ABB Semiconductors AG reserves the right to change specifications without notice.
V
DRM
=
4500 V
I
TGQM
=
3000 A
I
TSM
=
24 kA
V
T0
=
1.80 V
r
T
=
0.70 m
V
DClin
=
3000 V
Gate turn-off Thyristor
5SGF 30J4502
PRELIMINARY
Doc. No. 5SYA 1211-04 Aug. 2000
Patented free-floating silicon technology
Low on-state and switching losses
Annular gate electrode
Industry standard housing
Cosmic radiation withstand rating
The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and
static losses designed to retro-fit all former 3 kA GTOs of the same voltage. It offers
optimal trade-off between on-state and switching losses and is encapsulated in an
industry-standard press pack housing 108 mm wide and 26 mm thick.
Blocking
V
DRM
Repetitive peak off-state voltage
4500
V
V
GR
2V
V
RRM
Repetitive peak reverse voltage
17
V
I
DRM
Repetitive peak off-state current
100
mA
V
D
= V
DRM
V
GR
2V
I
RRM
Repetitive peak reverse current
50
mA
V
R
= V
RRM
R
GK
=
V
DClink
Permanent DC voltage for 100
FIT failure rate
3000
V
-40
T
j
125 C. Ambient cosmic
radiation at sea level in open air.
Mechanical data
(see Fig. 19)
min.
28 kN
F
m
Mounting force
max.
38 kN
A
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
M
Weight
1.3 kg
D
S
Surface creepage distance
33 mm
D
a
Air strike distance
15 mm
5SGF 30J4502
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000
page 2 of 9
GTO Data
On-state
I
TAVM
Max. average on-state current
960 A
Half sine wave, T
C
= 85 C
I
TRMS
Max. RMS on-state current
1510 A
I
TSM
24 kA
t
P
=
10 ms
T
j
=
125C
Max. peak non-repetitive
surge current
40 kA
t
P
=
1 ms
After surge:
I
2
t
Limiting load integral
2.88
10
6
A
2
s
t
P
=
10 ms
V
D
= V
R
= 0V
0.80
10
6
A
2
s
t
P
=
1 ms
V
T
On-state voltage
3.90 V
I
T
=
3000 A
V
T0
Threshold voltage
1.80 V
I
T
=
400 - 4000 A
T
j
=
125 C
r
T
Slope resistance
0.70 m
I
H
Holding current
100 A
T
j
= 25 C
Gate
V
GT
Gate trigger voltage
1.2
V
V
D
= 24 V
T
j
=
25 C
I
GT
Gate trigger current
2.5
A
R
A
= 0.1
V
GRM
Repetitive peak reverse voltage
17
V
I
GRM
Repetitive peak reverse current
20
mA
V
GR
= V
GRM
Turn-on switching
di/dt
crit
Max. rate of rise of on-state
500 A/s
f = 200Hz
I
T
= 3000 A,
T
j
= 125 C
current
1000 A/s
f = 1Hz
I
GM
= 25 A, di
G
/dt = 20 A/s
t
d
Delay time
2.5 s
V
D
=
0.5 V
DRM
T
j
=
125 C
t
r
Rise time
5.0 s
I
T
=
3000 A
di/dt =
300 A/s
t
on(min)
Min. on-time
100 s
I
GM
=
25 A
di
G
/dt =
20 A/s
E
on
Turn-on energy per pulse
2.50 Ws
C
S
=
3 F
R
S
=
5
Turn-off switching
3000 A
V
DM
= V
DRM
di
GQ
/dt =
40 A/s
I
TGQM
Max controllable turn-off
current
C
S
= 3 F
L
S
0.2 H
t
s
Storage time
25.0 s
V
D
= V
DRM
V
DM
=
V
DRM
t
f
Fall time
3.0 s
T
j
=
125 C di
GQ
/dt =
40 A/s
t
off(min)
Min. off-time
100 s
I
TGQ
= I
TGQM
E
off
Turn-off energy per pulse
10.0 Ws
C
S
=
3 F R
S
=
5
I
GQM
Peak turn-off gate current
800 A
L
S
0.2 H
5SGF 30J4502
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000
page 3 of 9
Thermal
T
j
Storage and operating
-40...125C
junction temperature range
R
thJC
Thermal resistance
22
K/kW
Anode side cooled
junction to case
27
K/kW
Cathode side cooled
12
K/kW
Double side cooled
R
thCH
Thermal resistance case to
6
K/kW
Single side cooled
heat sink
3
K/kW
Double side cooled
i
1
2
3
4
R
I
(K/kW)
5.4
4.5
1.7
0.4
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
4
1
i
/
t
-
thJC
i
=
i
i
(s)
1.2
0.17
0.01
0.001
Fig. 1
Transient thermal impedance, junction to case.
5SGF 30J4502
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000
page 4 of 9
Fig. 2
On-state characteristics
Fig. 3
Average on-state power dissipation vs.
average on-state current.
Fig. 4
Surge current and fusing integral vs. pulse
width
5SGF 30J4502
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000
page 5 of 9
Fig. 5
Forward blocking voltage vs. gate-cathode
resistance.
Fig. 6 Static dv/dt capability: Forward blocking
voltage vs. neg. gate voltage or gate
cathode resistance.
Fig. 7 Forwarde gate current vs. forard gate
voltage.
Fig. 8 Gate trigger current vs. junction
temperature
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