Advanced Analog Technology, Inc.
Advanced Analog Technology, Inc
.
Page 1 of 25
V2.0
AAT8661 Series
Product information presented is current as of publication date. Details are subject to change without notice.
ONE-CELL LI-ION BATTERY PROTECTION IC
FEATURES
Ideal for One-Cell Rechargeable Li-Ion
Battery Packs
High Accuracy Voltage Detection
Low Current Consumption:
A
3
Supply Current (Typical)
A
1
.
0
Shutdown Current
3-Level Over Current Detection:
Over-Current Level 1 /Over Current Level 2
/ Short Circuit
Wide Operating Temperature Range:
C
85
to
C
40
-
Small SOT26 Package
PIN CONFIGURATION
NULL
out
D
VN
out
C
GND
DD
V
GENERAL DESCRIPTION
The AAT8661 series are designed to protect
one-cell rechargeable Li-Ion battery pack against
over-charge, over-discharge, over-current and
short circuit. They use CMOS process to provide
high accuracy voltage detection and low current
consumption.
Each of the AAT8661 devices incorporates
voltage comparators, bandgap reference voltage
generator, signal delay circuit, short circuit
detector, and digital control circuit.
In the charge process, when the battery voltage is
charged to a value greater than
1
C
V (Over-Charge
Threshold Voltage), the output of
out
C
pin
switches to the low level, i.e., the
VN
pin level.
The output of
out
C
pin will switch to high level
when the battery voltage falls lower than V
C2
(Over-Charge Release Voltage), or when the
charger is disconnected from the battery pack and
the battery voltage level ranges between V
C1
and
V
C2
.
During the discharge process, when the battery
voltage drops to a value lower than
1
D
V
(Over-Discharge Threshold Voltage), the output
of
out
D
pin switches to low level immediately
after the internal delay time elapses. The output
of
out
D
pin will switch to high level when the
battery voltage is at a level higher than
2
D
V
(Over-Discharge Release Voltage).
Over current level 1 voltage (
1
OC
V
) is used to
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Page 2 of 25
V2.0
AAT8661 Series
monitor the amount of discharge current. If the
discharge current is high enough to cause VN pin
voltage increase to a value greater than
1
OC
V
, the
output of
out
D
pin will switch to a low level
after a delay time
1
OC
t
. If the load is removed
from battery pack, the output of
out
D
will
change to a high level again.
The mechanism of short circuit protection is
identical to a discharge current. If the short
circuit current is high enough to cause VN pin
voltage increase to greater than
short
V
, the output
of
out
D
pin will move to the low level after a
delay time
short
t
, and the output of
out
D
level
will change to high when the load is removed
from battery pack.
BLOCK DIAGRAM:
DD
V
GND
VN
out
D
out
C
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Page 3 of 25
V2.0
AAT8661 Series
PIN DESCRIPTION
PIN
NO.
NAME I/O
DESCRIPTION
1
out
D
O Discharge Control Pin which Connects to External MOSFET Gate
2 VN I
Voltage
Detection
Pin between VN and GND
3
out
C
O Charge Control Pin which Connects to External MOSFET Gate.
4
NULL
Null Pad.
5
DD
V
I Power Supply Input Pin
6
GND
I Ground
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS SYMBOL VALUE UNIT
Supply Voltage
DD
V
3
.
0
-
to 8
V
VN Pin Input Voltage
VN
V
20
V
DD
-
to
3
.
0
V
DD
+
V
out
D
Pin Output Voltage
Dout
V
3
.
0
-
to
3
.
0
V
DD
+
V
out
C
Pin Output Voltage
Cout
V
3
.
0
V
VN
-
to
3
.
0
V
DD
+
V
Power Dissipation
d
P
150
mW
Operating Temperature Range
C
T
40
-
to +85
C
Storage Temperature Range
storage
T
40
-
to +125
C
RECOMMENDED OPERATING CONDITIONS
TEST
CONDITION
MIN
MAX
UNIT
Supply Voltage,
DD
V
Voltage Defined as
DD
V
to GND
1.5 7.0 V
out
D
Output Voltage
GND
DD
V
V
out
C
Output Voltage
VN
DD
V
V
OPERATION VOLTAGE AND OPERATION CURRENT
PARAMETER
TEST CONDITION
MIN TYP MAX
UNIT
Supply Current at Normal Operation
Mode
DD
V
=3.3V; VN=0V; GND=0V
3.0
5.0
A
Standby Current at Power Down Mode
- -
0.1
A
Operation Voltage between
DD
V
and
VN
1.5 20.0
V
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Page 4 of 25
V2.0
AAT8661 Series
AAT8661A DETECTION VOLTAGE AND DELAY TIME (
C
25
)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP MAX
UNIT
Over Charge Threshold Voltage
1
C
V
Detect Rising Edge of Supply
Voltage
4.300 4.325 4.350 V
Over Charge Release Voltage
2
C
V
Detect Falling Edge of Supply
Voltage
V
C1
-0.3
V
C1
-0.25 V
C1
-0.2
V
Over Discharge Threshold
Voltage
1
D
V
Detect Falling Edge of Supply
Voltage
2.420 2.500 2.580 V
Over Discharge Release Voltage
2
D
V
Detect Rising Edge of Supply
Voltage
V
D1
+0.3
V
D1
+0.4 V
D1
+0.5
V
Over Charge Delay Time
1
C
t
3.6V
V
DD
=
to 4.5V
0.700 1.000 1.300 s
Over Discharge Delay Time
1
D
t
V
6
.
