ABB Semiconductors AG reserves the right to change specifications without notice.
V
RRM
=
4500 V
I
FAVM
=
900 A
I
FSM
=
16 kA
V
F0
=
1.8 V
r
F
=
0.9 m
V
DClink
=
2400 V
Doc. No. 5SYA1111-02 Sep. 01
Patented free-floating silicon technology
Low switching losses
Optimized for use as large-area snubber diode in GTO converters
Industry standard press-pack ceramic housing, hermetically plasma-welded
Cosmic radiation withstand rating
Blocking
V
RRM
Repetitive peak reverse voltage
4500 V
Half sine wave, t
P
= 10 ms, f = 50 Hz
I
RRM
Repetitive peak reverse current
200 mA
V
R
= V
RRM,
T
j
= 125C
V
DClink
Permanent DC voltage for 100 FIT
failure rate
2400 V
100% Duty
V
DClink
Permanent DC voltage for 100 FIT
failure rate
2800 V
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data
(see Fig. 8)
min.
36 kN
F
m
Mounting force
max.
44 kN
a
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m
Weight
0.83 kg
D
S
Surface creepage distance
30 mm
D
a
Air strike distance
20 mm
Fast Recovery Diode
5SDF 07H4501
5SDF 07H4501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1111-02 Sep. 01
page 2 of 5
On-state
(see Fig. 2, 3)
I
FAVM
Max. average on-state current
900 A
I
FRMS
Max. RMS on-state current
1400 A
Half sine wave, T
c
= 85C
I
FSM
Max. peak non-repetitive
16 kA
tp
=
10 ms
Before surge:
surge current
40 kA
tp =
1 ms
T
c
= T
j
= 125C
1.28
10
6
A
2
s
tp =
10 ms
After surge:
I
2
dt
Max. surge current integral
0.8
10
6
A
2
s
tp =
1 ms
V
R
0 V
V
F
Forward voltage drop
4.5 V
I
F
=
3000 A
V
F0
Threshold voltage
1.8 V
Approximation for
r
F
Slope resistance
0.9 m
I
F
= 500...5000
A
T
j
= 125C
Turn-on
(see Fig. 4, 5)
V
fr
Peak forward recovery voltage
55 V
di/dt = 500 A/s, T
j
= 125C
Turn-off
(see Fig. 6, 7)
I
rr
Reverse recovery current
260 A
Q
rr
Reverse recovery charge
1700 C
di/dt = 100 A/s,
I
F
= 1000 A,
T
j
= 125C,R
S
= 22
, C
S
= 0.22F
Thermal
(see Fig. 1)
T
j
Operating junction temperature range
-40...125C
T
stg
Storage temperature range
-40...125C
R
thJC
Thermal resistance junction to case
24 K/kW
Anode side cooled
24 K/kW
Cathode side cooled
12 K/kW
Double side cooled
R
thCH
Thermal resistance case to heatsink
6 K/kW
Single side cooled
F
m
=
36... 44 kN
3 K/kW
Double side cooled
Analytical function for transient thermal impedance.
i
1
2
3
4
R
i
(K/kW)
7.44
2.00
1.84
0.71
i
(s)
0.47
0.091
0.011
0.0047
)
e
-
(1
R
=
(t)
Z
n
1
i
/
t
-
i
thJC
=
i
F
m
= 36... 44 kN Double side cooled
5SDF 07H4501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1111-02 Sep. 01
page 3 of 5
Fig. 1
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values).
Fig. 2
Forward current vs. forward voltage (typ.
and max. values) and linear approximation
of max. curve at 125C.
Fig. 3
Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.
5SDF 07H4501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1111-02 Sep. 01
page 4 of 5
Fig. 4
Typical forward voltage waveform when the
diode is turned on with a high di/dt.
Fig. 5
Forward recovery voltage vs. turn-on di/dt
(max. values).
Fig. 6
Typical current and voltage waveforms at
turn-off when the diode is connected to an
RCD snubber, as often used in GTO circuits.
Fig. 7
Reverse recovery current vs. turn off di/dt
(max. values).
5SDF 07H4501
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Doc. No. 5SYA1111-02 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
Fig. 8
Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
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