2906 Micro Electronics - Pnp Silicon General Purpose Amplifiers and Switches
  866. 2N2906 Dionics - PNP Silicon High Current Transistor Chips
  867. 2N2906A Philips - PNP switching transistors
  868. 2N2906A Semicoa - Chip Type 2C2904A Geometry 0600 Polarity PNP
  869. 2N2906A Siemens - PNP SILICON PLANAR TRANSISTORS
  870. 2N2906A Central - Small Signal Transistors
  871. 2N2906A Micro Electronics - PNP SILICON GENERAL PURPOSE AMPLIFIERS and SWITCHES
  872. 2N2906A Boca - Pnp Silicon Planar Switching Transistors
  873. 2N2906A Microsemi - Pnp Small Signal Silicon Transistor
  874. 2N2906A Dionics - PNP Silicon High Current Transistor Chips
  875. 2N2906ACECC SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  876. 2N2906ACSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  877. 2N2906ADCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.5W
  878. 2N2906AJ Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  879. 2N2906AJS Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  880. 2N2906AJV Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  881. 2N2906AJX Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  882. 2N2906AL Microsemi - PNP SMALL SIGNAL SILICON TRANSISTOR
  883. 2N2906AUA Microsemi - PNP SMALL SIGNAL SILICON TRANSISTOR
  884. 2N2906AUB Microsemi - PNP SMALL SIGNAL SILICON TRANSISTOR
  885. 2N2906AUBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  886. 2N2906AUBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  887. 2N2906AX SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 40 ; HFE(max) = 175 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  888. 2N2906CECC SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 40V ; IC(cont) = 0.6A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  889. 2N2906CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  890. 2N2906DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.5W
  891. 2N2906E KEC - Epitaxial Planar Pnp Transistor (general Purpose, Switching)
  892. 2N2906E KEC - Switching Transistor, Package = TES6
  893. 2N2907 Philips - PNP switching transistors
  894. 2N2907 Semicoa - Chip Type 2C2907A Geometry 0600 Polarity PNP
  895. 2N2907 SemeLAB - Bipolar PNP Device inA Hermetically sealed TO18 Metal Package
  896. 2N2907 STMicroelectronics - GENERAL PURPOSE AMPLIFIERS and SWITCHES
  897. 2N2907 Siemens - PNP SILICON PLANAR TRANSISTORS
  898. 2N2907 Micro Electronics - Pnp Silicon Planar Epitaxial Transistors
  899. 2N2907 ASI - Silicon Pnp Transistor
  900. 2N2907 Dionics - PNP Silicon High Current Transistor Chips
  901. 2N2907 STMicroelectronics - 1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS
  902. 2N29071 Microsemi - Switching Transistor Pnp Silicon
  903. 2N29071AB Microsemi - SWITCHING TRANSISTOR PNP SILICON
  904. 2N29071AB-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  905. 2N29071ABC Microsemi - SWITCHING TRANSISTOR PNP SILICON
  906. 2N29071ABC-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  907. 2N29071ABS Microsemi - SWITCHING TRANSISTOR PNP SILICON
  908. 2N29071ABS-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  909. 2N29071AD Microsemi - SWITCHING TRANSISTOR PNP SILICON
  910. 2N29071AD-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  911. 2N29071ADC Microsemi - SWITCHING TRANSISTOR PNP SILICON
  912. 2N29071ADC-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  913. 2N29071ADS Microsemi - SWITCHING TRANSISTOR PNP SILICON
  914. 2N29071ADS-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  915. 2N29071AU Microsemi - SWITCHING TRANSISTOR PNP SILICON
  916. 2N29071AU-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  917. 2N29071AUC Microsemi - SWITCHING TRANSISTOR PNP SILICON
  918. 2N29071AUC-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  919. 2N29071AUS Microsemi - SWITCHING TRANSISTOR PNP SILICON
  920. 2N29071AUS-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  921. 2N29071AV Microsemi - SWITCHING TRANSISTOR PNP SILICON
  922. 2N29071AV-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  923. 2N29071AVC Microsemi - SWITCHING TRANSISTOR PNP SILICON
  924. 2N29071AVC-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  925. 2N29071AVS Microsemi - SWITCHING TRANSISTOR PNP SILICON
  926. 2N29071AVS-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  927. 2N29071AW Microsemi - SWITCHING TRANSISTOR PNP SILICON
  928. 2N29071AW-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  929. 2N29071AWC Microsemi - SWITCHING TRANSISTOR PNP SILICON
  930. 2N29071AWC-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  931. 2N29071AWS Microsemi - SWITCHING TRANSISTOR PNP SILICON
  932. 2N29071AWS-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  933. 2N29071AX Microsemi - SWITCHING TRANSISTOR PNP SILICON
  934. 2N29071AX-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  935. 2N29071AXC Microsemi - SWITCHING TRANSISTOR PNP SILICON
  936. 2N29071AXC-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  937. 2N29071AXS Microsemi - SWITCHING TRANSISTOR PNP SILICON
  938. 2N29071AXS-1 Microsemi - SWITCHING TRANSISTOR PNP SILICON
  939. 2N2907A Philips - PNP switching transistors
  940. 2N2907A Semicoa - Chip Type 2C2907A Geometry 0600 Polarity PNP
  941. 2N2907A SemeLAB - HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR
  942. 2N2907A Central - Small Signal Transistors
  943. 2N2907A STMicroelectronics - GENERAL PURPOSE AMPLIFIERS and SWITCHES
  944. 2N2907A Boca - PNP SILICON PLANAR SWITCHING TRANSISTORS
  945. 2N2907A Microsemi - PNP SMALL SIGNAL SILICON TRANSISTOR
  946. 2N2907A Micro Electronics - PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  947. 2N2907A ASI - SILICON PNP TRANSISTOR
  948. 2N2907A Dionics - PNP Silicon High Current Transistor Chips
  949. 2N2907A Semicoa - Type 2n2907a Geometry 0600 Polarity Pnp
  950. 2N2907A Microsemi - Pnp Bipolar Transistor
  951. 2N2907A-220M-ISO SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  952. 2N2907ACECC SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  953. 2N2907ACSM SemeLAB - High Speed, Medium Power, Pnp Switching Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  954. 2N2907ACSM4 SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  955. 2N2907ACSMCECC SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  956. 2N2907ADCSM SemeLAB - Dual High Speed, Medium Power Pnp Switching Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  957. 2N2907ADIE Microsemi - SWITCHING TRANSISTOR PNP SILICON
  958. 2N2907AJ Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  959. 2N2907AJS Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  960. 2N2907AJV Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  961. 2N2907AJX Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  962. 2N2907AL Microsemi - PNP SMALL SIGNAL SILICON TRANSISTOR
  963. 2N2907AMX100 SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  964. 2N2907AQCSM SemeLAB - Quad Transistor ; Package = LCC6 ; Polarity = PNP ; Bipolar: = ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10/0.15 ; FT = 200MHz
  965. 2N2907AQ-LCC20 SemeLAB - Surface Mount Quad Pnp Transistor
  966. 2N2907AUA Microsemi - PNP SMALL SIGNAL SILICON TRANSISTOR
  967. 2N2907AUB Semicoa - Chip Type 2C2907A Geometry 0600 Polarity PNP
  968. 2N2907AUB Microsemi - PNP SMALL SIGNAL SILICON TRANSISTOR
  969. 2N2907AUB Semicoa - Type 2n2907aub Geometry 0600 Polarity Pnp
  970. 2N2907AUBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  971. 2N2907AUBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  972. 2N2907CECC SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 40V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  973. 2N2907CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 200MHz ; PD = 0.4W
  974. 2N2913 Central - Dual Transistors
  975. 2N2913 SemeLAB - Dual Npn Planar Transistors In To77 Package
  976. 2N2913CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO77 (MO002AF) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 60 ; HFE(max) = 240 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  977. 2N2913DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 60 ; HFE(max) = 240 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  978. 2N2914 Central - Dual Transistors
  979. 2N2914 SemeLAB - Dual Npn Planar Transistors In To77 Package
  980. 2N2914CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO77 (MO002AF) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 150 ; HFE(max) = 600 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  981. 2N2914DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 150 ; HFE(max) = 600 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  982. 2N2915 Central - Dual Transistors
  983. 2N2915 SemeLAB - DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE
  984. 2N2915A Central - Dual Transistors
  985. 2N2915CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO77 (MO002AF) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 60 ; HFE(max) = 240 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  986. 2N2915DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 60 ; HFE(max) = 240 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  987. 2N2916 Central - Dual Transistors
  988. 2N2916 SemeLAB - DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE
  989. 2N2916A Central - Dual Transistors
  990. 2N2916CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO77 (MO002AF) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 150 ; HFE(max) = 600 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  991. 2N2916DCSM SemeLAB - Dual Npn Planar Transistors InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  992. 2N2917 Central - Dual Transistors
  993. 2N2917 SemeLAB - DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE
  994. 2N2917CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO77 (MO002AF) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 60 ; HFE(max) = 240 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  995. 2N2917DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 60 ; HFE(max) = 240 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  996. 2N2918 Central - Dual Transistors
  997. 2N2918 SemeLAB - DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE
  998. 2N2918CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO77 (MO002AF) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 150 ; HFE(max) = 600 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  999. 2N2918DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 150 ; HFE(max) = 600 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  1000. 2N2919 Central - Dual Transistors
  1001. 2N2919 SemeLAB - Dual Npn Planar Transistors In To77 Package
  1002. 2N2919A Central - Dual Transistors
  1003. 2N2919CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO77 (MO002AF) ; Vceo = 60V ; IC(cont) = 0.03A ; HFE(min) = 60 ; HFE(max) = 240 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  1004. 2N2919DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.03A ; HFE(min) = 60 ; HFE(max) = 240 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  1005. 2N2919J Semicoa - Package = TO-78 ; Level = ; Vceo (V) = 60 ; Vcbo (V) = 70 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 325 ; VCE(sat) (V) = 0.30
  1006. 2N2919JS Semicoa - Package = TO-78 ; Level = ; Vceo (V) = 60 ; Vcbo (V) = 70 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 325 ; VCE(sat) (V) = 0.30
  1007. 2N2919JV Semicoa - Package = TO-78 ; Level = ; Vceo (V) = 60 ; Vcbo (V) = 70 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 325 ; VCE(sat) (V) = 0.30
  1008. 2N2919JX Semicoa - Package = TO-78 ; Level = ; Vceo (V) = 60 ; Vcbo (V) = 70 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 325 ; VCE(sat) (V) = 0.30
  1009. 2N292 Неопределенные - alloy-junction germanium transistors
  1010. 2N2920 Semicoa - Chip Type 2C2484 Geometry 0307 Polarity NPN
  1011. 2N2920 Central - Dual Transistors
  1012. 2N2920 SemeLAB - Dual Npn Planar Transistors In To77 Package
  1013. 2N2920A Central - Dual Transistors
  1014. 2N2920ADCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.03A ; HFE(min) = 150 ; HFE(max) = 600 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  1015. 2N2920CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO77 (MO002AF) ; Vceo = 60V ; IC(cont) = 0.03A ; HFE(min) = 150 ; HFE(max) = 600 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  1016. 2N2920DCSM SemeLAB - Dual Npn Transistors InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  1017. 2N2920J Semicoa - Package = TO-78 ; Level = ; Vceo (V) = 60 ; Vcbo (V) = 70 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 800 ; VCE(sat) (V) = 0.30
  1018. 2N2920JS Semicoa - Package = TO-78 ; Level = ; Vceo (V) = 60 ; Vcbo (V) = 70 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 800 ; VCE(sat) (V) = 0.30
  1019. 2N2920JV Semicoa - Package = TO-78 ; Level = ; Vceo (V) = 60 ; Vcbo (V) = 70 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 800 ; VCE(sat) (V) = 0.30
  1020. 2N2920JX Semicoa - Package = TO-78 ; Level = ; Vceo (V) = 60 ; Vcbo (V) = 70 ; Vebo (V) = 6.0 ; Ic (A) = 0.05 ; Power (W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 800 ; VCE(sat) (V) = 0.30
  1021. 2N2923 Central - Small Signal Transistors
  1022. 2N2924 Central - Small Signal Transistors
  1023. 2N2925 Central - Small Signal Transistors
  1024. 2N2925 Micro Electronics - PNP SILICON TRANSITOR
  1025. 2N2926 Central - Small Signal Transistors
  1026. 2N2926 General Semiconductor - Silicon Transistors
  1027. 2N2927 Central - Small Signal Transistors
  1028. 2N293 Неопределенные - alloy-junction germanium transistors
  1029. 2N2930 Microsemi - SILICON CONTROLLED RECTIFIERS
  1030. 2N2944A Microsemi - Pnp Silicon Small Signal Transistor
  1031. 2N2945 Motorola - Uhf/vhf Transistor Pmp Silicon
  1032. 2N2945A Microsemi - PNP SILICON SMALL SIGNAL TRANSISTOR
  1033. 2N2946 Motorola - UHF/VHF TRANSISTOR PMP SILICON
  1034. 2N2946A Microsemi - PNP SILICON SMALL SIGNAL TRANSISTOR
  1035. 2N2951 Central - Small Signal Transistors
  1036. 2N2952 Central - Small Signal Transistors
  1037. 2N2955 UTC - Silicon Pnp Transistor
  1038. 2N2958 Central - Small Signal Transistors
  1039. 2N2959 Central - Small Signal Transistors
  1040. 2N2959 Неопределенные - Liaision Statement To Sc 22 On 10646-1/pdam 9, Identifiers For Characters
  1041. 2N2960 Central - Small Signal Transistors
  1042. 2N2961 Central - Small Signal Transistors
  1043. 2N2979DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.03A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic =V / 0mA ; FT = 60MHz ; PD = 0.25W
  1044. 2N2983 Solitron -
  1045. 2N2984 Solitron -
  1046. 2N2985 Solitron -
  1047. 2N2986 Solitron -
  1048. 2N2987 Solitron -
  1049. 2N2988 Solitron -
  1050. 2N2989 Solitron -
  1051. 2N2990 Solitron -
  1052. 2N2991 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 80V ; IC(cont) = 1A ; HFE(min) = 25 ; HFE(max) = 75 ; @ Vce/ic = 5V / 200mA ; FT = 30MHz ; PD = 2W
  1053. 2N2991 Solitron - Planar Power Transistors 1 Amp NPN, Vceo (V) = 80, Hfe Min/max = 25/75...
  1054. 2N2992 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 100V ; IC(cont) = 1A ; HFE(min) = 25 ; HFE(max) = 75 ; @ Vce/ic = 5V / 200mA ; FT = 30MHz ; PD = 2W
  1055. 2N2992 Solitron - Planar Power Transistors 1 Amp NPN, Vceo (V) = 100, Hfe Min/max = 25/7...
  1056. 2N2993 SemeLAB - Bipolar Npn Device InA Hermetically Sealed To5 Metal Package
  1057. 2N2993 Solitron -
  1058. 2N2994 Solitron - Planar Power Transistors 1 Amp NPN, Vceo (V) = 100, Hfe Min/max = 60/1...
  1059. 2N3001 Boca - Scrs (silicon Controlled Rectifiers)
  1060. 2N3001 Central - 0.8 To 110 Amperes Rms 15 To 1200 Volts
  1061. 2N3002 Boca - SCRs (Silicon Controlled Rectifiers)
  1062. 2N3002 Central - 0.8 to 110 Amperes RMS 15 to 1200 Volts
  1063. 2N3003 Boca - SCRs (Silicon Controlled Rectifiers)
  1064. 2N3003 Central - 0.8 to 110 Amperes RMS 15 to 1200 Volts
  1065. 2N3004 Boca - SCRs (Silicon Controlled Rectifiers)
  1066. 2N3004 Central - 0.8 to 110 Amperes RMS 15 to 1200 Volts
  1067. 2N3005 Boca - SCRs (Silicon Controlled Rectifiers)
  1068. 2N3005 Central - 0.8 to 110 Amperes RMS 15 to 1200 Volts
  1069. 2N3006 Boca - SCRs (Silicon Controlled Rectifiers)
  1070. 2N3006 Central - 0.8 to 110 Amperes RMS 15 to 1200 Volts
  1071. 2N3007 Boca - SCRs (Silicon Controlled Rectifiers)
  1072. 2N3007 Central - 0.8 to 110 Amperes RMS 15 to 1200 Volts
  1073. 2N3008 Boca - SCRs (Silicon Controlled Rectifiers)
  1074. 2N3008 Central - 0.8 to 110 Amperes RMS 15 to 1200 Volts
  1075. 2N3009 Central - Small Signal Transistors
  1076. 2N3009 Central - Npn Silicon High Speed Switching Transistors
  1077. 2N3011 SemeLAB - cd Bipolar NPN Device inA Hermetically sealed TO18 Metal Package
  1078. 2N3011 Central - Small Signal Transistors
  1079. 2N3012 Central - Small Signal Transistors
  1080. 2N3012CSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 12V ; IC(cont) = 0.2A ; HFE(min) = 30 ; HFE(max) = 120 ; @ Vce/ic = 0.5V / 30mA ; FT = 400MHz ; PD = 0.36W
  1081. 2N3013 Central - Small Signal Transistors
  1082. 2N3013 Central - NPN SILICON HIGH SPEED SWITCHING TRANSISTORS
  1083. 2N3014 Central - Small Signal Transistors
  1084. 2N3014 Central - NPN SILICON HIGH SPEED SWITCHING TRANSISTORS
  1085. 2N3015 Central - Small Signal Transistors
  1086. 2N3019 Semicoa - Chip Type 2C3019 Geometry 4500 Polarity PNP
  1087. 2N3019 Central - Small Signal Transistors
  1088. 2N3019 Philips - Npn Medium Power Transistor
  1089. 2N3019 STMicroelectronics - High Current, High Frequency Amplifiers
  1090. 2N3019 SemeLAB - Npn Silicon Transistor
  1091. 2N3019 Siemens - Npn Silicon Planar Transistor
  1092. 2N3019 Boca - General Transistor Npn Silicon
  1093. 2N3019 Micro Electronics - Npn Silicon Af Medium Power Amplifiers & Switches
  1094. 2N3019 CDIL - Npn Silicon Planar Epitaxial Transistors
  1095. 2N3019 Microsemi - Low Power Npn Silicon Transistor
  1096. 2N3019 Semicoa - Type 2n3019 Geometry 4500 Polarity Npn
  1097. 2N3019CSM SemeLAB - High Frequency, Npn Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  1098. 2N3019DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 80V ; IC(cont) = 1A ; HFE(min) = 80 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = 100MHz ; PD = 0.5W
  1099. 2N3019J Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1100. 2N3019JS Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1101. 2N3019JV Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1102. 2N3019JX Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1103. 2N3019RB SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 1A ; HFE(min) = 80 ; HFE(max) = - ; @ Vce/ic = 5V / 1mA ; FT = 100MHz ; PD = 0.8W
  1104. 2N3019S Semicoa - Chip Type 2C3019 Geometry 4500 Polarity PNP
  1105. 2N3019S Microsemi - LOW POWER NPN SILICON TRANSISTOR
  1106. 2N3019S Semicoa - Type 2n3019s Geometry 4500 Polarity Npn
  1107. 2N3019SJ Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1108. 2N3019SJS Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1109. 2N3019SJV Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1110. 2N3019SJX Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1111. 2N3019UB Semicoa - Chip Type 2C3019 Geometry 4500 Polarity PNP
  1112. 2N3020 Central - Small Signal Transistors
  1113. 2N3020 Boca - GENERAL TRANSISTOR NPN SILICON
  1114. 2N3020 Micro Electronics - NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
  1115. 2N3020 CDIL - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  1116. 2N3021 Solitron - Planar Power Transistors 3 Amp PNP, Vceo (V) = 30, Hfe Min/max = 20/60...
  1117. 2N3022 Solitron - Planar Power Transistors 3 Amp PNP, Vceo (V) = 45, Hfe Min/max = 20/60...
  1118. 2N3023 Solitron - Planar Power Transistors 3 Amp PNP, Vceo (V) = 60, Hfe Min/max = 20/60...
  1119. 2N3024 Solitron - Planar Power Transistors 3 Amp PNP, Vceo (V) = 30, Hfe Min/max = 50/18...
  1120. 2N3025 Solitron - Planar Power Transistors 3 Amp PNP, Vceo (V) = 45, Hfe Min/max = 50/18...
  1121. 2N3026 Solitron - Planar Power Transistors 3 Amp PNP, Vceo (V) = 60, Hfe Min/max = 50/18...
