HMC141LH5 - 7 - 14 GHz DBL-BAL Mixer, 35dB LO/RF Iso, +20dBm IIP3The HMC141LH5 isA miniature passive doublebalancedmixer housed inA hermetic SMT leadlesspackage that can be used as an upconverter ordownconverter. The device isA passive diode/baluntype mixer with high dynamic range. The mixer canhandle larger signal levels than most active mixersdue to the high third order intercept of 20 dBm. MMICimplementation provides exceptional balance in thecircuit resulting in high LO/RF and LO/IF isolationsand unit-to-unit co
HMC241LP3 - DC - 4 GHz, 0.6dB Insertion Loss, 47dB Isolation, +26dBm Input P1dBThe HMC241LP3 & HMC241LP3E are general purposenon-refl ective SP4T switches in low cost leadlesssurface mount packages. Covering DC - 4.0GHz, this switch offers high isolation and hasA lowinsertion loss of 0.7 dB at 2 GHz. The switch offers asingle positive bias and true TTL/CMOS compatibility.A 2:4 decoder is integrated on the switch requiringonly 2 control lines andA positive bias to select eachpath, replacing 4 to 8 control lines normal
HMC260LC3B - 14 - 26 GHz, 40dB LO/RF Iso, -7.5dB Conv. Gain, +20dBm IIP3The HMC260LC3B isA general purpose doublebalanced mixer inA leadless RoHS SMT packagethat can be used as an upconverter or downconverterbetween 14 and 26 GHz. This mixer requires noexternal components or matching circuitry. TheHMC260LC3B provides excellent LO to RF and LOto IF suppression due to optimized balun structures.The mixer operates with LO drive levels above +9dBm. The HMC260LC3B eliminates the need for wirebonding, allowing use of surfac
HMC273MS10G - 1 Db Lsb Gaas Mmic 5-bit Digital Attenuator, 0.7 - 3.7 Ghz
HMC273MS10GE - 5-Bit, 1 to 31dB Range, 0.7 to 3.7 GHz, +/- 0.2 dB Bit AccuracyThe HMC273MS10G & HMC273MS10GE are generalpurpose broadband 5-Bit positive control GaAsIC digital attenuators in 10 lead MSOP plastic packages.Covering 0.7 to 3.7 GHz, the insertion loss istypically less than 2.5 dB. The attenuator bit valuesare 1 (LSB), 2, 4, 8, and 16 dB forA total attenuationof 31 dB. Accuracy is excellent at ± 0.2 dB typicalwith an IIP3 of up to +48 dBm. Five bit control voltageinputs, toggled between 0 and +3 to +5 volts,
HMC274QS16 - 1 Db Lsb Gaas Ic 5-bit Digital Attenuator, 0.7 - 2.7 Ghz
HMC292LC3B - 16 - 30 GHz, 40dB LO/RF Iso, -8dB Conv. Gain, +20dBm IIP3The HMC292LC3B isA general puposepassive double balanced mixer inA leadlessRoHS-Compliant SMT package that can beused as an upconverter or downconverterbetween 16 and 30 GHz. This mixer requiresno external components or matching circuitry.The HMC292LC3B provides excellent LO toRF and LO to IF suppression due to optimizedbalun structures. The mixer operates with LOdrive levels above +9 dBm. The HMC292LC3Beliminates the need for wire bonding, allowing
HMC305LP4 - 0.7 - 3.8 GHz, 1.5dB Loss, 0.5-15.5dB Attn Range, +52dBm Input IP3The HMC305LP4 isA broadband 5-bit positivecontrol GaAs IC digital attenuator withA serial-toparalleldriver packaged inA leadless QFN 4 x 4mm SMT package. Covering 0.7 to 3.8 GHz, theinsertion loss is typically less than 1.5 to 2 dB. Theattenuator bit values are 0.5 (LSB), 1, 2, 4, and 8 dBforA total attenuation of 15.5 dB. Attenuation accuracyis excellent at ± 0.25 dB typical with an IIP3 ofup to +52 dBm. Five bit serial control words are
HMC306MS10 - 0.5 Db Lsb Gaas Mmic 5-bit Digital Attenuator, 0.7 - 3.8 Ghz
HMC306MS10E - 5-Bit, 0.5 to 15.5dB Range, 0.7 to 3.8 GHz, +/- 0.2 dB Bit AccuracyThe HMC306MS10 & HMC306MS10E are generalpurpose broadband 5-bit positive control GaAs ICdigital attenuators in 10 lead MSOP surface mountplastic packages. Covering 0.7 to 3.8 GHz, theinsertion loss is typically less than 1.5 to 2.3 dB.These attenuators’ bit values are 0.5 (LSB), 1, 2, 4 and8 dB forA total attenuation of 15.5 dB. Attenuationaccuracy is excellent at ± 0.2 dB typical with an IIP3of up to +52 dBm. Five bit control voltage input
HMC307 - 1db Lsb Gaas Mmic 5-bit Digital Attenuator, Dc - 4 Ghz
HMC307QS16G - 1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 4 GHz
HMC329LC3B - 25 - 32 GHz, 38dB LO/RF Iso, -10dB Conv. Gain, +18dBm IIP3The HMC329LC3B isA general purpose doublebalanced mixer inA leadless RoHS SMT packagethat can be used as an upconverter or downconverterbetween 24 and 32 GHz. This mixer requires noexternal components or matching circuitry. TheHMC329LC3B provides excellent LO to RF and LOto IF suppression due to optimized balun structures.The mixer operates with LO drive levels above +9dBm. The HMC329LC3B eliminates the need for wirebonding, allowing use of surface
HMC344LH5 - DC - 8 GHz SP4T Switch, 50dB Isolation, +50dBm Input IP3The HMC344LH5 isA broadband non-refl ective GaAsMESFET SP4T switch inA hermetic SMT leadlesspackage. Covering DC to 12 GHz, this switch offershigh isolation and low insertion loss. This switch alsoincludes an on board binary decoder circuit whichreduces the required logic control lines to two. Theswitch operates usingA negative control voltageof 0/-5V, and requiresA fi xed bias of -5V. Simpleexternal level shifting circuitry allows this switch to b
HMC376LP3 - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHzMMIC Low Noise Amplifi ers that are ideal for GSM& CDMA cellular basestation front-end receiversoperating between 700 and 1000 MHz. The amplifi erhas been optimized to provide 0.7 dB noise fi gure,15 dB gain and +36 dBm output IP3 fromA singlesupply of +5.0V. Input and output return losses are 14and 12 dB respectively and the LNA requires only oneexternal component to optimize the RF Input match.The HMC376LP3 & HMC376LP3E share the samepackage and pinout w
HMC376LP3E - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHzMMIC Low Noise Amplifi ers that are ideal for GSM& CDMA cellular basestation front-end receiversoperating between 700 and 1000 MHz. The amplifi erhas been optimized to provide 0.7 dB noise fi gure,15 dB gain and +36 dBm output IP3 fromA singlesupply of +5.0V. Input and output return losses are 14and 12 dB respectively and the LNA requires only oneexternal component to optimize the RF Input match.The HMC376LP3 & HMC376LP3E share the samepackage and pinout w
HMC382LP3 - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHzThe HMC382LP3 & HMC382LP3E high dynamicrange GaAs PHEMT MMIC Low Noise Amplifi ers areideal for GSM & CDMA cellular basestation front-endreceivers operating between 1.7 and 2.2 GHz. ThisLNA has been optimized to provide 1.0 dB noise fi gure,17 dB gain and +30 dBm output IP3 fromA singlesupply of +5.0V. Input and output return losses are13 dB typical and the LNA requires no external matchingcomponents. The HMC382LP3 & HMC382LP3Eshare the same package and pin
HMC382LP3E - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHzThe HMC382LP3 & HMC382LP3E high dynamicrange GaAs PHEMT MMIC Low Noise Amplifi ers areideal for GSM & CDMA cellular basestation front-endreceivers operating between 1.7 and 2.2 GHz. ThisLNA has been optimized to provide 1.0 dB noise fi gure,17 dB gain and +30 dBm output IP3 fromA singlesupply of +5.0V. Input and output return losses are13 dB typical and the LNA requires no external matchingcomponents. The HMC382LP3 & HMC382LP3Eshare the same package and pin
HMC383 - 12 - 30 GHz, 16dB Gain, +25dBm OIP3, 7dB NF, +18dBm PsatThe HMC383 isA general purpose GaAs PHEMTMMIC Driver Amplifi er which operates between12 and 30 GHz. The amplifi er provides 16 dBof gain and +18 dBm of saturated power froma +5.0V supply voltage. Consistent gain andoutput power across the operating band makeit possible to useA common driver/LO amplifi erapproach in multiple radio bands. The HMC383amplifi er can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (2.62mm2)size. The
HMC383LC4 - 12 - 30 GHz, 15dB Gain, +25dBm OIP3, 7.5dB NF, +18dBm Psat, SMTMMIC Driver Amplifi er housed inA leadless RoHScompliant SMT package. The amplifi er provides 15 dBof gain and +18 dBm of saturated power fromA +5.0V supply voltage. Consistent gain and output poweracross the operating band make it possible to use acommon driver/LO amplifi er approach in multiple radiobands. The RF I/Os are DC blocked and matched to50 Ohms for ease of use. The HMC383LC4 elimatesthe need for wire bonding, allowing use of surfac
HMC409LP4 - 1 Watt, High Gain Power Amplifier for 802.16x WiMAX ApplicationsThe HMC409LP4 isA high effi ciency GaAsInGaP HBT MMIC Power amplifi er operatingbetween 3.3 to 3.8 GHz. The amplifi er is packagedinA low cost, leadless SMT package.UtilizingA minimum of external componentsthe amplifi er provides 31 dB of gain and +32.5dBm of saturated power fromA +5.0V supplyvoltage. The power control (Vpd) can be usedfor full power down or RF output power/currentcontrol. The HMC409LP4 combines high gain andlinearity to me
HMC424 - 0.5db Lsb Gaas Mmic 6-bit Digital Attenuator, Dc - 13 Ghz
HMC424G16 - 0.5db Lsb Gaas Mmic 6-bit Digital Attenuator, Dc - 3 Ghz
HMC424LH5 - DC - 13 GHz 6 Bit Digital Attenuator, 0.5 to 31.5dB RangeThe HMC424LH5 isA broadband 6-bit GaAs MMICdigital attenuator housed inA hermetic SMT leadlesspackage. Covering DC to 13 GHz, the insertion loss isless than 3.5 dB typical. The attenuator bit values are0.5 (LSB), 1, 2, 4, 8, and 16 dB forA total attenuation of31.5 dB. Attenuation accuracy is excellent at ± 0.5 dBtypical step error with an IIP3 of +32 dBm. Six controlvoltage inputs, toggled between 0 and -5V, are usedto select each attenuation state
HMC424LP3 - 0.5db Lsb Gaas Mmic 6-bit Digital Attenuator, Dc - 13 Ghz
HMC425 - 0.5 Db Lsb Gaas Mmic 6-bit Digital Positive Control Attenuator, 2.4 - 8.0 Ghz
HMC425LP3 - 0.5 Db Lsb Gaas Mmic 6-bit Digital Positive Control Attenuator, 2.4 - 8.0 Ghz
HMC426MS8 - Smt Sige Mmic Divide-by-4, Dc - 4.0 Ghz
HMC427LP3 - Gaas Mmic Positive Control Transfer Switch, Dc - 8.0 Ghz
HMC441 - Gaas Phemt Mmic Medium Power Amplifier, 6.0 - 18.0 Ghz
HMC441LC3B - Gaas Phemt Mmic Medium Power Amplifier, 6 - 18 Ghz
HMC441LH5 - 7 - 15.5 GHz Driver Amp, 16dB Gain, +32dBm OIP3, +20dBm P1dBGaAs PHEMT MMIC Medium Power Amplifi er housedinA hermetic SMT leadless package. The amplifi erprovides 15 dB of gain and 21.5 dBm of saturatedpower at 25% PAE fromA +5.0V supply. This 50Ohm matched amplifi er does not require any externalcomponents, and the RF I/Os are DC blocked,making it an ideal linear gain block or driver amplifi er.The HMC441LH5 allows the use of surface mountmanufacturing techniques and is suitable for highreliability mili
HMC441LM1 - Gaas Phemt Mmic Medium Power Amplifier, 7.0 - 15.5 Ghz
HMC441LP3 - Gaas Phemt Mmic Medium Power Amplifier, 6.5 - 13.5 Ghz
HMC442 - Gaas Phemt Mmic Medium Power Amplifier, 17.5 - 25.5 Ghz
HMC448 - Gaas Mmic X2 Active Frequency Multiplier, 19 - 25 Ghz Output
HMC448LC3B - 9500 - 12500 MHz, Active X2, +11dBm Pout, -135 dBc/Hz Phase NoiseThe HMC448LC3B isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technologyinA leadless RoHS compliant SMT package. Whendriven byA 0 dBm signal, the multiplier provides+11 dBm typical output power from 22 to 25 GHz.The Fo and 3Fo isolations are >20 dBc up to 22GHz. This multi-rate frequency multiplier canbe used in the generation ofA half rate clock for40 Gbps systems or as part ofA multiplier chain togenerateA full rate 4
HMC449 - Gaas Mmic X2 Active Frequency Multiplier, 27 - 33 Ghz Output
HMC449LC3B - 13500 - 16500 MHz, Active X2, +10dBm Pout, -132 dBc/Hz Phase Noisefrequencymultiplier utilizing GaAs PHEMT technology ina leadless RoHS SMT package. When driven by a0 dBm signal the multiplier provides +9 dBm typicaloutput power from 27 to 31 GHz. The Fo and 3Foisolations are >25 dBc and >30 dBc respectively at30 GHz. The HMC449LC3B is ideal for use in LOmultiplier chains yieldingA reduced parts count vs.traditional approaches. The low additive SSB PhaseNoise of -132 dBc/Hz at 100 kHz offset helps maintain
HMC450QS16G - High Gain, Linear Power Amplifiers for Cellular/3G Infrastructure 800-1000 MHz, 26dB Gain, +26dBm P1dB, +40dBm OIP3 The HMC450QS16G isA high effi ciency GaAsInGaP HBT Medium Power MMIC amplifi eroperating between 800 and 1000 MHz. Theamplifi er is packaged inA low cost, surface mount16 lead package and offers the same pinout andfunctionality as the higher band HMC413QS16G1.6-2.3 GHz PA. WithA minimum of externalcomponents, the amplifi er provides 26 dBof gain, +40 dBm OIP3 and +28.5 dBm ofsaturated power
HMC451 - 5 - 20 GHz, 22dB Gain, +30dBm OIP3, 6dB NF, +22dBm Psat The HMC451 isA general purpose GaAs PHEMTMMIC Medium Power Amplifi er which operatesbetween 5.0 and 20.0 GHz. The amplifi erprovides 22 dB of gain, +22 dBm of saturatedpower and 24% PAE fromA +5.0V supplyvoltage. Consistent gain and output poweracross the operating band make it possible touseA common driver/LO amplifi er approachin multiple radio bands. The HMC451 amplifi ercan easily be integrated into Multi-Chip-Modules(MCMs) due to its small (1.
