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Электронный компонент: AP6679GI

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Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low Gate Charge
BV
DSS
-30V
Single Drive Requirement
R
DS(ON)
9m
Lower On-resistance
I
D
-48A
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
/W
Data and specifications subject to change without notice
Pb Free Plating Product
200525051-1/4
AP6679GI
Rating
-30
25
-48
0.25
31.3
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
-30
Pulsed Drain Current
1
300
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
Linear Derating Factor
Thermal Data
G
D
S
G D
S
TO-220CFM(I)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
AP6679GI
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-30A
-
-
9
m
V
GS
=-4.5V, I
D
=-24A
-
-
15
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-30A
-
43
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
= 25
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=-30A
-
40
67
nC
Q
gs
Gate-Source Charge
V
DS
=-25V
-
8
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
28
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
15
-
ns
t
r
Rise Time
I
D
=-30A
-
75
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-10V
-
50
-
ns
t
f
Fall Time
R
D
=0.5
-
90
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
3100 4590
pF
C
oss
Output Capacitance
V
DS
=-25V
-
930
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
690
-
pF
R
g
Gate Resistance
f=1.0MHz
-
2.7
4
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-30A, V
GS
=0V
-
-
-1.3
V
t
rr
Reverse Recovery Time
I
S
=-24A, V
GS
=0V,
-
47
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=-100A/s
-
45
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP6679GI
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
5
15
25
35
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
= -24A
T
C
=25
0
70
140
210
280
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current (A)
T
C
=25
o
C
-10V
-8.0V
-6.0V

-4.5V
V
G
=-3.0V
0.4
0.8
1.2
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
-
V
GS(
t
h)
(V)
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
R
DS(
ON)
I
D
=-30A
V
G
=-10V
0
50
100
150
0.0
0.5
1.0
1.5
2.0
2.5
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current (A)
T
C
=150
o
C
-10V
-8.0V
-6.0V
-4.5V
V
G
=-3.0V
AP6679GI
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0
4
8
12
16
0
20
40
60
80
Q
G
, Total Gate Charge (nC)
-V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
= -30A
V
DS
= -25V
1
10
100
1000
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-I
D
(A
)
100us
1ms
10ms
100ms
DC
T
C
=25
o
C
Single Pulse
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse