BH616UV8010AIG55 (BSI) - The BH616UV8010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC., 8 Mb

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BH616UV8010AIG55 (BSI)

Electronic component documentation (datasheet) «BH616UV8010AIG55» (8 Mb), manufacturer BSI. Download datasheet file:

Datasheet BH616UV8010AIG55 manufacturer BSI

Partname	BH616UV8010AIG55
Description	The BH616UV8010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
Functional	8 Mb
Manufacturer	Brilliance Semiconductor
Site	www.brilliancesemi.com

Size	Pages: 0, 159.05Kb
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In this file

BH616UV8010AI-55, BH616UV8010AIG55, BH616UV8010DI-55, BH616UV8010TI-55

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