Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Capable of 2.5V gate drive
BV
DSS
30V
Lower on-resistance
R
DS(ON)
27m
Surface mount package
I
D
5.9A
RoHS compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
90
/W
Data and specifications subject to change without notice
201031051-1/4
AP2428GEY
Pb Free Plating Product
Storage Temperature Range
-55 to 150
Operating Junction Temperature Range
-55 to 150
Total Power Dissipation
1.39
Linear Derating Factor
0.01
Continuous Drain Current
3
4.7
Pulsed Drain Current
1
30
Thermal Data
Parameter
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
10
Continuous Drain Current
3
5.9
2928-8
D1
D2
D1
D2
G2
G1
S2
S1
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
S1
G1
D1
S2
G2
D2
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V, I
D
=5A
-
-
27
m
V
GS
=4V, I
D
=5A
-
-
28
m
V
GS
=2.5V, I
D
=3A
-
-
36
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.3
-
1
V
g
fs
Forward Transconductance
V
DS
=5V, I
D
=5A
-
14
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
-
-
10
uA
I
GSS
Gate-Source Leakage
V
GS
=10V
-
-
30
uA
Q
g
Total Gate Charge
2
I
D
=5A
-
11
18
nC
Q
gs
Gate-Source Charge
V
DS
=25V
-
1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
8
-
ns
t
r
Rise Time
I
D
=1A
-
10
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=5V
-
24
-
ns
t
f
Fall Time
R
D
=15
-
7
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
610
980
pF
C
oss
Output Capacitance
V
DS
=25V
-
210
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
R
g
Gate Resistance
f=1.0MHz
-
2.2
3.3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.1A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
I
S
=5A,
V
GS
=0
V
,
-
24
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board , t <5sec ; 180
/W at steady state.
AP2428GEY
AP2428GEY
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0
10
20
30
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
V
G
= 1.5 V
5.0 V
4.5 V
3.5 V
2.5 V
T
A
=25
o
C
0
10
20
30
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 150
o
C
5.0 V
4.5 V
3.5 V
2.5 V
V
G
= 1.5 V
15
55
95
135
175
215
0
1
2
3
4
5
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
= 3 A
T
A
=25
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
=5A
V
G
=4.5V
0.0
0.6
1.2
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP2428GEY
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
3
6
9
12
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
= 5 A
V
DS
= 15 V
V
DS
= 20 V
V
DS
= 25 V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
DC
0
10
20
30
0
1
2
3
V
GS
, Gate-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
ja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=180
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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