Advanced Analog Technology, Inc.
Advanced Analog Technology, Inc
.
Page 1 of 25
V2.0
AAT8641 Series
Product information presented is current as of publication date. Details are subject to change without notice
ONE-CELL LI-ION BATTERY PROTECTION IC
FEATURES
Ideal for One-Cell Rechargeable Li-Ion
Battery Packs
High Accuracy Voltage Detection
Low Current Consumption:
3A Supply Current (Typical)
0.1A Shutdown Current
3-Level Over Current Detection:
Over-Current Level 1 /Over Current Level 2
/ Short Circuit
Wide Operating Temperature Range:
40
-
o
C to +85
o
C
Small SOT25 Package
PIN CONFIGURATION
OUT
C
OUT
D
VN
GND
VIEW
TOP
GENERAL DESCRIPTION
The AAT8641 series are designed for the
protection of one-cell rechargeable Li-Ion battery
pack against over charge, over discharge, over
current and short circuit. They use CMOS
process to provide high accuracy voltage
detection while consuming relatively low amount
of current.
Each of the AAT8641 devices incorporates
voltage comparators, bandgap reference voltage
generator, signal delay circuit, short circuit
detector, and digital control circuit.
During the charge process, when the battery
voltage is charged to a value higher than
1
C
V
(Over Charge Threshold Voltage), the output of
out
C
pin switches to low level, i.e., the VN pin
level. The output of
out
C
pin will switch to high
level when the battery voltage is at a level lower
than
2
C
V (Over Charge Release Voltage), or
when the charger is disconnected from the battery
pack and the battery voltage level is in between
1
C
V and
2
C
V .
During the discharge process, when the battery
voltage drops to a value lower than
1
D
V
(Over
Discharge Threshold Voltage), the output of
out
D
pin switches to low level immediately after
the internal delay time elapses. The output of
out
D
pin will switch to high level when the
battery voltage is at a level higher than
2
D
V
Advanced Analog Technology, Inc.
Advanced Analog Technology, Inc
.
Page 2 of 25
V2.0
AAT8641 Series
(Over-Discharge Release Voltage).
Over Current Level 1 Voltage (
1
OC
V
) is used to
monitor the amount of discharge current. If the
discharge current is high enough to cause VN pin
voltage to be greater than
1
OC
V
, the output of
out
D
pin will switch to low level after a delay
time t
OC1
. If the load is removed from battery
pack, the output of
out
D
will change to high
again.
The mechanism of short circuit protection is
exactly the same as discharge current. If the short
circuit current is high enough to cause VN pin
voltage to be greater than
short
V
, the output of
out
D
pin would fall to low level after a delay
time
short
t
, and the output of
out
D
level will
change to high when the load is removed from
battery pack.
BLOCK DIAGRAM:
out
D
out
C
Advanced Analog Technology, Inc.
Advanced Analog Technology, Inc
.
Page 3 of 25
V2.0
AAT8641 Series
PIN DESCRIPTION
PIN NO
NAME I/O
DESCRIPTION
1 VN
I
Voltage
Detection
Pin Between VN and GND
2
DD
V
I
Power Supply Input Pin
3 GND
Ground
4
out
D
O Discharge Control Pin which Connects to External MOSFET Gate
5
out
C
O Charge Control Pin which Connects to External MOSFET Gate.
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS SYMBOL VALUE UNIT
Supply Voltage
DD
V
3
.
0
-
to 8.0
V
VN Pin Input Voltage
VN
V
0
.
20
V
DD
-
to
3
.
0
V
DD
+
V
out
D
Pin Output Voltage
Dout
V
3
.
0
-
to
3
.
0
V
DD
+
V
out
C
Pin Output Voltage
Cout
V
3
.
0
V
VN
-
to
3
.
0
V
DD
+
V
Power Dissipation
d
P
150 mW
Operating Temperature Range
C
T
40
-
to +85
o
C
Storage Temperature Range
storage
T
40
-
to +125
o
C
RECOMMENDED OPERATING CONDITIONS
Test
condition
Min
Max
Unit
Supply Voltage,
DD
V
Voltage Defined as
DD
V
to GND
1.5 7.0 V
out
D
Output Voltage
GND
DD
V
V
out
C
Output Voltage
VN
DD
V
V
OPERATION VOLTAGE AND OPERATION CURRENT
Parameter
Test Condition
Min Typ Max Unit
Supply Current at Normal Operation
Mode
DD
V
=3.3V; VN=0V; GND=0V
3.0
5.0
A
Standby Current at Power Down Mode -
-
0.1
A
Operation Voltage between
DD
V
and
VN
1.5
20.0
V
Advanced Analog Technology, Inc.
Advanced Analog Technology, Inc
.
Page 4 of 25
V2.0
AAT8641 Series
AAT8641A DETECTION VOLTAGE AND DELAY TIME (25)
PARAMETER
SYMBOL
TEST CONDITION
Min Typ Max Unit
Over Charge Threshold Voltage
1
C
V
Detect Rising Edge of Supply
Voltage
4.300 4.325 4.350 V
Over Charge Release Voltage
2
C
V
Detect Falling Edge of Supply
Voltage
30
.
0
V
1
C
-
25
.
0
V
1
C
-
20
.
0
V
1
C
-
V
Over Discharge Threshold
Voltage
1
D
V
Detect Falling Edge of Supply
Voltage
2.420 2.500 2.580 V
Over Discharge Release Voltage
2
D
V
Detect Rising Edge of Supply
Voltage
V
D1
+0.3
V
D1
+0.4 V
D1
+0.5
V
Over Charge Delay Time
1
C
t
V
6
.
