Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Capable of 2.5V gate drive
BV
DSS
20V
Small package outline
R
DS(ON)
85m
Surface mount package
I
D
3.2A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
90
/W
Data and specifications subject to change without notice
Pb Free Plating Product
200114054
AP2302GN
Parameter
Rating
Drain-Source Voltage
20
Gate-Source Voltage
12
Continuous Drain Current
3
, V
GS
@ 4.5V
3.2
Continuous Drain Current
3
, V
GS
@ 4.5V
2.6
Pulsed Drain Current
1,2
10
Total Power Dissipation
1.38
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.01
Thermal Data
Parameter
Storage Temperature Range
G
D
S
D
G
S
SOT-23
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.1
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V, I
D
=3.6A
-
-
85
m
V
GS
=2.5V, I
D
=3.1A
-
-
115
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.5
-
1.2
V
g
fs
Forward Transconductance
V
DS
=5V, I
D
=3.6A
-
6
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=20V ,V
GS
=0V
-
-
10
uA
I
GSS
Gate-Source Leakage
V
GS
=12V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=3.6A
-
4.4
-
nC
Q
gs
Gate-Source Charge
V
DS
=10V
-
0.6
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
1.9
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
5.2
-
ns
t
r
Rise Time
I
D
=3.6A
-
37
-
ns
t
d(off)
Turn-off Delay Time
R
G
=6
,
V
GS
=5V
-
15
-
ns
t
f
Fall Time
R
D
=2.8
-
5.7
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
145
-
pF
C
oss
Output Capacitance
V
DS
=10V
-
100
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.2V
-
-
1
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
10
A
V
SD
Forward On Voltage
2
I
S
=1.6A, V
GS
=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270
/W when mounted on min. copper pad.
AP2302GN
AP2302GN
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
60
70
80
90
100
2
3
4
5
V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
= 3.1 A
T
A
=25
o
C
0
1
2
3
4
5
6
7
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
=150
o
C
V
G
=2.0V
4.5V
3.5V
3.0V
2.5V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
V
G
=4.5V
I
D
=3.6A
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
=25
o
C
V
G
=2.0V
4.5V
3.5V
3.0V
2.5V
0.1
1.0
10.0
0.1
0.5
0.9
1.3
V
SD
, Source-to-Drain Voltage (V)
I
F
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.2
0.6
1.0
1.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS(
t
h)
(V
)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP2302GN
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
T
A
=25
o
C
Single Pulse
1s
1ms
10ms
100ms
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270
/W
t
T
0
2
4
6
8
10
12
0
2
4
6
8
10
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
=3.6A
V
DS
=4.5V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
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