GS78132B-10 - 10ns 256K X 32 8Mb Asynchronous SRAM
GS78132B-10I - 10ns 256K X 32 8Mb Asynchronous SRAM
GS78132B-12 - 12ns 256K X 32 8Mb Asynchronous SRAM
GS78132B-12I - 12ns 256K X 32 8Mb Asynchronous SRAM
GS78132B-15 - 15ns 256K X 32 8Mb Asynchronous SRAM
GS78132B-15I - 15ns 256K X 32 8Mb Asynchronous SRAM
GS815018 - 18Mb Register-to-Register Late Write SRAMsGS815018/36A are 18,874,368-bit (18Mb) high performance SRAMs. This family of wide, low voltage HSTL I/O SRAMs is designed to operate at the speeds needed to implement economical high performance cache systems.
GS8150V18 - 18Mb Register-to-Register Late Write SRAMsBecause GS8150V18/36A are synchronous devices, addressdata inputs and read/write control inputs are captured on therising edge of the input clock. Write cycles are internally selftimedand initiated by the rising edge of the clock input. Thisfeature eliminates complex off-chip write pulse generationrequired by asynchronous SRAMs and simplifies input signaltiming.
GS8150V36A - 18Mb Register-to-Register Late Write SRAMsBecause GS8150V18/36A are synchronous devices, addressdata inputs and read/write control inputs are captured on therising edge of the input clock. Write cycles are internally selftimedand initiated by the rising edge of the clock input. Thisfeature eliminates complex off-chip write pulse generationrequired by asynchronous SRAMs and simplifies input signaltiming.
GS816018B - 18Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect (GS816018/32/36B). Dual Cycle Deselect (GS8160E18/32/36B). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS816032B - 18Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect (GS816018/32/36B). Dual Cycle Deselect (GS8160E18/32/36B). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS816036B - 18Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect (GS816018/32/36B). Dual Cycle Deselect (GS8160E18/32/36B). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS8160E18B - 18Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect (GS816018/32/36B). Dual Cycle Deselect (GS8160E18/32/36B). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS8160E18T-133 - 8.5ns 133MHz 1M X 18 Synchronous Burst SRAM
GS8160E18T-133I - 8.5ns 133MHz 1M X 18 Synchronous Burst SRAM
GS8160E18T-150 - 7.5ns 150MHz 1M X 18 Synchronous Burst SRAM
GS8160E18T-150I - 7.5ns 150MHz 1M X 18 Synchronous Burst SRAM
GS8160E18T-166 - 7ns 166MHz 1M X 18 Synchronous Burst SRAM
GS8160E18T-166I - 75ns 166MHz 1M X 18 Synchronous Burst SRAM
GS8160E18T-200 - 6.5ns 200MHz 1M X 18 Synchronous Burst SRAM
GS8160E18T-200I - 6.5ns 200MHz 1M X 18 Synchronous Burst SRAM
GS8160E18T-225 - 6ns 225MHz 1M X 18 Synchronous Burst SRAM
GS8160E36B - 18Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect (GS816018/32/36B). Dual Cycle Deselect (GS8160E18/32/36B). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS8160E36T-133 - 8.5ns 133MHz 512K X 36 Synchronous Burst SRAM
GS8160E36T-133I - 8.5ns 133MHz 512K X 36 Synchronous Burst SRAM
GS8160E36T-150 - 7.5ns 150MHz 512K X 36 Synchronous Burst SRAM
GS8160E36T-150I - 7.5ns 150MHz 512K X 36 Synchronous Burst SRAM
GS8160E36T-166 - 7ns 166MHz 512K X 36 Synchronous Burst SRAM
GS8160E36T-166I - 7ns 166MHz 512K X 36 Synchronous Burst SRAM
GS8160E36T-200 - 6.5ns 200MHz 512K X 36 Synchronous Burst SRAM
GS8160E36T-200I - 6.5ns 200MHz 512K X 36 Synchronous Burst SRAM
GS8160E36T-225 - 5.5ns 225MHz 512K X 36 Synchronous Burst SRAM
GS8160E36T-225I - 6ns 225MHz 512K X 36 Synchronous Burst SRAM
GS8160E36T-250 - 5.5ns 250MHz 512K X 36 Synchronous Burst SRAM
GS8160E36T-250I - 5.5ns 250MHz 512K X 36 Synchronous Burst SRAM
GS8160F18B - 18Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect (GS816018/32/36B). Dual Cycle Deselect (GS8160E18/32/36B). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS8160F18T-5.5 - 5.5ns 1M X 18 18MB Synchronous Burst SRAM
GS8160F32B - 18Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect (GS816018/32/36B). Dual Cycle Deselect (GS8160E18/32/36B). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS8160F32T-5.5 - 5.5ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F32T-5.5I - 5.5ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F32T-6 - 6ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F32T-6.5 - 6.5ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F32T-6.5I - 6.5ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F32T-6I - 6ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F32T-7 - 7ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F32T-7.5 - 7.5ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F32T-7.5I - 7.5ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F32T-7I - 7ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F32T-8.5 - 8.5ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F32T-8.5I - 8.5ns 512K X 32 18MB Synchronous Burst SRAM
GS8160F36B - 18Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect (GS816018/32/36B). Dual Cycle Deselect (GS8160E18/32/36B). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS8160F36T-5.5 - 5.5ns 512K X 36 18MB Synchronous Burst SRAM
GS8160F36T-5.5I - 5.5ns 512K X 36 18MB Synchronous Burst SRAM
GS8160F36T-6 - 6ns 512K X 36 18MB Synchronous Burst SRAM
GS8160F36T-6.5 - 6.5ns 512K X 36 18MB Synchronous Burst SRAM
GS8160F36T-6.5I - 6.5ns 512K X 36 18MB Synchronous Burst SRAM
GS8160F36T-6I - 6ns 512K X 36 18MB Synchronous Burst SRAM
GS8160F36T-7 - 7ns 512K X 36 18MB Synchronous Burst SRAM
GS8160F36T-7.5 - 7.5ns 512K X 36 18MB Synchronous Burst SRAM
GS8160F36T-7.5I - 7.5ns 512K X 36 18MB Synchronous Burst SRAM
GS8160F36T-7I - 7ns 512K X 36 18MB Synchronous Burst SRAM
GS8160F36T-8.5 - 8.5ns 512K X 36 18MB Synchronous Burst SRAM
GS8160F36T-8.5I - 8.5ns 512K X 36 18MB Synchronous Burst SRAM
GS8160V18C - 18Mb Burst SRAMs The GS8160V18/36CT is an 18,874,368-bit (16,777,216-bitfor x32 version) high performance synchronous SRAM with a2-bit burst address counter. Although ofA type originallydeveloped for Level 2 Cache applications supporting highperformance CPUs, the device now finds application insynchronous SRAM applications, ranging from DSP mainstore to networking chip set support.
GS8160V36C - 18Mb Burst SRAMs The GS8160V18/36CT is an 18,874,368-bit (16,777,216-bitfor x32 version) high performance synchronous SRAM with a2-bit burst address counter. Although ofA type originallydeveloped for Level 2 Cache applications supporting highperformance CPUs, the device now finds application insynchronous SRAM applications, ranging from DSP mainstore to networking chip set support.
GS8160Z18 - 16mb Pipelined and Flowthrough Synchronous NBT SRAM