Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
Low Gate Charge
N-CH BV
DSS
35V
Fast Switching Speed
R
DS(ON)
25m
PDIP-8 Package
I
D
7A
RoHS Compliant
P-CH BV
DSS
-35V
R
DS(ON)
40m
Description
I
D
-6.1A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel P-channel
V
DS
Drain-Source Voltage
35
-35
V
V
GS
Gate-Source Voltage
20
20
V
I
D
@T
A
=25
Continuous Drain Current
3
7
-6.1
A
I
D
@T
A
=70
Continuous Drain Current
3
5.7
-5
A
I
DM
Pulsed Drain Current
1
30
-30
A
P
D
@T
A
=25
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/
T
STG
Storage Temperature Range
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
Parameter
200621051-1/4
Thermal Data
AP4511GD
Pb Free Plating Product
G2
D2
S2
G1
D1
S1
D1
D1
D2
D2
S1
G1
S2
G2
PDIP-8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
35
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=7A
-
20
25
m
V
GS
=4.5V, I
D
=5A
-
30
37
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=7A
-
9
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=35V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=28V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=7A
-
11
18
nC
Q
gs
Gate-Source Charge
V
DS
=28V
-
3
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
6
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=18V
-
12
-
ns
t
r
Rise Time
I
D
=1A
-
7
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
22
-
ns
t
f
Fall Time
R
D
=18
-
6
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
830
1330
pF
C
oss
Output Capacitance
V
DS
=25V
-
150
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.2
1.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.7A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
2
I
S
=7A, V
GS
=0V
-
18
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
12
-
nC
2/7
AP4511GD
AP4511GD
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-35
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
,I
D
=-1mA
-
-0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-6A
-
35
40
m
V
GS
=-4.5V, I
D
=-4A
-
53
60
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-6A
-
9
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-35V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-28V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=-6A
-
10
16
nC
Q
gs
Gate-Source Charge
V
DS
=-28V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
6
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-18V
-
10
-
ns
t
r
Rise Time
I
D
=-1A
-
6
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,V
GS
=-10V
-
26
-
ns
t
f
Fall Time
R
D
=18
-
7
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
690
1100
pF
C
oss
Output Capacitance
V
DS
=-25V
-
165
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
R
g
Gate Resistance
f=1.0MHz
-
5.2
7.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-1.7A, V
GS
=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
2
I
S
=-6A, V
GS
=0V
-
20
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=-100A/s
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <10sec ; 90
/W when mounted on min. copper pad.
3/7
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
4/7
AP4511GD
0
10
20
30
40
50
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0
2
4
6
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.4
0.8
1.2
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed V
GS
(
t
h
)
(V
)
0
10
20
30
40
50
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
20
40
60
80
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS
(
ON)
(m
)
I
D
= 5 A
T
A
=25
o
C
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed R
DS
(
ON)
I
D
= 7 A
V
G
=10V
AP4511GD
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
4
8
12
16
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
=7A
V
DS
=28V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=90
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
10
20
30
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
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