Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low On-resistance
BV
DSS
40V
Single Drive Requirement
R
DS(ON)
20m
Surface Mount Package
I
D
32A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=100
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
4.5
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
34.7
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.27
Continuous Drain Current, V
GS
@ 10V
20
Pulsed Drain Current
1
150
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
32
Parameter
Rating
Drain-Source Voltage
40
201028031
AP9962H/J
20
G
D
S
G D
S
TO-252(H)
G
D
S
TO-251(J)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9962J) are available for low-profile applications.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
40
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.1
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=20A
-
-
20
m
V
GS
=4.5V, I
D
=16A
-
-
30
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=20A
-
19
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=40V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=32V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=20A
-
13
21
nC
Q
gs
Gate-Source Charge
V
DS
=32V
-
5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
8
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=20V
-
8
-
ns
t
r
Rise Time
I
D
=20A
-
38
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
20
-
ns
t
f
Fall Time
R
D
=1.0
-
5
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
1170 1870
pF
C
oss
Output Capacitance
V
DS
=25V
-
180
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=32A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
I
S
=20A,
V
GS
=0
V
,
-
24
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
AP9962H/J
20V
100
AP9962H/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
=20A
V
G
=10V
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=25
o
C
10V
8.0V
6.0V
4.5V
V
G
=3.0V
12
16
20
24
28
32
36
3
4
5
6
7
8
9
10
11
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
=20A
T
C
=25
o
C
0
20
40
60
80
100
120
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=150
o
C
V
G
=3.0V
10V
8.0V
6.0V
4.5V
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS(t
h)
(V
)
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP9962H/J
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
Voltage
(V)
V
DS
=20V
V
DS
=25V
V
DS
=32V
I
D
=20A
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
10
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.1
1
10
100
1000
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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