Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Lower gate charge
BV
DSS
20V
Capable of 2.5V gate drive
R
DS(ON)
50m
Single Drive Requirement
I
D
4A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
100
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
1.25
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.01
Continuous Drain Current, V
GS
@ 4.5V
3
2.5
Pulsed Drain Current
1
12
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
3
4
Parameter
Rating
Drain-Source Voltage
20
Pb Free Plating Product
201224031
AP9452GG
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
16
G
D
S
D
G
D
S
SOT-89
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=4A
-
-
38
m
V
GS
=4.5V, I
D
=4A
-
-
50
m
V
GS
=2.5V, I
D
=3A
-
-
80
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.7
-
1.5
V
g
fs
Forward Transconductance
2
V
DS
=5V, I
D
=3A
-
10
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=16V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=4A
-
6
10
nC
Q
gs
Gate-Source Charge
V
DS
=16V
-
1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
2
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
8
-
ns
t
r
Rise Time
I
D
=1A
-
9
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=5V
-
13
-
ns
t
f
Fall Time
R
D
=10
-
3
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
360
570
pF
C
oss
Output Capacitance
V
DS
=20V
-
80
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
I
S
=4A,
V
GS
=0
V
,
-
18
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
10
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mount on FR4 board, t < 10s.
AP9452GG
16V
100
AP9452GG
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
10
20
30
40
50
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
=25
o
C
4.5V
3.5V
2.5V
V
GS
=1.5V
0
10
20
30
40
0
1
2
3
4
5
6
7
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
=150
o
C
4.5V
3.5V
2.5V
V
GS
=1.5V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
V
GS
=4.5V
I
D
=4A
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V
SD
, Source -to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.2
0.45
0.7
0.95
1.2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
GS(
t
h)
(V
)
25
35
45
55
65
1
3
5
7
9
11
V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
= 4 A
T
A
=25
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP9452GG
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
16
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
= 4 A
V
DS
=16V
V
DS
=12V
V
DS
=10V
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Rthja=100
/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
Ciss
Coss
Crss
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