Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Dynamic dv/dt Rating
BV
DSS
600/675V
Repetitive Avalanche Rated
R
DS(ON)
1.2
Fast Switching
I
D
7A
Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
V
I
D
@T
C
=25
Continuous Drain Current, V
GS
@ 10V
A
I
D
@T
C
=100
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25
Total Power Dissipation
W
W/
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
STG
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
3.4
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
65
/W
Data & specifications subject to change without notice
200218033
AP07N70CF/I
140
-55 to 150
Parameter
7
Parameter
Rating
600/675
- /A
7
4.4
Storage Temperature Range
-55 to 150
18
37
Linear Derating Factor
0.3
7
AP07N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220FM & TO-220CFM type provide high blocking voltage to
overcome voltage surge and sag in the toughest power system with the
best combination of fast switching,ruggedized design and cost-
effectiveness.
The TO-220FM & TO-220CFM package is universally preferred for all
commercial-industrial applications. The device is suited for switch mode
power supplies ,DC-AC converters and high current high speed switching
circuits.
30
G
D S
TO-220FM(F)
G
D
S
G
D
S
TO-220CFM(I)
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA / -
600
-
-
V
V
GS
=0V, I
D
=1mA / A
675
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.6
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=3.5A
-
-
1.2
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2
-
4
V
g
fs
Forward Transconductance
V
DS
=50V, I
D
=3.5A
-
4.5
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=670V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=480V
,
V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
3
I
D
=7A
-
32
-
nC
Q
gs
Gate-Source Charge
V
DS
=480V
-
8.6
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=10V
-
9
-
nC
t
d(on)
Turn-on Delay Time
3
V
DD
=300V
-
17
-
ns
t
r
Rise Time
I
D
=7A
-
15
-
ns
t
d(off)
Turn-off Delay Time
R
G
=10
,
V
GS
=10V
-
35
-
ns
t
f
Fall Time
R
D
=43
-
18
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
2075
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
120
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
8
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.5V
-
-
7
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
18
A
V
SD
Forward On Voltage
3
T
j
=25
, I
S
=7A, V
GS
=0V
-
-
1.5
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=5mH , R
G
=25
, I
AS
=7A.
3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP07N70CF(/I)-
X
: X Denote BV
DSS
Grade
Blank = BV
DSS
600V
A
= BV
DSS
675V
AP07N70CF/I
30V
1
00
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
AP07N70CF/I
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rm
a
lize
d
R
DS
(ON)
V
G
=10V
I
D
=3.5A
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rm
a
lize
d
BV
DS
S
(V)
0
2
4
6
8
10
12
0
5
10
15
20
25
V
DS
, Drain-to-Source Voltage (V)
I
D
, D
r
a
i
n C
u
r
r
e
nt (
A
)
T
C
=25
o
C
V
G
=6.0V
V
G
=5.5V
V
G
=5.0V
V
G
=4.0V
V
G
=10V
0
2
4
6
8
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
V
G
=6.0V
V
G
=5.5V
V
G
=5.0V
V
G
=4.0V
V
G
=10V
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP07N70CF/I
0
1
2
3
4
5
6
7
8
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
0
10
20
30
40
0
50
100
150
Tc , Case Temperature(
o
C)
P
D
(W
)
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
0.1
1
10
100
1
10
100
1000
10000
V
DS
(V)
I
D
(A
)
T
c
=25
o
C
Single Pulse
10us
100us
1ms
10ms
100ms
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP07N70CF/I
0
1
2
3
4
5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS
(
t
h
)
(V
)
1
100
10000
1
5
9
13
17
21
25
29
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
40
45
50
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
=7A
V
DS
=320V
V
DS
=400V
V
DS
=480V
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
(V)
I
S
(A
)
T
j
= 150
o
C
T
j
= 25
o
C
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