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Electronic components list Hittite, page 1



  1. Hittite Microwave Corporation

    Site: www.hittite.com
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    Manufacturers


    HMC113 - Gaas Mmic 2.5 To 6 Ghz Up - Converter
  2. HMC115 - Gaas Double-balanced 2 To 6 Ghz Mixer
  3. HMC121C8 - Gaas Mmic Smt Voltage-variable Attenuator Dc - 10 Ghz
  4. HMC121G8 - Gaas Mmic Smt Voltage-variable Attenuator Dc - 8 Ghz
  5. HMC128 - Gaas Mmic Double-balanced Mixer, 1.8 - 5.0 Ghz
  6. HMC128G8 - Gaas Mmic Smt Doublebalanced Mixer, 1.8 - 5 Ghz
  7. HMC129 - Gaas Mmic Double-balanced Mixer, 4 - 8 Ghz
  8. HMC129G8 - Gaas Mmic Smt Doublebalanced Mixer, 4 - 8 Ghz
  9. HMC129LC4 - 4 - 8 GHz, 40dB LO/RF Iso, -7dB Conv. Gain, +17dBm IIP3 The HMC129LC4 isA general purpo...
  10. HMC130 - Gaas Mmic Double-balanced Mixer, 6 - 11 Ghz
  11. HMC132C8 - Gaas Mmic Smt High-isolation Spdt Switch Dc - 8 Ghz
  12. HMC132G7 - Gaas Mmic High - Isolation Spdt Switch Dc - 6 Ghz
  13. HMC132P7 - GAAS MMIC HIGH - ISOLATION SPDT SWITCH DC - 6 GHZ
  14. HMC135 - Gaas Mmic Bi-phase Modulator, 1.8 - 5.2 Ghz
  15. HMC136 - Gaas Mmic Bi-phase Modulator, 4 - 8 Ghz
  16. HMC137 - Gaas Mmic Bi-phase Modulator, 6 - 11 Ghz
  17. HMC13MS8 - Gaas Mmic Smt Double Balanced Mixer, 1.5 - 4.5 Ghz
  18. HMC141 - Gaas Mmic Double-balanced Mixer, 6 - 18 Ghz
  19. HMC141C8 - Gaas Mmic Smt Doublebalanced Mixer, 6 - 15 Ghz
  20. HMC141LH5 - 7 - 14 GHz DBL-BAL Mixer, 35dB LO/RF Iso, +20dBm IIP3The HMC141LH5 isA miniature passive doublebalancedmixer housed inA hermetic SMT leadlesspackage that can be used as an upconverter ordownconverter. The device isA passive diode/baluntype mixer with high dynamic range. The mixer canhandle larger signal levels than most active mixersdue to the high third order intercept of 20 dBm. MMICimplementation provides exceptional balance in thecircuit resulting in high LO/RF and LO/IF isolationsand unit-to-unit co
  21. HMC142 - GaAs MMIC DOUBLE-BALANCED MIXER, 6 - 18 GHz
  22. HMC142C8 - Gaas Mmic Smt Doublebalanced Mixer, 6 - 15 Ghz
  23. HMC143 - Gaas Mmic Double-balanced Mixer, 5 - 20 Ghz
  24. HMC144 - GaAs MMIC DOUBLE-BALANCED MIXER, 5 - 20 GHz
  25. HMC144LC4 - DBL-BAL Mixer, 6 - 20 GHz, 30dB LO/RF Iso., +21dBm IIP3
  26. HMC147S8 - Gaas Mmic Smt Double-balanced Mixer 1.6 - 3.4 Ghz
  27. HMC154S8 - Gaas Mmic Smt Low Distortion T/r Switch, Dc - 2.5 Ghz
  28. HMC156 - Gaas Mmic Passive Frequency Doubler, 0.7 - 2.4 Ghz Input
  29. HMC156C8 - Gaas Mmic Smt Passive Frequency Doubler, 0.7 - 2.4 Ghz Input
  30. HMC157C8 - Gaas Mmic Smt Frequency Doubler 1 - 2 Ghz Input
  31. HMC158 - Gaas Mmic Smt Passive Frequency Doubler, 1.3 - 4.0 Ghz Input
  32. HMC158C8 - Gaas Mmic Smt Passive Frequency Doubler, 1.3 - 4.0 Ghz Input
  33. HMC165S14 - Gaas Mmic Sp4t Switch Dc To 2.0 Ghz
  34. HMC168C8 - Gaas Mmic Smt Doublebalanced Mixer, 4.5 - 8 Ghz
  35. HMC170C8 - Gaas Mmic Smt Doublebalanced Mixer, 2.5 - 4 Ghz
  36. HMC171C8 - Gaas Mmic Smt Doublebalanced Mixer, 7 - 10 Ghz
  37. HMC172QS24 - Gaas Mmic Sp6t Switch Dc To 2.5 Ghz
  38. HMC173MS8 - Gaas Mmic Voltage Variable Attenuator 800-2000 Mhz
  39. HMC174MS8 - Gaas Mmic T/r Switch Dc - 3 Ghz
  40. HMC175MS8 - Gaas Mmic Smt Doublebalanced Mixer, 1.7 - 4.5 Ghz
  41. HMC182S14 - Gaas Mmic Sp4t Non-reflective Switch, Dc - 2.0 Ghz
  42. HMC183QS24 - Gaas Mmic Sp8t Non-reflective Switch, Dc - 2.0 Ghz
  43. HMC187MS8 - Gaas Mmic Smt Passive Frequency Doubler, 0.85 - 2.0 Ghz Input
  44. HMC188MS8 - Gaas Mmic Smt Passive Frequency Doubler, 1.25 - 3.0 Ghz Input
  45. HMC189MS8 - Gaas Mmic Smt Passive Frequency Doubler, 2 - 4 Ghz Input
  46. HMC190MS8 - Gaas Mmic Spdt Switch Dc - 3 Ghz
  47. HMC194MS8 - Gaas Mmic Spdt Switch Dc - 3 Ghz
  48. HMC195 - Gaas Mmic Sot26 T/r Switch, Dc - 2.5 Ghz
  49. HMC197 - Gaas Mmic Sot26 Spdt Switch, Dc - 3 Ghz
  50. HMC199MS8 - Dual Spdt Switch Dc - 2.5 Ghz
  51. HMC203 - Gaas Mmic Double-balanced Mixer, 14 - 23 Ghz
  52. HMC204 - Gaas Mmic Passive Frequency Doubler, 4 - 8 Ghz Input
  53. HMC204C8 - Gaas Mmic Smt Passive Frequency Doubler, 4 - 8 Ghz Input
  54. HMC204MS8 - Gaas Mmic Smt Passive Frequency Doubler, 4 - 8 Ghz Input
  55. HMC204MS8G - GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 4 - 8 GHz INPUT
  56. HMC205 - Gaas Mmic Passive Frequency Doubler, 6 - 12 Ghz Input
  57. HMC207S8 - Gaas Mmic Smt Doublebalanced Mixer, 0.7 - 2.0 Ghz
  58. HMC208MS8 - Gaas Mmic Smt Doublebalanced Mixer, 0.7 - 2.0 Ghz
  59. HMC210MS8 - Gaas Mmic Voltage-variable Attenuator, 1.5 - 2.3 Ghz
  60. HMC213MS8 - GAAS Mmic SMT Double-balanced Mixer 1.5 - 4.5 GHZ
  61. HMC214MS8 - High Ip3 Gaas Mmic Mixer, 2.4 - 4.0 Ghz
  62. HMC214MS8E - HIGH IP3 GaAs MMIC MIXER, 2.4 - 4.0 GHz
  63. HMC216MS8 - Gaas Mmic Smt Double-balanced Fet Mixer, 1.3 - 2.5 Ghz
  64. HMC218MS8 - Gaas Mmic Smt Doublebalanced Mixer, 4.5 - 6 Ghz
  65. HMC219MS8 - Gaas Mmic Smt Doublebalanced Mixer, 4.5 - 9 Ghz
  66. HMC220MS8 - Gaas Mmic Smt Doublebalanced Mixer, 5 - 12 Ghz
  67. HMC221 - Gaas Mmic Sot26 Spdt Switch, Dc - 3 Ghz
  68. HMC222C12 - Gaas Mmic Sp4t Switch Non-reflective Dc To 6.0 Ghz
  69. HMC224MS8 - Gaas Mmic T/r Switch 5.0 - 6.0 Ghz
  70. HMC226 - Gaas Mmic +3v Sot26 Transmit/receive Switch, Dc - 2.0 Ghz
  71. HMC230MS8 - 4 Db Lsb Gaas Mmic 3-bit Digital Attenuator, 0.75 - 2.0 Ghz
  72. HMC231G7 - Gaas Mmic Smt High Isolation Spst Switch, Dc - 6.0 Ghz
  73. HMC232 - Gaas Mmic Spdt Non-reflective Switch, Dc - 15.0 Ghz
  74. HMC232C8 - Gaas Mmic Smt High Isolation Spdt Switch, Dc - 8.0 Ghz
  75. HMC232G7 - Gaas Mmic Smt High Isolation Spdt Switch, Dc - 6.0 Ghz
  76. HMC232G8 - Gaas Mmic High Isolation Smt Spdt Switch, Dc - 6.0 Ghz
  77. HMC232LP4 - Gaas Mmic Spdt Non-reflective Switch, Dc - 12.0 Ghz
  78. HMC233G8 - Gaas Mmic High Isolation Smt Spdt Switch, Dc - 6.0 Ghz
  79. HMC234C8 - Gaas Mmic Smt High Isolation Spdt Switch, Dc - 8.0 Ghz
  80. HMC235QS16G - Gaas Mmic Smt 5 - Bit Digital Attenuator Dc - 4 Ghz
  81. HMC239S8 - Industry-standard Soic8 SPDT Switch DC - 2.5 GHZ
  82. HMC240 - Gaas Mmic Spdt Switch Dc - 4.0 Ghz
  83. HMC241LP3 - DC - 4 GHz, 0.6dB Insertion Loss, 47dB Isolation, +26dBm Input P1dBThe HMC241LP3 & HMC241LP3E are general purposenon-refl ective SP4T switches in low cost leadlesssurface mount packages. Covering DC - 4.0GHz, this switch offers high isolation and hasA lowinsertion loss of 0.7 dB at 2 GHz. The switch offers asingle positive bias and true TTL/CMOS compatibility.A 2:4 decoder is integrated on the switch requiringonly 2 control lines andA positive bias to select eachpath, replacing 4 to 8 control lines normal
  84. HMC241QS16 - Gaas Mmic Sp4t Non-reflective Switch, Dc - 3.5 Ghz
  85. HMC244G16 - Gaas Mmic Sp4t Non-reflective Switch, Dc - 4.0 Ghz
  86. HMC245QS16 - Gaas Mmic Sp3t Non-reflective Switch, Dc - 3.5 Ghz
  87. HMC247 - Die, 9 - 21 GHz, 5dB Ins. Loss, 300-60 Degree Phase RangeThe HMC247 is an Analog Phase S...
  88. HMC251MS8 - Gaas Mmic Smt Divide-by-2, 3.0 - 6.5 Ghz
  89. HMC252QS24 - Gaas Mmic Sp6t Non-reflective Switch, Dc - 3.0 Ghz
  90. HMC253QS24 - Gaas Mmic Sp8t Non-reflective Switch, Dc - 2.5 Ghz
  91. HMC256 - Gaas Mmic I/q Mixer 5.9 - 12 Ghz
  92. HMC258 - Gaas Mmic Sub-harmonically Pumped Mixer, 14 - 21 Ghz
  93. HMC258LM3 - Gaas Mmic Sub-harmonic Smt Mixer, 14 - 20 Ghz
  94. HMC259 - Gaas Mmic Sub-harmonically Pumped Mixer 28 - 40 Ghz
  95. HMC260 - Gaas Mmic Fundamental Mixer, 14 - 26 Ghz
  96. HMC260LC3B - 14 - 26 GHz, 40dB LO/RF Iso, -7.5dB Conv. Gain, +20dBm IIP3The HMC260LC3B isA general purpose doublebalanced mixer inA leadless RoHS SMT packagethat can be used as an upconverter or downconverterbetween 14 and 26 GHz. This mixer requires noexternal components or matching circuitry. TheHMC260LC3B provides excellent LO to RF and LOto IF suppression due to optimized balun structures.The mixer operates with LO drive levels above +9dBm. The HMC260LC3B eliminates the need for wirebonding, allowing use of surfac
  97. HMC261LM1 - Smt Distributed Gaas Mmic Amplifier 20 - 32 Ghz
  98. HMC262 - Gaas Mmic Low Noise Amplifier 15 - 24 Ghz
  99. HMC263 - Gaas Mmic Low Noise Amplifier, 24 - 36 Ghz
  100. HMC264 - Gaas Mmic Sub-harmonically Pumped Mixer, 20 - 32 Ghz
  101. HMC264LC3B - Sub-Harmonic Mixer, 21 - 31 GHz, 40dB LO/RF Iso., 0 dBm LO
  102. HMC264LM3 - Gaas Mmic Sub-harmonic Smt Mixer, 20 - 30 Ghz
  103. HMC265 - Gaas Mmic Sub-harmonically Pumped Downconverter, 20 - 32 Ghz
  104. HMC265LM3 - Gaas Mmic Sub-harmonic Smt Mixer, 20 - 31 Ghz
  105. HMC266 - Gaas Mmic Sub-harmonically Pumped Mixer, 20 - 40 Ghz
  106. HMC268LM1 - SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
  107. HMC270MS8G - Gaas Mmic Spdt Switch Non-reflective, Dc - 8.0 Ghz
  108. HMC272MS8 - Gaas Mmic Smt Single Balanced Mixer, 1.7 - 3 Ghz
  109. HMC273MS10G - 1 Db Lsb Gaas Mmic 5-bit Digital Attenuator, 0.7 - 3.7 Ghz
  110. HMC273MS10GE - 5-Bit, 1 to 31dB Range, 0.7 to 3.7 GHz, +/- 0.2 dB Bit AccuracyThe HMC273MS10G & HMC273MS10GE are generalpurpose broadband 5-Bit positive control GaAsIC digital attenuators in 10 lead MSOP plastic packages.Covering 0.7 to 3.7 GHz, the insertion loss istypically less than 2.5 dB. The attenuator bit valuesare 1 (LSB), 2, 4, 8, and 16 dB forA total attenuationof 31 dB. Accuracy is excellent at ± 0.2 dB typicalwith an IIP3 of up to +48 dBm. Five bit control voltageinputs, toggled between 0 and +3 to +5 volts,
  111. HMC274QS16 - 1 Db Lsb Gaas Ic 5-bit Digital Attenuator, 0.7 - 2.7 Ghz
  112. HMC276QS24 - Gaas Mmic 4x2 Switch Matrix, 0.7 - 3.0 Ghz
  113. HMC279MS8G - Gaas Mmic Driver Amplifier 2.5 - 4.2 Ghz
  114. HMC280MS8G - Gaas Mmic Power Amplifier 5.0 - 6.0 Ghz
  115. HMC281 - Gaas Mmic Low Noise Amplifier 18 - 32 Ghz
  116. HMC282 - Gaas Mmic Low Noise Amplifier 36 - 40 Ghz
  117. HMC283 - Gaas Mmic Medium Power Amplifier, 17 - 40 Ghz
  118. HMC283LM1 - Smt Medium Power Gaas Mmic Amplifier, 17 - 40 Ghz
  119. HMC284MS8G - Spdt Non-reflective Switch, Dc - 3.5 Ghz
  120. HMC285 - Gaas Mmic Smt Single Balanced Mixer, 1.7 - 3.5 Ghz
  121. HMC286 - Gaas Mmic Low Noise Amplifier, 2.3 - 2.5 Ghz
  122. HMC287MS8 - Gaas Mmic Low Noise Amplifier With Agc, 2.3 - 2.5 Ghz
  123. HMC288MS8 - 2 Db Lsb Gaas Mmic 3-bit Digital Attenuator, 0.7 - 3.7 Ghz
  124. HMC290 - 2 Db Lsb Gaas Mmic 2-bit Digital Attenuator, 0.7 - 4.0 Ghz
  125. HMC291 - 4 Db Lsb Gaas Mmic 2-bit Digital Attenuator, 0.7 - 4.0 Ghz
  126. HMC292 - Gaas Mmic Double-balanced Mixer, 18 - 32 Ghz
  127. HMC292LC3B - 16 - 30 GHz, 40dB LO/RF Iso, -8dB Conv. Gain, +20dBm IIP3The HMC292LC3B isA general puposepassive double balanced mixer inA leadlessRoHS-Compliant SMT package that can beused as an upconverter or downconverterbetween 16 and 30 GHz. This mixer requiresno external components or matching circuitry.The HMC292LC3B provides excellent LO toRF and LO to IF suppression due to optimizedbalun structures. The mixer operates with LOdrive levels above +9 dBm. The HMC292LC3Beliminates the need for wire bonding, allowing
  128. HMC292LM3C - Gaas Mmic Double-balanced Smt Mixer, 17 - 31 Ghz
  129. HMC294 - Gaas Mmic Double-balanced Mixer, 25 - 40 Ghz
  130. HMC296MS8 - Low Lo Drive Double-balanced Fet Mixer, 1.1 - 1.7 Ghz
  131. HMC300LM1 - Smt Medium Power Gaas Mmic Amplifier, 25.5 - 33.5 Ghz
  132. HMC304MS8 - Gaas Mmic High Ip3 Singlebalanced Smt Mixer, 1.7 - 3 Ghz
  133. HMC305LP4 - 0.7 - 3.8 GHz, 1.5dB Loss, 0.5-15.5dB Attn Range, +52dBm Input IP3The HMC305LP4 isA broadband 5-bit positivecontrol GaAs IC digital attenuator withA serial-toparalleldriver packaged inA leadless QFN 4 x 4mm SMT package. Covering 0.7 to 3.8 GHz, theinsertion loss is typically less than 1.5 to 2 dB. Theattenuator bit values are 0.5 (LSB), 1, 2, 4, and 8 dBforA total attenuation of 15.5 dB. Attenuation accuracyis excellent at ± 0.25 dB typical with an IIP3 ofup to +52 dBm. Five bit serial control words are
  134. HMC306MS10 - 0.5 Db Lsb Gaas Mmic 5-bit Digital Attenuator, 0.7 - 3.8 Ghz
  135. HMC306MS10E - 5-Bit, 0.5 to 15.5dB Range, 0.7 to 3.8 GHz, +/- 0.2 dB Bit AccuracyThe HMC306MS10 & HMC306MS10E are generalpurpose broadband 5-bit positive control GaAs ICdigital attenuators in 10 lead MSOP surface mountplastic packages. Covering 0.7 to 3.8 GHz, theinsertion loss is typically less than 1.5 to 2.3 dB.These attenuators’ bit values are 0.5 (LSB), 1, 2, 4 and8 dB forA total attenuation of 15.5 dB. Attenuationaccuracy is excellent at ± 0.2 dB typical with an IIP3of up to +52 dBm. Five bit control voltage input
  136. HMC307 - 1db Lsb Gaas Mmic 5-bit Digital Attenuator, Dc - 4 Ghz
  137. HMC307QS16G - 1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 4 GHz
  138. HMC308 - General Purpose 100 Mw Gaas Mmic Amplifier, 0.8 - 3.8 Ghz
  139. HMC309MS8 - 2.4 Ghz Front-end Lna / Switch Ic
  140. HMC310MS8G - Bluetooth & 2.4 Ghz Wlan Gaas Mmic Transceiver
  141. HMC311LP3 - Ingap Hbt Gain Block Mmic Amplifier, Dc - 6.0 Ghz
  142. HMC311ST89 - Ingap Hbt Gain Block Mmic Amplifier, Dc - 6.0 Ghz
  143. HMC313 - Gaas Ingap Hbt Mmic Broadband Amplifier Gain Block, Dc - 6.0 Ghz
  144. HMC314 - Gaas Ingap Hbt Mmic Driver Amplifier, 0.7 - 4.0 Ghz
  145. HMC315 - Gaas Ingap Hbt Mmic Darlington Amplifier, Dc - 7.0 Ghz
  146. HMC316MS8 - Gaas Mmic High Ip3 Doublebalanced Mixer, 1.5 - 3.5 Ghz
  147. HMC318MS8G - Gaas Mmic Low Noise Amplifier With Agc, 5.0 - 6.0 Ghz
  148. HMC320MS8G - Gaas Mmic Low Noise Amplifier, 5.0 - 6.0 Ghz
  149. HMC321LP4 - Gaas Mmic Sp8t Non-reflective Positive Control Switch, Dc - 8.0 Ghz
  150. HMC322 - Gaas Mmic Sp8t Non-reflective Switch, Dc - 10.0 Ghz
  151. HMC322LP4 - Gaas Mmic Sp8t Non-reflective Switch, Dc - 8.0 Ghz
  152. HMC326MS8 - Gaas Ingap Hbt Mmic Driver Amplifier, 3.0 - 4.5 Ghz
  153. HMC326MS8G - GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz
  154. HMC327MS8G - Gaas Ingap Hbt Mmic Power Amplifier, 3.0 - 4.0 Ghz
  155. HMC329 - Gaas Mmic Double-balanced Mixer, 25 - 40 Ghz
  156. HMC329LC3B - 25 - 32 GHz, 38dB LO/RF Iso, -10dB Conv. Gain, +18dBm IIP3The HMC329LC3B isA general purpose doublebalanced mixer inA leadless RoHS SMT packagethat can be used as an upconverter or downconverterbetween 24 and 32 GHz. This mixer requires noexternal components or matching circuitry. TheHMC329LC3B provides excellent LO to RF and LOto IF suppression due to optimized balun structures.The mixer operates with LO drive levels above +9dBm. The HMC329LC3B eliminates the need for wirebonding, allowing use of surface
  157. HMC329LM3 - Gaas Mmic Double-balanced Smt Mixer, 26 - 40 Ghz
  158. HMC330 - Gaas Mmic Sub-harmonically Pumped Mixer, 25 - 40 Ghz
  159. HMC331 - Gaas Mmic Passive Frequency Doubler, 12 - 18 Ghz Input