HMC451LC3 - Gaas Phemt Mmic Medium Power Amplifier, 5 - 20 Ghz
HMC452ST89 - InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHzThe HMC452ST89 isA high dynamic rangeGaAs InGaP HBT 1 Watt MMIC power amplifi eroperating 400 - 2200 MHz. Packaged inan industry standard SOT89 package, theamplifi er gain is typically 9.5 dB from 1.7 to 2.2GHz. UtilizingA minimum number of externalcomponents andA single +5V supply, theamplifi er output IP3 can be optimized to +49dBm from 1.8 - 2.2 GHz. The high output IP3 andPAE makes the HMC452ST89 an ideal poweramplifi er for Cellular/PCS/3G and Fixed Wir
HMC453ST89 - InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHzThe HMC453ST89 isA high dynamic rangeGaAs InGaP HBT 1.6 Watt MMIC poweramplifi er operating from 400 - 2200 MHz.Packaged in an industry standard SOT89package, the amplifi er gain is typically 8.5 dBfrom 1.7 to 2.2 GHz. UtilizingA minimum numberof external components andA single +5V supply,the amplifi er output IP3 can be optimized to +49dBm from 1.8 - 2.2 GHz. The high output IP3 andPAE makes the HMC453ST89 an ideal poweramplifi er for Cellular/PCS/3G and
HMC467LP3 - 2 Db Lsb Gaas Mmic 2-bit Digital Positive Control Attenuator, Dc - 6.0 Ghz
HMC468LP3 - 1 Db Lsb Gaas Mmic 3-bit Digital Positive Control Attenuator, Dc - 6.0 Ghz
HMC469MS8G - Sige Hbt Dual Channel Gain Block Mmic Amplifier, Dc - 5.0 Ghz
HMC470LP3 - 1 Db Lsb Gaas Mmic 5-bit Digital Positive Control Attenuator, Dc - 3.0 Ghz
HMC470LP3E - 1 dB LSB GaAs MMIC 5-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 3.0 GHz
HMC471MS8G - Sige Hbt Dual Channel Gain Block Mmic Amplifier, Dc - 5.0 Ghz
HMC472LP4 - 0.5 Db Lsb Gaas Mmic 6-bit Digital Positive Control Attenuator, Dc - 3.0 Ghz
HMC472LP4E - 6-Bit, 0.5 to 31.5dB Range, DC to 3 GHz, +/- 0.25 dB Bit AccuracyThe HMC472LP4 & HMC472LP4E are broadband 6-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positive controlline per bit digital attenuator incorporates off chip ACground capacitors for near DC operation, making itsuitable forA wide variety of RF and IF applications.Covering DC to 3.0 GHz, the insertion loss is less than2.0 dB typical. The attenuator bit values are 0.5 (LSB),1, 2, 4, 8, and 16 dB forA t
HMC474MP86 - DC - 5.5 GHz, 15.5dB Gain, +22dBm OIP3, +8dBm P1dB
HMC476MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 6.0 Ghz
HMC478MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 4.0 Ghz
HMC478ST89 - DC - 4 GHz, 22dB Gain, +32dBm OIP3, +18dBm P1dB Transistor (HBT) Gain Block MMIC SMT amplifi ercovering DC to 4 GHz. Packaged in an industrystandard SOT89, the amplifi er can be used as acascadable 50 Ohm RF/IF gain stage as well as aLO or PA driver with up to +20 dBm output power.The HMC478ST89 offers 22 dB of gain withA +30dBm output IP3 at 850 MHz while requiring only62mA fromA single positive supply. The Darlingtonfeedback pair used results in reduced sensitivity tonormal process variations and excell
HMC479MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
HMC479ST89 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
HMC480ST89 - Ingap Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
HMC481MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
HMC481ST89 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
HMC482ST89 - DC - 5 GHz, 19dB Gain, +36dBm OIP3, +24dBm P1dB The HMC482ST89 isA SiGe Heterojunction BipolarTransistor (HBT) Gain Block MMIC SMT amplifi ercovering DC to 5 GHz. Packaged in an industrystandard SOT89, the amplifi er can be used as acascadable 50 Ohm RF/IF gain stage as well as aLO or PA driver with up to +24 dBm output power.The HMC482ST89 offers 19 dB of gain withA +36dBm output IP3 at 1 GHz while requiring only 110mA fromA single positive supply. The Darlingtonfeedback pair results in reduced sensitiv
HMC483MS8G - HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 0.7 - 1.4 GHzThe HMC483MS8G & HMC483MS8GE are highdynamic range passive MMIC mixers with integratedLO amplifi ers in plastic surface mount 8 lead MiniSmall Outline Packages (MSOP) covering 0.7 to 1.4GHz. Excellent input IP3 performance of +33 dBm fordown conversion and +30 dBm for up conversion isprovided for 2.5G & 3G GSM/CDMA applications atan LO drive of 0 dBm. With an input 1 dB compressionof +24 dBm, the RF port will acceptA wide range ofinput sig
HMC485MS8G - High Ip3 Gaas Mmic Mixer With Integrated Lo Amplifier, 1.7 - 2.2 Ghz
HMC486 - 7 - 9 GHz, Power Amp, 26dB Gain, +40dBm OIP3, +33dBm P1dBThe HMC486 isA high dynamic range GaAs PHEMTMMIC 2 Watt Power Amplifi er which operates from 7to 9 GHz. This amplifi er die provides 26 dB of gain,+34 dBm of saturated power and 24% PAE fromA +7.0V supply voltage. Output IP3 is +40 dBm typical. TheRF I/Os are DC blocked and matched to 50 Ohms forease of integration into Multi-Chip-Modules (MCMs).All data is taken with the chip inA 50 ohm test fi xtureconnected via 0.025mm (1 mil) diameter wire bond
HMC486LP5 - 7 - 9 GHz, 22dB Gain, +40dBm OIP3, +33dBm Psat The HMC486LP5 isA high dynamic range GaAsPHEMT MMIC 2 Watt Power Amplifi er housed ina leadless 5 x 5 mm surface mount package.Operating from 7 to 9 GHz, the amplifi er provides22 dB of gain, +33 dBm of saturated power and20% PAE fromA +7.0V supply voltage. OutputIP3 is +40 dBm typical. The RF I/Os are DCblocked and matched to 50 Ohms for ease ofuse. The HMC486LP5 eliminates the need forwire bonding, allowing use of surface mountmanufacturing techniques.
HMC487LP5 - 9 - 12 GHz, 20dB Gain, +36dBm OIP3, +33dBm Psat The HMC487LP5 isA high dynamic range GaAsPHEMT MMIC 2 Watt Power Amplifi er housed ina leadless 5 x 5 mm surface mount package.Operating from 9 to 12 GHz, the amplifi erprovides 20 dB of gain, +33 dBm of saturatedpower and 20% PAE fromA +7.0V supplyvoltage. Output IP3 is +36 dBm typical. The RFI/Os are DC blocked and matched to 50 Ohmsfor ease of use. The HMC487LP5 eliminates theneed for wire bonding, allowing use of surfacemount manufacturing techniques.
HMC499 - Gaas Phemt Mmic Medium Power Amplifier, 21 - 32 Ghz
HMC499LC4 - 21 - 32 GHz, 15dB Gain, +33dBm OIP3, +24dBm Psat The HMC499LC4 isA high dynamic rangeGaAs PHEMT MMIC Medium Power Amplifi erhoused inA leadless “Pb free” RoHS CompliantSMT package. Operating from 21 to 32 GHz,the amplifi er provides 16 dB of gain, +24dBm of saturated power and 16% PAE froma +5.0V supply voltage. The RF I/Os are DCblocked and matched to 50 Ohms for ease ofuse. The HMC499LC4 eliminates the need forwire bonding, allowing use of surface mountmanufacturing techniques.
HMC507LP5 - General DescriptionFeaturesFunctional DiagramThe HMC507LP5 & HMC507LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC507LP5 & HMC507LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13.5 dBm typical fromA +5Vsupply. The voltage controlled oscillator is packagedinA leadless QFN 5x5 m
HMC508LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.3 - 8.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC508LP5 & HMC508LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC508LP5 & HMC508LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’smonolithic structure. Power output is +15.0 dBm typicalfromA +5V supply. The voltage controlle
HMC508LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.3 - 8.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC508LP5 & HMC508LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC508LP5 & HMC508LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’smonolithic structure. Power output is +15.0 dBm typicalfromA +5V supply. The voltage controlle
HMC509LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.8 - 8.8 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC509LP5 & HMC509LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC509LP5 & HMC509LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled
HMC509LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.8 - 8.8 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC509LP5 & HMC509LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC509LP5 & HMC509LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled
HMC511LP5 - General DescriptionFeaturesFunctional DiagramThe HMC511LP5 & HMC511LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC511LP5 & HMC511LP5E integrate resonators,negative resistance devices, varactor diodes andfeatureA half frequency output. The VCO’s phasenoise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled oscillator is packagedinA leadless QFN 5x5 mm
HMC511LP5E - General DescriptionFeaturesFunctional DiagramThe HMC511LP5 & HMC511LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC511LP5 & HMC511LP5E integrate resonators,negative resistance devices, varactor diodes andfeatureA half frequency output. The VCO’s phasenoise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled oscillator is packagedinA leadless QFN 5x5 mm
HMC515LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUThe HMC515LP5 & HMC515LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC515LP5 & HMC515LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +10 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if
HMC515LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUThe HMC515LP5 & HMC515LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC515LP5 & HMC515LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +10 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if
HMC516 - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHzThe HMC516 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 7 to 17 GHz frequency range. TheHMC516 provides 20 dB of small signal gain,1.8 dB of noise fi gure and has an output IP3greater than +20 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0
HMC517 - Low Noise (LNA)The HMC517 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 17 to 26 GHz frequency range. TheHMC517 provides 19 dB of small signal gain,2.2 dB of noise fi gure and has an output IP3greater than +24 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0.025 mm (1 mil) diameter bondwi
HMC517LC4 - 17 - 26 GHz, 19dB Gain, +13dBm P1dB, 2.5dB NFGaAs PHEMT MMIC Low Noise Amplifi er (LNA)housed inA leadless “Pb free” RoHS compliantSMT package. The HMC517LC4 provides 19 dBof small signal gain, 2.5 dB of noise fi gure andhas an output IP3 of +23 dBm. The P1dB outputpower of +13 dBm enables the LNA to alsofunction asA LO driver for balanced, I/Q or imagereject mixers. The HMC517LC4 allows the use ofsurface mount manufacturing techniques.Noise Figure: 2.5 dBGain: 19 dBOIP3: +23 dBmSingle Supply: +3V @ 67 mA
HMC518 - Low Noise (LNA) The HMC518 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 20 to 32 Ghz frequency range. TheHMC518 provides 15 dB of small signal gain,3.0 dB of noise fi gure and has an output IP3greater than 23 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0.025 mm (1 mil) diameter bondwi
HMC519 - Low Noise (LNA) The HMC519 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 18 to 32 Ghz frequency range. TheHMC519 provides 15 dB of small signal gain,2.8 dB of noise fi gure and has an output IP3greater than 23 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075 mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0.025 mm (1 mil) diameter bondw
HMC520 - 6 - 10 GHz, 45dB LO/RF Iso, 40dB Image Rejection, +22dBm IIP3 The HMC520 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
HMC520LC4 - 6 - 10 GHz, 50dB LO/RF Iso, 40dB Image Rejection, +23dBm IIP3 The HMC520LC4 isA compact I /Q MMIC mixer ina leadless “Pb free” SMT package, which can beused as either an Image Reject Mixer orA SingleSideband Upconverter. The mixer utilizes twostandard Hittite double balanced mixer cells anda 90 degree hybrid fabricated inA GaAs MESFETprocess.A low frequency quadrature hybrid wasused to produceA 100 MHz USB IF output. Thisproduct isA much smaller alternative to hybridstyle Image Reject Mixers and Singl
HMC521 - 8.5 - 13.5 GHz, 45dB LO/RF Iso, 40dB Image Rejection, +24dBm IIP3The HMC521 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used
HMC522 - 11 - 16 GHz, 45dB LO/RF Iso, 35dB Image Rejection, +24dBm IIP3The HMC522 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
HMC522LC4 - 11 - 16 GHz, 45dB LO/RF Iso, 35dB Image Rejection, +24dBm IIP3The HMC522LC4 isA compact I /Q MMIC mixer ina leadless “Pb free” SMT package, which can beused as either an Image Reject Mixer orA SingleSideband Upconverter. The mixer utilizes twostandard Hittite double balanced mixer cells anda 90 degree hybrid fabricated inA GaAs MESFETprocess.A low frequency quadrature hybrid wasused to produceA 100 MHz USB IF output. Thisproduct isA much smaller alternative to hybridstyle Image Reject Mixers and Singl
HMC523 - 15 - 23.6 GHz, 50dB LO/RF Iso, 27dB Image Rejection, +25dBm IIP3The HMC523 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used t
HMC524 - 22 - 32 GHz, 50dB LO/RF Iso, 23dB Image Rejection, +20dBm IIP3The HMC524 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
HMC525 - 4 - 8.5 GHz, 50dB LO/RF Iso, 40dB Image Rejection, +23dBm IIP3 The HMC525 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
HMC529LP5 - The HMC529LP5 & HMC529LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC529LP5 & HMC529LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +8 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if not required. Thevoltage control
HMC531LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUTThe HMC531LP5 & HMC531LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC531LP5 & HMC531LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +7 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if
HMC533LP4 - VCO, 23.8 - 24.8 GHz, +12dBm Po, -95 dBc/Hz Phase Noise@100kHzThe HMC533LP4 & HMC533LP4E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC533LP4 & HMC533LP4E integrateresonators, negative resistance devices, varactordiodes and featureA divide-by-16 output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +12 dBm typical fromA +5Vsupply voltage. Prescaler function can be disabled toconserve c
HMC533LP4E - VCO, 23.8 - 24.8 GHz, +12dBm Po, -95 dBc/Hz Phase Noise@100kHzThe HMC533LP4 & HMC533LP4E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC533LP4 & HMC533LP4E integrateresonators, negative resistance devices, varactordiodes and featureA divide-by-16 output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +12 dBm typical fromA +5Vsupply voltage. Prescaler function can be disabled toconserve c
HMC535LP4E - PLO, 14.7 - 15.4 GHz, +9dBm Po, -110 dBc/Hz Phase Noise@100kHzThe HMC535LP4 & HMC535LP4E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC PLOs.The PLO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +9 dBm typicalfromA +5V supply voltage. All functions (VCO, Op-Amp, PFD, Prescaler) are fully integrated whileproviding allowances for off-chip customer specifi cloop components. The phase-locked oscillator ispacka
HMC536LP2 - GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6.0 GHz
HMC536LP2E - GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6.0 GHz
HMC536MS8G - Gaas Mmic Positive Control T/r Switch, Dc - 6.0 Ghz
HMC538LP4 - SMT, 6 - 16 GHz, 8dB Ins. Loss, 800-450 Degree Phase RangeThe HMC538LP4 & HMC538LP4E are Analog PhaseShifters which are controlled via an analog control voltagefrom 0 to +5V. THe HMC538LP4 & HMC538LP4EprovideA continuously variable phase shift of 0 to 800degrees at 6 GHz, and 0 to 450 degrees at 16 GHz,with consistent insertion loss versus phase shift. Thephase shift is monotonic with respect to control voltage.The control port hasA modulation bandwidthof 50 MHz. The low insertion loss and compact sizeena
HMC539LP3 - DC - 4 GHz, 5 Bit, 0.25 to 7.75dB Attenuation Range, +50dBm Input IP35-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positivecontrol line per bit digital attenuator utilizes an offchip AC ground capacitor for near DC operation,making it suitable forA wide variety of RF and IFapplications. Covering DC to 4.0 GHz, the insertionloss is less than 0.7 dB typical. The attenuator bitvalues are 0.25 (LSB), 0.5, 1, 2, and 4 dB forA totalattenuation of 7.75 dB. Attenuation
HMC540LP3 - DC - 5.5 GHz, 4 Bit, 1 to 15dB Attenuation Range, +48dBm Input IP3The HMC540LP3 & HMC540LP3E are broadband4-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positive controlline per bit digital attenuator utilizes off chip AC groundcapacitors for near DC operation, making it suitable fora wide variety of RF and IF applications. Covering DCto 5.5 GHz, the insertion loss is less than 1.0 dB typical.The attenuator bit values are 1 (LSB), 2, 4 and 8 dB fora total attenuati
HMC541LP3 - DC - 5 GHz, 1 Bit, 10dB Attenuation, +50dBm Input IP3The HMC541LP3 & HMC541LP3E are broadband1-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positivecontrol line digital attenuator utilizes off chipAC ground capacitors for near DC operation,making it suitable forA wide variety of RF and IFapplications. Covering DC to 5.0 GHz, the insertionloss is less than 1.0 dB typical. Attenuation accuracy isexcellent at ± 0.2 dB typical step error. The attenuatoralso features a
HMC541LP3E - DC - 5 GHz, 1 Bit, 10dB Attenuation, +50dBm Input IP3The HMC541LP3 & HMC541LP3E are broadband1-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positivecontrol line digital attenuator utilizes off chipAC ground capacitors for near DC operation,making it suitable forA wide variety of RF and IFapplications. Covering DC to 5.0 GHz, the insertionloss is less than 1.0 dB typical. Attenuation accuracy isexcellent at ± 0.2 dB typical step error. The attenuatoralso features a
HMC542LP4 - 0.5 Db Lsb Gaas Mmic 6-bit Digital Serial Control Attenuator, Dc - 3.0 Ghz
HMC542LP4E - 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL SERIAL CONTROL ATTENUATOR, DC - 3.0 GHz
HMC544 - The HMC544 & HMC544E are low cost SPDT switchesin 6-lead SOT26 packages for use in trans...
HMC545 - DC - 3 GHz, 0.4dB Insertion Loss, 31dB Isolation, +34dBm Input P1dBswitches in 6-lead SOT26 plastic packages for usein general switching applications which require verylow insertion loss and very small size. With 0.25dB typical loss, these devices can control signalsfrom DC to 3.0 GHz and are especially suited forIF and RF applications including Cellular/3G, ISM,automotive and portables. The design providesexceptional insertion loss performance, ideal for fi lterand receiver switching. RF1 and RF2 are refl
HMC546LP2 - The HMC546LP2 & HMC546LP2E are failsafeSPDT switches in leadless DFN surface mountplastic packages for use in transmit-receive, andLNA protection applications which require very lowdistortion and high power handling of up to 10 watts. Thedevice can control signals from 200 - 2700 MHz* andis especially suited for WiMAX and WiBro repeaters,PMR and automotive telematic applications. Thedesign provides exceptional P0.1 dB of +40 dBm and+65 dBm IIP3 on the Transmit (Tx) port. The failsafetopology allows the swit
HMC548LP3 - The HMC548LP3 & HMC548LP3E are comprised oftwo internally matched SiGe HBT MMIC low noiseamplifi er stages housed in 3x3 mm leadless SMTpackages. The unique topology of the HMC548LP3& HMC548LP3E provides interstage access allowingthe designer to placeA bandpass fi lter between thetwo amplifi er stages. This fi ltering approach enablesthe receiver to reject nearby blocking signals such asthose emitted from cellular and 3G hand-helds, withoutincurring the noise fi gure degradation associated witha high rejec
HMC549MS8G - DUAL OUTPUT LOW NOISE AMPLIFIER, 0.04 - 0.96 GHzThe HMC549MS8G & HMC549MS8GE are GaAsPHEMT MMIC Low Noise Amplifi ers that are idealpre-amplifi ers for CATV Set Top Box, Home Gateway,and Digital Television receivers operating between40 and 960 MHz. This high dynamic range LNA hasbeen optimized to provide 3.5 dB noise fi gure and+27 dBm output IP3 fromA single supply of +5.0V @120 mA. The outputs of this LNA are extremely wellbalanced, and can be used to driveA differential inputtuner with very high input
HMC549MS8GE - DUAL OUTPUT LOW NOISE AMPLIFIER, 0.04 - 0.96 GHzThe HMC549MS8G & HMC549MS8GE are GaAsPHEMT MMIC Low Noise Amplifi ers that are idealpre-amplifi ers for CATV Set Top Box, Home Gateway,and Digital Television receivers operating between40 and 960 MHz. This high dynamic range LNA hasbeen optimized to provide 3.5 dB noise fi gure and+27 dBm output IP3 fromA single supply of +5.0V @120 mA. The outputs of this LNA are extremely wellbalanced, and can be used to driveA differential inputtuner with very high input
HMC551LP4 - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 0.8 - 1.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC551LP4 & HMC551LP4E are high linearity,double balanced Converter ICs that operate from0.8 to 1.2 GHz and deliverA +27 dBm input third orderintercept point. The LO amplifi er output and highdynamic range mixer input are positioned so that anexternal LO fi lter can be placed in Series betweenthem. The converter provides 27 dB of LO to RF isolationand is ideal for upconverter and downconverterapplicatio
HMC551LP4E - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 0.8 - 1.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC551LP4 & HMC551LP4E are high linearity,double balanced Converter ICs that operate from0.8 to 1.2 GHz and deliverA +27 dBm input third orderintercept point. The LO amplifi er output and highdynamic range mixer input are positioned so that anexternal LO fi lter can be placed in Series betweenthem. The converter provides 27 dB of LO to RF isolationand is ideal for upconverter and downconverterapplicatio
HMC552LP4 - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 1.6 - 3.0 GHzTypical ApplicationsThe HMC552LP4 / HMC552LP4E is ideal forWireless Infrastructure Applications:• PCS / 3G Infrastructure• Base Stations & Repeaters• WiMAX & WiBro• ISM & Fixed WirelessGeneral DescriptionFeaturesFunctional DiagramThe HMC552LP4 & HMC552LP4E are high linearity,double-balanced converter ICs that operate from1.6 to 3.0 GHz and deliverA +25 dBm input thirdorder intercept point. The LO amplifi er output andhigh dynamic range mixer input are
HMC552LP5 - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 1.6 - 3.0 GHzTypical ApplicationsThe HMC552LP4 / HMC552LP4E is ideal forWireless Infrastructure Applications:• PCS / 3G Infrastructure• Base Stations & Repeaters• WiMAX & WiBro• ISM & Fixed WirelessGeneral DescriptionFeaturesFunctional DiagramThe HMC552LP4 & HMC552LP4E are high linearity,double-balanced converter ICs that operate from1.6 to 3.0 GHz and deliverA +25 dBm input thirdorder intercept point. The LO amplifi er output andhigh dynamic range mixer input are
HMC553 - The HMC553 isA passive double balanced mixerthat can be used as an upconverter or downc...
