Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low on-resistance
BV
DSS
16V
Capable of 2.5V gate drive
R
DS(ON)
27m
Surface mount package
I
D
7A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
AP9926EM-A
Parameter
Rating
Drain-Source Voltage
16
Gate-Source Voltage
12
Continuous Drain Current
3
7
Continuous Drain Current
3
5.6
Pulsed Drain Current
1
20
Total Power Dissipation
2
Linear Derating Factor
0.016
Storage Temperature Range
-55 to 150
Operating Junction Temperature Range
-55 to 150
Thermal Data
Parameter
201112041
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
S1
G1
D1
S2
G2
D2
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
16
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.01
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V, I
D
=6A
-
-
27
m
V
GS
=2.5V, I
D
=5A
-
-
40
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
-
-
1.2
V
g
fs
Forward Transconductance
V
DS
=5V, I
D
=6A
-
13
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=16V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=12V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=12V
-
-
10
uA
Q
g
Total Gate Charge
2
I
D
=6A
-
14
22
nC
Q
gs
Gate-Source Charge
V
DS
=10V
-
1.4
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
7
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
10
-
ns
t
r
Rise Time
I
D
=1A
-
13
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
26
-
ns
t
f
Fall Time
R
D
=10
-
8
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
420
670
pF
C
oss
Output Capacitance
V
DS
=16V
-
280
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
R
g
Gate Resistance
f=1.0MHz
-
3
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.7A, V
GS
=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135
/W when mounted on Min. copper pad.
AP9926EM-A
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP9926EM-A
0
10
20
30
40
50
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
=25
o
C
5.0V
4.5V
3.5V
2.5V
V
G
=1.5V
0
10
20
30
40
50
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
= 150
o
C
5.0V
4.5V
3.5V
2.5V
V
G
=1.5V
20
30
40
50
1
2
3
4
5
V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
= 5 A
T
A
=25
o
C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
=6A
V
G
= 4.5V
0
2
4
6
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
0.4
0.8
1.2
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(
t
h)
(V
)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP9926EM-A
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
4
8
12
16
0
5
10
15
20
25
30
35
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
V
DS
= 6 V
V
DS
= 8 V
V
DS
=1 0 V
I
D
= 6 A
100
1000
1
4
7
10
13
16
19
V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0
5
10
15
20
0
1
2
3
4
V
GS
, Gate-to-Source Voltage (V)
I
D
, Drain Current (A)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
ja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
1ms
10ms
100ms
1s
10s
DC
T
A
=25
o
C
Single Pulse
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