  160. HMC332 - Gaas Mmic Mixer W/ Integrated Lo Amplifier, 2.0 - 2.8 Ghz
  161. HMC333 - Gaas Mmic Mixer W/ Integrated Lo Amplifier, 3.0 - 3.8 Ghz
  162. HMC335G16 - 1db Lsb Gaas Mmic 5-bit Digital Attenuator, Dc - 3 Ghz
  163. HMC336MS8G - Gaas Mmic Spdt Non-reflective Positive Control Switch, Dc - 6.0 Ghz
  164. HMC337 - Gaas Mmic Sub-harmonically Pumped Mixer, 17 - 25 Ghz
  165. HMC338 - Gaas Mmic Sub-harmonically Pumped Mixer, 26 - 33 Ghz
  166. HMC339 - Gaas Mmic Sub-harmonically Pumped Mixer, 33 - 42 Ghz
  167. HMC340LP5 - Gaas Mmic Smt Double-balanced Dual Mixer, 1.7 - 4.5 Ghz
  168. HMC341 - Gaas Mmic Low Noise Amplifier, 24 - 30 Ghz
  169. HMC341LC3B - SMT GaAs PHEMT MMIC Low Noise Amplifier, 21 - 29 GHz
  170. HMC342 - Gaas Mmic Low Noise Amplifier, 13 - 25 Ghz
  171. HMC342LC4 - 13 - 25 GHz, LNA, 22dB Gain, +20dBm OIP3, 3.5dB NF
  172. HMC344 - Gaas Mmic Sp4t Non-reflective Switch, Dc - 8.0 Ghz
  173. HMC344LH5 - DC - 8 GHz SP4T Switch, 50dB Isolation, +50dBm Input IP3The HMC344LH5 isA broadband non-refl ective GaAsMESFET SP4T switch inA hermetic SMT leadlesspackage. Covering DC to 12 GHz, this switch offershigh isolation and low insertion loss. This switch alsoincludes an on board binary decoder circuit whichreduces the required logic control lines to two. Theswitch operates usingA negative control voltageof 0/-5V, and requiresA fi xed bias of -5V. Simpleexternal level shifting circuitry allows this switch to b
  174. HMC344LP3 - Gaas Mmic Sp4t Non-reflective Switch, Dc - 8.0 Ghz
  175. HMC345LP3 - Gaas Mmic Sp4t Non-reflective Positive Control Switch, Dc - 8.0 Ghz
  176. HMC346 - Gaas Mmic Voltage-variable Attenuator, Dc - 20 Ghz
  177. HMC346C8 - Gaas Mmic Smt Voltagevariable Attenuator, Dc - 8 Ghz
  178. HMC346G8 - Gaas Mmic Hermetic Smt Voltagevariable Attenuator, Dc - 8 Ghz
  179. HMC346LP3 - Gaas Mmic Voltage-variable Attenuator, Dc - 14 Ghz
  180. HMC346MS8G - Gaas Mmic Smt Voltage-variable Attenuator, Dc - 8 Ghz
  181. HMC347 - Gaas Mmic Spdt Non-reflective Switch, Dc - 20.0 Ghz
  182. HMC347C8 - Gaas Mmic Smt High Isolation Spdt Switch, Dc - 8.0 Ghz
  183. HMC347G8 - Gaas Mmic Hermetic Smt Spdt Switch, Dc - 8.0 Ghz
  184. HMC347LP3 - Gaas Mmic Spdt Non-reflective Switch, Dc - 14.0 Ghz
  185. HMC348LP3 - Gaas Mmic Spdt Non-reflective Catv Switch, Dc - 2.5 Ghz
  186. HMC349LP4C - High Isolation Spdt Non-reflective Switch, Dc - 4.0 Ghz
  187. HMC349MS8G - High Isolation Spdt Non-reflective Switch, Dc - 4.0 Ghz
  188. HMC350MS8 - Gaas Mmic High Ip3 Singlebalanced Mixer, 0.6 - 1.2 Ghz
  189. HMC351S8 - Gaas Mmic High Ip3 Doublebalanced Mixer, 0.7 - 1.2 Ghz
  190. HMC356LP3 - Gaas Phemt Mmic Low Noise Amplifier, 350 - 550 Mhz
  191. HMC358MS8G - Mmic Vco W/ Buffer Amplifier, 5.8 - 6.8 Ghz
  192. HMC361 - Gaas Hbt Mmic Divide-by-2, Dc - 11.0 Ghz
  193. HMC361S8G - Smt Gaas Hbt Mmic Divide-by-2, Dc - 10.0 Ghz
  194. HMC362 - Gaas Hbt Mmic Divide-by-4, Dc - 11.0 Ghz
  195. HMC362S8G - Smt Gaas Hbt Mmic Divide-by-4, Dc - 12.0 Ghz
  196. HMC363 - Gaas Hbt Mmic Divide-by-8, Dc - 12.0 Ghz
  197. HMC363G8 - Smt Gaas Hbt Mmic Divide-by-8, Dc - 12.0 Ghz
  198. HMC363S8G - Smt Gaas Hbt Mmic Divide-by-8, Dc - 12.0 Ghz
  199. HMC364 - Gaas Hbt Mmic Divide-by-2, Dc - 13.0 Ghz
  200. HMC364G8 - Smt Gaas Hbt Mmic Divide-by-2, Dc - 13.0 Ghz
  201. HMC364S8G - Smt Gaas Hbt Mmic Divide-by-2, Dc - 12.5 Ghz
  202. HMC365 - Gaas Hbt Mmic Divide-by-4, Dc - 13.0 Ghz
  203. HMC365G8 - Smt Gaas Hbt Mmic Divide-by-4, Dc - 13.0 Ghz
  204. HMC365S8G - Smt Gaas Hbt Mmic Divide-by-4, Dc - 13.0 Ghz
  205. HMC368LP4 - Smt Gaas Phemt Mmic Amp-doubler-amp, 9.0 - 16.0 Ghz Output
  206. HMC369LP3 - Smt Gaas Hbt Mmic X2 Active Frequency Multiplier, 9.9 - 12.7 Ghz Output
  207. HMC370LP4 - Smt Gaas Hbt Mmic X4 Active Frequency Multiplier, 14.4 - 16.4 Ghz Output
  208. HMC372LP3 - Gaas Phemt Mmic Low Noise Amplifier, 700 - 1000 Mhz
  209. HMC373LP3 - Gaas Phemt Mmic Low Noise Amplifier W/ Bypass Mode, 700 - 1000 Mhz
  210. HMC374 - Smt Phemt Low Noise Amplifier, 0.3 - 3.0 Ghz
  211. HMC375LP3 - Gaas Phemt Mmic Low Noise Amplifier, 1.7 - 2.2 Ghz
  212. HMC376LP3 - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHzMMIC Low Noise Amplifi ers that are ideal for GSM& CDMA cellular basestation front-end receiversoperating between 700 and 1000 MHz. The amplifi erhas been optimized to provide 0.7 dB noise fi gure,15 dB gain and +36 dBm output IP3 fromA singlesupply of +5.0V. Input and output return losses are 14and 12 dB respectively and the LNA requires only oneexternal component to optimize the RF Input match.The HMC376LP3 & HMC376LP3E share the samepackage and pinout w
  213. HMC376LP3E - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHzMMIC Low Noise Amplifi ers that are ideal for GSM& CDMA cellular basestation front-end receiversoperating between 700 and 1000 MHz. The amplifi erhas been optimized to provide 0.7 dB noise fi gure,15 dB gain and +36 dBm output IP3 fromA singlesupply of +5.0V. Input and output return losses are 14and 12 dB respectively and the LNA requires only oneexternal component to optimize the RF Input match.The HMC376LP3 & HMC376LP3E share the samepackage and pinout w
  214. HMC377QS16G - Cellular High Ip3 Rfic Downconverter, 0.8 - 1.0 Ghz
  215. HMC380QS16G - Pcs/umts High Ip3 Rfic Downconverter, 1.7 - 2.2 Ghz
  216. HMC381LP6 - High Ip3 Rfic Dual Downconverter, 1.7 - 2.2 Ghz
  217. HMC382LP3 - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHzThe HMC382LP3 & HMC382LP3E high dynamicrange GaAs PHEMT MMIC Low Noise Amplifi ers areideal for GSM & CDMA cellular basestation front-endreceivers operating between 1.7 and 2.2 GHz. ThisLNA has been optimized to provide 1.0 dB noise fi gure,17 dB gain and +30 dBm output IP3 fromA singlesupply of +5.0V. Input and output return losses are13 dB typical and the LNA requires no external matchingcomponents. The HMC382LP3 & HMC382LP3Eshare the same package and pin
  218. HMC382LP3E - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHzThe HMC382LP3 & HMC382LP3E high dynamicrange GaAs PHEMT MMIC Low Noise Amplifi ers areideal for GSM & CDMA cellular basestation front-endreceivers operating between 1.7 and 2.2 GHz. ThisLNA has been optimized to provide 1.0 dB noise fi gure,17 dB gain and +30 dBm output IP3 fromA singlesupply of +5.0V. Input and output return losses are13 dB typical and the LNA requires no external matchingcomponents. The HMC382LP3 & HMC382LP3Eshare the same package and pin
  219. HMC383 - 12 - 30 GHz, 16dB Gain, +25dBm OIP3, 7dB NF, +18dBm PsatThe HMC383 isA general purpose GaAs PHEMTMMIC Driver Amplifi er which operates between12 and 30 GHz. The amplifi er provides 16 dBof gain and +18 dBm of saturated power froma +5.0V supply voltage. Consistent gain andoutput power across the operating band makeit possible to useA common driver/LO amplifi erapproach in multiple radio bands. The HMC383amplifi er can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (2.62mm2)size. The
  220. HMC383LC4 - 12 - 30 GHz, 15dB Gain, +25dBm OIP3, 7.5dB NF, +18dBm Psat, SMTMMIC Driver Amplifi er housed inA leadless RoHScompliant SMT package. The amplifi er provides 15 dBof gain and +18 dBm of saturated power fromA +5.0V supply voltage. Consistent gain and output poweracross the operating band make it possible to use acommon driver/LO amplifi er approach in multiple radiobands. The RF I/Os are DC blocked and matched to50 Ohms for ease of use. The HMC383LC4 elimatesthe need for wire bonding, allowing use of surfac
  221. HMC384LP4 - Mmic Vco W/ Buffer Amplifier, 2.05 - 2.25 Ghz
  222. HMC385LP4 - Mmic Vco W/ Buffer Amplifier, 2.25 - 2.5 Ghz
  223. HMC386LP4 - Mmic Vco W/ Buffer Amplifier, 2.6 - 2.8 Ghz
  224. HMC387MS8 - High Ip3 Gaas Mmic Mixer, 450 - 500 Mhz
  225. HMC388LP4 - Mmic Vco W/ Buffer Amplifier, 3.15 - 3.4 Ghz
  226. HMC389LP4 - Mmic Vco W/ Buffer Amplifier, 3.35 - 3.55 Ghz
  227. HMC390LP4 - Mmic Vco W/ Buffer Amplifier, 3.55 - 3.9 Ghz
  228. HMC391LP4 - Mmic Vco W/ Buffer Amplifier, 3.9 - 4.45 Ghz
  229. HMC392 - Gaas Mmic Low Noise Amplifier, 3.5 - 7.0 Ghz
  230. HMC393MS8G - Gaas Mmic Dpdt Diversity Switch, 5.0 - 6.0 Ghz
  231. HMC394LP4 - Gaas Hbt Programmable 5-bit Counter, Dc - 2.2 Ghz
  232. HMC395 - Ingap Hbt Gain Block Mmic Amplifier, Dc - 4.0 Ghz
  233. HMC396 - Ingap Hbt Gain Block Mmic Amplifier, Dc - 8.0 Ghz
  234. HMC397 - Ingap Hbt Gain Block Mmic Amplifier, Dc - 10.0 Ghz
  235. HMC398QS16G - Ku-band Mmic Vco With Divide-by-8, 14.0 - 15.0 Ghz
  236. HMC399MS8 - High Ip3 Gaas Mmic Mixer, 700 - 1000 Mhz
  237. HMC400MS8 - High Ip3 Gaas Mmic Mixer, 1.7 - 2.2 Ghz
  238. HMC401QS16G - Ku-band Mmic Vco With Divide-by-8, 13.2 - 13.5 Ghz
  239. HMC402MS8 - High Ip3 Gaas Mmic Mixer, 1.8 - 2.2 Ghz
  240. HMC403S8G - Phase Frequency Detector
  241. HMC404 - Gaas Mmic Sub-harmonically Pumped Irm Mixer, 26 - 33 Ghz
  242. HMC405 - Ingap Hbt Gain Block Mmic Amplifier, Dc - 10.0 Ghz
  243. HMC406MS8G - Gaas Ingap Hbt Mmic Power Amplifier, 5.0 - 6.0 Ghz
  244. HMC407MS8G - Gaas Ingap Hbt Mmic Power Amplifier, 5.0 - 7.0 Ghz
  245. HMC408LP3 - Gaas Ingap Hbt Mmic 1 Watt Power Amplifier, 5.1 - 5.9 Ghz
  246. HMC409LP4 - 1 Watt, High Gain Power Amplifier for 802.16x WiMAX ApplicationsThe HMC409LP4 isA high effi ciency GaAsInGaP HBT MMIC Power amplifi er operatingbetween 3.3 to 3.8 GHz. The amplifi er is packagedinA low cost, leadless SMT package.UtilizingA minimum of external componentsthe amplifi er provides 31 dB of gain and +32.5dBm of saturated power fromA +5.0V supplyvoltage. The power control (Vpd) can be usedfor full power down or RF output power/currentcontrol. The HMC409LP4 combines high gain andlinearity to me
  247. HMC410MS8G - Gaas Mmic Double-balanced High Ip3 Mixer, 9.0 - 15.0 Ghz
  248. HMC411MS8G - Gaas Mmic Single-balanced Mixer, 10.0 - 15.0 Ghz
  249. HMC412MS8G - Double-balanced Mixer, 9.0 - 15.0 Ghz
  250. HMC413QS16G - Gaas Ingap Hbt Mmic Power Amplifier, 1.6 - 2.2 Ghz
  251. HMC414MS8G - Gaas Ingap Hbt Mmic Power Amplifier, 2.2 - 2.8 Ghz
  252. HMC415LP3 - Gaas Ingap Hbt Mmic Power Amplifier, 4.9 - 5.9 Ghz
  253. HMC416LP4 - Mmic Vco W/ Buffer Amplifier, 2.75 - 3.0 Ghz
  254. HMC420QS16 - Cellular Rfic Downconverter, 0.7 - 1.0 Ghz
  255. HMC421QS16 - Pcs/umts High Ip3 Rfic Downconverter, 1.4 - 2.3 Ghz
  256. HMC422MS8 - Gaas Mmic Mixer W/ Integrated Lo Amplifier, 1.2 - 2.5 Ghz
  257. HMC423MS8 - Gaas Mmic Mixer W/ Integrated Lo Amplifier, 2.0 - 2.8 Ghz
  258. HMC424 - 0.5db Lsb Gaas Mmic 6-bit Digital Attenuator, Dc - 13 Ghz
  259. HMC424G16 - 0.5db Lsb Gaas Mmic 6-bit Digital Attenuator, Dc - 3 Ghz
  260. HMC424LH5 - DC - 13 GHz 6 Bit Digital Attenuator, 0.5 to 31.5dB RangeThe HMC424LH5 isA broadband 6-bit GaAs MMICdigital attenuator housed inA hermetic SMT leadlesspackage. Covering DC to 13 GHz, the insertion loss isless than 3.5 dB typical. The attenuator bit values are0.5 (LSB), 1, 2, 4, 8, and 16 dB forA total attenuation of31.5 dB. Attenuation accuracy is excellent at ± 0.5 dBtypical step error with an IIP3 of +32 dBm. Six controlvoltage inputs, toggled between 0 and -5V, are usedto select each attenuation state
  261. HMC424LP3 - 0.5db Lsb Gaas Mmic 6-bit Digital Attenuator, Dc - 13 Ghz
  262. HMC425 - 0.5 Db Lsb Gaas Mmic 6-bit Digital Positive Control Attenuator, 2.4 - 8.0 Ghz
  263. HMC425LP3 - 0.5 Db Lsb Gaas Mmic 6-bit Digital Positive Control Attenuator, 2.4 - 8.0 Ghz
  264. HMC426MS8 - Smt Sige Mmic Divide-by-4, Dc - 4.0 Ghz
  265. HMC427LP3 - Gaas Mmic Positive Control Transfer Switch, Dc - 8.0 Ghz
  266. HMC429LP4 - Mmic Vco W/ Buffer Amplifier, 4.45 - 5.0 Ghz
  267. HMC430LP4 - Mmic Vco W/ Buffer Amplifier, 5.0 - 5.5 Ghz
  268. HMC431LP4 - Mmic Vco W/ Buffer Amplifier, 5.5 - 6.1 Ghz
  269. HMC432 - Smt Gaas Hbt Mmic Divide-by-2, Dc - 8.0 Ghz
  270. HMC433 - Smt Gaas Hbt Mmic Divide-by-4, Dc - 8.0 Ghz
  271. HMC434 - Smt Gaas Hbt Mmic Divide-by-8, Dc - 8.0 Ghz
  272. HMC435MS8G - Spdt Non-reflective Switch, Dc - 4.0 Ghz
  273. HMC436MS8G - Gaas Mmic Dpdt Diversity Switch, 4.9 - 5.9 Ghz
  274. HMC437MS8G - Smt Gaas Hbt Mmic Divide-by-3, Dc - 7.0 Ghz
  275. HMC438MS8G - Smt Gaas Hbt Mmic Divide-by-5, Dc - 7.0 Ghz
  276. HMC439QS16G - Hbt Digital Phase-frequency Detector, 10 - 1300 Mhz
  277. HMC440QS16G - Hbt Digital Phase-frequency Detector, 10 - 1300 Mhz, W/ Integrated 5-bit Counter, 10 - 2800 Mhz
  278. HMC441 - Gaas Phemt Mmic Medium Power Amplifier, 6.0 - 18.0 Ghz
  279. HMC441LC3B - Gaas Phemt Mmic Medium Power Amplifier, 6 - 18 Ghz
  280. HMC441LH5 - 7 - 15.5 GHz Driver Amp, 16dB Gain, +32dBm OIP3, +20dBm P1dBGaAs PHEMT MMIC Medium Power Amplifi er housedinA hermetic SMT leadless package. The amplifi erprovides 15 dB of gain and 21.5 dBm of saturatedpower at 25% PAE fromA +5.0V supply. This 50Ohm matched amplifi er does not require any externalcomponents, and the RF I/Os are DC blocked,making it an ideal linear gain block or driver amplifi er.The HMC441LH5 allows the use of surface mountmanufacturing techniques and is suitable for highreliability mili
  281. HMC441LM1 - Gaas Phemt Mmic Medium Power Amplifier, 7.0 - 15.5 Ghz
  282. HMC441LP3 - Gaas Phemt Mmic Medium Power Amplifier, 6.5 - 13.5 Ghz
  283. HMC442 - Gaas Phemt Mmic Medium Power Amplifier, 17.5 - 25.5 Ghz
  284. HMC442LC3B - 17.5 - 25.5 GHz, Driver Amp, 13dB Gain, +27dBm OIP3, +22dBm P1dB
  285. HMC442LM1 - Gaas Phemt Mmic Medium Power Amplifier, 17.5 - 24 Ghz
  286. HMC443LP4 - Smt Gaas Hbt Mmic X4 Active Frequency Multiplier, 9.8 - 11.2 Ghz Output
  287. HMC444LP4 - Smt Gaas Hbt Mmic X8 Active Frequency Multiplier, 9.9 - 11.2 Ghz Output
  288. HMC445LP4 - Smt Gaas Hbt Mmic X16 Active Frequency Multiplier, 9.9 - 11.0 Ghz Output
  289. HMC446 - Gaas Mmic 10w T/r Switch, 824 - 894 Mhz
  290. HMC447LC3 - Smt Gaas Hbt Mmic Divide-by-4, 10 - 26 Ghz
  291. HMC448 - Gaas Mmic X2 Active Frequency Multiplier, 19 - 25 Ghz Output
  292. HMC448LC3B - 9500 - 12500 MHz, Active X2, +11dBm Pout, -135 dBc/Hz Phase NoiseThe HMC448LC3B isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technologyinA leadless RoHS compliant SMT package. Whendriven byA 0 dBm signal, the multiplier provides+11 dBm typical output power from 22 to 25 GHz.The Fo and 3Fo isolations are >20 dBc up to 22GHz. This multi-rate frequency multiplier canbe used in the generation ofA half rate clock for40 Gbps systems or as part ofA multiplier chain togenerateA full rate 4
  293. HMC449 - Gaas Mmic X2 Active Frequency Multiplier, 27 - 33 Ghz Output
  294. HMC449LC3B - 13500 - 16500 MHz, Active X2, +10dBm Pout, -132 dBc/Hz Phase Noisefrequencymultiplier utilizing GaAs PHEMT technology ina leadless RoHS SMT package. When driven by a0 dBm signal the multiplier provides +9 dBm typicaloutput power from 27 to 31 GHz. The Fo and 3Foisolations are >25 dBc and >30 dBc respectively at30 GHz. The HMC449LC3B is ideal for use in LOmultiplier chains yieldingA reduced parts count vs.traditional approaches. The low additive SSB PhaseNoise of -132 dBc/Hz at 100 kHz offset helps maintain
  295. HMC450QS16G - High Gain, Linear Power Amplifiers for Cellular/3G Infrastructure 800-1000 MHz, 26dB Gain, +26dBm P1dB, +40dBm OIP3 The HMC450QS16G isA high effi ciency GaAsInGaP HBT Medium Power MMIC amplifi eroperating between 800 and 1000 MHz. Theamplifi er is packaged inA low cost, surface mount16 lead package and offers the same pinout andfunctionality as the higher band HMC413QS16G1.6-2.3 GHz PA. WithA minimum of externalcomponents, the amplifi er provides 26 dBof gain, +40 dBm OIP3 and +28.5 dBm ofsaturated power
  296. HMC451 - 5 - 20 GHz, 22dB Gain, +30dBm OIP3, 6dB NF, +22dBm Psat The HMC451 isA general purpose GaAs PHEMTMMIC Medium Power Amplifi er which operatesbetween 5.0 and 20.0 GHz. The amplifi erprovides 22 dB of gain, +22 dBm of saturatedpower and 24% PAE fromA +5.0V supplyvoltage. Consistent gain and output poweracross the operating band make it possible touseA common driver/LO amplifi er approachin multiple radio bands. The HMC451 amplifi ercan easily be integrated into Multi-Chip-Modules(MCMs) due to its small (1.