  1122. 2N3027 Microsemi - Scrs 0.5 Amp, Planear
  1123. 2N3027-2N2032 Microsemi - SCRS 0.5 Amp, Planar
  1124. 2N3028 Microsemi - SCRs 0.5 Amp, Planear
  1125. 2N3029 Microsemi - SCRs 0.5 Amp, Planear
  1126. 2N3030 Microsemi - SCRs 0.5 Amp, Planear
  1127. 2N3031 Microsemi - SCRs 0.5 Amp, Planear
  1128. 2N3032 Microsemi - SCRs 0.5 Amp, Planear
  1129. 2N3036 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 1.2A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 10V / 10mA ; FT = 50MHz ; PD = 0.8W
  1130. 2N3036 Central -
  1131. 2N3036L SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 1.2A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 10V / 10mA ; FT = 50MHz ; PD = 0.8W
  1132. 2N3043 Motorola - Dual Amplifier Transistor
  1133. 2N3044 Motorola - DUAL AMPLIFIER TRANSISTOR
  1134. 2N3045 Motorola - DUAL AMPLIFIER TRANSISTOR
  1135. 2N3048 Motorola - DUAL AMPLIFIER TRANSISTOR
  1136. 2N3053 Micro Electronics - COMPLEMENTARY SILICON TRANSISTORS
  1137. 2N3053 Central - Small Signal Transistors
  1138. 2N3053 SemeLAB - Medium Power Silicon Npn Planar Transistor
  1139. 2N3053 Boca - General Purpose Transistor(npn Silicon)
  1140. 2N3053 Неопределенные - General Purpose Medium Power Silicon Npn Planar Trasistors
  1141. 2N3053A Boca - GENERAL PURPOSE TRANSISTOR(NPN SILICON)
  1142. 2N3053A Неопределенные - GENERAL PURPOSE MEDIUM POWER SILICON NPN PLANAR TRASISTORS
  1143. 2N3053L SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 40V ; IC(cont) = 0.7A ; HFE(min) = 50 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 0.8W
  1144. 2N3053SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 40V ; IC(cont) = 0.7A ; HFE(min) = 50 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 0.8W
  1145. 2N3053SMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 40V ; IC(cont) = 0.7A ; HFE(min) = 50 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 0.8W
  1146. 2N3054 Central - Npn Silicon Power Transistor
  1147. 2N3054 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO66 Metal Package.
  1148. 2N3054 Неопределенные - Power Transistors
  1149. 2N3054 Central - Power Transistors
  1150. 2N3054A Central - NPN SILICON POWER TRANSISTOR
  1151. 2N3054A SemeLAB - Npn Power Transistor InA Hermetic Package
  1152. 2N3054A Central - Power Transistors
  1153. 2N3055 Mospec - Power Transistors(15a,50v,115w)
  1154. 2N3055 Motorola - 15 Ampere Power Transistors Complementary Silicon 60 Volts 115 Watts
  1155. 2N3055 STMicroelectronics - Complementary Silicon Power Transistors
  1156. 2N3055 Siemens - Npn Transistor For Powerful Af Output Stages
  1157. 2N3055 Boca - Complementary Silicon Power Transistors
  1158. 2N3055 Microsemi - Npn Power Silicon Transistor
  1159. 2N3055 Неопределенные - To-3 Power Package Transistors (npn)
  1160. 2N3055 ON Semiconductor - Complementary Silicon Power Transistors
  1161. 2N3055 Motorola - 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts 115, 180 Watts
  1162. 2N3055 Неопределенные - Power Transistors
  1163. 2N3055/5 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 30V ; IC(cont) = 15A ; HFE(min) = 14 ; HFE(max) = - ; @ Vce/ic = 4V / 4A ; FT = 0.8MHz ; PD = 115W
  1164. 2N30556 Неопределенные - TO-3 Power Package Transistors (NPN)
  1165. 2N3055/7 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 15A ; HFE(min) = 15 ; HFE(max) = 70 ; @ Vce/ic = 4V / 3A ; FT = 0.8MHz ; PD = 115W
  1166. 2N3055A Motorola - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS
  1167. 2N3055A Mospec - Power Transistors(15a)
  1168. 2N3055A ON Semiconductor - Complementary Silicon Power Transistors
  1169. 2N3055A Boca - Complementary Silicon High-power Transistors
  1170. 2N3055CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 4V / 4A ; FT = 0.8MHz ; PD = 115W
  1171. 2N3055E SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 20 ; HFE(max) = 70 ; @ Vce/ic = 4V / 4A ; FT = 2.5MHz ; PD = 115W
  1172. 2N3055ECECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 20 ; HFE(max) = 70 ; @ Vce/ic = 4V / 4A ; FT = 2.5MHz ; PD = 115W
  1173. 2N3055ESMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 20 ; HFE(max) = 70 ; @ Vce/ic = 4V / 4A ; FT = 2.5MHz ; PD = 115W
  1174. 2N3055G ON Semiconductor - Complementary Silicon Power Transistors
  1175. 2N3055H ON Semiconductor - Complementary Silicon Power Transistors
  1176. 2N3055HV Неопределенные - TO-3 Power Package Transistors (NPN)
  1177. 2N3055_MJ2955 Motorola - 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS
  1178. 2N3055SD Неопределенные - Power Transistors
  1179. 2N3057 Semicoa - Chip Type 2C3019 Geometry 4500 Polarity PNP
  1180. 2N3057A Semicoa - Chip Type 2C3019 Geometry 4500 Polarity PNP
  1181. 2N3057A Microsemi - LOW POWER NPN SILICON TRANSISTOR
  1182. 2N3057A Semicoa - Type 2n3057a Geometry 4500 Polarity Npn
  1183. 2N3057AJ Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1184. 2N3057AJS Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1185. 2N3057AJV Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1186. 2N3057AJX Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1187. 2N3066 Solitron - Low Power Field Effect Transistor, Case Style = TO-18, Geometry = FN22...
  1188. 2N3067 Solitron - Low Power Field Effect Transistor, Case Style = TO-18, Geometry = FN22...
  1189. 2N3068 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN2.2...
  1190. 2N3069 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP22....
  1191. 2N3070 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP22....
  1192. 2N3071 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN3.6...
  1193. 2N3072 Central - Small Signal Transistors
  1194. 2N3073 Central - Small Signal Transistors
  1195. 2N3085 Solitron - Low Power Field Effect Transistor, Case Style = TO-18, Geometry = FN22...
  1196. 2N3087 Solitron - Low Power Field Effect Transistor, Case Style = TO-18, Geometry = FN22...
  1197. 2N3089 Solitron - Low Power Field Effect Transistor, Case Style = TO-18, Geometry = FN22...
  1198. 2N3089A Solitron - Low Power Field Effect Transistor, Case Style = TO-18, Geometry = FN22...
  1199. 2N3091 IRF - 110 Amp Rms Scrs
  1200. 2N3092 IRF - 110 AMP RMS SCRS
  1201. 2N3093 IRF - 110 AMP RMS SCRS
  1202. 2N3094 IRF - 110 AMP RMS SCRS
  1203. 2N3095 IRF - 110 AMP RMS SCRS
  1204. 2N3096 IRF - 110 AMP RMS SCRS
  1205. 2N3097 IRF - 110 AMP RMS SCRS
  1206. 2N3098 IRF - 110 AMP RMS SCRS
  1207. 2N3107 Central - Small Signal Transistors
  1208. 2N3107 Micro Electronics - Npn Silicon Af Medium Power Amplifiers & Switches
  1209. 2N3108 Central - Small Signal Transistors
  1210. 2N3108 Solitron -
  1211. 2N3109 SemeLAB - Bipolar NPN Device
  1212. 2N3109 Central - Small Signal Transistors
  1213. 2N3110 Central - Small Signal Transistors
  1214. 2N3110 Micro Electronics - NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
  1215. 2N3110 Solitron -
  1216. 2N3114 Central - Small Signal Transistors
  1217. 2N3114CSM SemeLAB - Bipolar Npn Device InA Hermetically Sealed Lcc1 Ceramic Surface Mount Package For High Reliability Applications
  1218. 2N3115 Central - Small Signal Transistors
  1219. 2N3116 Central - Small Signal Transistors
  1220. 2N3117 Central - Small Signal Transistors
  1221. 2N3119 Central - Small Signal Transistors
  1222. 2N3120 Central - Small Signal Transistors
  1223. 2N3121 Central - Small Signal Transistors
  1224. 2N3122 Central - Small Signal Transistors
  1225. 2N3133 Central - Small Signal Transistors
  1226. 2N3134 Central - Small Signal Transistors
  1227. 2N3135 Central - Small Signal Transistors
  1228. 2N3136 Central - Small Signal Transistors
  1229. 2N3137 Central - Small Signal Transistors
  1230. 2N3149 Solitron -
  1231. 2N3150 Solitron -
  1232. 2N3151 Solitron -
  1233. 2N3171 SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 40V ; IC(cont) = 3A ; HFE(min) = 12 ; HFE(max) = 36 ; @ Vce/ic = 3V / 1A ; FT = 1MHz ; PD = 75W
  1234. 2N3171 Solitron -
  1235. 2N3172 SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 3A ; HFE(min) = 12 ; HFE(max) = 36 ; @ Vce/ic = 3V / 1A ; FT = 1MHz ; PD = 75W
  1236. 2N3172 Solitron -
  1237. 2N3173 SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 3A ; HFE(min) = 12 ; HFE(max) = 36 ; @ Vce/ic = 3V / 1A ; FT = 1MHz ; PD = 75W
  1238. 2N3173 Solitron -
  1239. 2N3174 SemeLAB - Bipolar Pnp Device InA Hermetically Sealed To3 Metal Package
  1240. 2N3174 Solitron -
  1241. 2N3183 Solitron -
  1242. 2N3184 Solitron -
  1243. 2N3185 Solitron -
  1244. 2N3186 Solitron -
  1245. 2N319 Неопределенные - alloy-junction germanium transistors
  1246. 2N3195 Solitron -
  1247. 2N3196 Solitron -
  1248. 2N3197 Solitron -
  1249. 2N3198 Solitron -
  1250. 2N320 Неопределенные - alloy-junction germanium transistors
  1251. 2N3202 SemeLAB - Bipolar PNP Device inA Hermetically sealed TO39 Metal Package
  1252. 2N3202 Solitron -
  1253. 2N3203 Solitron -
  1254. 2N3204 Solitron -
  1255. 2N3209 STMicroelectronics - HIGH-SPEED SATURATED SWITCHES
  1256. 2N3209 Central - Small Signal Transistors
  1257. 2N3209CSM SemeLAB - High Speed, Pnp, Switching Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  1258. 2N3209DCSM SemeLAB - Dual High Speed, Medium Power Pnp General Purpose Transistor InA Hermetically Sealed Ceramic Surface Mount Package
  1259. 2N3209L SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 20V ; IC(cont) = 0.2A ; HFE(min) = 30 ; HFE(max) = 120 ; @ Vce/ic = 0.5V / 30mA ; FT = 400MHz ; PD = 0.36W
  1260. 2N321 Неопределенные - alloy-junction germanium transistors
  1261. 2N3210 Central - Small Signal Transistors
  1262. 2N322 Неопределенные - alloy-junction germanium transistors
  1263. 2N3227 Semicoa - Chip Type 2C2369A Geometry 0005 Polarity NPN
  1264. 2N3227J Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 20 ; Vcbo (V) = 40 ; Vebo (V) = 6.0 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.20
  1265. 2N3227JS Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 20 ; Vcbo (V) = 40 ; Vebo (V) = 6.0 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.20
  1266. 2N3227JV Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 20 ; Vcbo (V) = 40 ; Vebo (V) = 6.0 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.20
  1267. 2N3227JX Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 20 ; Vcbo (V) = 40 ; Vebo (V) = 6.0 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.20
  1268. 2N3227UB Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 20 ; Vcbo (V) = 40 ; Vebo (V) = 6.0 ; Ic (A) = 0.20 ; Power (W) ta = 0.4 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.20
  1269. 2N3227UBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 20 ; Vcbo (V) = 40 ; Vebo (V) = 6.0 ; Ic (A) = 0.20 ; Power (W) ta = 0.4 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.20
  1270. 2N3227UBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 20 ; Vcbo (V) = 40 ; Vebo (V) = 6.0 ; Ic (A) = 0.20 ; Power (W) ta = 0.4 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.20
  1271. 2N3227UBJX Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 20 ; Vcbo (V) = 40 ; Vebo (V) = 6.0 ; Ic (A) = 0.20 ; Power (W) ta = 0.4 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.20
  1272. 2N3228 General Semiconductor - 5-a Silicon Controlled Rectifiers
  1273. 2N323 Неопределенные - alloy-junction germanium transistors
  1274. 2N324 Неопределенные - alloy-junction germanium transistors
  1275. 2N3241A Central - Small Signal Transistors
  1276. 2N3242A Central - Small Signal Transistors
  1277. 2N3244 SemeLAB - Bipolar PNP Device inA Hermetically sealed TO39 Metal Package
  1278. 2N3244 Central - Small Signal Transistors
  1279. 2N3245 Central - Small Signal Transistors
  1280. 2N3246 Central - Small Signal Transistors
  1281. 2N3248 Central - Small Signal Transistors
  1282. 2N3249 Central - Small Signal Transistors
  1283. 2N3250 Boca - General Purpose Transistor (pnp Silicon)
  1284. 2N3250A Central - Small Signal Transistors
  1285. 2N3250CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.2A ; HFE(min) = 50 ; HFE(max) = - ; @ Vce/ic = 10V / 100mA ; FT = 250MHz ; PD = 0.36W
  1286. 2N3250DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.2A ; HFE(min) = 50 ; HFE(max) = - ; @ Vce/ic = 10V / 100mA ; FT = 250MHz ; PD = 0.75W
  1287. 2N3250X SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 40V ; IC(cont) = 0.2A ; HFE(min) = 50 ; HFE(max) = - ; @ Vce/ic = 10V / 100mA ; FT = 250MHz ; PD = 0.36W
  1288. 2N3250XCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 40V ; IC(cont) = 0.2A ; HFE(min) = 50 ; HFE(max) = 300 ; @ Vce/ic = 10V / 100mA ; FT = 250MHz ; PD = 0.36W
  1289. 2N3251 Boca - GENERAL PURPOSE TRANSISTOR (PNP SILICON)
  1290. 2N3251 Microsemi - Pnp Bipolar Transistor
  1291. 2N3251A Central - Small Signal Transistors
  1292. 2N3251A Boca - GENERAL PURPOSE TRANSISTOR (PNP SILICON)
  1293. 2N3251A Microsemi - PNP BIPOLAR TRANSISTOR
  1294. 2N3251CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.2A ; HFE(min) = 100 ; HFE(max) = - ; @ Vce/ic = 10V / 100mA ; FT = 300MHz ; PD = 0.36W
  1295. 2N3251DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.2A ; HFE(min) = 100 ; HFE(max) = - ; @ Vce/ic = 10V / 100mA ; FT = 300MHz ; PD = 0.5W
  1296. 2N3252 Central - Small Signal Transistors
  1297. 2N3253 Central - Small Signal Transistors
  1298. 2N3253 Fairchild - Npn Switching Type
  1299. 2N3266 Solitron -
  1300. 2N3299 Central - Small Signal Transistors
  1301. 2N329A ASI - Silicon Transistors
  1302. 2N3300 Central - Small Signal Transistors
  1303. 2N3301 Central - Small Signal Transistors
  1304. 2N3302 Central - Small Signal Transistors
  1305. 2N331 Неопределенные - alloy-junction germanium transistors
  1306. 2N332 ASI - SILICON TRANSISTORS
  1307. 2N3326 Central - Small Signal Transistors
  1308. 2N3328 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP22....
  1309. 2N3329 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3...
  1310. 2N333 ASI - SILICON TRANSISTORS
  1311. 2N3330 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3...
  1312. 2N3331 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3...
  1313. 2N3332 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3...
  1314. 2N334 ASI - SILICON TRANSISTORS
  1315. 2N3347DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 40 ; HFE(max) = 300 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  1316. 2N3348DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 40 ; HFE(max) = 300 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  1317. 2N3349DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.03A ; HFE(min) = 40 ; HFE(max) = 300 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  1318. 2N335 ASI - SILICON TRANSISTORS
  1319. 2N3350DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.2A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 1V / 10mA ; FT = 250MHz ; PD = 0.36W
  1320. 2N3351DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.2A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 1V / 10mA ; FT = 300MHz ; PD = 0.36W
  1321. 2N3352DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.2A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 1V / 10mA ; FT = 300MHz ; PD = 0.36W
  1322. 2N336 ASI - SILICON TRANSISTORS
  1323. 2N3365 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP22....
  1324. 2N3366 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP22....
  1325. 2N3367 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP22....
  1326. 2N3368 Solitron - Low Power Field Effect Transistor, Case Style = TO-18, Geometry = FN3....
  1327. 2N3369 InterFET - N - Channel Jfets General - Purpose Device Types
  1328. 2N3369 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP22....
  1329. 2N337 ASI - SILICON TRANSISTORS
  1330. 2N3370 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  1331. 2N3370 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP22....
  1332. 2N3375 SunLED - silicon transistors UHF/VHF power transistors
  1333. 2N3375 Microsemi - Rf & Microwave Transistors Vhf-uhf Class C Wide Band
  1334. 2N3376 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3...
  1335. 2N3378 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP22....
  1336. 2N338 ASI - SILICON TRANSISTORS
  1337. 2N3380 Solitron - Low Power Field Effect Transistor, Case Style = TO-72, Geometry = FP5....
  1338. 2N3382 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3...
  1339. 2N3384 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP7.3...
  1340. 2N3386 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3...
  1341. 2N3388 Central - Small Signal Transistors
  1342. 2N339 ASI - SILICON TRANSISTORS
  1343. 2N339 Fairchild - Npn General Purpose Amplifier
  1344. 2N3390 Fairchild - NPN General Purpose Amplifier
  1345. 2N3390 General Semiconductor - Silicon Transistors
  1346. 2N3390A General Semiconductor - SILICON TRANSISTORS
  1347. 2N3391 Fairchild - NPN General Purpose Amplifier
  1348. 2N3391A Central - Small Signal Transistors
  1349. 2N3391A Fairchild - NPN General Purpose Amplifier
  1350. 2N3392 Central - Small Signal Transistors
  1351. 2N3392 Fairchild - NPN General Purpose Amplifier
  1352. 2N3393 Central - Small Signal Transistors
  1353. 2N3393 Fairchild - NPN General Purpose Amplifier
  1354. 2N3395 Central - Small Signal Transistors
  1355. 2N3396 Central - Small Signal Transistors
  1356. 2N3397 Central - Small Signal Transistors
  1357. 2N3398 Central - Small Signal Transistors
  1358. 2N340 ASI - SILICON TRANSISTORS
  1359. 2N3402 Central - Small Signal Transistors
  1360. 2N3403 Central - Small Signal Transistors
  1361. 2N3404 Central - Small Signal Transistors
  1362. 2N3405 Central - Small Signal Transistors
  1363. 2N341 ASI - SILICON TRANSISTORS
  1364. 2N3410DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 30V ; IC(cont) = 0.5A ; HFE(min) = 50 ; HFE(max) = - ; @ Vce/ic =V / 0mA ; FT = 250MHz ; PD = 600W
  1365. 2N3411DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 30V ; IC(cont) = 0.5A ; HFE(min) = 50 ; HFE(max) = - ; @ Vce/ic =V / 0mA ; FT = 250MHz ; PD = 600W
  1366. 2N3414 Micro Electronics - Npn Silicon Transistor
  1367. 2N3414 Central - Npn Silicon Transistor
  1368. 2N3415 Central - Small Signal Transistors
  1369. 2N3415 Fairchild - Npn General Purpose Amplifier
  1370. 2N3415 Central - NPN SILICON TRANSISTOR
  1371. 2N3416 Central - Small Signal Transistors
  1372. 2N3416 Fairchild - Npn General Purpose Amplifier
  1373. 2N3416 Central - NPN SILICON TRANSISTOR
  1374. 2N3417 Central - Small Signal Transistors
  1375. 2N3417 Fairchild - NPN General Purpose Amplifier
  1376. 2N3417 Micro Electronics - Npn Silicon Transistor
  1377. 2N3417 Central - NPN SILICON TRANSISTOR
  1378. 2N3418 Microsemi - 3 Amp, 85v, Npn Silicon Power Transistors Jan, Jtx, Jtxv, Jans
  1379. 2N3418 Solitron -
  1380. 2N3418JAN Microsemi - Npn Meduim Power Silicon Transistor Qualified Per Mil-prf-19500/393
  1381. 2N3418JANTX Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1382. 2N3418JANTXV Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1383. 2N3418S Microsemi - NPN Transistor, Package : TO-39
  1384. 2N3419 Microsemi - 3 Amp, 125v, Npn Silicon Power Transistors Jan, Jtx, Jtxv, Jans
  1385. 2N3419 Solitron -
  1386. 2N3419JAN Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1387. 2N3419JANTX Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1388. 2N3419JANTXV Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1389. 2N3419S Microsemi - NPN Transistor, Package : TO-39
  1390. 2N3419SJAN Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1391. 2N3419SJANTX Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1392. 2N3419SJANTXV Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1393. 2N342 ASI - SILICON TRANSISTORS
  1394. 2N3420 Central - Small Signal Transistors
  1395. 2N3420 Microsemi - 3 Amp, 85v, Npn Silicon Power Transistors Jan, Jtx, Jtxv, Jans
  1396. 2N3420 Solitron -
  1397. 2N3420A SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1398. 2N3420AL SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1399. 2N3420ALCC4 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1400. 2N3420JAN Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1401. 2N3420JANTX Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1402. 2N3420JANTXV Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1403. 2N3420L SemeLAB - Dimensions In Mm (inches).
