ABB Semiconductors AG reserves the right to change specifications without notice.
V
RSM
=
2800 V
I
FAVM
=
7385 A
I
FRMS
=
11600 A
I
FSM
=
87000 A
V
F0
=
0.80 V
r
F
=
0.050 m
Doc. No. 5SYA1161-01 Nov.00
Patented free-floating silicon technology
Very low on-state losses
Optimum power handling capability
Blocking
Part Number
5SDD 60Q2800
5SDD 60Q2600
5SDD 60Q2200
Conditions
V
RRM
2000 V
1850 V
1600 V
f = 50 Hz, t
p
= 10ms
V
RSM
2800 V
2600 V
2200 V
f = 5 Hz, t
p
= 10ms
I
RRM
400 mA
V
RRM
T
j
= 160C
Mechanical data
F
M
Mounting force
nom.
90 kN
min.
81 kN
max.
108 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
m
Weight
2.9 kg
D
S
Surface creepage distance
56 mm
D
a
Air strike distance
22 mm
Rectifier Diode
5SDD 60Q2800
5SDD 60Q2800
ABB Semiconductors AG reserves the right to change specifications without notice.
2 of 4
Doc. No. 5SYA1161-01 Nov.00
On-state
I
FAVM
Max. average on-state current
7385 A
Half sine wave, T
C
= 90C
I
FRMS
Max. RMS on-state current
11600 A
I
FSM
Max. peak non-repetitive
87000 A
tp =
10 ms T
j
=
160C
surge current
95000 A
tp =
8.3 ms After surge:
I
2
t
Limiting load integral
38500 kA
2
s
tp =
10 ms V
D
= V
R
= 0V
38000 kA
2
s
tp =
8.3 ms
V
F
On-state voltage
1.05 V
I
F
=
5000 A
V
F0
Threshold voltage
0.80 V
I
F
=
2500 - 7500 A
T
j
=
160C
r
F
Slope resistance
0.050 m
Switching
Q
rr
Recovery charge
min
4400 As
di
F
/dt = -10A/s
V
R
= 200 V
max
6300 As
I
FRM
= 4000A
T
j
= 160C
Thermal
T
j max
Max. junction temperature
160C
T
j stg
Storage temperature range
-40...175C
R
thJC
Thermal resistance
10 K/kW
Anode side cooled
junction to case
10 K/kW
Cathode side cooled
5 K/kW
Double side cooled
R
thCH
Thermal resistance case to
2 K/kW
Single side cooled
heat sink
1 K/kW
Double side cooled
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
i
1
2
3
4
R
i
(K/kW)
3.27
0.74
0.66
0.31
i
(s)
0.5237
0.1082
0.02
0.0075
D
Q
1
Fig. 1 Transient thermal impedance junction to case.
5SDD 60Q2800
ABB Semiconductors AG reserves the right to change specifications without notice.
3 of 4
Doc. No. 5SYA1161-01 Nov.00
5
S
D
D
6
0
Q
2
8
0
0
5
S
D
D
6
0
Q
2
8
0
0
Fig 2. On-state characteristics.
Fig. 3 On-state characteristics.
P (W)
f
5
S
D
D
6
0
Q
2
8
0
0
0
2000
4000
6000
8000
10000
12000
I
FAV
(A)
90
95
100
105
110
115
120
125
130
135
140
145
150
155
160
165
T
case
(C)
DC
180
rectangular
180
sine
120
rectangular
5
S
D
D
6
0
Q
2
8
0
0
Double-sided
cooling
Fig. 4
On-state power dissipation vs. mean
on-state current. Turn-on losses
excluded.
Fig. 5
Max. permissible case temperature vs.
mean on-state current.
5SDD 60Q2800
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email Info@ch.abb.com
Internet www.abbsem.com
Doc. No. 5SYA1161-01 Nov.00
10
0
10
1
10
2
t [ms]
I
FSM
[kA]
50
60
70
80
90
100
110
120
130
140
150
I
FSM
i
2
t
i
2
dt [MA
2
s]
30
32
34
36
38
40
42
44
46
48
50
T
j
= 160C
5SDD 60Q2800
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
I
FSM
(kA)
2 0
n
p
1
1
2
3
4
5 6 7 8
0
T
j
= 160C
5
S
D
D
6
0
Q
2
8
0
0
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
10
4
3000
4000
5000
6000
7000
8000
20000
Q
rr
(As)
30
1
10
2
3
4
5 6 7 8 9
20
I
= 4000 A
T
j
= T
jmax
2000
30000
FRM
-di /dt (A/s)
F
5
S
D
D
6
0
Q
2
8
0
0
10
2
40
50
60
70
80
200
300
400
500
600
30
1
10
2
3
4
5 6 7 8 9
20
30
I
= 4000 A
T
j
= T
jmax
700
-di /dt(A/s)
I (A)
RM
F
5
S
D
D
6
0
Q
2
8
0
0
FRM
Fig. 8
Recovery charge vs. decay rate of on-
state current.
Fig. 9
Peak reverse recovery current vs. decay
rate of on-state current.
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