ABB Semiconductors AG reserves the right to change specifications without notice.
V
RRM
=
6000 V
I
FAVM
=
1100 A
I
FSM
=
18 kA
V
F0
=
1.5 V
r
F
=
0.6 m
V
DClink
=
3800 V
Doc. No. 5SYA1109-02 Sep. 01
Patented free-floating silicon technology
Low on-state and switching losses
Optimized for use as freewheeling diode in high-voltage GTO converters
Standard press-pack housing, hermetically plasma-welded
Cosmic radiation withstand rating
Blocking
V
RRM
Repetitive peak reverse voltage
6000 V
Half sine wave, t
P
= 10 ms, f = 50 Hz
I
RRM
Repetitive peak reverse current
50 mA
V
R
= V
RRM,
T
j
= 125C
V
DClink
Permanent DC voltage for 100 FIT
failure rate
3800 V
100% Duty
V
DClink
Permanent DC voltage for 100 FIT
failure rate
V
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data
(see Fig. 7)
min.
36 kN
F
m
Mounting force
max.
44 kN
a
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m
Weight
0.83 kg
D
S
Surface creepage distance
30 mm
D
a
Air strike distance
20 mm
Fast Recovery Diode
5SDF 10H6004
5SDF 10H6004
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1109-02 Sep. 01
page 2 of 5
On-state
(see Fig. 2, 3)
I
FAVM
Max. average on-state current
1100 A
I
FRMS
Max. RMS on-state current
1700 A
Half sine wave, T
c
= 85C
I
FSM
Max. peak non-repetitive
18 kA
tp
=
10 ms
Before surge:
surge current
44 kA
tp =
1 ms
T
c
= T
j
= 125C
1.62
10
6
A
2
s
tp =
10 ms
After surge:
I
2
dt
Max. surge current integral
0.97
10
6
A
2
s
tp =
1 ms
V
R
0 V
V
F
Forward voltage drop
3 V
I
F
=
2500 A
V
F0
Threshold voltage
1.5 V
Approximation for
r
F
Slope resistance
0.6 m
I
F
= 200...6000
A
T
j
= 125C
Turn-on
(see Fig. 4, 5)
V
fr
Peak forward recovery voltage
95 V
di/dt = 500 A/s, T
j
= 125C
Turn-off
(see Fig. 6)
I
rr
Reverse recovery current
1000 A
Q
rr
Reverse recovery charge
4700 C
E
rr
Turn-off energy
3.5 J
di/dt = 300 A/s,
I
F
= 3000 A,
T
j
= 125C,
V
RM
= 6000 V,
C
S
= 3F (GTO snubber circuit)
Thermal
(see Fig. 1)
T
j
Operating junction temperature range
-40...125C
T
stg
Storage temperature range
-40...125C
R
thJC
Thermal resistance junction to case
24 K/kW
Anode side cooled
24 K/kW
Cathode side cooled
12 K/kW
Double side cooled
R
thCH
Thermal resistance case to heatsink
6 K/kW
Single side cooled
F
m
=
36... 44 kN
3 K/kW
Double side cooled
Analytical function for transient thermal impedance.
i
1
2
3
4
R
i
(K/kW)
11.83
2.00
1.84
0.71
i
(s)
0.47
0.091
0.01
0.0047
)
e
-
(1
R
=
(t)
Z
n
1
i
/
t
-
i
thJC
=
i
F
m
= 36... 44 kN Double side cooled
5SDF 10H6004
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1109-02 Sep. 01
page 3 of 5
Fig. 1 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max.
values).
Fig. 2 Forward current vs. forward voltage (typ.
and max. values) and linear
approximation of max. curve at 125C.
Fig. 3 Surge current and fusing integral vs.
pulse width (max. values) for non-
repetitive, half-sinusoidal surge current
pulses.
5SDF 10H6004
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1109-02 Sep. 01
page 4 of 5
Fig. 4 Typical forward voltage waveform when
the diode is turned on with a high di/dt.
Fig. 5 Forward recovery voltage vs. turn-on
di/dt (max. values).
Fig. 6 Typical current and voltage waveforms at turn-off when the diode is connected to an RCD
snubber, as often used in GTO circuits.
5SDF 10H6004
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Doc. No. 5SYA1109-02 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
Fig. 7 Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
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