  1404. 2N3420LCC4 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1405. 2N3420S Microsemi - NPN Transistor, Package : TO-39
  1406. 2N3420SJAN Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1407. 2N3420SJANTX Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1408. 2N3420SJANTXV Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1409. 2N3420SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 4A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 2A ; FT = 40MHz ; PD = 0.9W
  1410. 2N3420SMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 60V ; IC(cont) = 4A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 2A ; FT = 40MHz ; PD = 0.9W
  1411. 2N3421 Central - Small Signal Transistors
  1412. 2N3421 Microsemi - 3 Amp, 125v, Npn Silicon Power Transistors Jan, Jtx, Jtxv, Jans
  1413. 2N3421 Solitron -
  1414. 2N3421A SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1415. 2N3421ALCC4 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1416. 2N3421ASMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1417. 2N3421ASMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1418. 2N3421JAN Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1419. 2N3421JANTX Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1420. 2N3421JANTXV Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1421. 2N3421LCC4 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 3A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1422. 2N3421LP SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 3A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1423. 2N3421S Microsemi - NPN Transistor, Package : TO-39
  1424. 2N3421SJAN Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1425. 2N3421SJANTX Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1426. 2N3421SJANTXV Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  1427. 2N3421SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 3A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1428. 2N3421SMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 80V ; IC(cont) = 3A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 0.8W
  1429. 2N3427 Неопределенные - alloy-junction germanium transistors
  1430. 2N3428 Неопределенные - alloy-junction germanium transistors
  1431. 2N343 ASI - SILICON TRANSISTORS
  1432. 2N3436 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN3.6...
  1433. 2N3437 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN3.6...
  1434. 2N3438 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN22....
  1435. 2N3439 Central - Small Signal Transistors
  1436. 2N3439 STMicroelectronics - Silicon Npn Transistors
  1437. 2N3439 SemeLAB - High Voltage Npn Transistors
  1438. 2N3439 Boca - High Voltage Amplifiers
  1439. 2N3439 CDIL - Npn High Voltage Silicon Transistors
  1440. 2N3439 Microsemi - Npn Low Power Silicon Transistor
  1441. 2N3439 Solitron - Planar Power Transistors 1 Amp NPN, Vceo (V) = 350, Hfe Min/max = 40/1...
  1442. 2N3439CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 300V ; IC(cont) = 1A ; HFE(min) = 40 ; HFE(max) = 160 ; @ Vce/ic = 10V / 20mA ; FT = 15MHz ; PD = 5W
  1443. 2N3439CSM4 SemeLAB - High Voltage, Medium Power, Npn Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  1444. 2N3439CSM4R SemeLAB - High Voltage, Medium Power, Npn Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  1445. 2N3439DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 300V ; IC(cont) = 1A ; HFE(min) = 40 ; HFE(max) = 160 ; @ Vce/ic = 10V / 20mA ; FT = 15MHz ; PD = 0.5W
  1446. 2N3439L Microsemi - NPN LOW POWER SILICON TRANSISTOR
  1447. 2N3440 Central - Small Signal Transistors
  1448. 2N3440 STMicroelectronics - SILICON NPN TRANSISTORS
  1449. 2N3440 SemeLAB - HIGH VOLTAGE NPN TRANSISTORS
  1450. 2N3440 Boca - HIGH VOLTAGE AMPLIFIERS
  1451. 2N3440 CDIL - NPN HIGH VOLTAGE SILICON TRANSISTORS
  1452. 2N3440 Microsemi - NPN LOW POWER SILICON TRANSISTOR
  1453. 2N3440 Solitron - Planar Power Transistors 1 Amp NPN, Vceo (V) = 250, Hfe Min/max = 40/1...
  1454. 2N3440CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 250V ; IC(cont) = 1A ; HFE(min) = 40 ; HFE(max) = 160 ; @ Vce/ic = 10V / 20mA ; FT = 15MHz ; PD = 5W
  1455. 2N3440CSM4 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 250V ; IC(cont) = 1A ; HFE(min) = 40 ; HFE(max) = 160 ; @ Vce/ic = 10V / 20mA ; FT = 15MHz ; PD = 5W
  1456. 2N3440CSM4R SemeLAB - HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR INA HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
  1457. 2N3440DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 250V ; IC(cont) = 1A ; HFE(min) = 40 ; HFE(max) = 160 ; @ Vce/ic = 10V / 20mA ; FT = 15MHz ; PD = 5W
  1458. 2N3440L Microsemi - NPN LOW POWER SILICON TRANSISTOR
  1459. 2N3440S SemeLAB - Bipolar Npn Device InA Hermetically Sealed To39 Metal Package. Bipolar Npn Device.
  1460. 2N3441 Mospec - Power Transistors(3a,140v,25w)
  1461. 2N3441 SemeLAB - Medium Power Silicon Npn Transistor
  1462. 2N3441 Boca - Npn Silicon Power Transistor
  1463. 2N3441 Microsemi - Npn Power Silicon Transistor
  1464. 2N3442 Mospec - Power Transistors
  1465. 2N3442 Motorola - 10 Ampere Power Transistor Npn Silicon 140 Volts 117 Watts
  1466. 2N3442 Boca - High-power Industrial Transistors
  1467. 2N3442 Microsemi - Npn High Power Silicon Transistor
  1468. 2N3444 Central - Small Signal Transistors
  1469. 2N3445 SemeLAB - Bipolar Npn Device InA Hermetically Sealed To3 Metal Package
  1470. 2N3446 SemeLAB - Bipolar Npn Device InA Hermetically Sealed To3 Metal Package
  1471. 2N3447 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
  1472. 2N3448 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 7.5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 5V / 5A ; FT = 10MHz ; PD = 115W
  1473. 2N3452 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN2.2...
  1474. 2N3453 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN2.2...
  1475. 2N3454 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN2.2...
  1476. 2N3455 Solitron - Low Power Field Effect Transistor, Case Style = TO-18, Geometry = FN2....
  1477. 2N3456 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN2.2...
  1478. 2N3457 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN2.2...
  1479. 2N3458 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  1480. 2N3458 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN3.6...
  1481. 2N3459 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  1482. 2N3459 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN3.6...
  1483. 2N3460 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  1484. 2N3460 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN3.6...
  1485. 2N3467 Central - Small Signal Transistors
  1486. 2N3467 Semicoa - Type 2n3467 Geometry 6706 Polarity Pnp
  1487. 2N3467 SemeLAB - Bipolar Pnp Device InA Hermetically Sealed To39 Metal Package
  1488. 2N3467 Central - Small Signal Transistor Pnp- Saturated Switch Transistor Chip
  1489. 2N3467L Semicoa - Type 2n3467l Geometry 6706 Polarity Pnp
  1490. 2N3468 Central - Small Signal Transistors
  1491. 2N3468 Semicoa - Type 2n3468 Geometry 6706 Polarity Pnp
  1492. 2N3468 Central - Small Signal Transistor PNP- Saturated Switch Transistor Chip
  1493. 2N3468L Semicoa - Type 2n3468l Geometry 6706 Polarity Pnp
  1494. 2N3469 Solitron -
  1495. 2N3478 Central - Small Signal NPN Transistors / Dual Transistors
  1496. 2N3478 Boca - Npn Silicon Planar Transistor
  1497. 2N3485 Semicoa - Chip Type 2C2904A Geometry 0600 Polarity PNP
  1498. 2N3485 Central - Small Signal Transistors
  1499. 2N3485A Semicoa - Chip Type 2C2904A Geometry 0600 Polarity PNP
  1500. 2N3485A Central - Small Signal Transistors
  1501. 2N3485A Semicoa - Type 2n3485a Geometry 0600 Polarity Pnp
  1502. 2N3485AJ Semicoa - Package = TO-46 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  1503. 2N3485AJV Semicoa - Package = TO-46 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  1504. 2N3485AJX Semicoa - Package = TO-46 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.40
  1505. 2N3486 Semicoa - Chip Type 2C2907A Geometry 0600 Polarity PNP
  1506. 2N3486 Central - Small Signal Transistors
  1507. 2N3486A Semicoa - Chip Type 2C2907A Geometry 0600 Polarity PNP
  1508. 2N3486A Central - Small Signal Transistors
  1509. 2N3486A Semicoa - Type 2n3486a Geometry 0600 Polarity Pnp
  1510. 2N3486AJ Semicoa - Package = TO-46 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  1511. 2N3486AJV Semicoa - Package = TO-46 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  1512. 2N3486AJX Semicoa - Package = TO-46 ; Level = Jantxv ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.60 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.40
  1513. 2N3486CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.6A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 10mA ; FT = 200MHz ; PD = 0.4W
  1514. 2N3487 Solitron -
  1515. 2N3488 Solitron -
  1516. 2N3489 Solitron -
  1517. 2N3490 Solitron -
  1518. 2N3491 Solitron -
  1519. 2N3492 Solitron -
  1520. 2N3494 Central - Small Signal Transistors
  1521. 2N3495 Central - Small Signal Transistors
  1522. 2N3496 Central - Small Signal Transistors
  1523. 2N3497 Central - Small Signal Transistors
  1524. 2N3497 Semicoa - Type 2n3498 Geometry 5620 Polarity Npn
  1525. 2N3498 Semicoa - Chip Type 2C3501 Geometry 5620 Polarity NPN
  1526. 2N3498 Central - Small Signal Transistors
  1527. 2N3498 Microsemi - Npn Silicon Transistor
  1528. 2N3498 Semicoa - Type 2N3498 Geometry 5620 Polarity NPN
  1529. 2N3498J Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1530. 2N3498JV Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1531. 2N3498JX Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1532. 2N3498L Semicoa - Chip Type 2C3501 Geometry 5620 Polarity NPN
  1533. 2N3498L Microsemi - NPN SILICON TRANSISTOR
  1534. 2N3498LJ Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1535. 2N3498LJV Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1536. 2N3498LJX Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1537. 2N3499 Semicoa - Chip Type 2C3501 Geometry 5620 Polarity NPN
  1538. 2N3499 Central - Small Signal Transistors
  1539. 2N3499 Microsemi - NPN SILICON TRANSISTOR
  1540. 2N3499 Semicoa - Type 2n3499 Geometry 5620 Polarity Npn
  1541. 2N3499J Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1542. 2N3499JV Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1543. 2N3499JX Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1544. 2N3499L Semicoa - Chip Type 2C3501 Geometry 5620 Polarity NPN
  1545. 2N3499L Microsemi - NPN SILICON TRANSISTOR
  1546. 2N3499L Semicoa - Type 2n3499l Geometry 5620 Polarity Npn
  1547. 2N3499LJ Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1548. 2N3499LJV Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1549. 2N3499LJX Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 100 ; Vcbo (V) = 100 ; Vebo (V) = 6.0 ; Ic (A) = 0.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1550. 2N3500 Semicoa - Chip Type 2C3501 Geometry 5620 Polarity NPN
  1551. 2N3500 Central - Small Signal Transistors
  1552. 2N3500 Microsemi - NPN SILICON TRANSISTOR
  1553. 2N3500 Boca - General Purpose Transistor (npn Silicon)
  1554. 2N3500 Semicoa - Type 2n3500 Geometry 5620 Polarity Npn
  1555. 2N3500J Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1556. 2N3500JV Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1557. 2N3500JX Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1558. 2N3500L Semicoa - Chip Type 2C3501 Geometry 5620 Polarity NPN
  1559. 2N3500L Microsemi - NPN SILICON TRANSISTOR
  1560. 2N3500L Semicoa - Type 2n3500l Geometry 5620 Polarity Npn
  1561. 2N3500LJ Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1562. 2N3500LJV Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1563. 2N3500LJX Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  1564. 2N3501 Semicoa - Chip Type 2C3501 Geometry 5620 Polarity NPN
  1565. 2N3501 Central - Small Signal Transistors
  1566. 2N3501 Microsemi - NPN SILICON TRANSISTOR
  1567. 2N3501 Boca - GENERAL PURPOSE TRANSISTOR (NPN SILICON)
  1568. 2N3501 Microsemi - Npn Bipolar Transistor
  1569. 2N3501CSM4 SemeLAB - High Voltage, Medium Power, Npn Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  1570. 2N3501DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 150V ; IC(cont) = 0.3A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 150MHz ; PD = 1W
  1571. 2N3501J Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1572. 2N3501JS Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1573. 2N3501JV Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1574. 2N3501JX Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1575. 2N3501L Semicoa - Chip Type 2C3501 Geometry 5620 Polarity NPN
  1576. 2N3501L Microsemi - NPN SILICON TRANSISTOR
  1577. 2N3501L Semicoa - Type 2n3501l Geometry 5620 Polarity Npn
  1578. 2N3501LJ Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1579. 2N3501LJS Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1580. 2N3501LJV Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1581. 2N3501LJX Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1582. 2N3501UB Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1583. 2N3501UBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1584. 2N3501UBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1585. 2N3501UBJX Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 150 ; Vcbo (V) = 150 ; Vebo (V) = 6.0 ; Ic (A) = 0.30 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1586. 2N3502 Central - Small Signal Transistors
  1587. 2N3502 SemeLAB - Pnp Silicon Planar Epitaxial Transistors
  1588. 2N3503 Central - Small Signal Transistors
  1589. 2N3503 SemeLAB - PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  1590. 2N3504 Central - Small Signal Transistors
  1591. 2N3504 SemeLAB - PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  1592. 2N3505 Central - Small Signal Transistors
  1593. 2N3505 SemeLAB - PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  1594. 2N3506 Semicoa - Chip Type 2C3506 Geometry 1506 Polarity NPN
  1595. 2N3506 Central - Small Signal Transistors
  1596. 2N3506 Solitron - Planar Power Transistors 3 Amp NPN, Vceo (V) = 40, Hfe Min/max = 40/12...
  1597. 2N3506 Semicoa - Type 2n3506 Geometry 1506 Polarity Npn
  1598. 2N3506A Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1599. 2N3506AJ Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1600. 2N3506AJS Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1601. 2N3506AJV Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1602. 2N3506AJX Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1603. 2N3506AL Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1604. 2N3506ALJ Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1605. 2N3506ALJS Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1606. 2N3506ALJX Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1607. 2N3506J Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1608. 2N3506JS Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1609. 2N3506JV Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1610. 2N3506JX Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1611. 2N3506L Semicoa - Chip Type 2C3506 Geometry 1506 Polarity NPN
  1612. 2N3506L Semicoa - Type 2N3506L Geometry 1506 Polarity NPN
  1613. 2N3506LJ Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1614. 2N3506LJS Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1615. 2N3506LJV Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1616. 2N3506LJX Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 60 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  1617. 2N3507 Semicoa - Chip Type 2C3506 Geometry 1506 Polarity NPN
  1618. 2N3507 Central - Small Signal Transistors
  1619. 2N3507 Solitron - Planar Power Transistors 3 Amp NPN, Vceo (V) = 50, Hfe Min/max = 30/15...
  1620. 2N3507 Semicoa - Type 2n3507 Geometry 1506 Polarity Npn
  1621. 2N3507A Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1622. 2N3507AJ Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1623. 2N3507AJS Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1624. 2N3507AJV Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1625. 2N3507AJX Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1626. 2N3507AL Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1627. 2N3507ALJ Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1628. 2N3507ALJS Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1629. 2N3507ALJX Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1630. 2N3507J Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1631. 2N3507JS Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1632. 2N3507JV Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1633. 2N3507JX Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1634. 2N3507L Semicoa - Chip Type 2C3506 Geometry 1506 Polarity NPN
  1635. 2N3507L Semicoa - Type 2N3507L Geometry 1506 Polarity NPN
  1636. 2N3507LJ Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1637. 2N3507LJS Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1638. 2N3507LJV Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1639. 2N3507LJX Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 50 ; Vcbo (V) = 80 ; Vebo (V) = 5.0 ; Ic (A) = 3.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 1.00
  1640. 2N3507X SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 50V ; IC(cont) = 3A ; HFE(min) = 30 ; HFE(max) = 120 ; @ Vce/ic =V / 0mA ; FT = 60MHz ; PD = 1W
  1641. 2N3508 Central - Small Signal Transistors
  1642. 2N3509 Central - Small Signal Transistors
  1643. 2N3509CSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 20V ; IC(cont) = 0.5A ; HFE(min) = 100 ; HFE(max) = 200 ; @ Vce/ic = 1V / 10mA ; FT = 500MHz ; PD = 0.4W
  1644. 2N3509DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 20V ; IC(cont) = 0.5A ; HFE(min) = 100 ; HFE(max) = 200 ; @ Vce/ic = 1V / 10mA ; FT = 500MHz ; PD = 0.4W
  1645. 2N3525 General Semiconductor - 5-A SILICON CONTROLLED RECTIFIERS
  1646. 2N3535 SemeLAB - Bipolar NPNP Device inA Hermetically sealed TO39 Metal Package.
  1647. 2N3536 SemeLAB - Bipolar Npnp Device InA Hermetically Sealed To39 Metal Package.
  1648. 2N3537 SemeLAB - Bipolar NPNP Device inA Hermetically sealed TO39 Metal Package
  1649. 2N3545 Central - Small Signal Transistors
  1650. 2N3546 Central - Small Signal Transistors
  1651. 2N3547 Central - Small Signal Transistors
  1652. 2N3548 Central - Small Signal Transistors
  1653. 2N3548 Micro Electronics - Complementary Silicon Af Low Noise Small Signal Transistors
  1654. 2N3549 Central - Small Signal Transistors
  1655. 2N3550 Central - Small Signal Transistors
  1656. 2N3553 SunLED - silicon transistors UHF/VHF power transistors
  1657. 2N3553 Philips - Silicon Planar Epitaxial Overlay Transistor
  1658. 2N3554 Central - Small Signal Transistors
  1659. 2N3558 SemeLAB - Bipolar NPNP Device inA Hermetically sealed TO39 Metal Package
  1660. 2N3565 Fairchild - Npn General Purpose Amplifier
  1661. 2n3567 Central -
  1662. 2n3568 Central -
  1663. 2n3569 Central -
  1664. 2N3570 ASI - NPN SILICON HIGH FREQUENCY TRANSISTOR
  1665. 2N3574 Solitron - Low Power Field Effect Transistor, Case Style = TO-72, Geometry = FP22...
  1666. 2N3576 Central - Small Signal Transistors
  1667. 2N3578 Solitron - Low Power Field Effect Transistor, Case Style = TO-18, Geometry = FP22...
