GS8342Q08 - 36Mb Separate I/OSigmaQuad-II SRAMsThe GS8662Q08/09/18/36E are built in compliance with the SigmaQuad-II SRAM pinout standard for Separate I/O synchronous SRAMs. They are 75,497,472-bit (72Mb) SRAMs. The GS8662D08/18/36E SigmaQuad SRAMs are just one element inA family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
GS8342Q09 - 36Mb Separate I/OSigmaQuad-II SRAMsThe GS8662Q08/09/18/36E are built in compliance with the SigmaQuad-II SRAM pinout standard for Separate I/O synchronous SRAMs. They are 75,497,472-bit (72Mb) SRAMs. The GS8662D08/18/36E SigmaQuad SRAMs are just one element inA family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
GS8342Q18 - 36Mb Separate I/OSigmaQuad-II SRAMsThe GS8662Q08/09/18/36E are built in compliance with the SigmaQuad-II SRAM pinout standard for Separate I/O synchronous SRAMs. They are 75,497,472-bit (72Mb) SRAMs. The GS8662D08/18/36E SigmaQuad SRAMs are just one element inA family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
GS8342Q36 - 36Mb Separate I/OSigmaQuad-II SRAMsThe GS8662Q08/09/18/36E are built in compliance with the SigmaQuad-II SRAM pinout standard for Separate I/O synchronous SRAMs. They are 75,497,472-bit (72Mb) SRAMs. The GS8662D08/18/36E SigmaQuad SRAMs are just one element inA family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
GS8342S08 - GS8342S08/09/18/36 are built in compliance with the SigmaSIO-II SRAM pinout standard for Separate I/O synchronous SRAMs. They are 37,748,736-bit (36Mb) SRAMs. These are the first inA family of wide, very low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
GS8342S09 - GS8342S08/09/18/36 are built in compliance with the SigmaSIO-II SRAM pinout standard for Separate I/O synchronous SRAMs. They are 37,748,736-bit (36Mb) SRAMs. These are the first inA family of wide, very low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
GS8342S18 - GS8342S08/09/18/36 are built in compliance with the SigmaSIO-II SRAM pinout standard for Separate I/O synchronous SRAMs. They are 37,748,736-bit (36Mb) SRAMs. These are the first inA family of wide, very low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
GS8342S39 - GS8342S08/09/18/36 are built in compliance with the SigmaSIO-II SRAM pinout standard for Separate I/O synchronous SRAMs. They are 37,748,736-bit (36Mb) SRAMs. These are the first inA family of wide, very low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
GS842Z36AB-100 - 100MHz 12ns 256K X 36 4Mb Pipelined and Flow Through Synchronous NBT SRAM
GS842Z36AB-100I - 100MHz 12ns 256K X 36 4Mb Pipelined and Flow Through Synchronous NBT SRAM
GS842Z36AB-150 - 150MHz 10ns 256K X 36 4Mb Pipelined and Flow Through Synchronous NBT SRAM
GS842Z36AB-150I - 150MHz 10ns 256K X 36 4Mb Pipelined and Flow Through Synchronous NBT SRAM
GS842Z36AB-166 - 166MHz 8.5ns 256K X 36 4Mb Pipelined and Flow Through Synchronous NBT SRAM
GS842Z36AB-166I - 166MHz 8.5ns 256K X 36 4Mb Pipelined and Flow Through Synchronous NBT SRAM
GS842Z36AB-180 - 180MHz 8ns 256K X 36 4Mb Pipelined and Flow Through Synchronous NBT SRAM
GS842Z36AB-180I - 180MHz 8ns 256K X 36 4Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640(E)18 - 72Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect operation (GS864018/32/36). Dual Cycle Deselect operation (GS8640E18/32/36). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply. LBO pin for Linear or Interleaved Burst mode. Internal input resistors on mode pins allow floating mode pins. Byte Write (BW) and/or Global Write (GW) operation. Internal self-timed write cycle. Automatic
GS864018 - 72Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect operation (GS864018/32/36). Dual Cycle Deselect operation (GS8640E18/32/36). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply. LBO pin for Linear or Interleaved Burst mode. Internal input resistors on mode pins allow floating mode pins. Byte Write (BW) and/or Global Write (GW) operation. Internal self-timed write cycle. Automatic
GS864032 - 72Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect operation (GS864018/32/36). Dual Cycle Deselect operation (GS8640E18/32/36). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply. LBO pin for Linear or Interleaved Burst mode. Internal input resistors on mode pins allow floating mode pins. Byte Write (BW) and/or Global Write (GW) operation. Internal self-timed write cycle. Automatic
GS864036 - 72Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect operation (GS864018/32/36). Dual Cycle Deselect operation (GS8640E18/32/36). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply. LBO pin for Linear or Interleaved Burst mode. Internal input resistors on mode pins allow floating mode pins. Byte Write (BW) and/or Global Write (GW) operation. Internal self-timed write cycle. Automatic
GS8640E36 - 72Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect operation (GS864018/32/36). Dual Cycle Deselect operation (GS8640E18/32/36). ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply. LBO pin for Linear or Interleaved Burst mode. Internal input resistors on mode pins allow floating mode pins. Byte Write (BW) and/or Global Write (GW) operation. Internal self-timed write cycle. Automatic
GS8640EV36 - 72Mb Burst SRAMsFT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect operation (GS8640V18/32/36). Dual Cycle Deselect operation (GS8640EV18/32/36). ZQ mode pin for user-selectable high/low output drive. 1.8V +10%/-10% core power supply
GS8640V18 - 72Mb Burst SRAMsFT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect operation (GS8640V18/32/36). Dual Cycle Deselect operation (GS8640EV18/32/36). ZQ mode pin for user-selectable high/low output drive. 1.8V +10%/-10% core power supply
GS8640V32 - 72Mb Burst SRAMsFT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect operation (GS8640V18/32/36). Dual Cycle Deselect operation (GS8640EV18/32/36). ZQ mode pin for user-selectable high/low output drive. 1.8V +10%/-10% core power supply
GS8640V36 - 72Mb Burst SRAMsFT pin for user-configurable flow through or pipeline operation. Single Cycle Deselect operation (GS8640V18/32/36). Dual Cycle Deselect operation (GS8640EV18/32/36). ZQ mode pin for user-selectable high/low output drive. 1.8V +10%/-10% core power supply