  297. HMC451LC3 - Gaas Phemt Mmic Medium Power Amplifier, 5 - 20 Ghz
  298. HMC452QS16G - Ingap Hbt 1 Watt Power Amplifier, 0.45 - 2.2 Ghz
  299. HMC452ST89 - InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHzThe HMC452ST89 isA high dynamic rangeGaAs InGaP HBT 1 Watt MMIC power amplifi eroperating 400 - 2200 MHz. Packaged inan industry standard SOT89 package, theamplifi er gain is typically 9.5 dB from 1.7 to 2.2GHz. UtilizingA minimum number of externalcomponents andA single +5V supply, theamplifi er output IP3 can be optimized to +49dBm from 1.8 - 2.2 GHz. The high output IP3 andPAE makes the HMC452ST89 an ideal poweramplifi er for Cellular/PCS/3G and Fixed Wir
  300. HMC453QS16G - Ingap Hbt 1.6 Watt Power Amplifier, 0.45 - 2.2 Ghz
  301. HMC453ST89 - InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHzThe HMC453ST89 isA high dynamic rangeGaAs InGaP HBT 1.6 Watt MMIC poweramplifi er operating from 400 - 2200 MHz.Packaged in an industry standard SOT89package, the amplifi er gain is typically 8.5 dBfrom 1.7 to 2.2 GHz. UtilizingA minimum numberof external components andA single +5V supply,the amplifi er output IP3 can be optimized to +49dBm from 1.8 - 2.2 GHz. The high output IP3 andPAE makes the HMC453ST89 an ideal poweramplifi er for Cellular/PCS/3G and
  302. HMC454ST89 - Ingap Hbt 1/2 Watt High Ip3 Amplifier, 0.4 - 2.5 Ghz
  303. HMC455LP3 - Ingap Hbt 1/2 Watt High Ip3 Amplifier, 1.7 - 2.5 Ghz
  304. HMC457QS16G - Ingap Hbt 1 Watt Power Amplifier, 1.7 - 2.2 Ghz
  305. HMC459 - Gaas Phemt Mmic Power Amplifier, Dc - 18.0 Ghz
  306. HMC460 - Gaas Phemt Mmic Low Noise Amplifier, Dc - 20.0 Ghz
  307. HMC461LP3 - Ingap Hbt 1 Watt High Ip3 Amplifier, 1.7 - 2.2 Ghz
  308. HMC462 - Gaas Phemt Mmic Low Noise Amplifier, 2.0 - 20.0 Ghz
  309. HMC462LP5 - Gaas Phemt Mmic Low Noise Amplifier, 2.0 - 20.0 Ghz
  310. HMC463 - Gaas Phemt Mmic Low Noise Amplifier, Dc - 20.0 Ghz
  311. HMC463LP5 - Gaas Phemt Mmic Low Noise Agc Amplifier, 2.0 - 20.0 Ghz
  312. HMC464 - Gaas Phemt Mmic Power Amplifier, 2.0 - 20.0 Ghz
  313. HMC464LP5 - Gaas Phemt Mmic Power Amplifier, 2.0 - 20.0 Ghz
  314. HMC465 - Gaas Phemt Mmic Modulator Driver Amplifier, Dc - 20.0 Ghz
  315. HMC465LP5 - Gaas Phemt Mmic Modulator Driver Amplifier, Dc - 20.0 Ghz
  316. HMC466LP4 - Mmic Vco W/ Buffer Amplifier, 6.1 - 6.72 Ghz
  317. HMC467LP3 - 2 Db Lsb Gaas Mmic 2-bit Digital Positive Control Attenuator, Dc - 6.0 Ghz
  318. HMC468LP3 - 1 Db Lsb Gaas Mmic 3-bit Digital Positive Control Attenuator, Dc - 6.0 Ghz
  319. HMC469MS8G - Sige Hbt Dual Channel Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  320. HMC470LP3 - 1 Db Lsb Gaas Mmic 5-bit Digital Positive Control Attenuator, Dc - 3.0 Ghz
  321. HMC470LP3E - 1 dB LSB GaAs MMIC 5-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 3.0 GHz
  322. HMC471MS8G - Sige Hbt Dual Channel Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  323. HMC472LP4 - 0.5 Db Lsb Gaas Mmic 6-bit Digital Positive Control Attenuator, Dc - 3.0 Ghz
  324. HMC472LP4E - 6-Bit, 0.5 to 31.5dB Range, DC to 3 GHz, +/- 0.25 dB Bit AccuracyThe HMC472LP4 & HMC472LP4E are broadband 6-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positive controlline per bit digital attenuator incorporates off chip ACground capacitors for near DC operation, making itsuitable forA wide variety of RF and IF applications.Covering DC to 3.0 GHz, the insertion loss is less than2.0 dB typical. The attenuator bit values are 0.5 (LSB),1, 2, 4, 8, and 16 dB forA t
  325. HMC473MS8 - Gaas Mmic Voltage-variable Attenuator, 0.45 - 2.2 Ghz
  326. HMC474MP86 - DC - 5.5 GHz, 15.5dB Gain, +22dBm OIP3, +8dBm P1dB
  327. HMC476MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 6.0 Ghz
  328. HMC478MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 4.0 Ghz
  329. HMC478ST89 - DC - 4 GHz, 22dB Gain, +32dBm OIP3, +18dBm P1dB Transistor (HBT) Gain Block MMIC SMT amplifi ercovering DC to 4 GHz. Packaged in an industrystandard SOT89, the amplifi er can be used as acascadable 50 Ohm RF/IF gain stage as well as aLO or PA driver with up to +20 dBm output power.The HMC478ST89 offers 22 dB of gain withA +30dBm output IP3 at 850 MHz while requiring only62mA fromA single positive supply. The Darlingtonfeedback pair used results in reduced sensitivity tonormal process variations and excell
  330. HMC479MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  331. HMC479ST89 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  332. HMC480ST89 - Ingap Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  333. HMC481MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  334. HMC481ST89 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  335. HMC482ST89 - DC - 5 GHz, 19dB Gain, +36dBm OIP3, +24dBm P1dB The HMC482ST89 isA SiGe Heterojunction BipolarTransistor (HBT) Gain Block MMIC SMT amplifi ercovering DC to 5 GHz. Packaged in an industrystandard SOT89, the amplifi er can be used as acascadable 50 Ohm RF/IF gain stage as well as aLO or PA driver with up to +24 dBm output power.The HMC482ST89 offers 19 dB of gain withA +36dBm output IP3 at 1 GHz while requiring only 110mA fromA single positive supply. The Darlingtonfeedback pair results in reduced sensitiv
  336. HMC483MS8G - HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 0.7 - 1.4 GHzThe HMC483MS8G & HMC483MS8GE are highdynamic range passive MMIC mixers with integratedLO amplifi ers in plastic surface mount 8 lead MiniSmall Outline Packages (MSOP) covering 0.7 to 1.4GHz. Excellent input IP3 performance of +33 dBm fordown conversion and +30 dBm for up conversion isprovided for 2.5G & 3G GSM/CDMA applications atan LO drive of 0 dBm. With an input 1 dB compressionof +24 dBm, the RF port will acceptA wide range ofinput sig
  337. HMC484MS8G - Gaas Mmic 10 Watt T/r Switch Dc - 3.0 Ghz
  338. HMC485MS8G - High Ip3 Gaas Mmic Mixer With Integrated Lo Amplifier, 1.7 - 2.2 Ghz
  339. HMC486 - 7 - 9 GHz, Power Amp, 26dB Gain, +40dBm OIP3, +33dBm P1dBThe HMC486 isA high dynamic range GaAs PHEMTMMIC 2 Watt Power Amplifi er which operates from 7to 9 GHz. This amplifi er die provides 26 dB of gain,+34 dBm of saturated power and 24% PAE fromA +7.0V supply voltage. Output IP3 is +40 dBm typical. TheRF I/Os are DC blocked and matched to 50 Ohms forease of integration into Multi-Chip-Modules (MCMs).All data is taken with the chip inA 50 ohm test fi xtureconnected via 0.025mm (1 mil) diameter wire bond
  340. HMC486LP5 - 7 - 9 GHz, 22dB Gain, +40dBm OIP3, +33dBm Psat The HMC486LP5 isA high dynamic range GaAsPHEMT MMIC 2 Watt Power Amplifi er housed ina leadless 5 x 5 mm surface mount package.Operating from 7 to 9 GHz, the amplifi er provides22 dB of gain, +33 dBm of saturated power and20% PAE fromA +7.0V supply voltage. OutputIP3 is +40 dBm typical. The RF I/Os are DCblocked and matched to 50 Ohms for ease ofuse. The HMC486LP5 eliminates the need forwire bonding, allowing use of surface mountmanufacturing techniques.
  341. HMC487LP5 - 9 - 12 GHz, 20dB Gain, +36dBm OIP3, +33dBm Psat The HMC487LP5 isA high dynamic range GaAsPHEMT MMIC 2 Watt Power Amplifi er housed ina leadless 5 x 5 mm surface mount package.Operating from 9 to 12 GHz, the amplifi erprovides 20 dB of gain, +33 dBm of saturatedpower and 20% PAE fromA +7.0V supplyvoltage. Output IP3 is +36 dBm typical. The RFI/Os are DC blocked and matched to 50 Ohmsfor ease of use. The HMC487LP5 eliminates theneed for wire bonding, allowing use of surfacemount manufacturing techniques.
  342. HMC488MS8G - Gaas Mmic Mixer W/ Integrated Lo Amplifier, 4.0 - 7.0 Ghz
  343. HMC490 - Gaas Phemt Mmic Low Noise High Ip3 Amplifier, 12 - 17 Ghz
  344. HMC490LP5 - Gaas Phemt Mmic Low Noise High Ip3 Amplifier, 12 - 16 Ghz
  345. HMC491LP3 - Gaas Mmic Low Noise Amplifier W/ Bypass Mode, 3.4 - 3.8 Ghz
  346. HMC492LP3 - Smt Gaas Hbt Mmic Divide-by-2, Dc - 18 Ghz
  347. HMC493LP3 - Smt Gaas Hbt Mmic Divide-by-4, Dc - 18 Ghz
  348. HMC494LP3 - Smt Gaas Hbt Mmic Divide-by-8, Dc - 18 Ghz
  349. HMC498 - Gaas Phemt Mmic Power Amplifier, 17 - 24 Ghz
  350. HMC498LC4 - 17 - 24 GHz, 22dB Gain, +26dBm Psat, +36dBm OIP3
  351. HMC499 - Gaas Phemt Mmic Medium Power Amplifier, 21 - 32 Ghz
  352. HMC499LC4 - 21 - 32 GHz, 15dB Gain, +33dBm OIP3, +24dBm Psat The HMC499LC4 isA high dynamic rangeGaAs PHEMT MMIC Medium Power Amplifi erhoused inA leadless “Pb free” RoHS CompliantSMT package. Operating from 21 to 32 GHz,the amplifi er provides 16 dB of gain, +24dBm of saturated power and 16% PAE froma +5.0V supply voltage. The RF I/Os are DCblocked and matched to 50 Ohms for ease ofuse. The HMC499LC4 eliminates the need forwire bonding, allowing use of surface mountmanufacturing techniques.
  353. HMC500LP3 - Gaas Hbt Vector Modulator 1.8 - 2.2 Ghz
  354. HMC500LP3E - GaAs HBT VECTOR MODULATOR 1.8 - 2.2 GHz
  355. HMC505LP4 - Mmic Vco Wl Buffer Amplifier, 6.8 - 7.4 Ghz
  356. HMC505LP4E - MMIC VCO wl BUFFER AMPLIFIER, 6.8 - 7.4 GHz
  357. HMC506LP4 - Mmic Vco W/ Buffer Amplifier, 7.8 - 8.7 Ghz
  358. HMC507LP5 - General DescriptionFeaturesFunctional DiagramThe HMC507LP5 & HMC507LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC507LP5 & HMC507LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13.5 dBm typical fromA +5Vsupply. The voltage controlled oscillator is packagedinA leadless QFN 5x5 m
  359. HMC508LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.3 - 8.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC508LP5 & HMC508LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC508LP5 & HMC508LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’smonolithic structure. Power output is +15.0 dBm typicalfromA +5V supply. The voltage controlle
  360. HMC508LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.3 - 8.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC508LP5 & HMC508LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC508LP5 & HMC508LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’smonolithic structure. Power output is +15.0 dBm typicalfromA +5V supply. The voltage controlle
  361. HMC509LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.8 - 8.8 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC509LP5 & HMC509LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC509LP5 & HMC509LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled
  362. HMC509LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.8 - 8.8 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC509LP5 & HMC509LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC509LP5 & HMC509LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled
  363. HMC510LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 8.45 - 9.55 GHz
  364. HMC510LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 8.45 - 9.55 GHz
  365. HMC511LP5 - General DescriptionFeaturesFunctional DiagramThe HMC511LP5 & HMC511LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC511LP5 & HMC511LP5E integrate resonators,negative resistance devices, varactor diodes andfeatureA half frequency output. The VCO’s phasenoise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled oscillator is packagedinA leadless QFN 5x5 mm
  366. HMC511LP5E - General DescriptionFeaturesFunctional DiagramThe HMC511LP5 & HMC511LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC511LP5 & HMC511LP5E integrate resonators,negative resistance devices, varactor diodes andfeatureA half frequency output. The VCO’s phasenoise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled oscillator is packagedinA leadless QFN 5x5 mm
  367. HMC513LP5 - Mmic Vco W/ Half Frequency Output & Divide-by-4, 10.43 - 11.46 Ghz
  368. HMC513LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.43 - 11.46 GHz
  369. HMC514LP5 - 11.3- 11.9 GHz, Div-by-4, +7dBm Po, -110 dBc/Hz Phase Noise@100kHz
  370. HMC515LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUThe HMC515LP5 & HMC515LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC515LP5 & HMC515LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +10 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if
  371. HMC515LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUThe HMC515LP5 & HMC515LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC515LP5 & HMC515LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +10 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if
  372. HMC516 - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHzThe HMC516 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 7 to 17 GHz frequency range. TheHMC516 provides 20 dB of small signal gain,1.8 dB of noise fi gure and has an output IP3greater than +20 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0
  373. HMC516LC5 - Smt Phemt Low Noise Amplifier, 9 - 18 Ghz
  374. HMC517 - Low Noise (LNA)The HMC517 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 17 to 26 GHz frequency range. TheHMC517 provides 19 dB of small signal gain,2.2 dB of noise fi gure and has an output IP3greater than +24 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0.025 mm (1 mil) diameter bondwi
  375. HMC517LC4 - 17 - 26 GHz, 19dB Gain, +13dBm P1dB, 2.5dB NFGaAs PHEMT MMIC Low Noise Amplifi er (LNA)housed inA leadless “Pb free” RoHS compliantSMT package. The HMC517LC4 provides 19 dBof small signal gain, 2.5 dB of noise fi gure andhas an output IP3 of +23 dBm. The P1dB outputpower of +13 dBm enables the LNA to alsofunction asA LO driver for balanced, I/Q or imagereject mixers. The HMC517LC4 allows the use ofsurface mount manufacturing techniques.Noise Figure: 2.5 dBGain: 19 dBOIP3: +23 dBmSingle Supply: +3V @ 67 mA