  1668. 2N3583 Central - Power Transistors
  1669. 2N3583 Mospec - Power Transistors(35w)
  1670. 2N3583 Boca - Complementary Medium-power High Voltage Power Transistors
  1671. 2N3583 Microsemi - 5 Amp, 250v, High Voltage Npn Silicon Power Transistors
  1672. 2N3583 Solitron -
  1673. 2N3584 Central - Power Transistors
  1674. 2N3584 Mospec - POWER TRANSISTORS(35W)
  1675. 2N3584 Boca - COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
  1676. 2N3584 Microsemi - 5 Amp, 375v, High Voltage Npn Silicon Power Transistors
  1677. 2N3584 Solitron -
  1678. 2N3584 Microsemi - Npn High Power Silicon Transistor
  1679. 2N3584X SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO66 (TO213AA) ; Vceo = 250V ; IC(cont) = 2A ; HFE(min) = 25 ; HFE(max) = 100 ; @ Vce/ic = 10V / 1A ; FT = 10MHz ; PD = 35W
  1680. 2N3585 Central - Power Transistors
  1681. 2N3585 Mospec - POWER TRANSISTORS(35W)
  1682. 2N3585 Boca - COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
  1683. 2N3585 Microsemi - NPN HIGH POWER SILICON TRANSISTOR
  1684. 2N3585 Solitron -
  1685. 2N3585 Microsemi - 5 Amp, 500v, High Voltage Npn Silicon Power Transistors
  1686. 2N3597 Solitron -
  1687. 2N3598 Solitron -
  1688. 2N3599 Solitron -
  1689. 2N3600 STMicroelectronics - High-frequency Oscillators and Amplifiers
  1690. 2N3632 SunLED - silicon transistors UHF/VHF power transistors
  1691. 2N3632 Microsemi - RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND
  1692. 2N3634 Central - Small Signal Transistors
  1693. 2N3634 Boca - General Purpose Transistor (pnp Silicon)
  1694. 2N3634 Microsemi - Pnp Silicon Amplifier Transistor
  1695. 2N3634CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 140V ; IC(cont) = 1A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 10V / 50mA ; FT = - ; PD = 0.4W
  1696. 2N3634L Microsemi - PNP SILICON AMPLIFIER TRANSISTOR
  1697. 2N3635 Central - Small Signal Transistors
  1698. 2N3635 Boca - GENERAL PURPOSE TRANSISTOR (PNP SILICON)
  1699. 2N3635 Microsemi - PNP SILICON AMPLIFIER TRANSISTOR
  1700. 2N3635L Microsemi - PNP SILICON AMPLIFIER TRANSISTOR
  1701. 2N3636 Boca - GENERAL PURPOSE TRANSISTOR (PNP SILICON)
  1702. 2N3636 Microsemi - PNP SILICON AMPLIFIER TRANSISTOR
  1703. 2N3636L Microsemi - PNP SILICON AMPLIFIER TRANSISTOR
  1704. 2N3637 Boca - GENERAL PURPOSE TRANSISTOR (PNP SILICON)
  1705. 2N3637 Microsemi - PNP SILICON AMPLIFIER TRANSISTOR
  1706. 2N3637 SemeLAB - Pnp Silicon Transistor
  1707. 2N3637/3501DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 175V ; IC(cont) = 1A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 50mA ; FT = - ; PD = 1W
  1708. 2N3637CSM SemeLAB - Pnp Silicon Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  1709. 2N3637DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 175V ; IC(cont) = 1A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 50mA ; FT = - ; PD = 1W
  1710. 2N3637L Microsemi - PNP SILICON AMPLIFIER TRANSISTOR
  1711. 2n3641 Central -
  1712. 2n3642 Central -
  1713. 2n3643 Central -
  1714. 2N3646 Central - NPN SILICON SWITCHING TRANSISTORS
  1715. 2N3647 Central - Small Signal Transistors
  1716. 2N3648 Central - Small Signal Transistors
  1717. 2N3654 Неопределенные - 35-a Silicon Controlled Rectifiers
  1718. 2N3655 Неопределенные - 35-A SILICON CONTROLLED RECTIFIERS
  1719. 2N3656 Неопределенные - 35-A SILICON CONTROLLED RECTIFIERS
  1720. 2N3657 Неопределенные - 35-A SILICON CONTROLLED RECTIFIERS
  1721. 2N3658 Неопределенные - 35-A SILICON CONTROLLED RECTIFIERS
  1722. 2N3660 Central - Small Signal Transistors
  1723. 2N3660 Solitron -
  1724. 2N3661 Central - Small Signal Transistors
  1725. 2N3661 Solitron -
  1726. 2N3663 Fairchild - Npn Rf Transistor
  1727. 2N3665 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
  1728. 2N3665 Central - Small Signal Transistors
  1729. 2N3665 Solitron - Planar Power Transistors 1 Amp NPN, Vceo (V) = 80, Hfe Min/max = 40/12...
  1730. 2N3666 Central - Small Signal Transistors
  1731. 2N3666 Solitron -
  1732. 2N3668 General Semiconductor - 12.5a Silicon Controlled Rectifiers
  1733. 2N3668 Central - Silicon Controlled Rectifier 16amps 220 Thru 800 Volts Jedec To-3 Case
  1734. 2N3669 General Semiconductor - 12.5A SILICON CONTROLLED RECTIFIERS
  1735. 2N3669 Central - SILICON CONTROLLED RECTIFIER 16AMPS 220 THRU 800 VOLTS JEDEC TO-3 CASE
  1736. 2N3670 General Semiconductor - 12.5A SILICON CONTROLLED RECTIFIERS
  1737. 2N3670 Central - SILICON CONTROLLED RECTIFIER 16AMPS 220 THRU 800 VOLTS JEDEC TO-3 CASE
  1738. 2N3671 Central - Small Signal Transistors
  1739. 2N3672 Central - Small Signal Transistors
  1740. 2N3673 Central - Small Signal Transistors
  1741. 2N3675 Solitron -
  1742. 2N3676 SemeLAB - Bipolar Npn Device InA Hermetically Sealed To39 Metal Package
  1743. 2N3676 Solitron -
  1744. 2N3678 Central - Small Signal Transistors
  1745. 2N3680DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 50V ; IC(cont) = 0.03A ; HFE(min) = 150 ; HFE(max) = 600 ; @ Vce/ic = 5V / 0.01mA ; FT = 60MHz ; PD = 0.6W
  1746. 2N3684 Calogic - N Channel Jfet Low Noise Amplifier
  1747. 2N3684 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN22....
  1748. 2N3684A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN22....
  1749. 2N3685 Calogic - N CHANNEL JFET LOW NOISE AMPLIFIER
  1750. 2N3685 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN22....
  1751. 2N3685A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN22....
  1752. 2N3686 Calogic - N CHANNEL JFET LOW NOISE AMPLIFIER
  1753. 2N3686 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN22....
  1754. 2N3686A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN22....
  1755. 2N3687 Calogic - N CHANNEL JFET LOW NOISE AMPLIFIER
  1756. 2N3687 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN22....
  1757. 2N3687A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN22....
  1758. 2N3695 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP22....
  1759. 2N3696 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP22....
  1760. 2N3697 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP22....
  1761. 2N3698 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP22....
  1762. 2N3700 Semicoa - Chip Type 2C3019 Geometry 4500 Polarity PNP
  1763. 2N3700 Boca - GENERAL TRANSISTOR NPN SILICON
  1764. 2N3700 Microsemi - LOW POWER NPN SILICON TRANSISTOR
  1765. 2N3700 Central - Small Signal Transistors
  1766. 2N3700 Semicoa - Type 2n3700 Geometry 4500 Polarity Npn
  1767. 2N3700 Microsemi - Npn Bipolar Transistor
  1768. 2N3700CSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 80V ; IC(cont) = 1A ; HFE(min) = 100 ; HFE(max) = - ; @ Vce/ic = 90V / 0mA ; FT = 100MHz ; PD = 0.5W
  1769. 2N3700DCSM SemeLAB - High Voltage, Medium Power, Npn Dual Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  1770. 2N3700J Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1771. 2N3700JS Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1772. 2N3700JV Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1773. 2N3700JX Semicoa - Package = TO-18 ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1774. 2N3700S Microsemi - LOW POWER NPN SILICON TRANSISTOR
  1775. 2N3700UB Semicoa - Chip Type 2C3019 Geometry 4500 Polarity PNP
  1776. 2N3700UB Semicoa - Type 2n3700ub Geometry 4500 Polarity Npn
  1777. 2N3700UBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1778. 2N3700UBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1779. 2N3700UBJX Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 80 ; Vcbo (V) = 140 ; Vebo (V) = 7.0 ; Ic (A) = 1.00 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  1780. 2N3701 Central - Small Signal Transistors
  1781. 2N3702 Central - Small Signal Transistors
  1782. 2N3702 Fairchild - Pnp General Purpose Amplifier
  1783. 2N3702 Micro Electronics - Pnp/npn Silicon General Purpose Af Transistors
  1784. 2N3702 Micro Electronics - Pnp Npn Silicon General Purpose Af Transistors
  1785. 2N3703 Central - Small Signal Transistors
  1786. 2N3703 Micro Electronics - PNP NPN SILICON GENERAL PURPOSE AF TRANSISTORS
  1787. 2N3703 Fairchild - Pnp General Purpose Amplifier
  1788. 2N3704 Central - Small Signal Transistors
  1789. 2N3704 Micro Electronics - PNP NPN SILICON GENERAL PURPOSE AF TRANSISTORS
  1790. 2N3704 Fairchild - Npn General Purpose Amplifier
  1791. 2N3705 Central - Small Signal Transistors
  1792. 2N3705 Micro Electronics - PNP NPN SILICON GENERAL PURPOSE AF TRANSISTORS
  1793. 2N3706 Central - Small Signal Transistors
  1794. 2N3706 Micro Electronics - PNP/NPN SILICON GENERAL PURPOSE AF TRANSISTORS
  1795. 2N3706 Micro Electronics - PNP NPN SILICON GENERAL PURPOSE AF TRANSISTORS
  1796. 2N3707 Central - Small Signal Transistors
  1797. 2N3707 Micro Electronics - Npn/pnp Silicon Af Small Signal Transistors
  1798. 2N3708 Central - Small Signal Transistors
  1799. 2N3708 Micro Electronics - NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
  1800. 2N3709 Central - Small Signal Transistors
  1801. 2N3709 Micro Electronics - NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
  1802. 2N3710 Central - Small Signal Transistors
  1803. 2N3710 Micro Electronics - NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
  1804. 2N3711 Central - Small Signal Transistors
  1805. 2N3711 Micro Electronics - NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
  1806. 2N3713 Mospec - Power Transistors(10a,150w)
  1807. 2N3713 Boca - Silicon Npn Power Transistors
  1808. 2N3713 Solitron -
  1809. 2N3713CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = 90 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1810. 2N3713SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = 90 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1811. 2N3714 Boca - SILICON NPN POWER TRANSISTORS
  1812. 2N3714 Solitron -
  1813. 2N3714CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = 90 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1814. 2N3714SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = 90 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1815. 2N3715 Boca - SILICON NPN POWER TRANSISTORS
  1816. 2N3715 Motorola - 10 Ampere Power Transistors Silicon Npn 60.80 Volts 150 Watts
  1817. 2N3715 Microsemi - Npn High Power Silicon Transistor
  1818. 2N3715 Solitron -
  1819. 2N3715CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1820. 2N3715SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1821. 2N3715X SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 200 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1822. 2N3716 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
  1823. 2N3716 Mospec - POWER TRANSISTORS(10A,150W)
  1824. 2N3716 Boca - SILICON NPN POWER TRANSISTORS
  1825. 2N3716 Motorola - 10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS
  1826. 2N3716 Microsemi - NPN HIGH POWER SILICON TRANSISTOR
  1827. 2N3716 Solitron -
  1828. 2N3716CECC SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1829. 2N3716SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1830. 2N3716X SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 200 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1831. 2N3719 Central - Small Signal Transistors
  1832. 2N3719 Microsemi - Silicon Pnp Power Transistors
  1833. 2N3719 Solitron - Planar Power Transistors 3 Amp PNP, Vceo (V) = 40, Hfe Min/max = 25/18...
  1834. 2N3719CECC SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 3A ; HFE(min) = 25 ; HFE(max) = 180 ; @ Vce/ic = 1.5V / 1A ; FT = 60MHz ; PD = 6W
  1835. 2N3720 Central - Small Signal Transistors
  1836. 2N3720 Microsemi - Silicon Pnp Power Transistors
  1837. 2N3720 Solitron - Planar Power Transistors 3 Amp PNP, Vceo (V) = 60, Hfe Min/max = 25/18...
  1838. 2N3720CECC SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 60V ; IC(cont) = 3A ; HFE(min) = 25 ; HFE(max) = 180 ; @ Vce/ic = 1.5V / 1A ; FT = 60MHz ; PD = 6W
  1839. 2N3722 Central - Small Signal Transistors
  1840. 2N3724 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
  1841. 2N3724A Central - Small Signal Transistors
  1842. 2N3725 STMicroelectronics - High Voltage, High Current Switch
  1843. 2N3725A Central - Small Signal Transistors
  1844. 2N3725L SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 50V ; IC(cont) = 0.5A ; HFE(min) = 60 ; HFE(max) = 150 ; @ Vce/ic = 1V / 100mA ; FT = 300MHz ; PD = 0.8W
  1845. 2N3726 Central - Dual Transistors
  1846. 2N3726 Central - Pnp Dual Silicon Transistor
  1847. 2N3727 Central - Dual Transistors
  1848. 2N3727 Central - PNP DUAL SILICON TRANSISTOR
  1849. 2N3733 SunLED - silicon transistors UHF/VHF power transistors
  1850. 2N3733 Microsemi - RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND
  1851. 2N3734 SemeLAB - Bipolar NPN Device in aHermetically sealed TO39 Metal Package
  1852. 2N3734 Central - Small Signal Transistors
  1853. 2N3735 Motorola - UHF/VHF TRANSISTOR PMP SILICON
  1854. 2N3735 Central - Small Signal Transistors
  1855. 2N3735 Semicoa - Type 2n3735 Geometry Tbd Polarity Npn
  1856. 2N3735CSM4 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC3 (MO-041BA) ; Vceo = 50V ; IC(cont) = 1.5A ; HFE(min) = 20 ; HFE(max) = 80 ; @ Vce/ic = 1.5V / 1A ; FT = 250MHz ; PD = 0.5W
  1857. 2N3735J Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1858. 2N3735JS Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1859. 2N3735JV Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1860. 2N3735JX Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1861. 2N3735L Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1862. 2N3735LJ Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1863. 2N3735LJS Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1864. 2N3735LJV Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1865. 2N3735LJX Semicoa - Package = TO-5 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1866. 2N3736 Central - Small Signal Transistors
  1867. 2N3737 Central - Small Signal Transistors
  1868. 2N3737 Motorola - UHF/VHF TRANSISTOR PMP SILICON
  1869. 2N3737 Semicoa - Type 2n3737 Geometry Tbd Polarity Npn
  1870. 2N3737J Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 0.5 ; Rtja (C/W) = 350 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1871. 2N3737JS Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 0.5 ; Rtja (C/W) = 350 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1872. 2N3737JV Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 0.5 ; Rtja (C/W) = 350 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1873. 2N3737JX Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 0.5 ; Rtja (C/W) = 350 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1874. 2N3737UB Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 0.5 ; Rtja (C/W) = 350 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1875. 2N3737UBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 0.5 ; Rtja (C/W) = 350 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1876. 2N3737UBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 0.5 ; Rtja (C/W) = 350 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1877. 2N3737UBJX Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 40 ; Vcbo (V) = 75 ; Vebo (V) = 5.0 ; Ic (A) = 1.50 ; Power (W) ta = 0.5 ; Rtja (C/W) = 350 ; Tstg/top (C) = -65 to +200 ; Hfe = 140 ; VCE(sat) (V) = 0.20
  1878. 2N3738 Central - Power Transistors
  1879. 2N3738 SemeLAB - Power Transistors Npn Silicon
  1880. 2N3738 Solitron -
  1881. 2N3739 Central - Power Transistors
  1882. 2N3739 SemeLAB - POWER TRANSISTORS NPN SILICON
  1883. 2N3739 Solitron -
  1884. 2N3740 Central - Power Transistors
  1885. 2N3740 Mospec - Power Transistors(4a,25w)
  1886. 2N3740 Boca - Medium-power Pnp Transistors
  1887. 2N3740 Microsemi - Medium Power Pnp Transistors
  1888. 2N3740 Solitron -
  1889. 2N3740 Central - Pnp Silicon Power Transistors
  1890. 2N3740 Microsemi - Pnp Power Silicon Transistor
  1891. 2N3740A Central - Power Transistors
  1892. 2N3740A Microsemi - Medium Power Pnp Transistors
  1893. 2N3740A Solitron -
  1894. 2N3740A Central - PNP SILICON POWER TRANSISTORS
  1895. 2N3740AR SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO66 (TO213AA) ; Vceo = 60V ; IC(cont) = 4A ; HFE(min) = 30 ; HFE(max) = 180 ; @ Vce/ic = 1V / 250mA ; FT = 4MHz ; PD = 25W
  1896. 2N3740R SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO66 (TO213AA) ; Vceo = 60V ; IC(cont) = 4A ; HFE(min) = 30 ; HFE(max) = 180 ; @ Vce/ic = 1V / 250mA ; FT = 4MHz ; PD = 25W
  1897. 2N3741 Central - Power Transistors
  1898. 2N3741 Mospec - POWER TRANSISTORS(4A,25W)
  1899. 2N3741 Boca - MEDIUM-POWER PNP TRANSISTORS
  1900. 2N3741 Microsemi - PNP POWER SILICON TRANSISTOR
  1901. 2N3741 Solitron -
  1902. 2N3741 Central - PNP SILICON POWER TRANSISTORS
  1903. 2N3741 Microsemi - Medium Power Pnp Transistors
  1904. 2N3741A Central - Power Transistors
  1905. 2N3741A Microsemi - Medium Power Pnp Transistors
  1906. 2N3741A Solitron -
  1907. 2N3741A Central - PNP SILICON POWER TRANSISTORS
  1908. 2N3741R SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO66 (TO213AA) ; Vceo = 80V ; IC(cont) = 4A ; HFE(min) = 30 ; HFE(max) = 180 ; @ Vce/ic = 1V / 250mA ; FT = 4MHz ; PD = 25W
  1909. 2N3741SMD SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 4A ; HFE(min) = 30 ; HFE(max) = 180 ; @ Vce/ic = 1V / 250mA ; FT = 4MHz ; PD = 25W
  1910. 2N3742 Central - Small Signal Transistors
  1911. 2N3743 Central - Small Signal Transistors
  1912. 2N3743 Microsemi - Pnp High Voltage Silicon Transistor
  1913. 2N3744 Solitron -
  1914. 2N3745 Solitron -
  1915. 2N3746 Solitron -
  1916. 2N3747 Solitron -
  1917. 2N3748 Solitron -
  1918. 2N3749 Microsemi - PNP POWER SILICON TRANSISTOR
  1919. 2N3749 Solitron -
  1920. 2N3750 Solitron -
  1921. 2N3751 Solitron -
  1922. 2N3752 Solitron -
  1923. 2N3762 Central - Small Signal Transistors
  1924. 2N3762 Semicoa - Type 2n3762 Geometry 6706 Polarity Pnp
  1925. 2N3762 Microsemi - Pnp Switching Silicon Transistor
  1926. 2N3762L Microsemi - PNP SWITCHING SILICON TRANSISTOR
  1927. 2N3762L Semicoa - Type 2n3762l Geometry 6706 Polarity Pnp
  1928. 2N3763 Central - Small Signal Transistors
  1929. 2N3763 Microsemi - PNP SWITCHING SILICON TRANSISTOR
  1930. 2N3763 Semicoa - Type 2n3763 Geometry 6706 Polarity Pnp
  1931. 2N3763L Microsemi - PNP SWITCHING SILICON TRANSISTOR
  1932. 2N3763L Semicoa - Type 2n3763l Geometry 6706 Polarity Pnp
  1933. 2N3764 Central - Small Signal Transistors
  1934. 2N3764 Microsemi - PNP SWITCHING SILICON TRANSISTOR
  1935. 2N3764 Semicoa - Type 2n3764 Geometry 6706 Polarity Pnp
  1936. 2N3765 Microsemi - PNP SWITCHING SILICON TRANSISTOR
  1937. 2N3765 Semicoa - Type 2n3765 Geometry 6706 Polarity Pnp
  1938. 2N3766 Central - Power Transistors
  1939. 2N3766 Microsemi - Npn Power Silicon Transistor
  1940. 2N3766 Solitron -
  1941. 2N3766SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 4A ; HFE(min) = 40 ; HFE(max) = 160 ; @ Vce/ic = 5V / 500mA ; FT = 10MHz ; PD = 25W
  1942. 2N3766SMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 60V ; IC(cont) = 4A ; HFE(min) = 40 ; HFE(max) = 160 ; @ Vce/ic = 5V / 500mA ; FT = 10MHz ; PD = 25W
  1943. 2N3767 Central - Power Transistors
  1944. 2N3767 Microsemi - NPN POWER SILICON TRANSISTOR
  1945. 2N3767 SemeLAB - Bipolar Npn Device InA Hermetically Sealed To66 Metal Package
  1946. 2N3767 Solitron -
  1947. 2N3767SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 4A ; HFE(min) = 40 ; HFE(max) = 160 ; @ Vce/ic = 5V / 500mA ; FT = 10MHz ; PD = 25W
  1948. 2N3767SMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 80V ; IC(cont) = 4A ; HFE(min) = 40 ; HFE(max) = 160 ; @ Vce/ic = 5V / 500mA ; FT = 10MHz ; PD = 25W
  1949. 2N3771 Mospec - Power Transistors(150w)
  1950. 2N3771 ON Semiconductor - Power Transistors (npn Silicon)
  1951. 2N3771 STMicroelectronics - High Power Npn Silicon Transistor
  1952. 2N3771 Wing Shing - Npn Planar Silicon Transistor(audio Power Amplifier Dc To Dc Converter)
  1953. 2N3771 Boca - High Power Npn Silicon Power Transistors
  1954. 2N3771 Microsemi - Npn High Power Silicon Transistor
  1955. 2N3771P Mospec - IC(A) = 30, VCBO(V) = 50, VCEO(V) = 40, PD(W) = 150, Package = TO-3, HFE(Min/Max) = 15/60, IC/VCE(A/V) = 15/4.0, VCE(SAT)(V) = 2.0, ic / IB(A/mA) = 15/1.5A
  1956. 2N3772 Mospec - POWER TRANSISTORS(150W)
  1957. 2N3772 ON Semiconductor - POWER TRANSISTORS (NPN SILICON)
  1958. 2N3772 STMicroelectronics - HIGH POWER NPN SILICON TRANSISTOR
  1959. 2N3772 Boca - HIGH POWER NPN SILICON POWER TRANSISTORS
  1960. 2N3772 Microsemi - NPN HIGH POWER SILICON TRANSISTOR
  1961. 2N3772 Wing Shing - Npn Planar Silicon Transistor(audio Power Amplifier Dc To Dc Converter)
  1962. 2N3773 Неопределенные - TO-3 Power Package Transistors (NPN)
  1963. 2N3773 Mospec - Power Transistors(16a,140v,150w)
  1964. 2N3773 ON Semiconductor - Complementary Power Transistors
  1965. 2N3773 Wing Shing - Npn Planar Silicon Transistor(audio Power Amplifier Dc To Dc Converter)
  1966. 2N3773 Boca - Complementary Silicon Power Transistors
  1967. 2N3773AR USHA - ic (mA) = 16, VCBO(V) = 160, VCEO(V) = 140
  1968. 2N3774 Solitron -
  1969. 2N3775 Solitron -
  1970. 2N3776 Solitron -
  1971. 2N3777 Solitron -
  1972. 2N3778 Solitron -
  1973. 2N3779 Solitron -
  1974. 2N3780 Solitron -
  1975. 2N3781 Solitron -
  1976. 2N3782 SemeLAB - Bipolar Pnp Device InA Hermetically Sealed To39 Metal Package.