HMC553LC3B - The HMC553LC3B isA general purpose doublebalanced mixer inA leadless RoHS compliant SMTpackage that can be used as an upconverter ordownconverter between 7 and 14 GHz. This mixeris fabricated inA GaAs MESFET process, andrequires no external components or matching circuitry.The HMC553LC3B provides excellent LO toRF and LO to IF isolation due to optimized balunstructures and operates with LO drive levels as low as+9 dBm. The RoHS compliant HMC553LC3B eliminatesthe need for wire bonding, and is compatiblewi
HMC554 - The HMC554 isA passive double balanced mixerthat can be used as an upconverter or downc...
HMC554LC3B - The HMC554LC3B isA general purpose doublebalanced mixer inA leadless RoHS compliant SMTpackage that can be used as an upconverter ordownconverter between 11 and 20 GHz. This mixer isfabricated inA GaAs MESFET process, and requiresno external components or matching circuitry. TheHMC554LC3B provides excellent LO to RF and LOto IF isolation due to optimized balun structures. TheRoHS compliant HMC554LC3B eliminates the needfor wire bonding, and is compatible with high volumesurface mount manufacturing techni
HMC555 - The HMC555 isA compact I/Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twodouble balanced mixer cells andA 90 degree hybridfabricated inA GaAs MESFET process. All data shownbelow is taken with the chip mounted inA 50 Ohmtest fi xture and includes the effects of 1 mil diameterx 12 mil length bond wires on each port.A lowfrequency quadrature hybrid was used to producea 100 MHz USB IF output. This compact mixer is amuch more compact altern
HMC556 - The HMC556 isA compact I/Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twodouble balanced mixer cells andA 90 degree hybridfabricated inA GaAs MESFET process. All datashown below is taken with the chip mounted in a50 Ohm test fi xture and includes the effects of 1 mildiameter x 12 mil length bond wires on each port.A low frequency quadrature hybrid was used to producea 100 MHz USB IF output. This compact mixerisA much smaller alternative
HMC559 - DC - 20 GHz, Power Amp, +30 dBm Psat, 14dB Gain, +36dBm OIP3The HMC559 isA GaAs MMIC PHEMT DistributedPower Amplifi er die which operates between DC and20 GHz. The amplifi er provides 14 dB of gain,+36 dBm output IP3 and +28 dBm of output powerat 1 dB gain compression while requiring 400 mAfromA +10V supply. Gain fl atness is slightly positivefrom 4 to 20 GHz making the HMC559 ideal forEW, ECM and radar driver amplifi er applications.The HMC559 amplifi er I/O’s are internally matched to50 Ohms facilitatin
HMC560 - The HMC560 chip isA miniature passive double balancedmixer which is fabricated inA GaA...
HMC560LM3 - The HMC560LM3 isA 24 - 40 GHz passive, doublebalancedMMIC mixer inA SMT leadless chip carrierpackage. The mixer is fabricated inA GaAs MESFETprocess, and can be used asA downconverter orupconverter. The wide operating bandwidth allows thisdevice to be used across multiple radio bands with acommon platform. Excellent isolations are provided byon-chip baluns. The HMC560LM3 requires no externalcomponents and no DC bias. All data is with thenon-hermetic, epoxy sealed LM3 package mountedinA 50 Ohm test fi x
HMC562 - 2 - 35 GHz, Driver Amp, +21.5 dBm Psat, 12dB Gain, 4 dB NF, +25dBm OIP3The HMC562 isA GaAs MMIC PHEMT DistributedDriver Amplifi er die which operates between 2 and35 GHz. The amplifi er provides 12.5 dB of gain,+25 dBm output IP3 and +18 dBm of output powerat 1 dB gain compression while requiring 80 mAfromA +8V supply. The HMC562 is ideal for EW,ECM and radar driver amplifi er applications. TheHMC562 amplifi er I/O’s are DC blocked and internallymatched to 50 Ohms facilitating integration into Multi-Chip-
HMC564 - GaAs PHEMT MMIC LOW NOISEAMPLIFIER, 7 - 13.5 GHzTypical ApplicationsThe HMC564 is ideal for use asA LNA or driver amplifierfor:• Point-to-Point Radios• Point-to-Multi-Point Radios• Test Equipment and Sensors• Military & SpaceFeaturesFunctional DiagramThe HMC564 isA high dynamic range GaAs PHEMTMMIC Low Noise Amplifi er (LNA) chip which operatesfrom 7 to 13.5 GHz. The HMC564 features extremelyfl at performance characteristics including 17 dB ofsmall signal gain, 1.8 dB of noise fi gure and outputIP3 of 24
HMC565 - General DescriptionFeaturesFunctional DiagramThe HMC565 isA high dynamic range GaAs PHEMTMMIC Low Noise Amplifi er (LNA) chip which operatesfrom 6 to 20 GHz. The HMC565 features 22 dB of smallsignal gain, 2.3 dB of noise fi gure and hasA consistentIP3 of 20 dBm across the operating band. This selfbiasedLNA is ideal for hybrid and MCM assembliesdue to its compact size, widband performance, single+3V supply operation, and DC blocked RF I/O’s.All data is measured with the chip inA 50 Ohm testfi xture connec
HMC566 - Typical ApplicationsThe HMC566 is ideal for use asA LNA or driver amplifierfor:• Point-to-Point Radios• Point-to-Multi-Point Radios & VSAT• Test Equipment and Sensors• Military & SpaceFeaturesFunctional DiagramThe HMC566 isA high dynamic range GaAs PHEMTMMIC Low Noise Amplifi er (LNA) chip which operatesfrom 29 to 36 GHz. The HMC566 provides 20 dB ofsmall signal gain, 2.8 dB of noise fi gure and outputIP3 of 23 dBm across the operating band. This selfbiasedLNA is ideal for hybrid and MCM assembliesdue to
HMC574MS8 - DC - 3 GHz, 0.3dB Insertion Loss, 30dB Isolation, +39dBm Input P1dBThe HMC574MS8 & HMC574MS8E are low-costSPDT switches in 8-lead MSOP packages for use intransmit/receive applications which require very lowdistortion at high incident power levels. The devicecan control signals from DC to 3.0 GHz and is especiallysuited for Cellular/3G infrastructure, WiMAXand WiBro applications with only 0.3 dB typicalinsertion loss. The design provides 5 watt powerhandling performance and +65 dBm third orderinterceptat +8
HMC575LP4 - The HMC575LP4 & HMC575LP4E are x2 activebroadband frequency multipliers utilizing GaAsPHEMT technology inA leadless RoHS compliantSMT package. When driven byA 3 dBm signal, themultiplier provides +17 dBm typical output power from6 to 9 GHz. The Fo and 3Fo isolations are 15 dBc withrespect to output signal level. This frequency multiplierfeatures DC blocked I/O’s, and is ideal for use in LOmultiplier chains for Pt to Pt & VSAT Radios yieldingreduced parts count vs. traditional approaches. The lowadditive S
HMC576 - The HMC576 die isA x2 active broadband frequ-encymultiplier utilizing GaAs PHEMT technology. Whendriven byA +3 dBm signal, the multiplier provides +17dBm typical output power from 18 to 29 GHz. The Fo and3Fo isolations are >20 dBc and >30 dBc respectivelyat 24 GHz. The HMC576 is ideal for use in LO multiplierchains for Pt to Pt & VSAT Radios yielding reducedparts count vs. traditional approaches. The low additiveSSB Phase Noise of -132 dBc/Hz at 100 kHz offsethelps maintain good system noise performance.
