Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low Gate Charge
BV
DSS
30V
Simple Drive Requirement
R
DS(ON)
52m
Fast Switching
I
D
20A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
4.0
/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
110
/W
Data & specifications subject to change without notice
200227032
Thermal Data
Parameter
Pulsed Drain Current
1
53
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.25
Storage Temperature Range
Total Power Dissipation
31
-55 to 150
Continuous Drain Current, V
GS
@ 10V
20
Continuous Drain Current, V
GS
@ 10V
13
Drain-Source Voltage
30
Gate-Source Voltage
AP20N03H/J
Parameter
Rating
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP20N03J) is available for low-profile applications.
20
G
D
S
TO-251(J)
G D
S
TO-252(H)
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.037
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=10A
-
-
52
m
V
GS
=4.5V, I
D
=8A
-
-
85
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=24V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=10A
-
6.1
-
nC
Q
gs
Gate-Source Charge
V
DS
= 24V
-
1.4
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
4.9
-
ns
t
r
Rise Time
I
D
=20A
-
29
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
14.3
-
ns
t
f
Fall Time
R
D
=0.75
-
3.6
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
290
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
160
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.3V
-
-
20
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
53
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=20A, V
GS
=0V
-
-
1.3
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP20N03H/J
20V
100
AP20N03H/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rma
l
i
z
e
d
R
DS
(
ON)
V
G
=10V
I
D
=10A
35
40
45
50
55
60
65
70
75
80
85
3
4
5
6
7
8
9
10
11
V
GS
(V)
R
DS
(
ON)
(m
)
I
D
= 1 0A
T
C
=25
o
C
0
10
20
30
40
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
V
G
=3.0V
V
G
=4.0V
V
G
=6.0V
V
G
=8.0V
V
G
=10V
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
V
G
=3.0V
V
G
=4.0V
V
G
=6.0V
V
G
=8.0V
V
G
=10V
AP20N03H/J
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
0
5
10
15
20
25
30
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
0
10
20
30
40
0
50
100
150
T
c
,Case Temperature (
o
C)
P
D
(W
)
1
10
100
1
10
100
V
DS
(V)
I
D
(A
)
T
c
=25
o
C
Single Pulse
10us
100us
1ms
10ms
100ms
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
AP20N03H/J
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
1
2
3
-50
0
50
100
150
T
j
, Junction Temperature(
o
C)
V
GS
(
t
h
)
(V
)
0
2
4
6
8
10
12
0
2
4
6
8
10
12
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
V
DS
=24V
V
DS
=20V
V
DS
=16V
I
D
=10A
10
100
1000
1
6
11
16
21
26
31
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
(V)
I
S
(A
)
T
j
= 25
o
C
T
j
= 150
o
C
AP20N03H/J
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
5V
Q
GS
Q
GD
Q
G
Charge
0.5x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
10 V
D
G
S
V
DS
V
GS
R
G
R
D
0.8 x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
D
G
S
V
DS
V
GS
I
D
I
G
1~ 3 mA
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