Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low on-resistance
BV
DSS
20V
Capable of 2.5V gate drive
R
DS(ON)
30m
Low drive current
I
D
6A
Surface mount package
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Continuous Drain Current
3
4.8
Pulsed Drain Current
1
20
Gate-Source Voltage
12
Continuous Drain Current
3
6
Parameter
Rating
Drain-Source Voltage
20
Pb Free Plating Product
20112002
AP9926GEM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
S1
G1
D1
S2
G2
D2
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.1
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V, I
D
=6A
-
-
30
m
V
GS
=2.5V, I
D
=5.2A
-
-
45
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.5
-
-
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=6A
-
15.6
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=20V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
= 10V
-
-
10
uA
Q
g
Total Gate Charge
2
I
D
=6A
-
12.5
-
nC
Q
gs
Gate-Source Charge
V
DS
=20V
-
1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=5V
-
6.5
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
5
-
ns
t
r
Rise Time
I
D
=1A
-
9
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=5V
-
26.2
-
ns
t
f
Fall Time
R
D
=10
-
6.8
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
355
-
pF
C
oss
Output Capacitance
V
DS
=20V
-
190
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V,V
S
=1.2V
-
-
1.67
A
V
SD
Forward On Voltage
2
T
j
=25
,I
S
=1.7A,V
GS
=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 135
/W when mounted on Min. copper pad.
AP9926GEM
AP9926GEM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
25
30
35
40
45
2
3
4
5
6
V
GS
(V)
R
DS
(
ON)
(m
)
I
D
=6A
T
C
=25
o
C
0
6
12
18
24
0
0.5
1
1.5
2
2.5
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
V
GS
=2.0V
4.5V
4.0V
3.5V
3.0V
2.5V
0.6
0.9
1.2
1.5
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rma
l
i
z
e
d
R
DS
(
ON)
V
GS
=4.5V
I
D
=6A
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
V
GS
=2.0V
4.5V
4.0V
3.5V
3.0V
2.5V
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9926GEM
0
2
4
6
8
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
0
0.5
1
1.5
2
2.5
0
30
60
90
120
150
T
c
, Case Temperature (
o
C)
P
D
(W
)
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rma
l
i
z
ed
Therma
l
R
e
sp
o
n
se (R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
(V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
AP9926GEM
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.3
0.6
0.9
1.2
1.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
GS
(
t
h
)
(V
)
0
3
6
9
12
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
V
GS
, Ga
te to
So
urce Vo
lta
g
e
(
V
)
V
DS
=10V
V
DS
=15V
V
DS
=20V
I
D
=6A
10
100
1000
1
8
15
22
29
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V
SD
(V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
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