Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low Gate Charge
BV
DSS
25V
Simple Drive Requirement
R
DS(ON)
50m
Fast Switching
I
D
16A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
6.4
/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
110
/W
Data & specifications subject to change without notice
AP3302H/J
Parameter
Rating
Drain-Source Voltage
25
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
16
Continuous Drain Current, V
GS
@ 10V
10
Pulsed Drain Current
1
25
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.16
Storage Temperature Range
Total Power Dissipation
20
-55 to 150
200701031
Thermal Data
Parameter
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP3302J) is available for low-profile applications.
20
G
D
S
TO-251(J)
G D
S
TO-252(H)
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
25
-
-
V
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=8A
-
-
50
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2
-
4
V
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=25V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=20V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=10A
-
7.4
13
nC
Q
gs
Gate-Source Charge
V
DS
= 24V
-
2.2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=10V
-
4.2
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
8
-
ns
t
r
Rise Time
I
D
=16A
-
7.4
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
11
-
ns
t
f
Fall Time
R
D
=0.94
-
3
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
164
290
pF
C
oss
Output Capacitance
V
DS
=25V
-
158
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
62
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=16A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
I
S
=16A,
V
GS
=0
V
,
-
29
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
21
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP3302H/J
20V
100
AP3302H/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
5
10
15
20
25
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
c
=25
o
C
V
G
=5.0V
7.0V
8.0V
9.0V
10V
0
1
2
3
4
5
6
7
8
9
10
11
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
c
=150
o
C
V
G
=5.0V
7.0V
10V
9.0V
8.0V
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V
SD
, Source-to-Drain Voltage (V)
I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
2
2.5
3
3.5
4
4.5
5
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
V
GS(
t
h)
(V)
0
10
20
30
0
50
100
150
T
j
, Junction Temperature (
o
C)
P
D
(W)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
R
DS(
ON)
I
D
=20A
V
G
=10V
AP3302H/J
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
10V
Q
GS
Q
GD
Q
G
Charge
0
5
10
15
20
25
0
2
4
6
8
10
12
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
=10A
V
DS
=20V
V
DS
=16V
V
DS
=12V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (p
F
)
f=1.0MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
T
c
=25
o
C
Single Pulse
10ms
100ms
1s
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
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