Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Drive Requirement
BV
DSS
-35V
Low On-resistance
R
DS(ON)
36m
Fast Switching Characteristic
I
D
-24A
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
/W
Data and specifications subject to change without notice
Pb Free Plating Product
Thermal Data
Parameter
Total Power Dissipation
31.25
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current, V
GS
@ 10V
-15
Pulsed Drain Current
1
80
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
200701052-1/4
AP4415GH/J
Rating
-35
25
-24
0.25
G
D
S
G D
S
TO-252(H)
G
D
S
TO-251(J)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4415GJ) is available for low-profile applications.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-35
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-16A
-
-
36
m
V
GS
=-4.5V, I
D
=-12A
-
-
60
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-16A
-
18
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=25V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=-16A
-
11
18
nC
Q
gs
Gate-Source Charge
V
DS
=-24V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
10
-
ns
t
r
Rise Time
I
D
=-16A
-
52
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-10V
-
20
-
ns
t
f
Fall Time
R
D
=0.94
-
7
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
990
1580
pF
C
oss
Output Capacitance
V
DS
=-25V
-
220
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
150
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-16A, V
GS
=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
2
I
S
=-16A,
V
GS
=0
V
,
-
25
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/4
AP4415GH/J
AP4415GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+08
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
10
20
30
40
50
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain
Cu
rre
n
t
(A)
T
C
= 25
o
C
-10V
-7.0V
-5.0V
-4.5V
V
G
= -3.0 V
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
= - 16 A
V
G
=-10V
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
-
V
GS(
t
h)
(V
)
0.0
1.8
3.5
5.3
7.0
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0
10
20
30
40
50
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain
Cu
rre
n
t
(A)
T
C
= 150
o
C
-10V
-7.0V
-5.0V
-4.5V
V
G
= -3.0 V
25
45
65
85
105
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
= - 12 A
T
C
=25
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP4415GH/J
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
0
10
20
30
40
Q
G
, Total Gate Charge (nC)
-V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
= - 16 A
V
DS
= - 24 V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-I
D
(A
)
T
c
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
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