GS8640Z18 - 72Mb NBT SRAMs. User-configurable Pipeline and Flow Through mode. NBT (No Bus Turnaround) functionality allows zero wait read-write-read bus utilization. Fully pin-compatible with pipelined and flow through NtRAM™, NoBL™, and ZBT™ SRAMs. Pin-compatible with 2M, 8M, and 16M devices. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS8640Z36 - 72Mb NBT SRAMs. User-configurable Pipeline and Flow Through mode. NBT (No Bus Turnaround) functionality allows zero wait read-write-read bus utilization. Fully pin-compatible with pipelined and flow through NtRAM™, NoBL™, and ZBT™ SRAMs. Pin-compatible with 2M, 8M, and 16M devices. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS8640ZV18 - 72Mb NBT SRAMs The GS8640ZV18/36T isA 72Mbit Synchronous StaticSRAM. GSI\'s NBT SRAMs, like ZBT, NtRAM, NoBL orother pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available busbandwidth by eliminating the need to insert deselect cycleswhen the device is switched from read to write cycles.
GS8640ZV36 - 72Mb NBT SRAMs The GS8640ZV18/36T isA 72Mbit Synchronous StaticSRAM. GSI\'s NBT SRAMs, like ZBT, NtRAM, NoBL orother pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available busbandwidth by eliminating the need to insert deselect cycleswhen the device is switched from read to write cycles.
GS864218 - 72Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. IEEE 1149.1 JTAG-compatible Boundary Scan. ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS8642272 - 72Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. IEEE 1149.1 JTAG-compatible Boundary Scan. ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS86422V72 - 72Mb Burst SRAMs. FT pin for user-configurable flow through or pipeline operation. IEEE 1149.1 JTAG-compatible Boundary Scan. ZQ mode pin for user-selectable high/low output drive. 1.8V +10%/-10% core power supply. 1.8V I/O supply
GS864236 - 72Mb Burst SRAMs FT pin for user-configurable flow through or pipeline operation. IEEE 1149.1 JTAG-compatible Boundary Scan. ZQ mode pin for user-selectable high/low output drive. 2.5V or 3.3V +10%/-10% core power supply. 2.5V or 3.3V I/O supply
GS8642V18 - 72Mb Burst SRAMs. FT pin for user-configurable flow through or pipeline operation. IEEE 1149.1 JTAG-compatible Boundary Scan. ZQ mode pin for user-selectable high/low output drive. 1.8V +10%/-10% core power supply. 1.8V I/O supply
GS8642V36 - 72Mb Burst SRAMs. FT pin for user-configurable flow through or pipeline operation. IEEE 1149.1 JTAG-compatible Boundary Scan. ZQ mode pin for user-selectable high/low output drive. 1.8V +10%/-10% core power supply. 1.8V I/O supply
GS8642Z18 - 72Mb NBT SRAMsThe GS8642Z18/36/72 isA 72Mbit Synchronous Static SRAM. GSI\'s NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.
GS8642Z36 - 72Mb NBT SRAMsThe GS8642Z18/36/72 isA 72Mbit Synchronous Static SRAM. GSI\'s NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.
GS8642Z72 - 72Mb NBT SRAMsThe GS8642Z18/36/72 isA 72Mbit Synchronous Static SRAM. GSI\'s NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.
GS8642ZV18 - 72Mb NBT SRAMsThe GS8642ZV18/36/72 isA 72Mbit Synchronous Static SRAM. GSI\'s NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.
GS8642ZV36 - 72Mb NBT SRAMsThe GS8642ZV18/36/72 isA 72Mbit Synchronous Static SRAM. GSI\'s NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.
GS8642ZV72 - 72Mb NBT SRAMsThe GS8642ZV18/36/72 isA 72Mbit Synchronous Static SRAM. GSI\'s NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.
GS864418 - 4m X 18, 2m X 36, 1m X 72 72mb S/dcd Sync Burst Srams
GS864418B - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-133 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-133I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-150 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-150I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-166 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-166I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-200 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-200I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-225 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-225I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-250 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418B-250I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-133 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-133I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-150 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-150I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-166 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-166I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-200 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-200I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-225 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-225I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-250 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-250I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-133 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-133I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-150 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-150I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-166 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-166I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-200 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-200I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-225 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-225I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-250 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436B-250I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-133 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-133I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-150 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-150I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-166 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-166I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-200 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-200I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-225 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-225I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-250 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-250I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-133 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-133I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-150 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-150I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-166 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-166I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-200 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-200I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-225 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-225I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-250 - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864472C-250I - 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs