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Электронный компонент: ADABC1616

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A-Data
ADABC1608
Revision History
Revision 1 ( Dec. 2001 )
1.Fister release.
Revision 2 ( Apr. 2002 )
1. Changed module current specification.
2. Changed
Pin
Assignment.
3.
Changed AC Characteristics.
4.
Changed typo size on module PCB in package dimensions.




























Rev 2 April, 2002
1
A-Data
ADABC1608
PC-133 SDRAM Unbuffered DIMM
16Mx64bits SDRAM DIMM based on 16Mx8, 4Bank, 4K Refresh, 3.3V SDRAM
General Description
The ADABC1608 is 16Mx64 bits Synchronous DRAM
Modules, The modules are composed of eight 16Mx8
bits CMOS Synchronous DRAMs in TSOP-II 400mil
54pin package and one 2Kbit EEPROM in 8pin
TSSOP(TSOP) package on a 168pin glassepoxy
printed circuit board.
The A-Data is a Dual In-line Memory Module and is
intended for mounting onto 168-pins edge connector
sockets. Fully synchronous operation referenced to
the positive edge of the clock. All inputs and outputs
are synchronized with the rising edge of the clock.
The data paths are internally pipelined to achieve very
high bandwidth.
Features
PC-133 support
Auto refresh and self refresh
4096 refresh cycles / 64ms
Single 3.30.3V power supply
All device pins are compatible with LVTTL
interface
Data mask function by DQM
Serial Presence Detect with EEPROM
Module bank :one physical bank
PCB : B6986RAB,Height (28.00mm),single
sided component, Four layers
Ordering Information.
Part No.
Frequency
Bank
Ref.
Package
ADABC1608
133Mhz
4 Banks
4K
TSOP II

Pin Assignment
FRONT SIDE
BACK SIDE
PIN NAME PIN
NAME
PIN
NAME
PIN NAME PIN NAME PIN NAME PIN NAME
PIN
NAME
1 VSS 22 *CB1 43 VSS 64
VSS
85
VSS 106 *CB5 127 VSS 148 VSS
2 DQ0 23 VSS 44 DU 65 DQ21 86 DQ32 107 VSS 128 CKE0
149
DQ53
3 DQ1 24 NC 45 /CS2 66 DQ22 87 DQ33 108
NC 129 */CS3 150 DQ54
4 DQ2 25 NC 46
DQM2
67 DQ23 88 DQ34 109
NC 130 DQM6
151
DQ55
5 DQ3 26 VDD 47 DQM3 68
VSS
89 DQ35 110 VDD 131 DQM7
152 VSS
6 VDD 27 /WE 48 DU 69 DQ24 90
VDD 111 /CAS 132 *A13
153
DQ56
7 DQ4 28 DQM0 49 VDD 70 DQ25 91 DQ36 112 DQM4 133 VDD 154 DQ57
8 DQ5 29 DQM1 50 NC 71 DQ26 92 DQ37 113 DQM5 134
NC 155 DQ58
9 DQ6 30 /CS0 51 NC 72 DQ27 93 DQ38 114 */CS1 135
NC 156 DQ59
10 DQ7 31 DU 52 *CB2 73
VDD
94 DQ39 115 /RAS 136 *CB6 157 VDD
11 DQ8 32 VSS 53 *CB3 74 DQ28 95 DQ40 116 VSS 137 *CB7 158
DQ60
12 VSS 33 A0 54 VSS 75 DQ29 96
VSS 117
A1 138 VSS 159
DQ61
13 DQ9 34 A2 55 DQ16 76 DQ30 97 DQ41 118
A3 139 DQ48
160
DQ62
14 DQ10 35 A4 56 DQ17 77 DQ31 98 DQ42 119
A5 140 DQ49 161 DQ63
15 DQ11 36 A6 57 DQ18 78
VSS
99 DQ43 120
A7 141 DQ50 162 VSS
16 DQ12 37 A8 58 DQ19 79
CK2 100 DQ44 121
A9 142 DQ51 163 *CK3
17 DQ13 38 A10/AP 59 VDD 80
NC 101 DQ45 122 BA0 143 VDD 164 NC
18 VDD 39 BA1 60 DQ20 81
WP
102 VDD 123
A11
144 DQ52 165
**SA0
19 DQ14 40 VDD 61 NC 82 *SDA 103 DQ46 124 VCC 145
NC 166 **SA1
20 DQ15 41 VDD 62 *VREF 83
*SCL 104 DQ47 125 *CK1 146 *VREF 167 **SA2
21 *CB0 42 CK0 63 *CKE1 84
VDD 105 *CB4 126 *A12 147
NC 168 VDD
* These pins are not used in this module.
** These pins should be NC in the system which does not support SPD.
Rev 2 April, 2002
2
A-Data
ADABC1608

Pin Description
PIN NAME
FUNCTION
CK0,CK2 System Clock
Active on the positive edge to sample all inputs.
CKE0 Clock
Enable
Masks system clock to freeze operation from the next clock cycle. CKE
should be enabled at least on cycle prior new command. Disable input
buffers for power down in standby
/CS0,/CS2 Chip Select
Disables or Enables device operation by masking or enabling all input
except CK, CKE and L(U)DQM
A0~A11 Address
Row / Column address are multiplexed on the same pins.
BA0~BA1 Banks Select
Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
DQ0~DQ63 Data
Data inputs / outputs are multiplexed on the same pins.
DQM0~7 Data Mask
Makes data output Hi-Z,
/RAS
Row Address Strobe
Latches row addresses on the positive edge of the CLK with /RAS low
/CAS
Column Address Strobe
Latches Column addresses on the positive edge of the CLK with /CAS low
/WE
Write Enable
Enables write operation and row recharge.
VDD/VSS Power Supply/Ground
Power and Ground for the input buffers and the core logic.
SDA
Serial data I/O
EEPROM serial data I/O
SCL
Serial clock
EEPROM clock input
SA0~2
Address in EEPROM
EEPROM address input
WP
Write Protect for EEPROM
Write Protect for Serial Presence Detect on DIMM
NC
No Connection
This pin is recommended to be left No Connection on the device.
Rev 2 April, 2002
3
A-Data
ADABC1608

Block Diagram
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
D4
D6
D7
D3
D2
D1
D0
D5
DQM
/CS
/CS
/CS
/CS
/CS
/CS
/CS
/CS2
/CS0
/CS
DQM
DQM
DQM
DQM
DQM
DQM
DQM
DQM0
DQM1
DQM1
DQM1
DQM7
DQM6
DQM5
DQM4
/RAS
VSS
SCL
SPD
47K Ohms
SA0 SA1 SA2
A0 A1 A2
SDA
WP
VCC
/WE
/CAS
/RAS : D0 ~D7
/WE : D0 ~D7
/CAS : D0 ~D7
A0~A11
BA0/BA1:D0~D7
BA0/BA1
A0~A11:D0~D7
D0~D7
D0~D7
CK : 2 SDRAMs
CK : 2 SDRAMs
CK : 2 SDRAMs
CK : 2 SDRAMs
CKE : D0~D7
CKE0
CK2
CK1
CK3
CK0
3.3 pF
3.3 pF
10 Ohm
10 Ohm
10 Ohm
10 Ohm
Rev 2 April, 2002
4
A-Data
ADABC1608