  1977. 2N3782 Solitron -
  1978. 2N3788 Solitron -
  1979. 2N3789 Mospec - Power Transistors(10a,150w)
  1980. 2N3789 Boca - Silicon Pnp Power Transistors
  1981. 2N3789 Solitron -
  1982. 2N3789X SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = 175 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1983. 2N3789XSMD SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = 90 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1984. 2N3790 Boca - SILICON PNP POWER TRANSISTORS
  1985. 2N3790 Solitron -
  1986. 2N3790CECC SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = 90 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1987. 2N3790SMD SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = 90 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1988. 2N3790X SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = 175 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1989. 2N3790XSMD SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = 175 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1990. 2N3791 Boca - SILICON PNP POWER TRANSISTORS
  1991. 2N3791 Microsemi - Pnp High Power Silicon Transistor
  1992. 2N3791 Solitron -
  1993. 2N3791CECC SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1994. 2N3791SMD SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  1995. 2N3792 Mospec - POWER TRANSISTORS(10A,150W)
  1996. 2N3792 Boca - SILICON PNP POWER TRANSISTORS
  1997. 2N3792 Microsemi - PNP HIGH POWER SILICON TRANSISTOR
  1998. 2N3792 SemeLAB - Pnp Silicon Epitaxial Base Power Tansistors
  1999. 2N3792 Solitron -
  2000. 2N3792CECC SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 180 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  2001. 2N3792LPCECC SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 180 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  2002. 2N3792SMD SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 180 ; @ Vce/ic = 2V / 1A ; FT = 4MHz ; PD = 150W
  2003. 2N3798 Semicoa - Chip Type 2C2605 Geometry 0220 Polarity NPN
  2004. 2N3798A Central - Small Signal Transistors
  2005. 2N3799 Semicoa - Chip Type 2C2605 Geometry 0220 Polarity NPN
  2006. 2N3799 SemeLAB - Pnp, Low Noise Amplifier Transistor
  2007. 2N3799A Central - Small Signal Transistors
  2008. 2N3799X SemeLAB - Pnp, Low Noise Amplifier Transistor
  2009. 2N3800DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 150 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.25W
  2010. 2N3801DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.25W
  2011. 2N3802DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 150 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.25W
  2012. 2N3803DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.25W
  2013. 2N3804ADCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 150 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.26W
  2014. 2N3804DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 150 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.25W
  2015. 2N3805ADCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.25W
  2016. 2N3805DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.25W
  2017. 2N3806 Central - Dual Transistors
  2018. 2N3806DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 150 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.5W
  2019. 2N3807 Central - Dual Transistors
  2020. 2N3807DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.5W
  2021. 2N3808 Central - Dual Transistors
  2022. 2N3808DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 150 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.5W
  2023. 2N3809 Central - Dual Transistors
  2024. 2N3809 Неопределенные - Silicon Dual Differntial Amplifier Transistors
  2025. 2N3809DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.5W
  2026. 2N381 Неопределенные - alloy-junction germanium transistors
  2027. 2N3810 Semicoa - Chip Type 2C2605 Geometry 0220 Polarity NPN
  2028. 2N3810 Central - Dual Transistors
  2029. 2N3810 Microsemi - Pnp Silicon Dual Transistor
  2030. 2N3810 Semicoa - Type 2n3810 Geometry 0220 Polarity Pnp
  2031. 2N3810A Central - Dual Transistors
  2032. 2N3810A Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2033. 2N3810DCSM SemeLAB - Dual High Gain Pnp Transistors InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  2034. 2N3810J Semicoa - Package = TO-78 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 450 ; VCE(sat) (V) = 0.20
  2035. 2N3810JS Semicoa - Package = TO-78 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 450 ; VCE(sat) (V) = 0.20
  2036. 2N3810JV Semicoa - Package = TO-78 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 450 ; VCE(sat) (V) = 0.20
  2037. 2N3810JX Semicoa - Package = TO-78 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 450 ; VCE(sat) (V) = 0.20
  2038. 2N3810L Microsemi - PNP SILICON DUAL TRANSISTOR
  2039. 2N3810LJ Semicoa - Package = TO-77 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 450 ; VCE(sat) (V) = 0.20
  2040. 2N3810LJS Semicoa - Package = TO-77 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 450 ; VCE(sat) (V) = 0.20
  2041. 2N3810LJV Semicoa - Package = TO-77 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 450 ; VCE(sat) (V) = 0.20
  2042. 2N3810LJX Semicoa - Package = TO-77 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 450 ; VCE(sat) (V) = 0.20
  2043. 2N3810U Microsemi - PNP SILICON DUAL TRANSISTOR
  2044. 2N3810XDCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.5W
  2045. 2N3811 Semicoa - Chip Type 2C2605 Geometry 0220 Polarity NPN
  2046. 2N3811 Central - Dual Transistors
  2047. 2N3811 Microsemi - PNP SILICON DUAL TRANSISTOR
  2048. 2N3811 Semicoa - Type 2n3811 Geometry 0220 Polarity Pnp
  2049. 2N3811A Central - Dual Transistors
  2050. 2N3811A Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2051. 2N3811ADCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.5W
  2052. 2N3811DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.5W
  2053. 2N3811J Semicoa - Package = TO-78 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 900 ; VCE(sat) (V) = 0.20
  2054. 2N3811JS Semicoa - Package = TO-78 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 900 ; VCE(sat) (V) = 0.20
  2055. 2N3811JV Semicoa - Package = TO-78 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 900 ; VCE(sat) (V) = 0.20
  2056. 2N3811JX Semicoa - Package = TO-78 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 900 ; VCE(sat) (V) = 0.20
  2057. 2N3811L Microsemi - PNP SILICON DUAL TRANSISTOR
  2058. 2N3811LJ Semicoa - Package = TO-77 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 900 ; VCE(sat) (V) = 0.20
  2059. 2N3811LJS Semicoa - Package = TO-77 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 900 ; VCE(sat) (V) = 0.20
  2060. 2N3811LJV Semicoa - Package = TO-77 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 900 ; VCE(sat) (V) = 0.20
  2061. 2N3811LJX Semicoa - Package = TO-77 ; Level = Jans ; Vceo (V) = 60 ; Vcbo (V) = 60 ; Vebo (V) = 5 ; Ic (A) = 0.05 ; (Power W) ta = 0.6 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 900 ; VCE(sat) (V) = 0.20
  2062. 2N3811U Microsemi - PNP SILICON DUAL TRANSISTOR
  2063. 2N3811XDCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 100MHz ; PD = 0.5W
  2064. 2N3814SJAN Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  2065. 2N3814SJANTX Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  2066. 2N3814SJANTXV Microsemi - NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
  2067. 2N3819 Fairchild - SFET RF,VHF, UHF, Amplitiers
  2068. 2N3819 Philips - N-channel J-fet
  2069. 2N3819 ON Semiconductor - Jeet Vhf/uhf Amplifier N-channel-depletion
  2070. 2N3819 Vishay - N-channel Jfet
  2071. 2N3819 Неопределенные - N-channel Jfets
  2072. 2N3819 Solitron - Low Power Field Effect Transistor, Casestyle (TO-) = 72, Geometry = FN...
  2073. 2N382 Неопределенные - alloy-junction germanium transistors
  2074. 2N3820 Central - Junction FETs Low Frequency/ Low Noise
  2075. 2N3820 Fairchild - P-channel General Purpose Amplifier
  2076. 2N3820 Solitron - Low Power Field Effect Transistor, Case Style = TO92, Geometry = FP5.3...
  2077. 2N3821 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2078. 2N3821 Microsemi - Technical Data
  2079. 2N3821 Solitron - Low Power Field Effect Transistor, Casestyle (TO-) = 72, Geometry = FN...
  2080. 2N3821 InterFET - N-channel Silicon Junction Field-effect Transistor
  2081. 2N3822 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2082. 2N3822 Microsemi - TECHNICAL DATA
  2083. 2N3822 Solitron - Low Power Field Effect Transistor, Casestyle (TO-) = 72, Geometry = FN...
  2084. 2N3822 InterFET - N-Channel Silicon Junction Field-Effect Transistor
  2085. 2N3823 Microsemi - TECHNICAL DATA
  2086. 2N3823 Micro Electronics - N-channel Junction Field Effect Transistor
  2087. 2N3823 Неопределенные - N-channel Jfets
  2088. 2N3823 Solitron - Low Power Field Effect Transistor, Casestyle (TO-) = 72, Geometry = FN...
  2089. 2N3824 Неопределенные - N-Channel JFETs
  2090. 2N3824 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN3.6...
  2091. 2N3829 Central - Small Signal Transistors
  2092. 2N383 Неопределенные - alloy-junction germanium transistors
  2093. 2N3830 Central - Small Signal Transistors
  2094. 2N3830L SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 50V ; IC(cont) = 1.2A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 1V / 500mA ; FT = 200MHz ; PD = 1W
  2095. 2N3831 SemeLAB - Bipolar NPN Device
  2096. 2N3831 Central - Small Signal Transistors
  2097. 2N3838 Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2098. 2N3838 Microsemi - Npn/pnp Silicon Complementary Small Signal Dual
  2099. 2N3839 Central - Small Signal NPN Transistors / Dual Transistors
  2100. 2N3846 Microsemi - Npn Power Silicon Transistor
  2101. 2N3846 Solitron -
  2102. 2N3847 Microsemi - NPN POWER SILICON TRANSISTOR
  2103. 2N3847 Solitron -
  2104. 2N3848 Solitron -
  2105. 2N3849 Solitron -
  2106. 2N3850 Solitron -
  2107. 2N3858 General Semiconductor - Silicon Transistors
  2108. 2N3858-60 General Semiconductor - SILICON TRANSISTORS
  2109. 2N3858A General Semiconductor - SILICON TRANSISTORS
  2110. 2N3859A Central - Small Signal Transistors
  2111. 2N3859A General Semiconductor - SILICON TRANSISTORS
  2112. 2N3859A Fairchild - Npn General Purpose Amplifier
  2113. 2N3860 Central - Small Signal Transistors
  2114. 2N3866 Semicoa - Chip Type 2C3866A Geometry 1007 Polarity NPN
  2115. 2N3866 Central - Small Signal Transistors
  2116. 2N3866 Philips - Silicon Planar Epitaxial Overlay Transistors
  2117. 2N3866 Microsemi - Rf & Microwave Discrete Low Power Transistors
  2118. 2N3866 ASI - Npn Silicon High Frequency Transistor
  2119. 2N3866A Semicoa - Chip Type 2C3866A Geometry 1007 Polarity NPN
  2120. 2N3866A Microsemi - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
  2121. 2N3866A Semicoa - Type 2n3866a Geometry 1007 Polarity Npn
  2122. 2N3866AF Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 3.5 ; Ic (A) = 0.40 ; Power (W) ta = 1 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  2123. 2N3866AJ Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 3.5 ; Ic (A) = 0.40 ; Power (W) ta = 1 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  2124. 2N3866AJS Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 3.5 ; Ic (A) = 0.40 ; Power (W) ta = 1 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  2125. 2N3866AJV Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 3.5 ; Ic (A) = 0.40 ; Power (W) ta = 1 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  2126. 2N3866AJX Semicoa - Package = TO-39 ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 3.5 ; Ic (A) = 0.40 ; Power (W) ta = 1 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  2127. 2N3866AUB Semicoa - Chip Type 2C3866A Geometry 1007 Polarity NPN
  2128. 2N3866AUBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 3.5 ; Ic (A) = 0.40 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  2129. 2N3866AUBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 3.5 ; Ic (A) = 0.40 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  2130. 2N3866UB Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 30 ; Vcbo (V) = 60 ; Vebo (V) = 3.5 ; Ic (A) = 0.40 ; Power (W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 200 ; VCE(sat) (V) = 1.00
  2131. 2N3867 Central - Small Signal Transistors
  2132. 2N3867 Microsemi - Silicon Pnp Power Transistors
  2133. 2N3867S Microsemi - Silicon PNP Power Transistors
  2134. 2N3867SMD SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = SMD1 (TO276AB) ; Vceo = 40V ; IC(cont) = 1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 3V / 2.5A ; FT = 80MHz ; PD = 1W
  2135. 2N3867SMD05 SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = SMD0.5 (TO276AA) ; Vceo = 40V ; IC(cont) = 1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 3V / 2.5A ; FT = 80MHz ; PD = 1W
  2136. 2N3868 SunLED - silicon transistors UHF/VHF power transistors
  2137. 2N3868 Central - Small Signal Transistors
  2138. 2N3868 Microsemi - Silicon Pnp Power Transistors
  2139. 2N3868S Microsemi - Silicon PNP Power Transistors
  2140. 2N3868SMD SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 1A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 3V / 2.5A ; FT = 60MHz ; PD = 1W
  2141. 2N3868SMD05 SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = SMD0.5 (TO276AA) ; Vceo = 60V ; IC(cont) = 1A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 3V / 2.5A ; FT = 60MHz ; PD = 1W
  2142. 2N3870 Motorola - Silicon Controlled Rectifiers(reverse Blocking Triode Thyristors)
  2143. 2N3871 Motorola - Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
  2144. 2N3872 Motorola - Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
  2145. 2N3873 Motorola - Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
  2146. 2N3878 Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2147. 2N3878 General Semiconductor - High Speed Epitaxial Collector Silicon Npn Planar Transistors
  2148. 2N3878 Solitron -
  2149. 2N3879 General Semiconductor - HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS
  2150. 2N3879 Microsemi - Npn Power Silicon Transistor
  2151. 2N3879 Solitron -
  2152. 2N3879SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 75V ; IC(cont) = 7A ; HFE(min) = 12 ; HFE(max) = 100 ; @ Vce/ic = 2V / 4A ; FT = 40MHz ; PD = 35W
  2153. 2N3879SMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 75V ; IC(cont) = 7A ; HFE(min) = 12 ; HFE(max) = 100 ; @ Vce/ic = 2V / 4A ; FT = 40MHz ; PD = 20W
  2154. 2N388 Неопределенные - alloy-junction germanium transistors
  2155. 2N3884 Powerex - Phase Control Scr 175 Amoeres Average 1200 Volts
  2156. 2N3884-2N3895 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2157. 2N3885 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2158. 2N3886 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2159. 2N3887 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2160. 2N3888 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2161. 2N3889 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2162. 2N388A Неопределенные - alloy-junction germanium transistors
  2163. 2N3890 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2164. 2N3891 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2165. 2N3892 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2166. 2N3893 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2167. 2N3894 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2168. 2N3895 Powerex - Phase Control SCR 175 Amoeres Average 1200 Volts
  2169. 2N3896 Motorola - Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
  2170. 2N3897 Motorola - Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
  2171. 2N3898 Motorola - Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
  2172. 2N3899 Motorola - Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
  2173. 2N3902 Boca - High Voltage Npn Silicon Transistors
  2174. 2N3902 Solitron -
  2175. 2N3903 Central - Small Signal Transistors
  2176. 2N3903 ON Semiconductor - General Purpose Transistors(npn Silicon)
  2177. 2N3903 Samsung - Npn Epitaxial Silicon Transistor
  2178. 2N3903 Semtech - Npn Silicon Expitaxial Planar Transistor For Switching and Amplifier Applications
  2179. 2N3903 Fairchild - Npn General Purpose Amplifier
  2180. 2N3903 Micro Electronics - Npn Silicon Planar Epitaxial Transistors
  2181. 2N3903 Diotec - Si-epitaxial Planartransistors
  2182. 2N3903RLRM ON Semiconductor - General Purpose Transistors(NPN Silicon)
  2183. 2N3904 Неопределенные - Mini size of Discrete semiconductor elements
  2184. 2N3904 Rohm - NPN General Purpose Transistor
  2185. 2N3904 Central - Small Signal Transistors
  2186. 2N3904 ON Semiconductor - General Purpose Transistors(NPN Silicon)
  2187. 2N3904 Semtech - NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications
  2188. 2N3904 Micro Electronics - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  2189. 2N3904 Diotec - Si-Epitaxial PlanarTransistors
  2190. 2N3904 Philips - Npn Switching Transistor
  2191. 2N3904 Transys - Npn Simall Signal Transistor
  2192. 2N3904 SemeLAB - General Purpose Npn Transistor For High Reliability Applications
  2193. 2N3904 Fairchild - Npn General Purpose Amplifier
  2194. 2N3904 General Semiconductor - Small Signal Transistors Npn
  2195. 2N3904 KEC - Epitaxial Planar Npn Transistor (general Purpose, Switching)
  2196. 2N3904 MCC - Npn General Purpose Amplifier
  2197. 2N3904 AUK - Npn Silicon Transistor (general Small Signal Application)
  2198. 2N3904 Weitron - NPN General Purpose Transistors
  2199. 2N3904 KEC - Switching Transistor, Package = TO-92
  2200. 2N3904AMO Philips - NPN Switching Transistor; Package: SOT54 (SPT, E-1)
  2201. 2N3904-AP STMicroelectronics - Small Signal NPN Transistor
  2202. 2N3904C KEC - Epitaxial Planar Npn Transistor (general Purpose, Switching)
  2203. 2N3904C KEC - Switching Transistor, Package = TO-92
  2204. 2N3904CSM SemeLAB - General Purpose Npn Transistor InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  2205. 2N3904DCSM SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.2A ; HFE(min) = 100 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 300MHz ; PD = 0.31W
  2206. 2N3904N AUK - Npn Silicon Transistor
  2207. 2N3904RA Fairchild - NPN General Purpose Amplifier
  2208. 2N3904RL1 ON Semiconductor - General Purpose Transistors(NPN Silicon)
  2209. 2N3904RLRA ON Semiconductor - General Purpose Transistors(NPN Silicon)
  2210. 2N3904RLRE ON Semiconductor - General Purpose Transistors(NPN Silicon)
  2211. 2N3904RLRM ON Semiconductor - General Purpose Transistors(NPN Silicon)
  2212. 2N3904RLRP ON Semiconductor - General Purpose Transistors(NPN Silicon)
  2213. 2N3904RM Fairchild - NPN General Purpose Amplifier
  2214. 2N3904RP Fairchild - NPN General Purpose Amplifier
  2215. 2N3904S KEC - Epitaxial Planar Npn Transistor (general Purpose, Switching)
  2216. 2N3904S KEC - Switching Transistor, Package = SOT-23
  2217. 2N3904-T18 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 40V ; IC(cont) = 0.2A ; HFE(min) = 100 ; HFE(max) = - ; @ Vce/ic = 10V / 1mA ; FT = 300MHz ; PD = 0.31W
  2218. 2N3904U KEC - Epitaxial Planar Npn Transistor (general Purpose, Switching)
  2219. 2N3904U KEC - Switching Transistor, Package = Usm
  2220. 2N3904ZL1 ON Semiconductor - General Purpose Transistors(NPN Silicon)
  2221. 2N3905 Fairchild - PNP General Purpose Amplifier
  2222. 2N3905 Central - Small Signal Transistors
  2223. 2N3905 ON Semiconductor - General Purpose Transistors(pnp Silicon)
  2224. 2N3905 Samsung - Pnp Epitaxial Silicon Transistor
  2225. 2N3905 Semtech - Npn Silicon Expitaxial Planar Transistor For Switching and Amplifier Applications
  2226. 2N3905 Micro Electronics - Pnp Silicon Planar Epitaxial Transistors
  2227. 2N3905 Diotec - Si-epitaxial Planartransistors
  2228. 2N3905RA Fairchild - PNP General Purpose Amplifier
  2229. 2N3906 Неопределенные - Mini size of Discrete semiconductor elements
  2230. 2N3906 Rohm - PNP General Purpose Transistor
  2231. 2N3906 Central - Small Signal Transistors
  2232. 2N3906 ON Semiconductor - General Purpose Transistors(PNP Silicon)
  2233. 2N3906 Semtech - NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications
  2234. 2N3906 Micro Electronics - PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  2235. 2N3906 Diotec - Si-Epitaxial PlanarTransistors
  2236. 2N3906 Philips - Pnp Switching Transistor
  2237. 2N3906 Transys - Pnp Small Signal Transistor
  2238. 2N3906 Fairchild - Pnp General Purpose Amplifier
  2239. 2N3906 General Semiconductor - Small Signal Transistors Pnp
  2240. 2N3906 KEC - Epitaxial Planar Pnp Transistor (general Purpose, Switching)
  2241. 2N3906 MCC - Pnp General Purpose Amplifier
  2242. 2N3906 AUK - Pnp Silicon Transistor (general Small Signal Application Switching Application)
  2243. 2N3906 Weitron - PNP General Purpose Transistors
  2244. 2N3906 ON Semiconductor - General Purpose Transistors
  2245. 2N3906 KEC - Switching Transistor, Package = TO-92
  2246. 2N3906-AP STMicroelectronics - Small Signal PNP Transistor
  2247. 2N3906C KEC - Epitaxial Planar Pnp Transistor (general Purpose, Switching)
  2248. 2N3906C KEC - Switching Transistor, Package = TO-92
  2249. 2N3906N AUK - Pnp Silicon Transistor
  2250. 2N3906RA Fairchild - PNP General Purpose Amplifier
  2251. 2N3906RL1 ON Semiconductor - General Purpose Transistors
  2252. 2N3906RLRA ON Semiconductor - General Purpose Transistors
  2253. 2N3906RLRE ON Semiconductor - General Purpose Transistors
  2254. 2N3906RLRM ON Semiconductor - General Purpose Transistors
  2255. 2N3906RLRP ON Semiconductor - General Purpose Transistors
  2256. 2N3906RM Fairchild - PNP General Purpose Amplifier
  2257. 2N3906RP Fairchild - PNP General Purpose Amplifier
  2258. 2N3906S KEC - Epitaxial Planar Pnp Transistor (general Purpose, Switching)
  2259. 2N3906S KEC - Switching Transistor, Package = SOT-23
  2260. 2N3906U KEC - Epitaxial Planar Pnp Transistor (general Purpose, Switching)
  2261. 2N3906U KEC - Switching Transistor, Package = Usm
  2262. 2N3906ZL1 ON Semiconductor - General Purpose Transistors
  2263. 2N3907 Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2264. 2N3908 Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2265. 2N3909 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3...