HMC576LC3B - The HMC576LC3B isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology in aleadless RoHS compliant SMT package. When drivenbyA +3 dBm signal, the multiplier provides +15 dBmtypical output power from 18 to 29 GHz. The Fo and3Fo isolations are >20 dBc at 24 GHz. TheHMC576LC3B is ideal for use in LO multiplier chainsfor Pt to Pt & VSAT Radios yielding reduced partscount vs. traditional approaches. The low additiveSSB Phase Noise of -132 dBc/Hz at 100 kHz offsethelps maintain good system n
HMC577LC4B - The HMC577LC4B isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology in aleadless RoHS compliant SMT package. When drivenbyA +5 dBm signal, the multiplier provides +20 dBmtypical output power from 27 to 31 GHz. The Fo and3Fo isolations are >55 dBc at 29 GHz. TheHMC577LC4B is ideal for use in LO multiplier chainsfor Pt to Pt & VSAT Radios yielding reduced partscount vs. traditional approaches. The low additiveSSB Phase Noise of -128 dBc/Hz at 100 kHz offsethelps maintain good system n
HMC578 - The HMC578 die isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology. Whendriven byA +3 dBm signal, the multiplier provides +17dBm typical output power from 24 to 33 GHz. The Fo and3Fo isolations are >25 dBc and >36 dBc respectivelyat 28 GHz. The HMC578 is ideal for use in LO multiplierchains for Pt to Pt & VSAT Radios yielding reducedparts count vs. traditional approaches. The low additiveSSB Phase Noise of -132 dBc/Hz at 100 kHz offsethelps maintain good system noise performance.
HMC578LC3B - The HMC578LC3B isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology in aleadless RoHS compliant SMT package. When drivenbyA +3 dBm signal, the multiplier provides +15 dBmtypical output power from 24 to 33 GHz. The Fo and3Fo isolations are >20 dBc and >30 dBc respectivelyat 28 GHz. The HMC578LC3B is ideal for use in LOmultiplier chains for Pt to Pt & VSAT Radios yieldingreduced parts count vs. traditional approaches. Thelow additive SSB Phase Noise of -129 dBc/Hz at100 kHz offset hel
HMC579 - The HMC579 die isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology. Whendriven byA +3 dBm signal, the multiplier provides +13dBm typical output power from 32 to 46 GHz. The Foisolation is >25 dBc at 38 GHz. The HMC579 is idealfor use in LO multiplier chains for Pt to Pt & VSATRadios yielding reduced parts count vs. traditionalapproaches. The low additive SSB Phase Noise of-127 dBc/Hz at 100 kHz offset helps maintain goodsystem noise performance.
HMC586LC4B - 4 - 8 GHz, +5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz General DescriptionFeaturesFunctional DiagramThe HMC586LC4B isA wideband GaAs InGaPVoltage Controlled Oscillator which incorporates theresonator, negative resistance device, and varactordiode. Output power and phase noise performanceare excellent over temperature due to the oscillator’smonolithic construction. The Vtune port acceptsan analog tuning voltage from 0 to +18V. TheHMC586LC4B VCO operates fromA single +5V supply,consumes only 55 mA of curr
HMC587LC4B - WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 5 - 10 GHzControlled Oscillator which incorporates the resonator,negative resistance device, and varactor diode. Outputpower and phase noise performance are excellentover temperature due to the oscillator’s monolithicconstruction. The Vtune port accepts an analog tuningvoltage from 0 to +18 volts. The HMC587LC4B VCOoperates fromA single +5V supply, consumes only55 mA of current, and is housed inA RoHS compliantSMT package. This wideband VCO uniquely combinesthe attri
HMC588LC4B - WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 8.0 - 12.5 GHzThe HMC588LC4B isA wideband GaAs InGaP HBTMMIC Voltage Controlled Oscillator which incorporatesthe resonator, negative resistance device,and varactor diode. Output power and phase noiseperformance are excellent over temperature due tothe oscillator’s monolithic construction. The Vtune portaccepts an analog tuning voltage from 0 to +13V, andaccommodatesA very fast 65 MHz tuning bandwidth.The HMC588LC4B VCO operates fromA single +5Vsupply, consumes only
HMC603MS10 - 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 0.7 - 3.8 GHzThe HMC603MS10 & HMC603MS10E are generalpurpose broadband 5-bit positive control GaAs ICdigital attenuators in 10 lead MSOP surface mountplastic packages. Covering 0.7 to 3.8 GHz, the insertionloss is less than 2.0 dB typical. The attenuatorbit values are 0.5 (LSB), 1, 2, 4 and 8 dB forA totalattenuation of 15.5 dB. Attenuation accuracy isexcellent at ± 0.15 dB typical with an IIP3 of +50 dBm.Five bit control voltage inputs, toggl
HMC603QS16 - 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 0.7 - 3.8 GHzThe HMC603QS16 & HMC603QS16E are generalpurpose broadband 5-bit positive control GaAs ICdigital attenuators in 16 lead QSOP surface mountplastic packages. Covering 0.7 to 3.8 GHz, the insertionloss is less than 1.9 dB typical. The attenuatorbit values are 0.5 (LSB), 1, 2, 4 and 8 dB forA totalattenuation of 15.5 dB. Attenuation accuracy is excellentat ± 0.15 dB typical with an IIP3 of +50 dBm.Five bit control voltage inputs, toggl
HMC-C001 - 2 - 20 GHz, 15dB Gain, +14dBm P1dB, 2.2dB NFThe HMC-C001 isA GaAs MMIC PHEMT LowNoise Distributed Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 2 and 20 GHz.The self-biased amplifi er provides 15 dB of gain,2 to 3 dB noise fi gure and +14 dBm of outputpower at 1 dB gain compression while requiringa single +12V supply. Gain fl atness is excellentfrom 2 - 18 GHz making the HMC-C001 idealfor EW, ECM RADAR and test equipmentapplications. The wideband amplifi er
HMC-C002 - 2 - 20 GHz, 14dB Gain, +18dBm P1dB, 2dB NFThe HMC-C002 isA GaAs MMIC PHEMTLow Noise Distributed Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 2 and 20 GHz. Theself-biased amplifi er provides 13 dB of gain, 2 to3 dB noise fi gure and up to +18 dBm of outputpower at 1 dB gain compression while requiringa single +12V supply. Gain fl atness is excellentfrom 2 - 18 GHz making the HMC-C002 idealfor EW, ECM RADAR and test equipmentapplications. The wideband amplif
HMC-C003 - 2 - 20 GHz, 15dB Gain, +26dBm P1dB, 4dB NFThe HMC-C003 isA GaAs MMIC PHEMTDistributed Power Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 2 and 20 GHz. Theself-biased amplifi er provides 15 dB of gain, +30dBm output IP3 and up to +26 dBm of outputpower at 1 dB gain compression while requiringa single +12V supply. Gain fl atness is excellentfrom 2 - 18 GHz making the HMC-C003 idealfor EW, ECM RADAR and test equipmentapplications. The wideband amplifi er I/Os
HMC-C004 - 10 MHz - 20 GHz, 16dB Gain, +23dBm P1dB, 3dB NFThe HMC-C004 isA GaAs MMIC PHEMTDistributed Driver Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 10 MHz and 20GHz. The self-biased amplifi er provides 15 dBof gain, 3 to 4 dB noise fi gure and +24 dBm ofsaturated output power while requiringA single+12V supply. Gain fl atness is excellent at ± 0.5dB as well as ± 2 deg deviation from linear phasefrom 0.01 to 10 GHz making the HMC-C004ideal for OC192 fi ber opti
HMC-C005 - 0.5 -18 GHz, Divide-by-2, -150 dBc/Hz SSB Phase Noise@100kHz offset The HMC-C005 isA low noise Divide-by-2 StaticDivider utilizing InGaP GaAs HBT technologypackaged inA miniature, hermetic module withreplacable SMA connectors. This device operatesfrom 0.5 to 18 GHz input frequency from asingle +5.0V DC supply. The low additive SSBphase noise of -150 dBc/Hz at 100 kHz offsethelps the user maintain excellent system noiseperformance.