  376. HMC518 - Low Noise (LNA) The HMC518 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 20 to 32 Ghz frequency range. TheHMC518 provides 15 dB of small signal gain,3.0 dB of noise fi gure and has an output IP3greater than 23 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0.025 mm (1 mil) diameter bondwi
  377. HMC519 - Low Noise (LNA) The HMC519 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 18 to 32 Ghz frequency range. TheHMC519 provides 15 dB of small signal gain,2.8 dB of noise fi gure and has an output IP3greater than 23 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075 mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0.025 mm (1 mil) diameter bondw
  378. HMC520 - 6 - 10 GHz, 45dB LO/RF Iso, 40dB Image Rejection, +22dBm IIP3 The HMC520 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
  379. HMC520LC4 - 6 - 10 GHz, 50dB LO/RF Iso, 40dB Image Rejection, +23dBm IIP3 The HMC520LC4 isA compact I /Q MMIC mixer ina leadless “Pb free” SMT package, which can beused as either an Image Reject Mixer orA SingleSideband Upconverter. The mixer utilizes twostandard Hittite double balanced mixer cells anda 90 degree hybrid fabricated inA GaAs MESFETprocess.A low frequency quadrature hybrid wasused to produceA 100 MHz USB IF output. Thisproduct isA much smaller alternative to hybridstyle Image Reject Mixers and Singl
  380. HMC521 - 8.5 - 13.5 GHz, 45dB LO/RF Iso, 40dB Image Rejection, +24dBm IIP3The HMC521 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used
  381. HMC521LC4 - 8.5 - 13.5 GHz, 50dB LO/RF Iso, 38dB Image Rejection, +24dBm IIP3
  382. HMC522 - 11 - 16 GHz, 45dB LO/RF Iso, 35dB Image Rejection, +24dBm IIP3The HMC522 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
  383. HMC522LC4 - 11 - 16 GHz, 45dB LO/RF Iso, 35dB Image Rejection, +24dBm IIP3The HMC522LC4 isA compact I /Q MMIC mixer ina leadless “Pb free” SMT package, which can beused as either an Image Reject Mixer orA SingleSideband Upconverter. The mixer utilizes twostandard Hittite double balanced mixer cells anda 90 degree hybrid fabricated inA GaAs MESFETprocess.A low frequency quadrature hybrid wasused to produceA 100 MHz USB IF output. Thisproduct isA much smaller alternative to hybridstyle Image Reject Mixers and Singl
  384. HMC523 - 15 - 23.6 GHz, 50dB LO/RF Iso, 27dB Image Rejection, +25dBm IIP3The HMC523 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used t
  385. HMC523LC4 - 15 - 23.6 GHz, 47 dB LO/RF Iso, 25dB Image Rejection, +25dBm IIP3
  386. HMC524 - 22 - 32 GHz, 50dB LO/RF Iso, 23dB Image Rejection, +20dBm IIP3The HMC524 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
  387. HMC525 - 4 - 8.5 GHz, 50dB LO/RF Iso, 40dB Image Rejection, +23dBm IIP3 The HMC525 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
  388. HMC525LC4 - Gaas Mmic I/q Mixer 4 - 8.5 Ghz
  389. HMC526 - 6 - 10 GHz, 50dB LO/RF Iso, 40dB Image Rejection, +28dBm IIP3
  390. HMC526LC4 - 6 - 10 GHz, 50dB LO/RF Iso, 40dB Image Rejection, +28dBm IIP3
  391. HMC527 - 8.5 - 13.5 GHz, 50dB LO/RF Iso, 35dB Image Rejection, +28dBm IIP3
  392. HMC527LC4 - Gaas Mmic I/q Mixer 8.5 - 13.5 Ghz
  393. HMC528 - 11 - 16 GHz, 45dB LO/RF Iso, 35dB Image Rejection, +24dBm IIP3
  394. HMC528LC4 - 11 - 16 GHz, 45dB LO/RF Iso, 35dB Image Rejection, +26dBm IIP3
  395. HMC529LP5 - The HMC529LP5 & HMC529LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC529LP5 & HMC529LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +8 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if not required. Thevoltage control
  396. HMC531LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUTThe HMC531LP5 & HMC531LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC531LP5 & HMC531LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +7 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if
  397. HMC533LP4 - VCO, 23.8 - 24.8 GHz, +12dBm Po, -95 dBc/Hz Phase Noise@100kHzThe HMC533LP4 & HMC533LP4E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC533LP4 & HMC533LP4E integrateresonators, negative resistance devices, varactordiodes and featureA divide-by-16 output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +12 dBm typical fromA +5Vsupply voltage. Prescaler function can be disabled toconserve c
  398. HMC533LP4E - VCO, 23.8 - 24.8 GHz, +12dBm Po, -95 dBc/Hz Phase Noise@100kHzThe HMC533LP4 & HMC533LP4E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC533LP4 & HMC533LP4E integrateresonators, negative resistance devices, varactordiodes and featureA divide-by-16 output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +12 dBm typical fromA +5Vsupply voltage. Prescaler function can be disabled toconserve c
  399. HMC534LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.6 - 11.8 GHz
  400. HMC534LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.6 - 11.8 GHz
  401. HMC535LP4 - 24 - 25 GHz, Div-by-16, +11dBm Po, -98 dBc/Hz Phase Noise@100kHz
  402. HMC535LP4E - PLO, 14.7 - 15.4 GHz, +9dBm Po, -110 dBc/Hz Phase Noise@100kHzThe HMC535LP4 & HMC535LP4E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC PLOs.The PLO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +9 dBm typicalfromA +5V supply voltage. All functions (VCO, Op-Amp, PFD, Prescaler) are fully integrated whileproviding allowances for off-chip customer specifi cloop components. The phase-locked oscillator ispacka
  403. HMC536LP2 - GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6.0 GHz
  404. HMC536LP2E - GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6.0 GHz
  405. HMC536MS8G - Gaas Mmic Positive Control T/r Switch, Dc - 6.0 Ghz
  406. HMC538LP4 - SMT, 6 - 16 GHz, 8dB Ins. Loss, 800-450 Degree Phase RangeThe HMC538LP4 & HMC538LP4E are Analog PhaseShifters which are controlled via an analog control voltagefrom 0 to +5V. THe HMC538LP4 & HMC538LP4EprovideA continuously variable phase shift of 0 to 800degrees at 6 GHz, and 0 to 450 degrees at 16 GHz,with consistent insertion loss versus phase shift. Thephase shift is monotonic with respect to control voltage.The control port hasA modulation bandwidthof 50 MHz. The low insertion loss and compact sizeena
  407. HMC539LP3 - DC - 4 GHz, 5 Bit, 0.25 to 7.75dB Attenuation Range, +50dBm Input IP35-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positivecontrol line per bit digital attenuator utilizes an offchip AC ground capacitor for near DC operation,making it suitable forA wide variety of RF and IFapplications. Covering DC to 4.0 GHz, the insertionloss is less than 0.7 dB typical. The attenuator bitvalues are 0.25 (LSB), 0.5, 1, 2, and 4 dB forA totalattenuation of 7.75 dB. Attenuation
  408. HMC540LP3 - DC - 5.5 GHz, 4 Bit, 1 to 15dB Attenuation Range, +48dBm Input IP3The HMC540LP3 & HMC540LP3E are broadband4-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positive controlline per bit digital attenuator utilizes off chip AC groundcapacitors for near DC operation, making it suitable fora wide variety of RF and IF applications. Covering DCto 5.5 GHz, the insertion loss is less than 1.0 dB typical.The attenuator bit values are 1 (LSB), 2, 4 and 8 dB fora total attenuati
  409. HMC541LP3 - DC - 5 GHz, 1 Bit, 10dB Attenuation, +50dBm Input IP3The HMC541LP3 & HMC541LP3E are broadband1-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positivecontrol line digital attenuator utilizes off chipAC ground capacitors for near DC operation,making it suitable forA wide variety of RF and IFapplications. Covering DC to 5.0 GHz, the insertionloss is less than 1.0 dB typical. Attenuation accuracy isexcellent at ± 0.2 dB typical step error. The attenuatoralso features a
  410. HMC541LP3E - DC - 5 GHz, 1 Bit, 10dB Attenuation, +50dBm Input IP3The HMC541LP3 & HMC541LP3E are broadband1-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positivecontrol line digital attenuator utilizes off chipAC ground capacitors for near DC operation,making it suitable forA wide variety of RF and IFapplications. Covering DC to 5.0 GHz, the insertionloss is less than 1.0 dB typical. Attenuation accuracy isexcellent at ± 0.2 dB typical step error. The attenuatoralso features a
  411. HMC542LP4 - 0.5 Db Lsb Gaas Mmic 6-bit Digital Serial Control Attenuator, Dc - 3.0 Ghz
  412. HMC542LP4E - 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL SERIAL CONTROL ATTENUATOR, DC - 3.0 GHz
  413. HMC544 - The HMC544 & HMC544E are low cost SPDT switchesin 6-lead SOT26 packages for use in trans...
  414. HMC545 - DC - 3 GHz, 0.4dB Insertion Loss, 31dB Isolation, +34dBm Input P1dBswitches in 6-lead SOT26 plastic packages for usein general switching applications which require verylow insertion loss and very small size. With 0.25dB typical loss, these devices can control signalsfrom DC to 3.0 GHz and are especially suited forIF and RF applications including Cellular/3G, ISM,automotive and portables. The design providesexceptional insertion loss performance, ideal for fi lterand receiver switching. RF1 and RF2 are refl
  415. HMC546LP2 - The HMC546LP2 & HMC546LP2E are failsafeSPDT switches in leadless DFN surface mountplastic packages for use in transmit-receive, andLNA protection applications which require very lowdistortion and high power handling of up to 10 watts. Thedevice can control signals from 200 - 2700 MHz* andis especially suited for WiMAX and WiBro repeaters,PMR and automotive telematic applications. Thedesign provides exceptional P0.1 dB of +40 dBm and+65 dBm IIP3 on the Transmit (Tx) port. The failsafetopology allows the swit
  416. HMC546MS8G - Gaas Mmic 10w T/r Switch 0.2 - 2.2 Ghz
  417. HMC546MS8GE - GaAs MMIC 10W T/R SWITCH 0.2 - 2.2 GHz
  418. HMC547LP3 - Gaas Mmic Spdt Non-reflective Switch, Dc - 20.0 Ghz
  419. HMC548LP3 - The HMC548LP3 & HMC548LP3E are comprised oftwo internally matched SiGe HBT MMIC low noiseamplifi er stages housed in 3x3 mm leadless SMTpackages. The unique topology of the HMC548LP3& HMC548LP3E provides interstage access allowingthe designer to placeA bandpass fi lter between thetwo amplifi er stages. This fi ltering approach enablesthe receiver to reject nearby blocking signals such asthose emitted from cellular and 3G hand-helds, withoutincurring the noise fi gure degradation associated witha high rejec
  420. HMC549MS8G - DUAL OUTPUT LOW NOISE AMPLIFIER, 0.04 - 0.96 GHzThe HMC549MS8G & HMC549MS8GE are GaAsPHEMT MMIC Low Noise Amplifi ers that are idealpre-amplifi ers for CATV Set Top Box, Home Gateway,and Digital Television receivers operating between40 and 960 MHz. This high dynamic range LNA hasbeen optimized to provide 3.5 dB noise fi gure and+27 dBm output IP3 fromA single supply of +5.0V @120 mA. The outputs of this LNA are extremely wellbalanced, and can be used to driveA differential inputtuner with very high input
  421. HMC549MS8GE - DUAL OUTPUT LOW NOISE AMPLIFIER, 0.04 - 0.96 GHzThe HMC549MS8G & HMC549MS8GE are GaAsPHEMT MMIC Low Noise Amplifi ers that are idealpre-amplifi ers for CATV Set Top Box, Home Gateway,and Digital Television receivers operating between40 and 960 MHz. This high dynamic range LNA hasbeen optimized to provide 3.5 dB noise fi gure and+27 dBm output IP3 fromA single supply of +5.0V @120 mA. The outputs of this LNA are extremely wellbalanced, and can be used to driveA differential inputtuner with very high input
  422. HMC550 - Gaas Mmic Spst Failsafe Switch, Dc - 6 Ghz
  423. HMC550E - GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz
  424. HMC551LP4 - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 0.8 - 1.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC551LP4 & HMC551LP4E are high linearity,double balanced Converter ICs that operate from0.8 to 1.2 GHz and deliverA +27 dBm input third orderintercept point. The LO amplifi er output and highdynamic range mixer input are positioned so that anexternal LO fi lter can be placed in Series betweenthem. The converter provides 27 dB of LO to RF isolationand is ideal for upconverter and downconverterapplicatio
  425. HMC551LP4E - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 0.8 - 1.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC551LP4 & HMC551LP4E are high linearity,double balanced Converter ICs that operate from0.8 to 1.2 GHz and deliverA +27 dBm input third orderintercept point. The LO amplifi er output and highdynamic range mixer input are positioned so that anexternal LO fi lter can be placed in Series betweenthem. The converter provides 27 dB of LO to RF isolationand is ideal for upconverter and downconverterapplicatio
  426. HMC552LP4 - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 1.6 - 3.0 GHzTypical ApplicationsThe HMC552LP4 / HMC552LP4E is ideal forWireless Infrastructure Applications:• PCS / 3G Infrastructure• Base Stations & Repeaters• WiMAX & WiBro• ISM & Fixed WirelessGeneral DescriptionFeaturesFunctional DiagramThe HMC552LP4 & HMC552LP4E are high linearity,double-balanced converter ICs that operate from1.6 to 3.0 GHz and deliverA +25 dBm input thirdorder intercept point. The LO amplifi er output andhigh dynamic range mixer input are
  427. HMC552LP5 - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 1.6 - 3.0 GHzTypical ApplicationsThe HMC552LP4 / HMC552LP4E is ideal forWireless Infrastructure Applications:• PCS / 3G Infrastructure• Base Stations & Repeaters• WiMAX & WiBro• ISM & Fixed WirelessGeneral DescriptionFeaturesFunctional DiagramThe HMC552LP4 & HMC552LP4E are high linearity,double-balanced converter ICs that operate from1.6 to 3.0 GHz and deliverA +25 dBm input thirdorder intercept point. The LO amplifi er output andhigh dynamic range mixer input are