  2266. 2N3909A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3...
  2267. 2N3917 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 40V ; IC(cont) = 2A ; HFE(min) = 30 ; HFE(max) = 120 ; @ Vce/ic = 4V / 1A ; FT = 50MHz ; PD = 20W
  2268. 2N3917 Solitron -
  2269. 2N3918 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
  2270. 2N3918 Solitron -
  2271. 2N3919 SemeLAB - Bipolar Npn Device InA Hermetically Sealed To3 Metal Package
  2272. 2N3920 Неопределенные - Collector Current = 10 Amps Npn Types
  2273. 2N3920A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = DMN11...
  2274. 2N3921 Calogic - MONOLITHIC DUAL N-CHANNEL JFET HENERAL PURPOSE AMPLIFIER
  2275. 2N3921 Solitron - Low Power Field Effect Transistor, Case Style = TO71, Geometry = FN5.5...
  2276. 2N3922 Calogic - MONOLITHIC DUAL N-CHANNEL JFET HENERAL PURPOSE AMPLIFIER
  2277. 2N3922 Solitron - Low Power Field Effect Transistor, Case Style = TO71, Geometry = FN3.6...
  2278. 2N3923 Central - Small Signal Transistors
  2279. 2N3924 SunLED - silicon transistors UHF/VHF power transistors
  2280. 2N3926 SunLED - silicon transistors UHF/VHF power transistors
  2281. 2N3927 SunLED - silicon transistors UHF/VHF power transistors
  2282. 2N3931 SemeLAB - Bipolar Pnp Device InA Hermetically Sealed To39 Metal Package
  2283. 2N3945 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
  2284. 2N3945 Central - Small Signal Transistors
  2285. 2N3946 Central - Small Signal Transistors
  2286. 2N3946 Fairchild - Npn Small Signal General Purpose Amplifier & Switch
  2287. 2N3947 Central - Small Signal Transistors
  2288. 2N394A Неопределенные - alloy-junction germanium transistors
  2289. 2N395 Неопределенные - alloy-junction germanium transistors
  2290. 2N3954 InterFET - N-channel Dual Silicon Junction Field-effect Transistor
  2291. 2N3954 Solitron - Low Power Field Effect Transistor, Case Style = TO71, Geometry = FN22....
  2292. 2N3954A Solitron - Low Power Field Effect Transistor, Case Style = TO-71, Geometry = FN22...
  2293. 2N3955 InterFET - N-Channel Dual Silicon Junction Field-Effect Transistor
  2294. 2N3955 Solitron - Low Power Field Effect Transistor, Case Style = TO71, Geometry = FN22....
  2295. 2N3955A Solitron - Low Power Field Effect Transistor, Case Style = TO71, Geometry = FN22....
  2296. 2N3956 InterFET - N-Channel Dual Silicon Junction Field-Effect Transistor
  2297. 2N3956 Solitron - Low Power Field Effect Transistor, Case Style = TO71, Geometry = FN22....
  2298. 2N3957 InterFET - N-channel Dual Silicon Junction Field-effect Transistor
  2299. 2N3957 Solitron - Low Power Field Effect Transistor, Case Style = TO71, Geometry = FN22....
  2300. 2N3958 InterFET - N-Channel Dual Silicon Junction Field-Effect Transistor
  2301. 2N3958 Vishay - Monolithic N-Channel JFET Dual
  2302. 2N3958 Solitron - Low Power Field Effect Transistor, Case Style = TO71, Geometry = FN22....
  2303. 2N3958 Vishay - Monolithic N-Channel JFET Dual
  2304. 2N396 Неопределенные - alloy-junction germanium transistors
  2305. 2N3960 Semicoa - Chip Type 2C3960 Geometry 0003 Polarity NPN
  2306. 2N3960 Central - MU4893
  2307. 2N3960 Semicoa - Type 2n3960 Geometry 0003 Polarity Npn
  2308. 2N3960J Semicoa - Package = TO-18 ; Level = Jantxv ; Vceo (V) = 12 ; Vcbo (V) = 20 ; Vebo (V) = 4.5 ; Ic (A) = 0.05 ; Power (W) ta = 0.4 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  2309. 2N3960JV Semicoa - Package = TO-18 ; Level = Jantxv ; Vceo (V) = 12 ; Vcbo (V) = 20 ; Vebo (V) = 4.5 ; Ic (A) = 0.05 ; Power (W) ta = 0.4 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  2310. 2N3960JX Semicoa - Package = TO-18 ; Level = Jantxv ; Vceo (V) = 12 ; Vcbo (V) = 20 ; Vebo (V) = 4.5 ; Ic (A) = 0.05 ; Power (W) ta = 0.4 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  2311. 2N3960UB Semicoa - Chip Type 2C3960 Geometry 0003 Polarity NPN
  2312. 2N3960UBJ Semicoa - Package = Cersot ; Level = Jantxv ; Vceo (V) = 12 ; Vcbo (V) = 20 ; Vebo (V) = 4.5 ; Ic (A) = 0.05 ; Power (W) ta = 0.4 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  2313. 2N3960UBJX Semicoa - Package = Cersot ; Level = Jantxv ; Vceo (V) = 12 ; Vcbo (V) = 20 ; Vebo (V) = 4.5 ; Ic (A) = 0.05 ; Power (W) ta = 0.4 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.20
  2314. 2N3962 Central - Small Signal Transistors
  2315. 2N3962 Micro Electronics - Pnp Silicon Transistor
  2316. 2N3962CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 0.2A ; HFE(min) = 100 ; HFE(max) = 450 ; @ Vce/ic = 5V / 1mA ; FT = 40MHz ; PD = 0.36W
  2317. 2N3963 Central - Small Signal Transistors
  2318. 2N3963CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 80V ; IC(cont) = 0.2A ; HFE(min) = 100 ; HFE(max) = 450 ; @ Vce/ic = 5V / 1mA ; FT = 40MHz ; PD = 0.36W
  2319. 2N3964 Central - Small Signal Transistors
  2320. 2N3964CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 45V ; IC(cont) = 0.2A ; HFE(min) = 250 ; HFE(max) = 600 ; @ Vce/ic = 5V / 1mA ; FT = 40MHz ; PD = 0.36W
  2321. 2N3964DCSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.2A ; HFE(min) = 250 ; HFE(max) = 600 ; @ Vce/ic = 5V / 1mA ; FT = 40MHz ; PD = 0.36W
  2322. 2N3965 Central - Small Signal Transistors
  2323. 2N3965 Micro Electronics - PNP SILICON TRANSISTOR
  2324. 2N3965CSM SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 45V ; IC(cont) = 0.2A ; HFE(min) = 250 ; HFE(max) = 600 ; @ Vce/ic = 5V / 1mA ; FT = 40MHz ; PD = 0.36W
  2325. 2N3966 Неопределенные - N-Channel JFETs
  2326. 2N3966 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN2.5...
  2327. 2N3967 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2328. 2N3967 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN2.5...
  2329. 2N3967A InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2330. 2N3967A Solitron - Low Power Field Effect Transistor, Case Style = TO-72, Geometry = FN2....
  2331. 2N3968 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2332. 2N3968 Solitron - Low Power Field Effect Transistor, Case Style = TO-72, Geometry = FN2....
  2333. 2N3968A InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2334. 2N3968A Solitron - Low Power Field Effect Transistor, Case Style = TO-72, Geometry = FN2....
  2335. 2N3969 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2336. 2N3969 Solitron - Low Power Field Effect Transistor, Case Style = TO-72, Geometry = FN2....
  2337. 2N3969A InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2338. 2N3969A Solitron - Low Power Field Effect Transistor, Case Style = TO-72, Geometry = FN2....
  2339. 2N396A Неопределенные - alloy-junction germanium transistors
  2340. 2N397 Неопределенные - alloy-junction germanium transistors
  2341. 2N3970 Неопределенные - N-Channel JFETs
  2342. 2N3970 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2343. 2N3971 Неопределенные - N-Channel JFETs
  2344. 2N3971 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2345. 2N3971 Неопределенные - N-Channel JFETs
  2346. 2N3972 Неопределенные - N-Channel JFETs
  2347. 2N3972 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2348. 2N398 Неопределенные - alloy-junction germanium transistors
  2349. 2N3980 Motorola - Silicon Annular PN Unijunction Transister
  2350. 2N398A Неопределенные - alloy-junction germanium transistors
  2351. 2n398b Central -
  2352. 2N3993 InterFET - P-channel Silicon Junction Field-effect Transistor
  2353. 2N3993 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP7.3...
  2354. 2N3993A InterFET - P-Channel Silicon Junction Field-Effect Transistor
  2355. 2N3993A Solitron - Low Power Field Effect Transistor, Case Style (TO-) = 72, Geometry = F...
  2356. 2N3994 InterFET - P-channel Silicon Junction Field-effect Transistor
  2357. 2N3994 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP7.3...
  2358. 2N3994A InterFET - P-Channel Silicon Junction Field-Effect Transistor
  2359. 2N3994A Solitron - Low Power Field Effect Transistor, Case Style (TO-) = 72, Geometry = F...
  2360. 2N3996 SSDI - 5 Amp High Speed Npn Transistor 100 Volts
  2361. 2N3996 Microsemi - Npn Power Switching Silicon Transistor
  2362. 2N3996 Solitron -
  2363. 2N3996J Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.25
  2364. 2N3996JV Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.25
  2365. 2N3996JX Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.25
  2366. 2N3996SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 30W
  2367. 2N3996SMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 20W
  2368. 2N3997 SSDI - 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS
  2369. 2N3997 Microsemi - NPN POWER SWITCHING SILICON TRANSISTOR
  2370. 2N3997 Solitron -
  2371. 2N3997J Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 240 ; VCE(sat) (V) = 0.25
  2372. 2N3997JV Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 240 ; VCE(sat) (V) = 0.25
  2373. 2N3997JX Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 240 ; VCE(sat) (V) = 0.25
  2374. 2N3997SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 80 ; HFE(max) = 240 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 30W
  2375. 2N3997SMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 80 ; HFE(max) = 240 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 20W
  2376. 2N3998 Semicoa - Chip Type 2C5154 Geometry 9201 Polarity NPN
  2377. 2N3998 Microsemi - NPN POWER SWITCHING SILICON TRANSISTOR
  2378. 2N3998 Solitron -
  2379. 2N3998J Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.25
  2380. 2N3998JV Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.25
  2381. 2N3998JX Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.25
  2382. 2N3998SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 30W
  2383. 2N3998SMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 20W
  2384. 2N3999 Semicoa - Chip Type 2C5154 Geometry 9201 Polarity NPN
  2385. 2N3999 Microsemi - NPN POWER SWITCHING SILICON TRANSISTOR
  2386. 2N3999 Solitron -
  2387. 2N3999J Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 240 ; VCE(sat) (V) = 0.25
  2388. 2N3999JV Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 240 ; VCE(sat) (V) = 0.25
  2389. 2N3999JX Semicoa - Package = ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 8.0 ; Ic (A) = 5.00 ; Power (W) ta = 2 ; Rtja (C/W) = ; Tstg/top (C) = -65 to +200 ; Hfe = 240 ; VCE(sat) (V) = 0.25
  2390. 2N3999SMD SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 80 ; HFE(max) = 240 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 30W
  2391. 2N3999SMD05 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 80 ; HFE(max) = 240 ; @ Vce/ic = 2V / 1A ; FT = 40MHz ; PD = 20W
  2392. 2N4000 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
  2393. 2N4000 Central - Small Signal Transistors
  2394. 2N4000 Solitron - Planar Power Transistors 1 Amp NPN, Vceo (V) = 80, Hfe Min/max = 30/12...
  2395. 2N4001 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO39 Metal Package.
  2396. 2N4001 Central - Small Signal Transistors
  2397. 2N4001 Solitron - Planar Power Transistors 1 Amp NPN, Vceo (V) = 100, Hfe Min/max = 40/1...
  2398. 2N4001L SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 100V ; IC(cont) = 1A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 500mA ; FT = 40MHz ; PD = 1W
  2399. 2N4002 Solitron -
  2400. 2N4003 Solitron -
  2401. 2N4012 SunLED - silicon transistors UHF/VHF power transistors
  2402. 2N4013 Central - Small Signal Transistors
  2403. 2N4014 Central - Small Signal Transistors
  2404. 2N4014 STMicroelectronics - High-voltage, High Current Switch
  2405. 2N4015 Central - Dual Transistors
  2406. 2N4015 Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2407. 2N4016 Central - Dual Transistors
  2408. 2N4016 Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2409. 2N4021 Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2410. 2N4023 Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2411. 2N4026 Central - Small Signal Transistors
  2412. 2N4027 SemeLAB - Bipolar PNP Device inA Hermetically sealed TO18 Metal Package
  2413. 2N4027 Central - Small Signal Transistors
  2414. 2N4028 SemeLAB - Bipolar PNP Device inA Hermetically sealed TO18 Metal Package.
  2415. 2N4028 Central - Small Signal Transistors
  2416. 2N4029 Central - Small Signal Transistors
  2417. 2N4029 Semicoa - Type 2n4029 Geometry 6700 Polarity Pnp
  2418. 2N4029 Micro Electronics - Pnp Silicon Transistor
  2419. 2N4029J Semicoa - Package = TO-18 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 80 ; Vebo (V) = 5 ; Ic (A) = 1.00 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.15
  2420. 2N4029JV Semicoa - Package = TO-18 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 80 ; Vebo (V) = 5 ; Ic (A) = 1.00 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.15
  2421. 2N4030 Micro Electronics - Pnp Silicon Af Medium Power Amplifiers & Switches
  2422. 2N4030 Central - Small Signal Transistors
  2423. 2N4031 Central - Small Signal Transistors
  2424. 2N4032 Central - Small Signal Transistors
  2425. 2N4032 Boca - General Purpose Transistor (pnp Silicon)
  2426. 2N4033 Semicoa - Type 2N4033 Geometry 6700 Polarity PNP
  2427. 2N4033 Central - Small Signal Transistors
  2428. 2N4033 Boca - GENERAL PURPOSE TRANSISTOR (PNP SILICON)
  2429. 2N4033 STMicroelectronics - General Purpose Amplifier and Switch
  2430. 2N4033 SemeLAB - High Speed Medium Voltage Switch
  2431. 2N4033 Siemens - Pnp Silicon Planar Transistor
  2432. 2N4033 Microsemi - Pnp Bipolar Transistor
  2433. 2N4033CSM4 SemeLAB - High Speed Pnp Medium Voltage Transistor InA Ceramic Surface Mount Package
  2434. 2N4033J Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 80 ; Vebo (V) = 5 ; Ic (A) = 1.00 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.15
  2435. 2N4033JV Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 80 ; Vebo (V) = 5 ; Ic (A) = 1.00 ; (Power W) ta = 0.8 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.15
  2436. 2N4033UB Semicoa - Package = Cersot ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 80 ; Vebo (V) = 5 ; Ic (A) = 1.00 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.15
  2437. 2N4033UBJ Semicoa - Package = Cersot ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 80 ; Vebo (V) = 5 ; Ic (A) = 1.00 ; (Power W) ta = 0.5 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 300 ; VCE(sat) (V) = 0.15
  2438. 2N4034 Central - Small Signal Transistors
  2439. 2N4035 Central - Small Signal Transistors
  2440. 2N4036 Micro Electronics - COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
  2441. 2N4036 Central - Small Signal Transistors
  2442. 2N4036 Motorola - Case 79.04, Style 1 To-39 (to-205ad)
  2443. 2N4036 Philips - Pnp Switching Transistor
  2444. 2N4036 STMicroelectronics - Medium-speed Switch
  2445. 2N4036 Boca - Pnp Silicon Planar Transistor
  2446. 2N4036 Solitron -
  2447. 2N4037 Micro Electronics - COMPLEMENTARY SILICON TRANSISTORS
  2448. 2N4037 Central - Small Signal Transistors
  2449. 2N4037 Motorola - CASE 79.04, STYLE 1 TO-39 (TO-205AD)
  2450. 2N404 Неопределенные - alloy-junction germanium transistors
  2451. 2N4040 SunLED - silicon transistors UHF/VHF power transistors
  2452. 2N4041 SunLED - silicon transistors UHF/VHF power transistors
  2453. 2N4046 Central - Small Signal Transistors
  2454. 2N4047 Central - Small Signal Transistors
  2455. 2N404A Неопределенные - alloy-junction germanium transistors
  2456. 2N4058 Central - Small Signal Transistors
  2457. 2N4058 Micro Electronics - NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
  2458. 2N4059 Micro Electronics - NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
  2459. 2N4060 Micro Electronics - NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
  2460. 2N4061 Micro Electronics - NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
  2461. 2N4062 Micro Electronics - NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
  2462. 2N4068 Central - Small Signal Transistors
  2463. 2N4070 Неопределенные - COLLECTOR CURRENT = 10 AMPS NPN TYPES
  2464. 2N4070 Solitron -
  2465. 2N4071 Неопределенные - COLLECTOR CURRENT = 10 AMPS NPN TYPES
  2466. 2N4071 Solitron -
  2467. 2N4084 Solitron - Low Power Field Effect Transistor, Case Style = TO71, Geometry = FN5.5...
