Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low On-resistance
BV
DSS
-30V
Fast Switching Speed
R
DS(ON)
20m
PDIP-8 Package
I
D
-9A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
50
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Storage Temperature Range
Continuous Drain Current
3
- 5.8
Pulsed Drain Current
1
- 50
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
201114031
AP4435D
Rating
- 30
20
- 9
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
D
D
D
D
S
S
S
G
PDIP-8
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-9A
-
-
20
m
V
GS
=-4.5V, I
D
=-5A
-
-
35
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-9A
-
8.2
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-9.0A
-
26
42
nC
Q
gs
Gate-Source Charge
V
DS
=-24V
-
6
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
16
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
14
-
ns
t
r
Rise Time
I
D
=-1A
-
13
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-10V
-
70
-
ns
t
f
Fall Time
R
D
=15
-
48
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
1330 2100
pF
C
oss
Output Capacitance
V
DS
=-25V
-
580
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
160
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-9.0A, V
GS
=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
I
S
=-9.0A, V
GS
=0V,
-
44
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
70
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on min. copper pad , t <10sec.
AP4435D
20V
100
AP4435D
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
20
40
60
80
100
0
1
2
3
4
5
6
7
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain
Cu
rre
n
t
(A)
T
A
=25
o
C
-10V
-8.0V
-6.0V
-4.5V
V
G
=-4.0V
0
20
40
60
80
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain
Cu
rre
n
t
(A)
T
A
=150
o
C
-10V
-8.0V
-6.0V
-4.5V
V
G
= - 4.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Nor
m
aliz
ed R
DS
(
ON)
V
GS
=-10V
I
D
=-9.0A
1
1.25
1.5
1.75
2
2.25
2.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
GS(
t
h)
(V
)
0
1
2
3
4
5
6
7
8
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
15
20
25
30
35
40
3
5
7
9
11
-V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
= - 5.0 A
T
A
=25
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP4435D
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
10
20
30
40
50
Q
G
, Total Gate Charge (nC)
-V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
=-9.0A
V
DS
=-24V
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-I
D
(A)
1ms
10ms
100ms
1s
DC
T
A
=25
o
C
Single Pulse
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rm
a
lize
d
The
r
m
a
l Re
sp
o
n
se
(R
thja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja=90
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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