3
V
DD
=
to 2.4V
87.5 125.0 162.5 ms
Over Current Level 1 Detection
Voltage
1
OC
V
Detect Rising Edge of "VN" Pin
Voltage (
out
D
Response with t
OC1
Delay Time)
130 150 170 mV
Over Current Level 2 Detection
Voltage
2
OC
V
Detect Rising Edge of "VN"
Pin Voltage (
out
D
Response
with t
OC2
Delay Time)
400 500 600 mV
Short Circuit Detection Voltage
short
V
V
0
.
3
V
DD
=
, Detect Rising Edge
of "VN" Pin Voltage (
out
D
Response with
short
t
Delay
Time)
7
.
1
V
DD
-
3
.
1
V
DD
-
9
.
0
V
DD
-
V
Over Current Level 1 Detection
Delay Time
1
OC
t
V
0
.
3
V
DD
=
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
2
OC
t
Room Temp.
Low or High Temp.
V
0
.
3
V
DD
=
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
short
t
V
0
.
3
V
DD
=
10 50 s
Charger Detection Voltage
CHR
V
Detect Rising Edge of "
out
D
"
Pin Voltage (when V
D1
V
DD
V
D2
)
0
.
2
-
3
.
1
-
6
.
0
-
V
out
C
High Level Resistance
COH
R
V
5
.
3
V
DD
=
;
V
0
.
3
C
out
=
;
V
0
VN
=
1 2 10
k
out
C
Low Level Resistance
COL
R
V
5
.
4
V
DD
=
;
V
5
.
0
C
out
=
;
V
0
VN
=
150 602 2,380
k
out
D
High Level Resistance
DOH
R
V
5
.
3
V
DD
=
;
V
0
.
3
D
out
=
;
V
0
VN
=
2.5 5.0 10.0
k
out
D
Low Level Resistance
DOL
R
V
8
.
1
V
DD
=
;
V
5
.
0
D
out
=
;
V
8
.
1
VN
=
2.5 5.0 10.0
k
Internal Resistance between VN
and
DD
V
VND
R
V
8
.
1
V
DD
=
;
V
0
VN
=
100 300 900
k
Internal Resistance between VN
and GND
VNG
R
V
5
.
3
V
DD
=
;
V
5
.
3
VN
=
10 20 40
k
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Page 5 of 25
V2.0
AAT8661 Series
AAT8661B DETECTION VOLTAGE and DELAY TIME (25)
PARAMETER
SYMBOL
TEST CONDITION
MIN TYP MAX
UNIT
Over Charge Threshold Voltage
1
C
V
Detect Rising Edge of Supply
Voltage
4.325 4.350 4.375 V
Over Charge Release Voltage
2
C
V
Detect Falling Edge of Supply
Voltage
V
C1
-0.25 V
C1
-0.2 V
C1
-0.15
V
Over Discharge Threshold
Voltage
1
D
V
Detect Falling Edge of Supply
Voltage
2.220 2.300 2.380 V
Over Discharge Release Voltage
2
D
V
Detect Rising Edge of Supply
Voltage
V
D1
+0.6 V
D1
+0.7 V
D1
+0.8
V
Over Charge Delay Time
1
C
t
V
6
.
3
V
DD
=
to 4.5V
0.088 0.125 0.163 s
Over Discharge Delay Time
1
D
t
V
6
.
3
V
DD
=
to 2.2V
22.4 32 41.6 ms
Over Current Level 1 Detection
Voltage
1
OC
V
Detect Rising Edge of "VN" Pin
Voltage (
out
D
Response with t
OC1
Delay Time)
130 150 170 mV
Over Current Level 2 Detection
Voltage
2
OC
V
Detect Rising Edge of "VN"
Pin Voltage (
out
D
Response
with t
OC2
Delay Time)
400 500 600 mV
Short Circuit Detection Voltage
short
V
V
0
.
3
V
DD
=
, Detect Rising Edge
of "VN" Pin Voltage (
out
D
Response with
short
t
Delay
Time)
7
.
1
V
DD
-
3
.
1
V
DD
-
9
.
0
V
DD
-
V
Over Current Level 1 Detection
Delay Time
1
OC
t
V
0
.
3
V
DD
=
2.8
4.0 5.2 ms
Over Current Level 2 Detection
Delay Time
2
OC
t
Room Temp.
Low or High Temp.
V
0
.
3
V
DD
=
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
short
t
V
0
.
3
V
DD
=
10 50 s
Charger Detection Voltage
CHR
V
Detect Rising Edge of "
out
D
"
Pin Voltage
(when V
D1
V
DD
V
D2
)
0
.
2
-
3
.
1
-
6
.
0
-
V
out
C
High Level Resistance
COH
R
V
5
.
3
V
DD
=
;
V
0
.
3
C
OUT
=
;
V
0
VN
=
1 2 10
k
out
C
Low Level Resistance
COL
R
V
5
.
4
V
DD
=
;
V
5
.
0
C
OUT
=
;
V
0
VN
=
150 602 2,380
k
out
D
High Level Resistance
DOH
R
V
5
.
3
V
DD
=
;
V
0
.
3
D
out
=
;
V
0
VN
=
2.5 5.0 10.0
k
out
D
Low Level Resistance
DOL
R
V
8
.
1
V
DD
=
;
V
5
.
0
D
out
=
;
V
8
.
1
VN
=
2.5 5.0 10.0
k
Internal Resistance between VN
and
DD
V
VND
R
V
8
.
1
V
DD
=
;
V
0
VN
=
100 300 900
k
Internal Resistance between VN
and GND
VNG
R
V
5
.
3
V
DD
=
;
V
5
.
3
VN
=
10 20 40
k
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