Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low on-resistance
BV
DSS
18V
Capable of 2.5V gate drive
R
DS(ON)
25m
Low drive current
I
D
35A
Single Drive Requirement
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=125
A
I
DM
A
P
D
@T
C
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
2.5
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
/W
Data and specifications subject to change without notice
200227032
AP9916H/J
Parameter
Rating
Drain-Source Voltage
18
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
35
Continuous Drain Current, V
GS
@ 4.5V
16
Pulsed Drain Current
1
90
Total Power Dissipation
50
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.4
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
12
G D
S
TO-252(H)
G
D
S
TO-251(J)
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
18
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
-
-
25
m
V
GS
=2.5V, I
D
=5.2A
-
-
40
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.5
-
1
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=6A
-
18
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=18V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=18V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=18A
-
17.5
-
nC
Q
gs
Gate-Source Charge
V
DS
=18V
-
1.2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=5V
-
7.9
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
7.3
-
ns
t
r
Rise Time
I
D
=18A
-
98
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=5V
-
25.6
-
ns
t
f
Fall Time
R
D
=0.56
-
98
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
527
-
pF
C
oss
Output Capacitance
V
DS
=18V
-
258
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
112
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.3V
-
-
35
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
90
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=35A, V
GS
=0V
-
-
1.3
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9916H/J
12V
100
AP9916H/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0
20
40
60
80
100
0
1
2
3
4
5
6
7
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
V
G
=1.5V
V
G
=2.5V
V
G
=4.5V
V
G
=3.5V
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
V
G
=1.5V
V
G
=2.5V
V
G
=3.5V
V
G
=4.5V
18
20
22
24
26
28
30
1
2
3
4
5
6
V
GS
(V)
R
DS
(
ON)
(m
)
I
D
= 6 A
T
C
=25
o
C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rma
l
i
z
e
d
R
DS
(
ON)
V
G
=4.5V
I
D
=6A
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9916H/J
0
10
20
30
40
50
60
0
50
100
150
T
c
, Case Temperature (
o
C)
P
D
(W
)
0.1
1
10
100
1000
0.1
1
10
100
V
DS
(V)
I
D
(A
)
T
c
=25
o
C
Single Pulse
10us
1ms
10ms
100ms
100us
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
AP9916H/J
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.2
0.45
0.7
0.95
1.2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
GS
(t
h
)
(V)
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V
SD
(V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
10
100
1000
1
5
9
13
17
21
25
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
40
45
Q
G
, Total Gate Charge (nC)
V
GS
, Ga
te to
So
urce Vo
lta
g
e
(
V
)
I
D
=18A
V
DS
=15V
V
DS
=18V
V
DS
=10V
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