Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Drive Requirement
BV
DSS
60V
Small Package Outline
R
DS(ON)
90m
Surface Mount Device
I
D
3A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
90
/W
Data and specifications subject to change without notice
Pb Free Plating Product
200910041
AP2310GN
Parameter
Rating
Drain-Source Voltage
60
Gate-Source Voltage
20
Continuous Drain Current
3
, V
GS
@ 4.5V
3
Continuous Drain Current
3
, V
GS
@ 4.5V
2.3
Pulsed Drain Current
1,2
10
Total Power Dissipation
1.38
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.01
Thermal Data
Parameter
Storage Temperature Range
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
60
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.05
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=3A
-
-
90
m
V
GS
=4.5V, I
D
=2A
-
-
120
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=5V, I
D
=3A
-
5
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=60V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=48V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=3A
-
6
10
nC
Q
gs
Gate-Source Charge
V
DS
=48V
-
1.6
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
3
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=30V
-
6
-
ns
t
r
Rise Time
I
D
=1A
-
5
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
16
-
ns
t
f
Fall Time
R
D
=30
-
3
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
490
780
pF
C
oss
Output Capacitance
V
DS
=25V
-
55
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.2A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
I
S
=3A, V
GS
=0V,
-
25
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
26
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270
/W when mounted on min. copper pad.
AP2310GN
AP2310GN
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
= 3.0 V
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
= 150
o
C
10V
7.0V
5.0V
4.5V
V
G
= 3.0 V
75
81
87
93
99
105
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
= 2 A
T
A
=25
o
C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
= 3 A
V
G
=10V
0
1
2
3
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.4
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(
t
h)
(V
)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP2310GN
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
2
4
6
8
10
12
14
0
3
6
9
12
15
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
= 3 A
V
DS
= 30 V
V
DS
=38V
V
DS
=48V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rm
a
lized
T
h
erm
a
l Resp
o
n
se (
R
thja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270
/W
t
T
0.001
0.010
0.100
1.000
10.000
100.000
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
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