Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low Gate Charge
BV
DSS
20V
Capable of 2.5V gate drive
R
DS(ON)
25m
Single Drive Requirement
I
D
25A
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
5
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
/W
Data and specifications subject to change without notice
200908052-1/4
AP9T16GH/J
Pb Free Plating Product
Parameter
Rating
Drain-Source Voltage
20
Gate-Source Voltage
16
Continuous Drain Current, V
GS
@ 4.5V
25
Continuous Drain Current, V
GS
@ 4.5V
16
Pulsed Drain Current
1
90
Total Power Dissipation
25
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.2
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G D
S
TO-252(H)
G
D
S
TO-251(J)
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25, I
D
=1mA
-
0.01
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
-
-
25
m
V
GS
=2.5V, I
D
=5.2A
-
-
40
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.5
-
1.5
V
g
fs
Forward Transconductance
V
DS
=5V, I
D
=18A
-
19
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=16V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=16V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=18A
-
10
16
nC
Q
gs
Gate-Source Charge
V
DS
=16V
-
3
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
5
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
10
-
ns
t
r
Rise Time
I
D
=18A
-
98
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3,V
GS
=5V
-
18
-
ns
t
f
Fall Time
R
D
=0.56
-
6
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
870
1390
pF
C
oss
Output Capacitance
V
DS
=20V
-
160
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.38
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=18A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
2
I
S
=18A,
V
GS
=0
V
,
-
19
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
10
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9T16GH/J
AP9T16GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rm
a
lized
R
DS(ON)
I
D
=6A
V
G
=4.5V
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
No
rm
a
lized
V
GS(t
h)
(V
)
0
20
40
60
80
100
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
5.0V
4.5V
3.5V
2.5V
V
G
=1.5V
T
C
=25
o
C
0
20
40
60
80
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n Current (
A
)
T
C
= 150
o
C
5.0V
4.5V
3.5V
2.5V
V
G
=1.5V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
12
17
22
27
32
37
42
0
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
= 5.2 A
T
C
=25
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP9T16GH/J
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
=18A
V
DS
=10V
V
DS
=12V
V
DS
=16V
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
c
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
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