Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low on-resistance
BV
DSS
20V
Capable of 2.5V gate drive
R
DS(ON)
28m
Low drive current
I
D
4.6A
Surface mount package
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
125
/W
Data and specifications subject to change without notice
20071902
AP9926O
Parameter
Rating
Drain-Source Voltage
20
Gate-Source Voltage
Continuous Drain Current
3
4.6
Continuous Drain Current
3
3.7
Pulsed Drain Current
1
20
Total Power Dissipation
1
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.008
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
8
G2
D2
S2
G1
D1
S1
D2
S2
S2
G2
D1
S1
S1
G1
TSSOP-8
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.1
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V, I
D
=4A
-
23
28
m
V
GS
=2.5V, I
D
=2A
-
-
40
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.5
-
-
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=4.6A
-
9.7
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=20V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=4.6A
-
12.5
-
nC
Q
gs
Gate-Source Charge
V
DS
=20V
-
1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=5V
-
6.5
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
7
-
ns
t
r
Rise Time
I
D
=1A
-
14.5
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=5V
-
19
-
ns
t
f
Fall Time
R
D
=10
-
12
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
355
-
pF
C
oss
Output Capacitance
V
DS
=20V
-
190
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V,V
S
=1.2V
-
-
0.83
A
V
SD
Forward On Voltage
2
T
j
=25
,I
S
=1.25A,V
GS
=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 208
/W when mounted on Min. copper pad.
AP9926O
8V
100
AP9926O
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
25
30
35
40
45
1
2
3
4
5
6
V
GS
(V)
R
DS
(
ON)
(m
)
T
C
=25
o
C
I
D
= 4A
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
4.5V
4.0V
3.5V
3.0V
2.5V
V
GS
=2.0V
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
4.5V
4.0V
3.5V
3.0V
2.5V
V
GS
=2.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rma
l
i
z
e
d
R
DS
(
ON)
V
GS
=4.5V
I
D
= 4A
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9926O
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
(V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=208
o
C/W
t
T
0.02
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0
50
100
150
T
c
, Case Temperature (
o
C)
P
D
(W
)
0
1
2
3
4
5
6
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
AP9926O
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
2
4
6
8
10
12
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
V
GS
, Ga
te to
So
urce Vo
lta
g
e
(
V
)
V
DS
=10V
V
DS
=15V
V
DS
=20V
I
D
=4.6A
10
100
1000
1
5
9
13
17
21
25
29
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V
SD
(V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
Junction Temperature (
o
C )
V
GS(
t
h)
(V
)
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