Absolute Maximum Ratings
Parameter Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
out
-1.0
~
4.6
V
Voltage on VDD supply relative to Vss
V
DD
, V
DDQ
-1.0
~
4.6
V
Storage temperature
T
STG
-55 ~ +150
Power dissipation
P
D
8
W
Short circuit current
I
OS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Condition
Voltage referenced to Vss = 0V, T
A
= 0 to 70
Parameter Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
, V
DDQ
3.0 3.3 3.6
V
Input logic high voltage
V
IH
2.0 3.0
V
DD
+0.3 V
1
Input logic low voltage
V
IL
-0.3 0 0.8
V 2
Output logic high voltage
V
OH
2.4 -
- V
I
OH
=-2mA
Output logic low voltage
V
OL
- - 0.4
V
I
OL
=2mA
Input leakage current
I
IL
-5 - 5
uA
3
Output leakage current
I
OL
-5 - 5
uA
4
Note : 1. V
IH
(max)=4.6V AC for pulse width 10ns acceptable.
2.V
IL
(min)=-1.5V AC for pulse width 10ns acceptable.
3.Any
input
0V
V
IN
V
DD
+ 0.3V, all other pins are not under test = 0V.
4.Dout is disabled, 0V V
OUT
V
DD
.
AC Operating Condition
Voltage referenced to Vss = 0V, T
A
= 0 to 70
Parameter Symbol
Value
Unit
Note
AC input high / low level voltage
V
IH
/ V
IL
2.4 / 0.4
V
Input timing measurement reference level voltage
Vtrip
1.4
V
Input rise / fall time
TR / tF
1
Ns
Output timing measurement reference level
Voutfef
1.4
V
Output load capacitance for access time measurement
CL
50
pF
2
Note: 1. 3.15V V
DD
3.6V
2. Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF). For details,
refer to AC/DC output load circuit.
Rev 2 April, 2002
5
A-Data
ADABC1608

Capacitance
TA=25, f-=1Mhz, VDD=3.3V
Parameter Pin
Symbol
Min
Max
Unit
CLK Cl1
25
40
pF
Input capacitance
A0~A11,BA0,BA1,CKE,/CS,/RAS,
/CAS,/WE,DQM
Cl2 40
55
pF
Data input / output capacitance DQM
CI/O
5
15
pF
Output load circuit
V
OH
(DC) = 2.4V,I
OH
= -2mA
V
OL
(DC) = 0.4V,I
OL
= 2mA
3.3 V
1200 ohms
870 ohms
50 pF
Output

DC Characteristics I
Parameter Symbol
Min
Max
Unit
Note
Input leakage current
I
LI
-1
1
uA
1
Output leakage current
I
LO
-1
1
uA
2
Output high voltage
V
OH
2.4
-
V
I
OH
= -4mA
Output low voltage
V
OL
-
0.4
V
I
OL
= 4mA
Note : 1.V
IN
= 0 TO 3.6V, All other pins are not tested under V
IN
= 0V.
2.D
OUT
is disabled, V
OUT
= 0 to 3.6.
Rev 2 April, 2002
6
A-Data
ADABC1608
DC Characteristics II
Parameter Symbol
Test
condition
Speed
Unit
Note
Operating Current
IDD1
Burst length=1, One bank active
tRCtRC(min),I
OL
=0mA
700 mA
1
IDD2P
CKEV
IL
(max), tCK=min
16
Precharge standby
current in power
down mode
IDD2PS CKEV
IL
(max), tCK=
16
mA
IDD2N
CKEV
IH
(min), /CSV
IH
(min),
tCK=min input signals are
changed one time during 2clks.
All other pins VDD-0.2V or
0.2V
160
Precharge standby
current in Non power
down mode
IDD2NS
CKEV
IH
(min), tCK=
Input signals are stable.
80
mA
IDD3P
CKEV
IL
(max), tCK=min
60
Active standby
current in power
down mode
IDD3PS CKEV
IL
(max), tCK=
60
mA
IDD3N
CKEV
IH
(min), /CSV
IH
(min),
tCK=min input signals are
changed one time during 2clks.
All other pins VDD-0.2V or
0.2V
320
Active standby
current in Non power
down mode
IDD3NS
CKEV
IH
(min), tCK=
Input signals are stable.
320
mA
Burst mode operating
current
IDD4
t
CK
t
CK
(min),I
OL
=0 mA
All banks active
800 mA
1
Auto refresh current IDD5
tRRCtRRC(min), All banks
active
1,920 mA
2
Self refresh current
IDD6
CKE0.2V
16 mA
Note: 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output
open.
2. Min. of tRRC is shown at AC characteristics.
Rev 2 April, 2002
7
A-Data
ADABC1608
AC Characteristics
ADABC1608
Parameter Symbol
Min Max
Unit Note
/CAS Latency = 3
tCK3
7.5
System clock
Cycle time
/CAS Latency = 2
tCK2
10
1000 ns
Clock high pulse width
tCHW
2.5
ns
1
Clock low pulse width
tCLW
2.5
ns
1
/CAS Latency = 3
tAC3
5.4
Access time form
clock
/CAS Latency = 2
tAC2
6
ns 2
Operation tRC
65
/RAS cycle time
Auto Refresh
tRRC
65
ns
/RAS to /CAS delay
tRCD
20
ns
/RAS active time
tRAS
45
100K
ns
/RAS precharge time
tRP
20
ns
/RAS to /RAS bank active delay
tRRD
15
ns
/CAS to /CAS delay
tCCD
1
CLK
Write command to data in delay
tWTL
0
CLK
Data in to precharge command
tDPL
2
CLK
Data in active command
tDAL
5
CLK
DQM to data out Hi-Z
tDQZ
2
CLK
DQM to data in mask
tDQM
0
CLK
Data out hold time
tOH
2.7
ns
Data input setup time
tDS
1.5
ns
1
Data input hold time
tDH
0.8
ns
1
Address setup time
tAS
1.5
ns
1
Address hold time
tAH
0.8
ns
1
CKE setup time
tCKS
1.5
ns
1
CKE hold time
tCKH
0.8
ns
1
Command setup time
tCS
1.5
ns
1
Command hold time
tCH
0.8
ns
1
CLK to data output in low Z-time
tOLZ
1
ns
MRS to new command
tMRD
2
CLK
Power down exit time
tPDE
1
CLK
Self refresh exit time
tSRE
1
CLK
3
Refresh time
tREF
64
ms
Note : 1. Assume tR / tF (input rise and fall time) is 1 ns.
2. Access times to be measured with input signals of 1v / ns edge rate.
3.A new command can be given tRRC after self refresh exit.
Rev 2 April, 2002
8
A-Data
ADABC1608

