Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Capable of 2.5V gate drive
BV
DSS
30V
Small outline package
R
DS(ON)
720m
RoHS Compliant
I
D
1A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
90
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
1.38
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.01
Continuous Drain Current
3
, V
GS
@ 4.5V
0.8
Pulsed Drain Current
1,2
2
Gate-Source Voltage
16
Continuous Drain Current
3
, V
GS
@ 4.5V
1
Parameter
Rating
Drain-Source Voltage
30
200811051-1/4
AP2318GEN
Pb Free Plating Product
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.04
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4V, I
D
=500mA
-
-
720
m
V
GS
=2.5V, I
D
=200mA
-
-
1200
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.4
-
1.3
V
g
fs
Forward Transconductance
V
DS
=4V, I
D
=500mA
-
725
-
mS
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V ,V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=16V
-
-
30
uA
Q
g
Total Gate Charge
2
I
D
=1A
-
1.1
1.8
nC
Q
gs
Gate-Source Charge
V
DS
=25V
-
0.4
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
0.4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
17
-
ns
t
r
Rise Time
I
D
=1A
-
44
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=5V
-
45
-
ns
t
f
Fall Time
R
D
=15
-
55
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
30
48
pF
C
oss
Output Capacitance
V
DS
=25V
-
12
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
11
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1A, V
GS
=0V
-
-
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270
/W when mounted on min. copper pad.
2/4
AP2318GEN
AP2318GEN
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
300
1300
2300
3300
1
2
3
4
5
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
=200mA
T
A
=25
o
C
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
=500mA
V
G
=4V
0.0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0.0
0.5
1.0
1.5
2.0
2.5
0.0
2.0
4.0
6.0
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 25
o
C
5.0V
4.5V
4.0 V
2.5V
V
G
= 1 .5V
0.0
0.5
1.0
1.5
2.0
2.5
0.0
2.0
4.0
6.0
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 1 5 0
o
C
5.0V
4.5V
4.0 V
2.5V
V
G
= 1 .5V
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4/4
AP2318GEN
10
100
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0
3
6
9
12
0.0
0.5
1.0
1.5
2.0
2.5
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
=1A
V
DS
=15V
V
DS
=20V
V
DS
=25V
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270
/W
t
T
0.01
0.1
1
10
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
10ms
100ms
1s
DC
0.0
0.5
1.0
1.5
2.0
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
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