HMC-C006 - 0.5 -18 GHz, Divide-by-4, -150 dBc/Hz SSB Phase Noise@100kHz offsetThe HMC-C006 isA low noise Divide-by-4 StaticDivider utilizing InGaP GaAs HBT technologypackaged inA miniature, hermetic module withreplacable SMA connectors. This device operatesfrom 0.5 to 18 GHz input frequency from asingle +5.0V DC supply. The low additive SSBphase noise of -150 dBc/Hz at 100 kHz offsethelps the user maintain excellent system noiseperformance.Ultra Low SSB Phase Noise: -150 dBc/HzVery Wide BandwidthOutput Power: -4 dBm
HMC-C007 - 0.5 -18 GHz, Divide-by-8, -150 dBc/Hz SSB Phase Noise@100kHz offsetThe HMC-C007 isA low noise Divide-by-8 StaticDivider utilizing InGaP GaAs HBT technologypackaged inA miniature, hermetic module withreplacable SMA connectors. This device operatesfrom 0.5 to 18 GHz input frequency from asingle +5.0V DC supply. The low additive SSBphase noise of -150 dBc/Hz at 100 kHz offsethelps the user maintain excellent system noiseperformance.Ultra Low SSB Phase Noise: -150 dBc/HzVery Wide BandwidthOutput Power: -4 dBm
HMC-C008 - 15 Watt Power Amplifier Module for Wireless Infrastructure & ATE 1.8 - 2.2 GHz, 42dB Gain, +34.5dBm W-CDMA Output Power
HMC-C009 - GaAs MMIC I/Q MIXER MODULE 4.0 - 8.5 GHzThe HMC-C009 isA passive I /Q MMIC mixer housedinA miniature hermetic module which can be usedas either an Image Reject Mixer orA Single SidebandUpconverter. The module utilizes two standardHittite double balanced mixer cells andA 90 degreehybrid fabricated onA GaAs MESFET process. ThisMMIC based module isA more reliable and consistentalternative to hybrid style I/Q Mixers and SingleSideband Converter assemblies. The module featuresremovable SMA connectors which
HMC-C010 - Module, 6 - 16 GHz, 8dB Ins. Loss, 800-450 Degree Phase RangeThe HMC-C010 is an Analog Phase Shifter whichis controlled via an analog control voltage from 0 to+5V. The HMC-C010 providesA continuously variablephase shift of 0 to 800 degrees at 6 GHz, and 0to 450 degrees at 16 GHz, with consistent insertionloss versus phase shift. The phase shift is monotonicwith respect to control voltage. The control port has amodulation bandwidth of 50 MHz. The low insertionloss and extremely robust packaging enable this
HMC-C011 - DC - 20 GHz, +23dBm P1dB, CMOS Control & 1.3 nSec Fast Switching The HMC-C011 isA general purpose broadband highisolation non-refl ective GaAs MESFET SPDT switchhoused inA miniature hermetic module with fi eldreplaceable SMA connectors. Covering DC to 20GHz, the switch offers high isolation and low insertionloss. The switch features >45 dB isolation up to 5 GHzand >35 dB isolation up to 20 GHz. CMOS interfaceallowsA single positive +5V bias voltage at very lowDC currents.
HMC-C012 - 10 WATT POWER AMPLIFIER MODULE, 400 - 1000 MHzThe HMC-C012 isA 10 Watt Power Amplifi er...
HMC-C013 - 10 WATT POWER AMPLIFIER MODULE, 800 - 2000 MHzThe HMC-C013 isA 10 Watt Power Amplifi er...
HMC-C014 - GaAs MMIC FUNDAMENTAL MIXER MODULE, 16 - 32 GHzThe HMC-C014 isA general purpose passive doublebalancedmixer housed inA miniature hermeticmodule that can be used as an upconverter ordownconverter between 16 and 32 GHz. This mixerrequires no external components or matchingcircuitry. The HMC-C014 provides excellent LO toRF and LO to IF suppression due to optimized balunstructures. The mixer operates with LO drive levelsfrom +9 dBm to +15 dBm and requires no DC Bias.The HMC-C014 may also be used asA Bi-Phase
HMC-C015 - GaAs MMIC DOUBLE BALANCED MIXER MODULE, 24 - 38 GHzThe HMC-C015 isA general purpose double-balancedmixer housed inA miniature hermetic module whichcan be used as an upconverter or downconverterbetween 24 and 38 GHz. This mixer requires noexternal components or matching circuitry. TheHMC-C015 provides excellent, LO to RF, and LO toIF suppression due to optimized balun structures. Themixer operates with LO drive levels from +11 to +15dBm and requires no DC bias. The HMC-C015 mayalso be used asA Bi-Phase Mo
HMC-C026 - Wideband High Gain Power Amplifier Module, 2 - 20 GHz
HMC-C027 - Typical ApplicationsThe HMC-C027 Wideband LNA is ideal for:• Telecom Infrastructure• Microwave Radio & VSAT• Military & Space• Test Instrumentation• Fiber Optics]FeaturesFunctional DiagramThe HMC-C027 isA GaAs MMIC PHEMT Low NoiseAmplifi er inA miniature, hermetic module whichoperates between 29 and 36 GHz. This high dynamicrange amplifi er module provides 20 dB of gain, 2.9dB noise fi gure and up to +22 dBm of output IP3 froma single +3V supply. The wideband amplifi er I/Os areinternally matched to 50 Oh
MAX5953A - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
MAX5953AUTM+ - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
MAX5953AUTM+T - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
MAX5953BUTM+ - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
MAX5953BUTM+T - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w