Command Truth-Table
Command CKEn-1
CKEn
/CS
/RAS
/CAS
/WE
DQM
ADDR
A10/AP
BA
Mode
Register
Set
H X L L L L X
OP
code
H X X X
No Operation
H
X
L H H H
X X
Bank Active
H
X
L
L
H
H
X
RA
V
Read
L
Read with Auto Precharge
H X L H L H X CA
H
V
Write
L
Write with Auto Precharge
H X L H L L X CA
H
V
Precharge All Bank
H X
Precharge select Bank
H X L L H L X X
L V
Burst
Stop
H X L H H L X
X
DQM H
X
V
X
Auto
Refresh
H H L L L H X
X
Entry
H L L L L H X
H X X X
Self Refresh
Exit L H
L H H H
X
X
H X X X
Entry
H L
L H H H
X
H X X X
Precharge
Power down
Exit L H
L H H H
X
X
H X X X
Entry
H L
L V V V
X
Clock Suspend
Exit L H
X
X
X
Rev 2 April, 2002
9
A-Data
ADABC1608
Package Information
0.100 Max
0.050 0.0039
(1.270 0.10)
0.250
(6.350)
Detail A
0.123 0.005
(3.125 0.125)
0.250
(6.350)
Detail B
0.123 0.005
(3.125 0.125)
0.079 0.004
(2.000 0.100)
0.079 0.004
(2.000 0.100)
0.
20
0 M
i
n
(5
.0
8
Mi
n
)
(2.54 Max)
5.250
5.014
Units : Inches (Millimeters)
R 0.079
(R 2.000)
0.250
(6.350)
1.450
(36.830)
2.150
(54.61)
0.
118
(3
.0
0
0
)
0.350
0.
10
0 M
i
n
(2
.5
4
0
Mi
n
)
0.
700
(
1
7.
78
0
)
.118DIA 0.004
(3.000DIA 0.100)
(8.890)
A
B
C
0.250
(6.350)
.450
(11.430)
4.550
(115.57)
0.157 0.004
(4.000 0.100)
0.089
(2.26)
(127.350)
(133.350)
1.
10
2
(
2
8.
000
)
0.118
(3.000)
0.050
0.008 0.006
(0.200 0.150)
(1.270)
0.
10
0
M
i
n
(2
.
5
4
0
Mi
n
)
Detail C
0.039 0.002
(1.000 0.050)
Rev 2 April, 2002
10