3
V
DD
=
to 4.5V
0.700 1.000 1.300 s
Over Discharge Delay Time
1
D
t
V
6
.
3
V
DD
=
to 2.4V
87.5 125.0 162.5 ms
Over Current Level 1 Detection
Voltage
1
OC
V
Detect Rising Edge of "VN" Pin
Voltage (
out
D
Response with
1
OC
t
Delay Time)
130 150 170 mV
Over Current Level 2 Detection
Voltage
2
OC
V
Detect Rising Edge of "VN"
Pin Voltage (
out
D
Response
with
2
OC
t
Delay Time)
400 500 600 mV
Short Circuit Detection Voltage
short
V
V
0
.
3
V
DD
=
, Detect Rising Edge
of "VN" Pin Voltage (
out
D
Response with
short
t
Delay
Time)
7
.
1
V
DD
-
3
.
1
V
DD
-
9
.
0
V
DD
-
V
Over Current Level 1 Detection
Delay Time
1
OC
t
V
0
.
3
V
DD
=
5.6 8.0 10.4 ms
Over Current Level 2 Detection
Delay Time
2
OC
t
Room Temp.
Low or High Temp.
V
0
.
3
V
DD
=
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
short
t
V
0
.
3
V
DD
=
10 50
s
Charger Detection Voltage
CHR
V
Detect Rising Edge of "
out
D
"
Pin Voltage (when V
D1
V
DD
V
D2
)
0
.
2
-
3
.
1
-
6
.
0
-
V
out
C
High Level Resistance
COH
R
DD
V
=3.5V;
out
C
=3.0V;VN=0V
1 2 10
k
out
C
Low Level Resistance
COL
R
DD
V
=4.5V;
150 602 2,380
k
out
D
High Level Resistance
DOH
R
DD
V
=3.5V;
out
D
=3.0V;VN=0V
2.5 5.0 10.0
k
out
D
Low Level Resistance
DOL
R
DD
V
=1.8V;
out
D
=0.5V;VN=1.8V
2.5 5.0 10.0
k
Internal Resistance between VN
and
DD
V
VND
R
DD
V
=1.8V; VN=0V
100 300 900
k
Internal Resistance between VN
and GND
VNG
R
DD
V
=3.5V; VN=3.5V
50 150 300
k
Advanced Analog Technology, Inc.
Advanced Analog Technology, Inc
.
Page 5 of 25
V2.0
AAT8641 Series
AAT8641B DETECTION VOLTAGE AND DELAY TIME (25)
PARAMETER
SYMBOL
TEST CONDITION
MIN TYP MAX
UNIT
Over Charge Threshold Voltage
1
C
V
Detect Rising Edge of Supply
Voltage
4.325 4.350 4.375
V
Over Charge Release Voltage
2
C
V
Detect Falling Edge of Supply
Voltage
V
C1
-0.25 V
C1
-0.20 V
C1
-0.15
V
Over Discharge Threshold
Voltage
1
D
V
Detect Falling Edge of Supply
Voltage
2.220 2.300 2.380
V
Over Discharge Release Voltage
2
D
V
Detect Rising Edge of Supply
Voltage
V
D1
+0.6 V
D1
+0.7 V
D1
+0.8
V
Over Charge Delay Time
1
C
t
V
6
.
3
V
DD
=
to 4.5V
0.088 0.125 0.163
s
Over Discharge Delay Time
1
D
t
V
6
.
3
V
DD
=
to 2.2V
22.4 32.0 41.6 ms
Over Current Level 1 Detection
Voltage
1
OC
V
Detect Rising Edge of "VN" Pin
Voltage (
out
D
Response with
1
OC
t
Delay Time)
130 150 170 mV
Over Current Level 2 Detection
Voltage
2
OC
V
Detect Rising Edge of "VN"
Pin Voltage (
out
D
Response
with
2
OC
t
Delay Time)
400 500 600 mV
Short Circuit Detection Voltage
short
V
V
0
.
3
V
DD
=
, Detect Rising Edge
of "VN" Pin Voltage
(
out
D
Response with
short
t
Delay
Time)
7
.
1
V
DD
-
3
.
1
V
DD
-
9
.
0
V
DD
-
V
Over Current Level 1 Detection
Delay Time
1
OC
t
V
0
.
3
V
DD
=
2.8 4.0 5.2 ms
Over Current Level 2 Detection
Delay Time
2
OC
t
Room Temp.
Low or High Temp.
V
0
.
3
V
DD
=
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
short
t
V
0
.
3
V
DD
=
10 50
s
Charger Detection Voltage
CHR
V
Detect Rising Edge of "
out
D
"
Pin Voltage (when V
D1
V
DD
V
D2
)
0
.
2
-
3
.
1
-
6
.
0
-
V
out
C
High Level Resistance
COH
R
DD
V
=3.5V;
out
C
=3.0V;VN=0V
1 2 10
k
out
C
Low Level Resistance
COL
R
DD
V
=4.5V;
out
C
=0.5V;VN=0V
150 602 2,380
k
out
D
High Level Resistance
DOH
R
DD
V
3.5V;
out
D
=3.0V;VN=0V
2.5 5.0 10.0
k
out
D
Low Level Resistance
DOL
R
DD
V
=1.8V;
out
D
=0.5V;VN=1.8V
2.5 5.0 10.0
k
Internal Resistance between VN
and
DD
V
VND
R
DD
V
=1.8V; VN=0V
100 300 900
k
Internal Resistance between VN
and GND
VNG
R
DD
V
=3.5V; VN=3.5V
50 150
300
k
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