Advanced Power
P-CHANNEL WITH SCHOTTKY DIODE
Electronics Corp.
POWER MOSFET
Low On-Resistance
BV
DSS
-20V
Fast Switching Characteristic
R
DS(ON)
50m
Included Schottky Diode
I
D
-3.5A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
KA
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
I
F
A
I
FM
A
P
D
@T
A
=25
W
Total Power Dissipation (Schottky)
W
T
STG
Storage Temperature Range
T
J
Operating Junction Temperature Range
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
(MOSFET)
Max.
125
/W
Thermal Resistance Junction-ambient
3
(Schottky)
Max.
125
/W
Data and specifications subject to change without notice
Pulsed Drain Current
1
(MOSFET)
- 30
25
Total Power Dissipation (MOSFET)
1
Average Forward Current (Schottky)
1
Pulsed Forward Current
1
(Schottky)
Continuous Drain Current
3
(MOSFET)
- 3.5
Continuous Drain Current
3
(MOSFET)
- 2.8
-55 to 150
-55 to 125
Parameter
Rating
Drain-Source Voltage (MOSFET and Schottky))
-20
Reverse Voltage (Schottky)
20
Gate-Source Voltage (MOSFET)
12
AP6923O
1
Thermal Data
Parameter
200131025
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
K
A
A
A
D
S
S
G
TSSOP-8
G
D
S
K
A
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-4.5V, I
D
=-3.5A
-
-
50
m
V
GS
=-2.5V, I
D
=-2.7A
-
-
85
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-0.5
-
-
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-3.5A
-
10
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-16V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
= 12V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
= -3.5A
-
15.6
-
nC
Q
gs
Gate-Source Charge
V
DS
= -10V
-
2.1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
= -4.5V
-
5.2
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
= -10V
-
8.2
-
ns
t
r
Rise Time
I
D
= -1A
-
9.4
-
ns
t
d(off)
Turn-off Delay Time
R
G
= 3.3
,
V
GS
= -4.5V
-
66.4
-
ns
t
f
Fall Time
R
D
= 10
-
48
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
660
-
pF
C
oss
Output Capacitance
V
DS
=-20V
-
285
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=-1.2V
-
-
-0.83
A
V
SD
Forward On Voltage
2
I
S
=-0.83A, V
GS
=0V
-
-
-1.2
V
Schottky Characteristics@Tj=25
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
F
Forward Voltage Drop
I
F
=1A
-
-
0.5
V
I
rm
Maximum Reverse Leakage Current
Vr=20V
-
-
100
uA
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 208
/W when mounted on Min. copper pad.
AP6923O
AP6923O
MOSFET
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
20
60
100
140
180
1
2
3
4
5
6
-V
GS
(V)
R
DS(ON)
(m
)
I
D
= -3.5A
T
A
=25
o
C
0
8
16
24
32
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
V
G
=-2.0V
0
6
12
18
24
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=150
o
C
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
V
G
= - 2.0V
0.4
0.7
1.0
1.3
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
=-3.5A
V
G
=-4.5V
0.01
0.1
1
10
0
0.4
0.8
1.2
-V
SD
(V)
-I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.3
0.6
0.9
1.2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
GS(t
h)
(V
)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
SCHOTTKY DIODE
Fig 1. Reverse Leakage Current
Fig 2. Forward Voltage Drop
v.s. Junction Temperature
AP6923O
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
(V)
-I
D
(A
)
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ Ta
R
thja
=208
o
C/W
t
T
0.01
0.05
0.1
0.2
Duty Factor=0.5
Single Pulse
0.02
0
3
6
9
12
15
0
4
8
12
16
20
Q
G
, Total Gate Charge (nC)
-V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
V
DS
=-10V
V
DS
=-15V
V
DS
=-20V
I
D
=-3.5A
100
1000
1
5
9
13
17
21
25
-V
DS
(V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
V
F
- Forward Voltage Drop (V)
I
F
-
Forward Cu
rre
n
t
(
A
)
T
j
= 1 25
o
C
T
j
= 25
o
C
1
10
100
1000
10000
25
50
75
100
125
Junction Temperature (
o
C )
I
rm
-
R
e
v
e
rse
Le
akage
C
u
rre
n
t
(
u
A
)
V
KA
= 20V
V
KA
=10V
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