Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
SO-8 similar area footprint and pin assignment
BV
DSS
30V
Low Gate Charge
R
DS(ON)
12m
Fast Switching Speed
I
D
47A
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
E
AS
Single Pulse Avalanche Energy
4
mJ
I
AR
Avalanche Current
A
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3.4
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
85
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
37
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.29
29
24
Continuous Drain Current, V
GS
@ 10V
30
Pulsed Drain Current
1
120
Gate-Source Voltage
20
Continuous Drain Current, V
GS
@ 10V
47
Parameter
Rating
Drain-Source Voltage
30
200408053-1/4
AP1203GMA
Pb Free Plating Product
G
D
S
S
S
S G
D
APAK-5
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=20A
-
-
12
m
V
GS
=4.5V, I
D
=15A
-
-
25
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
2
V
DS
=10V, I
D
=10A
-
25
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=24V ,V
GS
=0V
-
-
250
uA
I
GSS
Gate-Source Leakage
V
GS
= 20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=20A
-
13
20
nC
Q
gs
Gate-Source Charge
V
DS
=20V
-
3.3
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
8
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
8
-
ns
t
r
Rise Time
I
D
=20A
-
65
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
20
-
ns
t
f
Fall Time
R
D
=0.75
-
5
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
1040 1660
pF
C
oss
Output Capacitance
V
DS
=25V
-
240
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
165
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.9
2.9
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
V
SD
Forward On Voltage
2
I
S
=45A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
2
I
S
=20A, V
GS
=0V,
-
24
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
14
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
4.Starting T
j
=25
o
C , V
DD
=25V , L=0.1mH , R
G
=25
2/4
AP1203GMA
AP1203GMA
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0
20
40
60
80
100
0.0
2.0
4.0
6.0
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0
20
40
60
80
100
0.0
2.0
4.0
6.0
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0.4
0.8
1.2
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
=20A
V
G
=10V
0.3
0.6
0.9
1.2
1.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
N
o
rmalize
d
V
GS(t
h)
(V
)
10
15
20
25
30
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
= 15 A
T
C
=25
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP1203GMA
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
3
6
9
12
0
10
20
30
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
V
DS
= 13 V
V
DS
= 16 V
V
DS
=20V
I
D
=20A
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
100us
1ms
10ms
100ms
DC
T
C
=25
o
C
Single Pulse
0
20
40
60
80
0
2
4
6
8
V
GS
, Gate-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
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