Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low Gate Charge
BV
DSS
50V
Small Package Outline
R
DS(ON)
1.8
Surface Mount Package
I
D
520mA
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
mA
I
D
@T
A
=70
mA
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
150
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
0.8
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.006
Continuous Drain Current
3
, V
GS
@ 10V
410
Pulsed Drain Current
1,2
1.5
Gate-Source Voltage
20
Continuous Drain Current
3
, V
GS
@ 10V
520
Parameter
Rating
Drain-Source Voltage
50
Pb Free Plating Product
200624051-1/4
AP2622GY
D1
S1
G1
S2
G2
D2
SOT-26
G2
D2
S2
G1
D1
S1
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
50
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.06
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=500mA
-
-
1.8
V
GS
=4.5V, I
D
=200mA
-
-
3.2
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=500mA
-
600
-
mS
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=50V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=40V ,V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
30
uA
Q
g
Total Gate Charge
2
I
D
=500mA
-
1
1.6
nC
Q
gs
Gate-Source Charge
V
DS
=40V
-
0.5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
0.5
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=25V
-
12
-
ns
t
r
Rise Time
I
D
=500mA
-
10
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
56
-
ns
t
f
Fall Time
R
D
=50
-
29
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
32
50
pF
C
oss
Output Capacitance
V
DS
=25V
-
8
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=0.6A, V
GS
=0V
-
-
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board, t<5sec ; 250
/W when mounted on min. copper pad.
2/4
AP2622GY
AP2622GY
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0.0
0.2
0.4
0.6
0.8
1.0
0.0
2.0
4.0
6.0
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
= 3.0 V
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 150
o
C
10V
7.0V
5.0V
4.5V
V
G
= 3.0 V
1.0
1.5
2.0
2.5
3.0
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
= 200m A
T
A
=25
o
C
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
= 500m A
V
G
=10V
0
0.2
0.4
0.6
0
0.4
0.8
1.2
1.6
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.3
0.7
1.1
1.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(t
h)
(V
)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP2622GY
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
4
8
12
16
0
0.5
1
1.5
2
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
= 500m A
V
DS
= 25 V
V
DS
=30V
V
DS
=40V
1
10
100
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.10
1.00
10.00
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=250/W
t
T
0.02
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