  428. HMC553 - The HMC553 isA passive double balanced mixerthat can be used as an upconverter or downc...
  429. HMC553LC3B - The HMC553LC3B isA general purpose doublebalanced mixer inA leadless RoHS compliant SMTpackage that can be used as an upconverter ordownconverter between 7 and 14 GHz. This mixeris fabricated inA GaAs MESFET process, andrequires no external components or matching circuitry.The HMC553LC3B provides excellent LO toRF and LO to IF isolation due to optimized balunstructures and operates with LO drive levels as low as+9 dBm. The RoHS compliant HMC553LC3B eliminatesthe need for wire bonding, and is compatiblewi
  430. HMC554 - The HMC554 isA passive double balanced mixerthat can be used as an upconverter or downc...
  431. HMC554LC3B - The HMC554LC3B isA general purpose doublebalanced mixer inA leadless RoHS compliant SMTpackage that can be used as an upconverter ordownconverter between 11 and 20 GHz. This mixer isfabricated inA GaAs MESFET process, and requiresno external components or matching circuitry. TheHMC554LC3B provides excellent LO to RF and LOto IF isolation due to optimized balun structures. TheRoHS compliant HMC554LC3B eliminates the needfor wire bonding, and is compatible with high volumesurface mount manufacturing techni
  432. HMC555 - The HMC555 isA compact I/Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twodouble balanced mixer cells andA 90 degree hybridfabricated inA GaAs MESFET process. All data shownbelow is taken with the chip mounted inA 50 Ohmtest fi xture and includes the effects of 1 mil diameterx 12 mil length bond wires on each port.A lowfrequency quadrature hybrid was used to producea 100 MHz USB IF output. This compact mixer is amuch more compact altern
  433. HMC556 - The HMC556 isA compact I/Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twodouble balanced mixer cells andA 90 degree hybridfabricated inA GaAs MESFET process. All datashown below is taken with the chip mounted in a50 Ohm test fi xture and includes the effects of 1 mildiameter x 12 mil length bond wires on each port.A low frequency quadrature hybrid was used to producea 100 MHz USB IF output. This compact mixerisA much smaller alternative
  434. HMC559 - DC - 20 GHz, Power Amp, +30 dBm Psat, 14dB Gain, +36dBm OIP3The HMC559 isA GaAs MMIC PHEMT DistributedPower Amplifi er die which operates between DC and20 GHz. The amplifi er provides 14 dB of gain,+36 dBm output IP3 and +28 dBm of output powerat 1 dB gain compression while requiring 400 mAfromA +10V supply. Gain fl atness is slightly positivefrom 4 to 20 GHz making the HMC559 ideal forEW, ECM and radar driver amplifi er applications.The HMC559 amplifi er I/O’s are internally matched to50 Ohms facilitatin
  435. HMC560 - The HMC560 chip isA miniature passive double balancedmixer which is fabricated inA GaA...
  436. HMC560LM3 - The HMC560LM3 isA 24 - 40 GHz passive, doublebalancedMMIC mixer inA SMT leadless chip carrierpackage. The mixer is fabricated inA GaAs MESFETprocess, and can be used asA downconverter orupconverter. The wide operating bandwidth allows thisdevice to be used across multiple radio bands with acommon platform. Excellent isolations are provided byon-chip baluns. The HMC560LM3 requires no externalcomponents and no DC bias. All data is with thenon-hermetic, epoxy sealed LM3 package mountedinA 50 Ohm test fi x
  437. HMC562 - 2 - 35 GHz, Driver Amp, +21.5 dBm Psat, 12dB Gain, 4 dB NF, +25dBm OIP3The HMC562 isA GaAs MMIC PHEMT DistributedDriver Amplifi er die which operates between 2 and35 GHz. The amplifi er provides 12.5 dB of gain,+25 dBm output IP3 and +18 dBm of output powerat 1 dB gain compression while requiring 80 mAfromA +8V supply. The HMC562 is ideal for EW,ECM and radar driver amplifi er applications. TheHMC562 amplifi er I/O’s are DC blocked and internallymatched to 50 Ohms facilitating integration into Multi-Chip-
  438. HMC564 - GaAs PHEMT MMIC LOW NOISEAMPLIFIER, 7 - 13.5 GHzTypical ApplicationsThe HMC564 is ideal for use asA LNA or driver amplifierfor:• Point-to-Point Radios• Point-to-Multi-Point Radios• Test Equipment and Sensors• Military & SpaceFeaturesFunctional DiagramThe HMC564 isA high dynamic range GaAs PHEMTMMIC Low Noise Amplifi er (LNA) chip which operatesfrom 7 to 13.5 GHz. The HMC564 features extremelyfl at performance characteristics including 17 dB ofsmall signal gain, 1.8 dB of noise fi gure and outputIP3 of 24
  439. HMC565 - General DescriptionFeaturesFunctional DiagramThe HMC565 isA high dynamic range GaAs PHEMTMMIC Low Noise Amplifi er (LNA) chip which operatesfrom 6 to 20 GHz. The HMC565 features 22 dB of smallsignal gain, 2.3 dB of noise fi gure and hasA consistentIP3 of 20 dBm across the operating band. This selfbiasedLNA is ideal for hybrid and MCM assembliesdue to its compact size, widband performance, single+3V supply operation, and DC blocked RF I/O’s.All data is measured with the chip inA 50 Ohm testfi xture connec
  440. HMC566 - Typical ApplicationsThe HMC566 is ideal for use asA LNA or driver amplifierfor:• Point-to-Point Radios• Point-to-Multi-Point Radios & VSAT• Test Equipment and Sensors• Military & SpaceFeaturesFunctional DiagramThe HMC566 isA high dynamic range GaAs PHEMTMMIC Low Noise Amplifi er (LNA) chip which operatesfrom 29 to 36 GHz. The HMC566 provides 20 dB ofsmall signal gain, 2.8 dB of noise fi gure and outputIP3 of 23 dBm across the operating band. This selfbiasedLNA is ideal for hybrid and MCM assembliesdue to
  441. HMC574MS8 - DC - 3 GHz, 0.3dB Insertion Loss, 30dB Isolation, +39dBm Input P1dBThe HMC574MS8 & HMC574MS8E are low-costSPDT switches in 8-lead MSOP packages for use intransmit/receive applications which require very lowdistortion at high incident power levels. The devicecan control signals from DC to 3.0 GHz and is especiallysuited for Cellular/3G infrastructure, WiMAXand WiBro applications with only 0.3 dB typicalinsertion loss. The design provides 5 watt powerhandling performance and +65 dBm third orderinterceptat +8
  442. HMC575LP4 - The HMC575LP4 & HMC575LP4E are x2 activebroadband frequency multipliers utilizing GaAsPHEMT technology inA leadless RoHS compliantSMT package. When driven byA 3 dBm signal, themultiplier provides +17 dBm typical output power from6 to 9 GHz. The Fo and 3Fo isolations are 15 dBc withrespect to output signal level. This frequency multiplierfeatures DC blocked I/O’s, and is ideal for use in LOmultiplier chains for Pt to Pt & VSAT Radios yieldingreduced parts count vs. traditional approaches. The lowadditive S
  443. HMC576 - The HMC576 die isA x2 active broadband frequ-encymultiplier utilizing GaAs PHEMT technology. Whendriven byA +3 dBm signal, the multiplier provides +17dBm typical output power from 18 to 29 GHz. The Fo and3Fo isolations are >20 dBc and >30 dBc respectivelyat 24 GHz. The HMC576 is ideal for use in LO multiplierchains for Pt to Pt & VSAT Radios yielding reducedparts count vs. traditional approaches. The low additiveSSB Phase Noise of -132 dBc/Hz at 100 kHz offsethelps maintain good system noise performance.
  444. HMC576LC3B - The HMC576LC3B isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology in aleadless RoHS compliant SMT package. When drivenbyA +3 dBm signal, the multiplier provides +15 dBmtypical output power from 18 to 29 GHz. The Fo and3Fo isolations are >20 dBc at 24 GHz. TheHMC576LC3B is ideal for use in LO multiplier chainsfor Pt to Pt & VSAT Radios yielding reduced partscount vs. traditional approaches. The low additiveSSB Phase Noise of -132 dBc/Hz at 100 kHz offsethelps maintain good system n
  445. HMC577LC4B - The HMC577LC4B isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology in aleadless RoHS compliant SMT package. When drivenbyA +5 dBm signal, the multiplier provides +20 dBmtypical output power from 27 to 31 GHz. The Fo and3Fo isolations are >55 dBc at 29 GHz. TheHMC577LC4B is ideal for use in LO multiplier chainsfor Pt to Pt & VSAT Radios yielding reduced partscount vs. traditional approaches. The low additiveSSB Phase Noise of -128 dBc/Hz at 100 kHz offsethelps maintain good system n
  446. HMC578 - The HMC578 die isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology. Whendriven byA +3 dBm signal, the multiplier provides +17dBm typical output power from 24 to 33 GHz. The Fo and3Fo isolations are >25 dBc and >36 dBc respectivelyat 28 GHz. The HMC578 is ideal for use in LO multiplierchains for Pt to Pt & VSAT Radios yielding reducedparts count vs. traditional approaches. The low additiveSSB Phase Noise of -132 dBc/Hz at 100 kHz offsethelps maintain good system noise performance.
  447. HMC578LC3B - The HMC578LC3B isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology in aleadless RoHS compliant SMT package. When drivenbyA +3 dBm signal, the multiplier provides +15 dBmtypical output power from 24 to 33 GHz. The Fo and3Fo isolations are >20 dBc and >30 dBc respectivelyat 28 GHz. The HMC578LC3B is ideal for use in LOmultiplier chains for Pt to Pt & VSAT Radios yieldingreduced parts count vs. traditional approaches. Thelow additive SSB Phase Noise of -129 dBc/Hz at100 kHz offset hel
  448. HMC579 - The HMC579 die isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology. Whendriven byA +3 dBm signal, the multiplier provides +13dBm typical output power from 32 to 46 GHz. The Foisolation is >25 dBc at 38 GHz. The HMC579 is idealfor use in LO multiplier chains for Pt to Pt & VSATRadios yielding reduced parts count vs. traditionalapproaches. The low additive SSB Phase Noise of-127 dBc/Hz at 100 kHz offset helps maintain goodsystem noise performance.
