Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
Simple Drive Requirement
N-CH BV
DSS
60V
Low On-resistance
R
DS(ON)
36m
Fast Switching Performance
I
D
6A
P-CH BV
DSS
-60V
R
DS(ON)
72m
Description
I
D
-4.2A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel P-channel
V
DS
Drain-Source Voltage
60
-60
V
V
GS
Gate-Source Voltage
20
20
V
I
D
@T
A
=25
Continuous Drain Current
3
6
-4.2
A
I
D
@T
A
=70
Continuous Drain Current
3
4.7
-3.3
A
I
DM
Pulsed Drain Current
1
30
-30
A
P
D
@T
A
=25
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/
T
STG
Storage Temperature Range
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
Parameter
200607041
Thermal Data
AP4575M
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1
S1 G1
S2
G2
D1
D1
D2
D2
SO-8
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
60
-
-
V
BV
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25, I
D
=1mA
-
0.04
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=5A
-
-
36
m
V
GS
=4.5V, I
D
=3A
-
-
42
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=5A
-
8
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=60V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=48V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=5A
-
18
29
nC
Q
gs
Gate-Source Charge
V
DS
=48V
-
5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
10
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=30V
-
10
-
ns
t
r
Rise Time
I
D
=1A
-
6
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3,V
GS
=10V
-
32
-
ns
t
f
Fall Time
R
D
=30
-
10
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
1670 2670
pF
C
oss
Output Capacitance
V
DS
=25V
-
160
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
117
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.7A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
2
I
S
=5A, V
GS
=0V
-
34
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
48
-
nC
AP4575M
AP4575M
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-60
-
-
V
BV
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25,I
D
=-1mA
-
-0.04
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-4A
-
-
72
m
V
GS
=-4.5V, I
D
=-3A
-
-
88
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-4A
-
6
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-60V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-48V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=-4A
-
21
34
nC
Q
gs
Gate-Source Charge
V
DS
=-48V
-
5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
9
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-30V
-
12
-
ns
t
r
Rise Time
I
D
=-1A
-
6
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3,V
GS
=-10V
-
82
-
ns
t
f
Fall Time
R
D
=30
-
36
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
1780 2850
pF
C
oss
Output Capacitance
V
DS
=-25V
-
157
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-1.7A, V
GS
=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
2
I
S
=-4A, V
GS
=0V
-
43
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=-100A/s
-
87
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135/W when mounted on min. copper pad.
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP4575M
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0
10
20
30
40
50
0
1
2
3
4
5
6
7
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 1 5 0
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed R
DS
(
ON)
I
D
=5A
V
G
=10V
28
30
32
34
36
38
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS
(
ON)
(m
)
I
D
= 3 A
T
A
=25
o
C
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
N
o
r
m
aliz
ed V
GS
(
t
h
)
(V
)
AP4575M
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
35
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
=5A
V
DS
=48V
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
DC
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