Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Drive Requirement
BV
DSS
100V
Lower On-resistance
R
DS(ON)
15m
Fast Switching Characteristic
I
D
72A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
0.9
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
/W
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
138
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
1.11
Continuous Drain Current, V
GS
@ 10V
45
Pulsed Drain Current
1
260
Gate-Source Voltage
20
Continuous Drain Current, V
GS
@ 10V
72
Parameter
Rating
Drain-Source Voltage
100
AP75T10S/P
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP75T10P) are available for low-profile applications.
G D
S
TO-263(S)
G
D
S
TO-220(P)
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
100
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25, I
D
=1mA
-
0.09
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=30A
-
-
15
m
V
GS
=4.5V, I
D
=16A
-
-
21
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=30A
-
52
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=100V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=80V ,V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
= 20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=30A
-
69
110.4
nC
Q
gs
Gate-Source Charge
V
DS
=80V
-
12
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
39
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=50V
-
12
-
ns
t
r
Rise Time
I
D
=30A
-
75
-
ns
t
d(off)
Turn-off Delay Time
R
G
=10,V
GS
=10V
-
220
-
ns
t
f
Fall Time
R
D
=1.6
-
250
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
5690
9100
pF
C
oss
Output Capacitance
V
DS
=25V
-
540
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
605
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.1
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
V
SD
Forward On Voltage
2
I
S
=30A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
2
I
S
=30A, V
GS
=0V
-
51
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
74
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP75T10S/P
AP75T10S/P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
50
100
150
200
250
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
C
= 25
o
C
10V
6.0 V
5.0V
4.5V
V
G
=3.0V
0
20
40
60
80
100
120
0
1
2
3
4
5
6
7
8
9
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
10V
6.0V
5.0V
4.5V
V
G
=3.0V
T
C
= 150
o
C
11
12
13
14
15
16
17
3
5
7
9
11
V
GS
Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
=16A
T
C
=25
o
C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
=30A
V
G
=10V
0
15
30
45
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0
0.5
1
1.5
2
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(
t
h)
(V
)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP75T10S/P
0
2
4
6
8
10
12
0
20
40
60
80
100
120
140
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
V
DS
= 50 V
V
DS
= 64 V
V
DS
= 80 V
I
D
= 30 A
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
,Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
T
c
=25
o
C
Single Pulse
1ms
10ms
100ms
DC
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