  2468. 2N4085 Solitron - Low Power Field Effect Transistor, Case Style = TO71, Geometry = FN5.5...
  2469. 2N4091 Неопределенные - N-Channel JFETs
  2470. 2N4091 Microsemi - N-channel J-fet Qualified Per Mil-prf-19500/431
  2471. 2N4091 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2472. 2N4092 Неопределенные - N-Channel JFETs
  2473. 2N4092 Microsemi - N-CHANNEL J-FET Qualified per MIL-PRF-19500/431
  2474. 2N4092 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2475. 2N4093 Неопределенные - N-Channel JFETs
  2476. 2N4093 Microsemi - N-CHANNEL J-FET Qualified per MIL-PRF-19500/431
  2477. 2N4093 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2478. 2N4100 Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2479. 2N4101 General Semiconductor - 5-A SILICON CONTROLLED RECTIFIERS
  2480. 2N4103 General Semiconductor - 12.5A SILICON CONTROLLED RECTIFIERS
  2481. 2N4103 Central - SILICON CONTROLLED RECTIFIER 16AMPS 220 THRU 800 VOLTS JEDEC TO-3 CASE
  2482. 2N4104 SemeLAB - Bipolar Npn Device
  2483. 2N4111 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 5V / 2A ; FT = 50MHz ; PD = 30W
  2484. 2N4111 Solitron -
  2485. 2N4112 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO3 Metal Package.
  2486. 2N4112 Solitron -
  2487. 2N4113 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
  2488. 2N4113 Solitron -
  2489. 2N4114 SemeLAB - Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
  2490. 2N4115 Solitron -
  2491. 2N4116 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN2.5...
  2492. 2N4117 Calogic - N-channel Jfet General Purpose Amplifier
  2493. 2N4117 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN2.2...
  2494. 2N4117A Calogic - N-Channel JFET General Purpose Amplifier
  2495. 2N4117A Linear IS - Ultra-high Input Impedance N-channel Jfet
  2496. 2N4117A Vishay - N-channel Jfets
  2497. 2N4117A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN2.2...
  2498. 2N4118 Calogic - N-Channel JFET General Purpose Amplifier
  2499. 2N4118 Linear IS - ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
  2500. 2N4118 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN2.2...
  2501. 2N4118A Calogic - N-Channel JFET General Purpose Amplifier
  2502. 2N4118A Linear IS - ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
  2503. 2N4118A Vishay - N-Channel JFETs
  2504. 2N4118A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN2.2...
  2505. 2N4119 Calogic - N-Channel JFET General Purpose Amplifier
  2506. 2N4119 Linear IS - ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
  2507. 2N4119 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN2.2...
  2508. 2N4119A Calogic - N-Channel JFET General Purpose Amplifier
  2509. 2N4119A Linear IS - ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
  2510. 2N4119A Vishay - N-Channel JFETs
  2511. 2N4119A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN2.2...
  2512. 2N4123 Central - Small Signal Transistors
  2513. 2N4123 ON Semiconductor - General Purpose Transistors(npn Silicon)
  2514. 2N4123 Samsung - Npn Epitaxial Silicon Transistor
  2515. 2N4123 Fairchild - Npn General Purpose Amplifier
  2516. 2N4123 MCC - Npn Silicon General Purpose Transistor 625mw
  2517. 2N4123 Micro Electronics - Npn Silicon Planar Epitaxial Transistor
  2518. 2N4123RLRA ON Semiconductor - General Purpose Transistor Npn, Package: TO-92 (TO-226), Pins=3
  2519. 2N4123RLRM ON Semiconductor - General Purpose Transistors, Package: TO-92 (TO-226), Pins=3
  2520. 2N4124 Неопределенные - Mini size of Discrete semiconductor elements
  2521. 2N4124 Central - Small Signal Transistors
  2522. 2N4124 ON Semiconductor - General Purpose Transistors(NPN Silicon)
  2523. 2N4124 MCC - NPN Silicon General Purpose Transistor 625mW
  2524. 2N4124 Micro Electronics - NPN SILICON PLANAR EPITAXIAL TRANSISTOR
  2525. 2N4124 Philips - Npn General Purpose Transistor
  2526. 2N4124 Transys - Npn Small Signal Transistor
  2527. 2N4124 Samsung - Npn Epitaxial Silicon Transistor
  2528. 2N4124 Fairchild - Npn General Purpose Amplifier
  2529. 2N4124 General Semiconductor - Small Signal Transistors (npn)
  2530. 2N4124RA Fairchild - NPN General Purpose Amplifier
  2531. 2N4125 Central - Small Signal Transistors
  2532. 2N4125 Samsung - Pnp Epitaxial Silicon Transistor
  2533. 2N4125 Fairchild - Pnp General Purpose Amplifier
  2534. 2N4125RA Fairchild - PNP General Purpose Amplifier
  2535. 2N4126 Неопределенные - Mini size of Discrete semiconductor elements
  2536. 2N4126 Central - Small Signal Transistors
  2537. 2N4126 Transys - Pnp Small Signal Transistor
  2538. 2N4126 Samsung - Pnp Epitaxial Silicon Transistor
  2539. 2N4126 Fairchild - Pnp General Purpose Amplifier
  2540. 2N4126 General Semiconductor - Small Signal Transistors (pnp)
  2541. 2N4126 Philips - Pnp General Purpose Transistor
  2542. 2N4126RA Fairchild - PNP General Purpose Amplifier
  2543. 2N4127 SunLED - silicon transistors UHF/VHF power transistors
  2544. 2N4128 SunLED - silicon transistors UHF/VHF power transistors
  2545. 2N413 Неопределенные - alloy-junction germanium transistors
  2546. 2N4137 Central - Small Signal Transistors
  2547. 2N4139 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN2.5...
  2548. 2N414 Неопределенные - alloy-junction germanium transistors
  2549. 2N4150 Semicoa - Chip Type 2C5154 Geometry 9201 Polarity NPN
  2550. 2N4150 Неопределенные - COLLECTOR CURRENT = 10 AMPS NPN TYPES
  2551. 2N4150 Microsemi - Npn Power Silicon Transistor
  2552. 2N4150 Solitron -
  2553. 2N4150 Semicoa - Type 2n4150 Geometry 9201 Polarity Npn
  2554. 2N4150J Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 10.0 ; Ic (A) = 10.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.60
  2555. 2N4150JV Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 10.0 ; Ic (A) = 10.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.60
  2556. 2N4150JX Semicoa - Package = TO-5 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 10.0 ; Ic (A) = 10.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.60
  2557. 2N4150S Semicoa - Chip Type 2C5154 Geometry 9201 Polarity NPN
  2558. 2N4150S Microsemi - NPN POWER SILICON TRANSISTOR
  2559. 2N4150S Semicoa - Type 2n4150s Geometry 9201 Polarity Npn
  2560. 2N4150SJ Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 10.0 ; Ic (A) = 10.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.60
  2561. 2N4150SJV Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 10.0 ; Ic (A) = 10.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.60
  2562. 2N4150SJX Semicoa - Package = TO-39 ; Level = Jantxv ; Vceo (V) = 80 ; Vcbo (V) = 100 ; Vebo (V) = 10.0 ; Ic (A) = 10.00 ; Power (W) ta = 1 ; Rtja (C/W) = 175 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.60
  2563. 2N4167 Central - SCRs
  2564. 2N4168 Central - SCRs
  2565. 2N4168 Motorola - Silicon Controlled Rectifiers
  2566. 2N4169 Central - SCRs
  2567. 2N4169 Motorola - SILICON CONTROLLED RECTIFIERS
  2568. 2N4170 Central - SCRs
  2569. 2N4170 Motorola - SILICON CONTROLLED RECTIFIERS
  2570. 2N4171 Central - SCRs
  2571. 2N4172 Central - SCRs
  2572. 2N4172 Motorola - SILICON CONTROLLED RECTIFIERS
  2573. 2N4173 Central - SCRs
  2574. 2N4174 Central - SCRs
  2575. 2N4174 Motorola - SILICON CONTROLLED RECTIFIERS
  2576. 2N4184 Motorola - SILICON CONTROLLED RECTIFIERS
  2577. 2N4185 Motorola - SILICON CONTROLLED RECTIFIERS
  2578. 2N4186 Motorola - SILICON CONTROLLED RECTIFIERS
  2579. 2N4188 Motorola - SILICON CONTROLLED RECTIFIERS
  2580. 2N4190 Motorola - SILICON CONTROLLED RECTIFIERS
  2581. 2N4199 Motorola - Silicon Controlled Rectifiers
  2582. 2N4200 Motorola - SILICON CONTROLLED RECTIFIERS
  2583. 2N4201 Motorola - SILICON CONTROLLED RECTIFIERS
  2584. 2N4202 Motorola - SILICON CONTROLLED RECTIFIERS
  2585. 2N4203 Motorola - SILICON CONTROLLED RECTIFIERS
  2586. 2N4204 Motorola - SILICON CONTROLLED RECTIFIERS
  2587. 2N4207 Central - Small Signal Transistors
  2588. 2N4208 Central - Small Signal Transistors
  2589. 2N4208 General Semiconductor - Pnp Silicon Transistor
  2590. 2N4209 Central - Small Signal Transistors
  2591. 2N4209 General Semiconductor - PNP SILICON TRANSISTOR
  2592. 2N4210 Solitron -
  2593. 2N4211 Solitron -
  2594. 2N4213 Motorola - Silicon Controlled Rectifiers
  2595. 2N4214 Motorola - SILICON CONTROLLED RECTIFIERS
  2596. 2N4216 Motorola - SILICON CONTROLLED RECTIFIERS
  2597. 2N4219 Motorola - SILICON CONTROLLED RECTIFIERS
  2598. 2N4220 Central - Junction FETs Low Frequency/ Low Noise
  2599. 2N4220 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2600. 2N4220 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN22....
  2601. 2N4220 InterFET - N-channel Silicon Junction Field-effect Transistor
  2602. 2N4220A InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2603. 2N4220A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN22....
  2604. 2N4220A InterFET - N-Channel Silicon Junction Field-Effect Transistor
  2605. 2N4221 Central - Junction FETs Low Frequency/ Low Noise
  2606. 2N4221 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2607. 2N4221 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN5.5...
  2608. 2N4221 InterFET - N-Channel Silicon Junction Field-Effect Transistor
  2609. 2N4221A InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2610. 2N4221A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN3.6...
  2611. 2N4221A InterFET - N-Channel Silicon Junction Field-Effect Transistor
  2612. 2N4222 Central - Junction FETs Low Frequency/ Low Noise
  2613. 2N4222 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2614. 2N4222 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN5.5...
  2615. 2N4222 InterFET - N-Channel Silicon Junction Field-Effect Transistor
  2616. 2N4222A InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2617. 2N4222A Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN3.6...
  2618. 2N4222A InterFET - N-Channel Silicon Junction Field-Effect Transistor
  2619. 2N4223 Неопределенные - N-Channel JFETs
  2620. 2N4223 Intersil - N-channel Jfet High Frequency Amplifier
  2621. 2N4223 Solitron - Low Power Field Effect Transistor, Casestyle (TO-) = 72, Geometry = FN...
  2622. 2N4224 Неопределенные - N-Channel JFETs
  2623. 2N4224 Intersil - N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER
  2624. 2N4224 Solitron - Low Power Field Effect Transistor, Casestyle (TO-) = 72, Geometry = FN...
  2625. 2N4231 Central - Power Transistors
  2626. 2N4231 Boca - Complementary Silicon Medium-power Transistors
  2627. 2N4231 SemeLAB - Bipolar Npn Device InA Hermetically Sealed To66 Metal Package
  2628. 2N4231 Solitron -
  2629. 2N4231A Mospec - POWER TRANSISTORS(5A,75W)
  2630. 2N4231A Central - Power Transistors
  2631. 2N4231A Boca - COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
  2632. 2N4232 Central - Power Transistors
  2633. 2N4232 SemeLAB - Bipolar Npn Device InA Hermetically Sealed To66 Metal Package
  2634. 2N4232 Solitron -
  2635. 2N4232A Mospec - POWER TRANSISTORS(5A,75W)
  2636. 2N4232A Central - Power Transistors
  2637. 2N4232A Boca - COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
  2638. 2N4233 Central - Power Transistors
  2639. 2N4233 Solitron -
  2640. 2N4233A Central - Power Transistors
  2641. 2N4233A Boca - COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
  2642. 2N4233A Solitron -
  2643. 2N4234 Central - Small Signal Transistors
  2644. 2N4234 Boca - General Purpose Transistor (pnp Silicon)
  2645. 2N4234 Micro Electronics - Complementary Silicon Af Medium Power Amplifiers & Switches
  2646. 2N4234 Solitron -
  2647. 2N4235 Central - Small Signal Transistors
  2648. 2N4235 Boca - GENERAL PURPOSE TRANSISTOR (PNP SILICON)
  2649. 2N4235 Micro Electronics - COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
  2650. 2N4235 Solitron -
  2651. 2N4236 Central - Small Signal Transistors
  2652. 2N4236 Boca - GENERAL PURPOSE TRANSISTOR (PNP SILICON)
  2653. 2N4236 Solitron -
  2654. 2N4236X SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 3A ; HFE(min) = 30 ; HFE(max) = 175 ; @ Vce/ic = 1V / 250mA ; FT = 3MHz ; PD = 6W
  2655. 2N4237 Central - Small Signal Transistors
  2656. 2N4237 Micro Electronics - COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
  2657. 2N4237 Boca - General Purpose Transistor (npn Silicon)
  2658. 2N4237 Solitron -
  2659. 2N4238 Central - Small Signal Transistors
  2660. 2N4238 Micro Electronics - COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
  2661. 2N4238 Boca - GENERAL PURPOSE TRANSISTOR (NPN SILICON)
  2662. 2N4238 Solitron -
  2663. 2N4239 Central - Small Signal Transistors
  2664. 2N4239 Boca - GENERAL PURPOSE TRANSISTOR (NPN SILICON)
  2665. 2N4239 Solitron -
  2666. 2N4239X SemeLAB - Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 1A ; HFE(min) = 30 ; HFE(max) = 200 ; @ Vce/ic = 10V / 100mA ; FT = 1MHz ; PD = 0.8W
  2667. 2N4240 Central - Power Transistors
  2668. 2N4240 Mospec - POWER TRANSISTORS(35W)
  2669. 2N4240 Boca - COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
  2670. 2N4240 SemeLAB - Npn Transistor Medium Power High Voltage
  2671. 2N4240 Microsemi - 5 Amp, 500v, High Voltage Npn Silicon Power Transistors
  2672. 2N4240 Solitron -
  2673. 2N4248 Central - Silicon Pnp Transistors Designed For Low Level - Low Nosie Amplifier Applications
  2674. 2N4249 Central - Silicon PNP Transistors designed for low level - low nosie amplifier applications
  2675. 2N4250 Central - Silicon PNP Transistors designed for low level - low nosie amplifier applications
  2676. 2N4250A Central - Silicon PNP Transistors designed for low level - low nosie amplifier applications
  2677. 2n4256 Central -
  2678. 2n4258 Central -
  2679. 2n4258a Central -
  2680. 2N426 Неопределенные - alloy-junction germanium transistors
  2681. 2N4260 Semicoa - Chip Type 2C4261 Geometry 0014 Polarity PNP
  2682. 2N4260UB Semicoa - Chip Type 2C4261 Geometry 0014 Polarity PNP
  2683. 2N4261 Semicoa - Chip Type 2C4261 Geometry 0014 Polarity PNP
  2684. 2N4261 Semicoa - Type 2n4261 Geometry 0014 Polarity Pnp
  2685. 2N4261J Semicoa - Package = TO-72 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 15 ; Vebo (V) = 4.5 ; Ic (A) = 0.03 ; (Power W) ta = 0.2 ; Rtja (C/W) = 860 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.15
  2686. 2N4261JS Semicoa - Package = TO-72 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 15 ; Vebo (V) = 4.5 ; Ic (A) = 0.03 ; (Power W) ta = 0.2 ; Rtja (C/W) = 860 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.15
  2687. 2N4261JV Semicoa - Package = TO-72 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 15 ; Vebo (V) = 4.5 ; Ic (A) = 0.03 ; (Power W) ta = 0.2 ; Rtja (C/W) = 860 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.15
  2688. 2N4261JX Semicoa - Package = TO-72 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 15 ; Vebo (V) = 4.5 ; Ic (A) = 0.03 ; (Power W) ta = 0.2 ; Rtja (C/W) = 860 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.15
  2689. 2N4261UB Semicoa - Chip Type 2C4261 Geometry 0014 Polarity PNP
  2690. 2N4261UBJ Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 15 ; Vebo (V) = 4.5 ; Ic (A) = 0.03 ; (Power W) ta = 0.2 ; Rtja (C/W) = 860 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.15
  2691. 2N4261UBJS Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 15 ; Vebo (V) = 4.5 ; Ic (A) = 0.03 ; (Power W) ta = 0.2 ; Rtja (C/W) = 860 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.15
  2692. 2N4261UBJX Semicoa - Package = Cersot ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 15 ; Vebo (V) = 4.5 ; Ic (A) = 0.03 ; (Power W) ta = 0.2 ; Rtja (C/W) = 860 ; Tstg/top (C) = -65 to +200 ; Hfe = 150 ; VCE(sat) (V) = 0.15
  2693. 2N4264 Central - Small Signal Transistors
  2694. 2N4264 ON Semiconductor - General Purpose Transistor(npn Silicon)
  2695. 2N4269 Central - Small Signal Transistors
  2696. 2N4269S SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 140V ; IC(cont) = 0.03A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic = 10V / 10mA ; FT = - ; PD = 0.36W
  2697. 2N427 Неопределенные - alloy-junction germanium transistors
  2698. 2N4270 Central - Small Signal Transistors
  2699. 2N4271 Central - Small Signal Transistors
  2700. 2N4271 Solitron -
  2701. 2N4272 Central - Small Signal Transistors
  2702. 2N4272 Solitron -
  2703. 2N4272A SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 140V ; IC(cont) = 2.5A ; HFE(min) = 20 ; HFE(max) = 140 ; @ Vce/ic = 10V / 1A ; FT = - ; PD = 5W
  2704. 2N4273 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO66 (TO213AA) ; Vceo = 140V ; IC(cont) = 2.5A ; HFE(min) = 20 ; HFE(max) = 140 ; @ Vce/ic = 10V / 1A ; FT = - ; PD = 25W
  2705. 2N428 Неопределенные - alloy-junction germanium transistors
  2706. 2N4287 Central - Small Signal Transistors
  2707. 2N4289 Central - Small Signal Transistors
  2708. 2N4296 Central - Power Transistors
  2709. 2N4296 Central - Npn Silicon Power Transistor
  2710. 2N4298 Central - Power Transistors
  2711. 2N4298 Central - NPN SILICON POWER TRANSISTOR
  2712. 2N4299 Central - Power Transistors
  2713. 2N4299 Central - NPN SILICON POWER TRANSISTOR
  2714. 2N4300 Central - Small Signal Transistors
  2715. 2N4300 Solitron -
  2716. 2N4301 Неопределенные - COLLECTOR CURRENT = 10 AMPS NPN TYPES
  2717. 2N4301 Solitron -
  2718. 2N4302 Solitron - Low Power Field Effect Transistor, Case Style = TO92, Geometry = FN2.5...