  449. HMC584LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 12.5 - 13.9 GHz
  450. HMC584LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 12.5 - 13.9 GHz
  451. HMC586LC4B - 4 - 8 GHz, +5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz General DescriptionFeaturesFunctional DiagramThe HMC586LC4B isA wideband GaAs InGaPVoltage Controlled Oscillator which incorporates theresonator, negative resistance device, and varactordiode. Output power and phase noise performanceare excellent over temperature due to the oscillator’smonolithic construction. The Vtune port acceptsan analog tuning voltage from 0 to +18V. TheHMC586LC4B VCO operates fromA single +5V supply,consumes only 55 mA of curr
  452. HMC587LC4B - WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 5 - 10 GHzControlled Oscillator which incorporates the resonator,negative resistance device, and varactor diode. Outputpower and phase noise performance are excellentover temperature due to the oscillator’s monolithicconstruction. The Vtune port accepts an analog tuningvoltage from 0 to +18 volts. The HMC587LC4B VCOoperates fromA single +5V supply, consumes only55 mA of current, and is housed inA RoHS compliantSMT package. This wideband VCO uniquely combinesthe attri
  453. HMC588LC4B - WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 8.0 - 12.5 GHzThe HMC588LC4B isA wideband GaAs InGaP HBTMMIC Voltage Controlled Oscillator which incorporatesthe resonator, negative resistance device,and varactor diode. Output power and phase noiseperformance are excellent over temperature due tothe oscillator’s monolithic construction. The Vtune portaccepts an analog tuning voltage from 0 to +13V, andaccommodatesA very fast 65 MHz tuning bandwidth.The HMC588LC4B VCO operates fromA single +5Vsupply, consumes only
  454. HMC595 - Gaas Mmic 3 Watt T/r Switch, Dc - 3 Ghz
  455. HMC595E - GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz
  456. HMC603MS10 - 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 0.7 - 3.8 GHzThe HMC603MS10 & HMC603MS10E are generalpurpose broadband 5-bit positive control GaAs ICdigital attenuators in 10 lead MSOP surface mountplastic packages. Covering 0.7 to 3.8 GHz, the insertionloss is less than 2.0 dB typical. The attenuatorbit values are 0.5 (LSB), 1, 2, 4 and 8 dB forA totalattenuation of 15.5 dB. Attenuation accuracy isexcellent at ± 0.15 dB typical with an IIP3 of +50 dBm.Five bit control voltage inputs, toggl
  457. HMC603QS16 - 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 0.7 - 3.8 GHzThe HMC603QS16 & HMC603QS16E are generalpurpose broadband 5-bit positive control GaAs ICdigital attenuators in 16 lead QSOP surface mountplastic packages. Covering 0.7 to 3.8 GHz, the insertionloss is less than 1.9 dB typical. The attenuatorbit values are 0.5 (LSB), 1, 2, 4 and 8 dB forA totalattenuation of 15.5 dB. Attenuation accuracy is excellentat ± 0.15 dB typical with an IIP3 of +50 dBm.Five bit control voltage inputs, toggl
  458. HMC-C001 - 2 - 20 GHz, 15dB Gain, +14dBm P1dB, 2.2dB NFThe HMC-C001 isA GaAs MMIC PHEMT LowNoise Distributed Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 2 and 20 GHz.The self-biased amplifi er provides 15 dB of gain,2 to 3 dB noise fi gure and +14 dBm of outputpower at 1 dB gain compression while requiringa single +12V supply. Gain fl atness is excellentfrom 2 - 18 GHz making the HMC-C001 idealfor EW, ECM RADAR and test equipmentapplications. The wideband amplifi er
  459. HMC-C002 - 2 - 20 GHz, 14dB Gain, +18dBm P1dB, 2dB NFThe HMC-C002 isA GaAs MMIC PHEMTLow Noise Distributed Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 2 and 20 GHz. Theself-biased amplifi er provides 13 dB of gain, 2 to3 dB noise fi gure and up to +18 dBm of outputpower at 1 dB gain compression while requiringa single +12V supply. Gain fl atness is excellentfrom 2 - 18 GHz making the HMC-C002 idealfor EW, ECM RADAR and test equipmentapplications. The wideband amplif
  460. HMC-C003 - 2 - 20 GHz, 15dB Gain, +26dBm P1dB, 4dB NFThe HMC-C003 isA GaAs MMIC PHEMTDistributed Power Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 2 and 20 GHz. Theself-biased amplifi er provides 15 dB of gain, +30dBm output IP3 and up to +26 dBm of outputpower at 1 dB gain compression while requiringa single +12V supply. Gain fl atness is excellentfrom 2 - 18 GHz making the HMC-C003 idealfor EW, ECM RADAR and test equipmentapplications. The wideband amplifi er I/Os
  461. HMC-C004 - 10 MHz - 20 GHz, 16dB Gain, +23dBm P1dB, 3dB NFThe HMC-C004 isA GaAs MMIC PHEMTDistributed Driver Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 10 MHz and 20GHz. The self-biased amplifi er provides 15 dBof gain, 3 to 4 dB noise fi gure and +24 dBm ofsaturated output power while requiringA single+12V supply. Gain fl atness is excellent at ± 0.5dB as well as ± 2 deg deviation from linear phasefrom 0.01 to 10 GHz making the HMC-C004ideal for OC192 fi ber opti
  462. HMC-C005 - 0.5 -18 GHz, Divide-by-2, -150 dBc/Hz SSB Phase Noise@100kHz offset The HMC-C005 isA low noise Divide-by-2 StaticDivider utilizing InGaP GaAs HBT technologypackaged inA miniature, hermetic module withreplacable SMA connectors. This device operatesfrom 0.5 to 18 GHz input frequency from asingle +5.0V DC supply. The low additive SSBphase noise of -150 dBc/Hz at 100 kHz offsethelps the user maintain excellent system noiseperformance.
  463. HMC-C006 - 0.5 -18 GHz, Divide-by-4, -150 dBc/Hz SSB Phase Noise@100kHz offsetThe HMC-C006 isA low noise Divide-by-4 StaticDivider utilizing InGaP GaAs HBT technologypackaged inA miniature, hermetic module withreplacable SMA connectors. This device operatesfrom 0.5 to 18 GHz input frequency from asingle +5.0V DC supply. The low additive SSBphase noise of -150 dBc/Hz at 100 kHz offsethelps the user maintain excellent system noiseperformance.Ultra Low SSB Phase Noise: -150 dBc/HzVery Wide BandwidthOutput Power: -4 dBm
  464. HMC-C007 - 0.5 -18 GHz, Divide-by-8, -150 dBc/Hz SSB Phase Noise@100kHz offsetThe HMC-C007 isA low noise Divide-by-8 StaticDivider utilizing InGaP GaAs HBT technologypackaged inA miniature, hermetic module withreplacable SMA connectors. This device operatesfrom 0.5 to 18 GHz input frequency from asingle +5.0V DC supply. The low additive SSBphase noise of -150 dBc/Hz at 100 kHz offsethelps the user maintain excellent system noiseperformance.Ultra Low SSB Phase Noise: -150 dBc/HzVery Wide BandwidthOutput Power: -4 dBm
  465. HMC-C008 - 15 Watt Power Amplifier Module for Wireless Infrastructure & ATE 1.8 - 2.2 GHz, 42dB Gain, +34.5dBm W-CDMA Output Power
  466. HMC-C009 - GaAs MMIC I/Q MIXER MODULE 4.0 - 8.5 GHzThe HMC-C009 isA passive I /Q MMIC mixer housedinA miniature hermetic module which can be usedas either an Image Reject Mixer orA Single SidebandUpconverter. The module utilizes two standardHittite double balanced mixer cells andA 90 degreehybrid fabricated onA GaAs MESFET process. ThisMMIC based module isA more reliable and consistentalternative to hybrid style I/Q Mixers and SingleSideband Converter assemblies. The module featuresremovable SMA connectors which
  467. HMC-C010 - Module, 6 - 16 GHz, 8dB Ins. Loss, 800-450 Degree Phase RangeThe HMC-C010 is an Analog Phase Shifter whichis controlled via an analog control voltage from 0 to+5V. The HMC-C010 providesA continuously variablephase shift of 0 to 800 degrees at 6 GHz, and 0to 450 degrees at 16 GHz, with consistent insertionloss versus phase shift. The phase shift is monotonicwith respect to control voltage. The control port has amodulation bandwidth of 50 MHz. The low insertionloss and extremely robust packaging enable this
  468. HMC-C011 - DC - 20 GHz, +23dBm P1dB, CMOS Control & 1.3 nSec Fast Switching The HMC-C011 isA general purpose broadband highisolation non-refl ective GaAs MESFET SPDT switchhoused inA miniature hermetic module with fi eldreplaceable SMA connectors. Covering DC to 20GHz, the switch offers high isolation and low insertionloss. The switch features >45 dB isolation up to 5 GHzand >35 dB isolation up to 20 GHz. CMOS interfaceallowsA single positive +5V bias voltage at very lowDC currents.
  469. HMC-C012 - 10 WATT POWER AMPLIFIER MODULE, 400 - 1000 MHzThe HMC-C012 isA 10 Watt Power Amplifi er...
  470. HMC-C013 - 10 WATT POWER AMPLIFIER MODULE, 800 - 2000 MHzThe HMC-C013 isA 10 Watt Power Amplifi er...
  471. HMC-C014 - GaAs MMIC FUNDAMENTAL MIXER MODULE, 16 - 32 GHzThe HMC-C014 isA general purpose passive doublebalancedmixer housed inA miniature hermeticmodule that can be used as an upconverter ordownconverter between 16 and 32 GHz. This mixerrequires no external components or matchingcircuitry. The HMC-C014 provides excellent LO toRF and LO to IF suppression due to optimized balunstructures. The mixer operates with LO drive levelsfrom +9 dBm to +15 dBm and requires no DC Bias.The HMC-C014 may also be used asA Bi-Phase
  472. HMC-C015 - GaAs MMIC DOUBLE BALANCED MIXER MODULE, 24 - 38 GHzThe HMC-C015 isA general purpose double-balancedmixer housed inA miniature hermetic module whichcan be used as an upconverter or downconverterbetween 24 and 38 GHz. This mixer requires noexternal components or matching circuitry. TheHMC-C015 provides excellent, LO to RF, and LO toIF suppression due to optimized balun structures. Themixer operates with LO drive levels from +11 to +15dBm and requires no DC bias. The HMC-C015 mayalso be used asA Bi-Phase Mo
  473. HMC-C016 - Wideband LNA module, 7 - 17 GHz
  474. HMC-C017 - Wideband LNA module, 17 - 27 GHz
  475. HMC-C020 - WIDEBAND POWER AMPLIFIER MODULE, 17 - 24 GHz
  476. HMC-C021 - WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz
  477. HMC-C022 - Wideband LNA module, 2 - 20 GHz
  478. HMC-C023 - Wideband Driver Amplifier Module, 2 - 20 GHz
  479. HMC-C024 - Wideband Driver Amplifier Module, 10 MHz - 20 GHz
  480. HMC-C026 - Wideband High Gain Power Amplifier Module, 2 - 20 GHz
  481. HMC-C027 - Typical ApplicationsThe HMC-C027 Wideband LNA is ideal for:• Telecom Infrastructure• Microwave Radio & VSAT• Military & Space• Test Instrumentation• Fiber Optics]FeaturesFunctional DiagramThe HMC-C027 isA GaAs MMIC PHEMT Low NoiseAmplifi er inA miniature, hermetic module whichoperates between 29 and 36 GHz. This high dynamicrange amplifi er module provides 20 dB of gain, 2.9dB noise fi gure and up to +22 dBm of output IP3 froma single +3V supply. The wideband amplifi er I/Os areinternally matched to 50 Oh
  482. MAX5953A - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
  483. MAX5953AUTM+ - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
  484. MAX5953AUTM+T - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
  485. MAX5953BUTM+ - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
  486. MAX5953BUTM+T - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w