Advanced Power
N-CHANNEL INSULATED GATE
Electronics Corp.
BIPOLAR TRANSISTOR
High Input Impedance
V
CE
High Pick Current Capability
I
CP
4.5V Gate Drive
S
S
S
S
trobe Flash Applications
Absolute Maximum Ratings
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Min.
Typ.
Max. Units
I
GES
-
-
10
uA
I
CES
-
-
10
uA
V
CE(sat)
-
6
8
V
V
GE(th)
0.35
-
1.2
V
Q
g
-
64.5
-
nC
Q
ge
-
7
-
nC
Q
gc
-
30
-
nC
t
d(on)
-
11.5
-
ns
t
r
-
24.5
-
ns
t
d(off)
-
150
-
ns
t
f
-
3.3
-
s
C
ies
-
2227
-
pF
C
oes
-
200
-
pF
C
res
-
79
-
pF
Rth
JA
1
-
-
50
/W
Notes:
1.Surface mounted on 1 in
2
copper pad of
FR4 board ; 125
/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
V
2.5
200507032
V
CC
=225V
V
Gate-Emitter Voltage
Gate-Emitter Charge
Operating Junction Temperature Range
-55 to 150
-55 to 150
W
Parameter
Storage Temperature Range
Pulsed Collector Current
Parameter
Maximum Power Dissipation
V
GE
I
CP
V
GEP
Pulsed Gate-Emitter Voltage
P
D
@T
C
=25
1
450
6
150
8
AP25G45EM
Symbol
V
CE
450V
150A
Rating
Collector-Emitter Voltage
Units
V
A
Reverse Transfer Capacitance
V
CE
=450V, V
GE
=0V
V
GE
=4.5V, I
CP
=150A (Pulsed)
V
CE
=V
GE
, I
C
=250uA
I
C
=50A
V
CE
=360V
V
GE
=5V
V
CE
=25V
Test Conditions
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Leakage Current
Collector-Emitter Leakage Current (Tj=25
)
V
GE
= 6V, V
CE
=0V
T
STG
Turn-off Delay Time
V
GE
=0V
I
C
=50A
R
G
=25
Rise Time
T
J
Gate-Collector Charge
Turn-on Delay Time
Thermal Resistance Junction-Ambient
V
GE
=5V
Fall Time
Input Capacitance
Output Capacitance
f=1.0MHz
G
C
E
E
E
E
G
C
C
C
C
SO-8
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Collector Current v.s.
Fig 4. Collector- Emitter Saturation Voltage
Gate-Emitter Voltage
v.s. Junction Temperature
Fig 5. Gate Threshold Voltage
Fig 6. Minimum Gate Drive Area
v.s. Junction Temperature
AP25G45EM
0
20
40
60
80
100
120
140
160
180
0
2
4
6
8
10
V
CE
, Collector-Emitter Voltage (V)
I
D
, Drain Current (A)
4.5V
4.0V
T
A
=25
o
C
VG=1.0V
5.0V
3.0V
2.0V
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
V
CE
, Collector-Emitter Voltage (V)
I
C
, C
olle
c
tor C
u
rre
n
t
(
A
)
4.5V
4.0V
T
A
=150
o
C
VG=1.0V
5.0V
3.0V
2.0V
0
2
4
6
8
10
0
20
40
60
80
100
120
140
160
Junction Temperature (
o
C)
V
CE(s
a
t
)
,
S
atu
ration
V
oltage
(
V
)
V
GE
=4.5V
I
C
=130A
I
C
=50A
I
C
=100A
0
0.3
0.6
0.9
1.2
1.5
-50
0
50
100
150
Junction Temperature (
o
C )
V
GE
(
t
h)
(V)
0
40
80
120
160
200
0
1
2
3
4
5
6
7
V
GE
, Gate-to-Emitter Voltage (V)
I
CP
, Pe
ak C
olle
c
tor C
u
rre
n
t
(
A
)
0
40
80
120
160
0
1
2
3
4
5
6
V
GE
, Cate-Emitter Voltage (V)
I
C ,
C
olle
c
tor C
u
rre
n
t
(
A
)
V
CE
=4.5V
25
70
125
T
A
=150
Fig 7. Typical Capacitance Characterisitics Fig 8. Gate Charge Waveform
Fig 9. Switching Time Test Circuit
Fig 10. Switching Time Waveform
Fig 11. Gate Charge Test Circuit
Fig 12. Application Test Circuit
AP25G45EM
t
d(on)
t
r
t
d(off)
t
f
V
CE
V
GE
10%
90%
300V
TO THE
OSCILLOSCOPE
-
+
C
G
V
CE
V
GE
I
C
I
G
1~3mA
E
V
CM
V
CM
= 300V
C
M
=100uF
I
CP
= 150A
V
G
=5V
+
_
C
M
R
G
V
trig
IGBT
V
G
Flasher
10
100
1000
10000
1
5
9
13
17
21
25
29
VCE, Collector-Emitter Voltage (V)
C
apac
itan
c
e
(
p
F
)
f=1.0MHz
Cies
Coes
Cres
TO THE
OSCILLOSCOPE
-
+
5V
C
G
E
V
CE
V
GE
R
G
R
C
225 V
0
1
2
3
4
5
6
7
8
9
10
11
12
0
30
60
90
120
150
Q
G
, Gate Charge (nC)
V
GE
, Gate
-
E
m
itte
r V
oltage
(
V
)
I
CP
=50A
V
CC
=360V
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