  2719. 2N4303 Solitron - Low Power Field Effect Transistor, Case Style = TO92, Geometry = FN2.5...
  2720. 2N4304 Solitron - Low Power Field Effect Transistor, Case Style = TO-92, Geometry = FN22...
  2721. 2N4305 Solitron - Planar Power Transistors 5 Amp NPN, Vceo (V) = 80, Min/max = 50/150,...
  2722. 2N4307 Solitron - Planar Power Transistors 5 Amp NPN, Vceo (V) = 60, Min/max = 50/150,...
  2723. 2N4309 Solitron -
  2724. 2N4311 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 1A ; FT = - ; PD = 1.5W
  2725. 2N4311 Solitron -
  2726. 2N4314 Central - Small Signal Transistors
  2727. 2N4338 Calogic - N-Channel JFET Low Noise Amplifier
  2728. 2N4338 Central - Junction FETs Low Frequency/ Low Noise
  2729. 2N4338 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2730. 2N4338 Vishay - N-Channel JFETs
  2731. 2N4338 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN22....
  2732. 2N4338-41 Calogic - N-Channel JFET Low Noise Amplifier
  2733. 2N4339 Calogic - N-Channel JFET Low Noise Amplifier
  2734. 2N4339 Central - Junction FETs Low Frequency/ Low Noise
  2735. 2N4339 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2736. 2N4339 Vishay - N-Channel JFETs
  2737. 2N4339 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN22....
  2738. 2N4340 Calogic - N-Channel JFET Low Noise Amplifier
  2739. 2N4340 Central - Junction FETs Low Frequency/ Low Noise
  2740. 2N4340 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2741. 2N4340 Vishay - N-Channel JFETs
  2742. 2N4340 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN22....
  2743. 2N4341 Calogic - N-Channel JFET Low Noise Amplifier
  2744. 2N4341 Central - Junction FETs Low Frequency/ Low Noise
  2745. 2N4341 InterFET - N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
  2746. 2N4341 Vishay - N-Channel JFETs
  2747. 2N4341 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN22....
  2748. 2N4343 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3...
  2749. 2N4347 Неопределенные - TO-3 Power Package Transistors (NPN)
  2750. 2N4347 Mospec - POWER TRANSISTORS
  2751. 2N4347 Boca - HIGH-POWER INDUSTRIAL TRANSISTORS
  2752. 2N4347 Неопределенные - COLLECTOR CURRENT = 10 AMPS NPN TYPES
  2753. 2N4348 Неопределенные - COLLECTOR CURRENT = 10 AMPS NPN TYPES
  2754. 2N4348 Неопределенные - High Voltage, High Current Power Transistors
  2755. 2N4351 Calogic - N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
  2756. 2N4351 Linear IS - N-channel Mosfet Enhancement Mode
  2757. 2N4352 Calogic - P-Channel Enhancement Mode MOSFET Amplifier/Switch
  2758. 2N4352 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FMP1....
  2759. 2N4353 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FMPZ1...
  2760. 2n4354 Central -
  2761. 2n4355 Central -
  2762. 2n4356 Central -
  2763. 2N4358 Central - Small Signal Transistors
  2764. 2N4359 Central - Small Signal Transistors
  2765. 2N4360 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3...
  2766. 2N4361 Powerex - Phase Control Scr 70 Amoeres Average(110 Rms) 1400 Volts
  2767. 2N4361-2N4371 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2768. 2N4362 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2769. 2N4363 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2770. 2N4364 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2771. 2N4365 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2772. 2N4366 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2773. 2N4367 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2774. 2N4368 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2775. 2N4371 Microsemi - Silicon Controlled Rectifier
  2776. 2N4371 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2777. 2N4372 Microsemi - Silicon Controlled Rectifier
  2778. 2N4372 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2779. 2N4373 Microsemi - Silicon Controlled Rectifier
  2780. 2N4373 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2781. 2N4374 Microsemi - Silicon Controlled Rectifier
  2782. 2N4374 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2783. 2N4375 Microsemi - Silicon Controlled Rectifier
  2784. 2N4375 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2785. 2N4376 Microsemi - Silicon Controlled Rectifier
  2786. 2N4376 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2787. 2N4377 Microsemi - Silicon Controlled Rectifier
  2788. 2N4377 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2789. 2N4378 Powerex - Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts
  2790. 2N4381 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP5.3...
  2791. 2N4382 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP5.3...
  2792. 2N4384 Central - Small Signal Transistors
  2793. 2N4386 Central - Small Signal Transistors
  2794. 2N4387 Solitron -
  2795. 2N4388 Solitron -
  2796. 2N4390 Central - Small Signal Transistors
  2797. 2N4391 Неопределенные - N-Channel JFETs
  2798. 2N4391 SemeLAB - Jfet Switching N Channel- Depletion
  2799. 2N4391 Calogic - N-channel Jfet Switch
  2800. 2N4391 Linear IS - Single N-channel Jfet Switch
  2801. 2N4391 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2802. 2N4392 Неопределенные - N-Channel JFETs
  2803. 2N4392 Calogic - N-Channel JFET Switch
  2804. 2N4392 Linear IS - SINGLE N-CHANNEL JFET SWITCH
  2805. 2N4392 SemeLAB - Jfet Switching N Channel- Depletion
  2806. 2N4392 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2807. 2N4392CSM SemeLAB - Small Signal N.channel J.fet InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  2808. 2N4393 Неопределенные - N-Channel JFETs
  2809. 2N4393 Calogic - N-Channel JFET Switch
  2810. 2N4393 Linear IS - SINGLE N-CHANNEL JFET SWITCH
  2811. 2N4393 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2812. 2N4393CSM SemeLAB - Small Signal N.channel J.fet InA Hermetically Sealed Ceramic Surface Mount Package For High Reliability Applications
  2813. 2N4395 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 40V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 170 ; @ Vce/ic = 1V / 2A ; FT = 4MHz ; PD = 62W
  2814. 2N4395 Solitron -
  2815. 2N4396 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 170 ; @ Vce/ic = 1V / 2A ; FT = 4MHz ; PD = 62W
  2816. 2N4396 Solitron -
  2817. 2N4397 SemeLAB - Screening Options Available = ; Polarity = NPN ; Package = TO72 (TO206AF) ; Vceo = 40V ; IC(cont) = - ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 10V / 2mA ; FT = 600MHz ; PD = 0.2W
  2818. 2N4398 Mospec - Power Transistors(200w)
  2819. 2N4398 Boca - Pnp Silicon High-power Transistors
  2820. 2N4398 Solitron -
  2821. 2N4399 Mospec - POWER TRANSISTORS(200W)
  2822. 2N4399 Boca - PNP SILICON HIGH-POWER TRANSISTORS
  2823. 2N4399 Microsemi - Pnp High Power Silicon Transistor
  2824. 2N4399 Solitron -
  2825. 2N43A Неопределенные - alloy-junction germanium transistors
  2826. 2N4400 Central - Small Signal Transistors
  2827. 2N4400 ON Semiconductor - General Purpose Transistors(npn Silicon)
  2828. 2N4400 Semtech - Npn Expitaxial Silicon Transistor
  2829. 2N4400 Fairchild - Npn General Purpose Amplifier
  2830. 2N4400 Micro Electronics - Npn Silicon Planar Epitaxial Transistor
  2831. 2N4400 Diotec - Si-epitaxial Planartransistors
  2832. 2N4400 CDIL - Npn Pnp Silicon Planar Epitaxial Transistors
  2833. 2N4400 Fairchild - Small Signal General Purpose Amplifiers & Switchs
  2834. 2N4400RA Fairchild - NPN General Purpose Amplifier
  2835. 2N4401 Неопределенные - Mini size of Discrete semiconductor elements
  2836. 2N4401 Rohm - NPN Medium Power Transistor
  2837. 2N4401 ON Semiconductor - General Purpose Transistors(NPN Silicon)
  2838. 2N4401 Semtech - NPN EXPITAXIAL SILICON TRANSISTOR
  2839. 2N4401 Micro Electronics - NPN SILICON PLANAR EPITAXIAL TRANSISTOR
  2840. 2N4401 Diotec - Si-Epitaxial PlanarTransistors
  2841. 2N4401 CDIL - NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  2842. 2N4401 Philips - Npn Switching Transistor
  2843. 2N4401 Fairchild - Npn General Purpose Amplifier
  2844. 2N4401 General Semiconductor - Small Signal Transistors Npn
  2845. 2N4401 MCC - Npn General Purpose Amplifier
  2846. 2n4401 Transys - To-92 Plastic-encapsulated Transistors
  2847. 2N4401 Central - Small Signal Transistors To-92 Case (continued)
  2848. 2N4401 ON Semiconductor - General Purpose Transistors
  2849. 2N4401 Rohm - Npn Medium Power Transistor (switching)
  2850. 2N4401 Fairchild - Small Signal General Purpose Amplifiers & Switchs
  2851. 2N4401A3 Cystech - General Purpose Npn Epitaxial Planar Transistor
  2852. 2N4401RA Fairchild - NPN General Purpose Amplifier
  2853. 2N4401RLRA ON Semiconductor - General Purpose Transistors
  2854. 2N4401RLRAG ON Semiconductor - General Purpose Transistors
  2855. 2N4401RLRM ON Semiconductor - General Purpose Transistors
  2856. 2N4401RLRP ON Semiconductor - General Purpose Transistors
  2857. 2N4401RLRPG ON Semiconductor - General Purpose Transistors
  2858. 2N4401RM Fairchild - NPN General Purpose Amplifier
  2859. 2N4401RP Fairchild - NPN General Purpose Amplifier
  2860. 2N4401ZL1 ON Semiconductor - General Purpose Transistors
  2861. 2N4402 CDIL - NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  2862. 2N4402 Central - Small Signal Transistors TO-92 Case (Continued)
  2863. 2N4402 ON Semiconductor - General Purpose Transistors(pnp Silicon)
  2864. 2N4402 Semtech - Pnp Expitaxial Silicon Transistor
  2865. 2N4402 Fairchild - Pnp General Purpose Amplifier
  2866. 2N4402 Micro Electronics - Npn Silicon Planar Epitaxial Transistor
  2867. 2N4402 Diotec - Si-epitaxial Planartransistors
  2868. 2N4403 Неопределенные - Mini size of Discrete semiconductor elements
  2869. 2N4403 Rohm - PNP Medium Power Transistor (Switching)
  2870. 2N4403 CDIL - NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  2871. 2N4403 Central - Small Signal Transistors TO-92 Case (Continued)
  2872. 2N4403 Semtech - PNP EXPITAXIAL SILICON TRANSISTOR
  2873. 2N4403 Micro Electronics - NPN SILICON PLANAR EPITAXIAL TRANSISTOR
  2874. 2N4403 Diotec - Si-Epitaxial PlanarTransistors
  2875. 2N4403 Philips - Pnp Switching Transistor
  2876. 2N4403 Fairchild - Pnp General Purpose Amplifier
  2877. 2N4403 General Semiconductor - Small Signal Transistors (pnp)
  2878. 2N4403 MCC - Pnp General Purpose Amplifier
  2879. 2N4403 ON Semiconductor - General Purpose Transistors
  2880. 2N4403 Vishay - Small Signal Transistor (PNP)
  2881. 2N4403 Weitron - General Purpose Transistors PNP Silicon
  2882. 2N4403 Rohm - Pnp Medium Power Transistor (switching)
  2883. 2N4403A3 Cystech - General Purpose Pnp Epitaxial Planar Transistor
  2884. 2N4403G ON Semiconductor - General Purpose Transistors
  2885. 2N4403RA Fairchild - PNP General Purpose Amplifier
  2886. 2N4403RL ON Semiconductor - General Purpose Transistors
  2887. 2N4403RLRA ON Semiconductor - General Purpose Transistors
  2888. 2N4403RLRAG ON Semiconductor - General Purpose Transistors
  2889. 2N4403RLRE ON Semiconductor - General Purpose Transistors, PNP Silicon, Package: TO-92 (TO-226), Pins=3
  2890. 2N4403RLRM ON Semiconductor - General Purpose Transistors
  2891. 2N4403RLRP ON Semiconductor - General Purpose Transistors
  2892. 2N4403RLRPG ON Semiconductor - General Purpose Transistors
  2893. 2N4403RM Fairchild - PNP General Purpose Amplifier
  2894. 2N4403RP Fairchild - PNP General Purpose Amplifier
  2895. 2N4403ZL1 ON Semiconductor - General Purpose Transistors
  2896. 2N4404 Central - Small Signal Transistors
  2897. 2N4404 Central - Pnp Silicon Transistor
  2898. 2N4405 Central - Small Signal Transistors
  2899. 2N4405 Central - PNP SILICON TRANSISTOR
  2900. 2N4406 Central - Small Signal Transistors
  2901. 2N4406 Central - Pnp Silicon Transistor
  2902. 2N4407 Central - Small Signal Transistors
  2903. 2N4407 Central - PNP SILICON TRANSISTOR
  2904. 2N4410 Central - Small Signal Transistors TO-92 Case (Continued)
  2905. 2N4410 ON Semiconductor - Amplifier Transistor(npn Silicon)
  2906. 2N4410 Fairchild - Npn General Purpose Amplifier
  2907. 2N4410 ON Semiconductor - Amplifier Transistor
  2908. 2N4413A Central - Small Signal Transistors
  2909. 2N4415A Central - Small Signal Transistors
  2910. 2N4416 Fairchild - SFET RF,VHF, UHF, Amplitiers
  2911. 2N4416 Calogic - N-Channel JFET High Frequency Amplifier
  2912. 2N4416 Неопределенные - N-Channel JFETs
  2913. 2N4416 Micro Electronics - N-channel Fet
  2914. 2N4416 Linear IS - N-channel Jfet High Frequency Amplifier
  2915. 2N4416 Solitron - Low Power Field Effect Transistor, Casestyle (TO-) = 72, Geometry = FN...
  2916. 2N4416A Calogic - N-Channel JFET High Frequency Amplifier
  2917. 2N4416A Неопределенные - N-Channel JFETs
  2918. 2N4416A Micro Electronics - N-CHANNEL FET
  2919. 2N4416A Linear IS - N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER
  2920. 2N4416A Microsemi - N-channel J-fet
  2921. 2N4416A Vishay - N-Channel JFETs
  2922. 2N4416A Solitron - Low Power Field Effect Transistor, Casestyle (TO-) = 72, Geometry = FN...
  2923. 2N4417 Solitron - Low Power Field Effect Transistor, Case Style = TO72, Geometry = FN2.5...
  2924. 2N4424 Central - Small Signal Transistors TO-92 Case (Continued)
  2925. 2N4424 Неопределенные - Silicon Transistors
  2926. 2N4425 Central - Small Signal Transistors
  2927. 2N4427 SunLED - silicon transistors UHF/VHF power transistors
  2928. 2N4427 Philips - Silicon planar epitaxial overlay transistors
  2929. 2N4427 Central - Small Signal Transistors
  2930. 2N4427 STMicroelectronics - Vhf Oscillator Power Amplifier
  2931. 2N4427 Microsemi - Rf & Microwave Discrete Low Power Transistors
  2932. 2N4427 ASI - Npn Silicon High Frequency Transistor
  2933. 2N4428 SunLED - silicon transistors UHF/VHF power transistors
  2934. 2N4428 ASI - Npn Silicon High Frequency Transistor
  2935. 2N4429 SunLED - silicon transistors UHF/VHF power transistors
  2936. 2N4429 ASI - Npn Silicon Rf Power Transistor
  2937. 2N4430 SunLED - silicon transistors UHF/VHF power transistors
  2938. 2N4431 SunLED - silicon transistors UHF/VHF power transistors
  2939. 2N4440 SunLED - silicon transistors UHF/VHF power transistors
  2940. 2N4440 Microsemi - Rf & Microwave Transistors Wideband Vhf-uhf Class C
  2941. 2N4441 Motorola - Silicon Controlled Rectifiers
  2942. 2N4442 Motorola - SILICON CONTROLLED RECTIFIERS
  2943. 2N4443 Motorola - SILICON CONTROLLED RECTIFIERS
  2944. 2N4444 Motorola - SILICON CONTROLLED RECTIFIERS
  2945. 2N4445 Solitron - Low Power Field Effect Transistor, Case Style = TO46, Geometry = FN9.1...
  2946. 2N4446 Solitron - Low Power Field Effect Transistor, Case Style = TO46, Geometry = FN9.1...
  2947. 2N4447 Solitron - Low Power Field Effect Transistor, Case Style = TO46, Geometry = FN9.1...
  2948. 2N4448 Solitron - Low Power Field Effect Transistor, Case Style = TO46, Geometry = FN9.1...
  2949. 2N4449 Semicoa - Chip Type 2C2369A Geometry 0005 Polarity NPN
  2950. 2N4449 Microsemi - NPN SILICON SWITCHING TRANSISTOR
  2951. 2N4449 Central - Small Signal Transistors
  2952. 2N4449J Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 40 ; Vebo (V) = 4.5 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  2953. 2N4449JS Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 40 ; Vebo (V) = 4.5 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  2954. 2N4449JV Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 40 ; Vebo (V) = 4.5 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  2955. 2N4449JX Semicoa - Package = TO-46 ; Level = Jans ; Vceo (V) = 15 ; Vcbo (V) = 40 ; Vebo (V) = 4.5 ; Ic (A) = 0.20 ; Power (W) ta = 0.36 ; Rtja (C/W) = 325 ; Tstg/top (C) = -65 to +200 ; Hfe = 120 ; VCE(sat) (V) = 0.20
  2956. 2N4449U Microsemi - NPN SILICON SWITCHING TRANSISTOR
  2957. 2N4449UA Microsemi - NPN SILICON SWITCHING TRANSISTOR
  2958. 2N4449UB Microsemi - NPN SILICON SWITCHING TRANSISTOR
  2959. 2N44A Неопределенные - alloy-junction germanium transistors
  2960. 2n458a Central -
  2961. 2N460 Неопределенные - alloy-junction germanium transistors
  2962. 2N461 Неопределенные - alloy-junction germanium transistors
  2963. 2N464 Неопределенные - alloy-junction germanium transistors
  2964. 2N465 Неопределенные - alloy-junction germanium transistors
  2965. 2N466 Неопределенные - alloy-junction germanium transistors
  2966. 2N467 Неопределенные - alloy-junction germanium transistors
  2967. 2N478 ASI - SILICON TRANSISTORS
  2968. 2N479 ASI - SILICON TRANSISTORS
  2969. 2N479A ASI - SILICON TRANSISTORS
  2970. 2N480 ASI - SILICON TRANSISTORS
  2971. 2N480A ASI - SILICON TRANSISTORS
  2972. 2N4851 Central - MU4893
  2973. 2N4852 Central - MU4893
  2974. 2N4853 Central - MU4893
  2975. 2N4854 Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2976. 2N4854 Microsemi - NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL
  2977. 2N4854 Central - Dual Transistors
  2978. 2N4854U Microsemi - NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL
  2979. 2N4854U OPTEK - Surface Mount Npn/pnp Complementary Transistors
  2980. 2N4855 Неопределенные - SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
  2981. 2N4856 Неопределенные - N-Channel JFETs
  2982. 2N4856 Motorola - Jfet Switching N-channel-depletion
  2983. 2N4856 Microsemi - N-channel J-fet
  2984. 2N4856 InterFET - N-Channel Silicon Junction Field-Effect Transistor
  2985. 2N4856 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2986. 2N4856A Неопределенные - N-Channel JFETs
  2987. 2N4856A Motorola - JFET SWITCHING N-CHANNEL-DEPLETION
  2988. 2N4856A Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2989. 2N4856JAN Vishay - N-channel Jfets
  2990. 2N4856JANTX Vishay - N-Channel JFETs
  2991. 2N4856JANTXV Vishay - N-Channel JFETs
  2992. 2N4857 Неопределенные - N-Channel JFETs
  2993. 2N4857 Motorola - JFET SWITCHING N-CHANNEL-DEPLETION
  2994. 2N4857 Microsemi - N-CHANNEL J-FET
  2995. 2N4857 InterFET - N-Channel Silicon Junction Field-Effect Transistor
  2996. 2N4857 Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  2997. 2N4857A Неопределенные - N-Channel JFETs
  2998. 2N4857A Motorola - JFET SWITCHING N-CHANNEL-DEPLETION
  2999. 2N4857A Solitron - Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN7.1...
  3000. 2N4857JAN Vishay - N-Channel JFETs
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