ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
=
5500 V
I
TGQM
=
1800 A
I
TSM
=
16.1 kA
V
T0
=
1.65 V
r
T
=
1 m
V
DClink
=
3300 V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 19L6005
PRELIMINARY
Doc. No. 5SYA1229-01 Feb. 02
Direct fiber optic control and status
Fast response (t
don
< 3 s, t
doff
< 6 s)
Precise timing (t
doff
< 800 ns)
Patented free-floating silicon technology
High reliability
Very high EMI immunity
Cosmic radiation withstand rating
Blocking
V
DRM
Repetitive peak off-state voltage
5500 V
V
GR
2V
I
DRM
Repetitive peak off-state current
50 mA V
D
= V
DRM
V
GR
2V
V
DClink
Permanent DC voltage for 100
FIT failure rate
3300 V
0
T
j
115 C. Ambient cosmic
radiation at sea level in open air.
Mechanical data
(see Fig. 9)
min.
42 kN
F
m
Mounting force
max.
46 kN
D
p
Pole-piece diameter
85 mm
0.1 mm
H
Housing thickness
26 mm
0.5 mm
m
Weight IGCT
3.5 kg
D
s
Surface creepage distance
33 mm
D
a
Air strike distance
13 mm
l
Length IGCT
451 mm
+0/-0.5 mm
h
Height IGCT
40 mm
1.0 mm
w
Width IGCT
213 mm
+0/-0.5 mm
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-01 Feb. 02
page 2 of 9
GCT Data
On-state
(see Fig. 1)
I
TAVM
Max. average on-state current
725 A
Half sine wave, T
C
= 85 C
I
TRMS
Max. RMS on-state current
1140 A
16.1 kA
t
p
=
10 ms
I
TSM
Max. peak non-repetitive
surge current
32 kA
t
p
=
1 ms
T
j
= 115 C
After surge:
V
D
= V
R
= 0V
1.3x10
6
A
2
s
t
p
=
10 ms
I
2
t
Limiting load integral
0.51x10
6
A
2
s
t
p
=
1 ms
V
T
On-state voltage
3.45 V
I
T
=
1800 A
V
T0
Threshold voltage
1.65 V
r
T
Slope resistance
1 m
I
T
=
400 - 2000 A
T
j
= 115 C
Turn-on switching
f
=
500 Hz
T
j
= 115 C
di/dt
crit
Max. rate of rise of on-state
current
510 A/s
I
T
=
1800 A
V
D
= 3900 V
t
don
Turn-on delay time
3 s
V
D
=
3300 V
T
j
=
115 C
t
r
Rise time
1 s
I
T
=
1800 A
di/dt =
430 A/s
t
on (min)
Min, on-time
10 s
R
S
=
0.63
L
i
=
7.6 H
E
on
Turn-on energy per pulse
1 J
C
CL
=
4 F L
CL
=
0.6 H
Turn-off switching
(see Fig. 2, 3)
V
DM
V
DRM
T
j
=
115 C
I
TGQM
Max. controllable turn-off current
1800 A
V
D
=
3300 V
L
CL
0.6 H
V
DM
V
DRM
T
j
=
115 C
I
TGQM2
Max. controllable turn-off current
1100 A
V
D
=
3900 V
L
CL
0.6 H
t
doff
Turn-off delay time
6 s
V
D
=
3300 V
V
DM
V
DRM
t
f
Fall time
1 s
T
j
=
115 C R
s
=
0.63
t
off (min)
Min. off-time
10 s
I
TGQ
=
I
TGQM
L
i
=
7.6 H
E
off
Turn-off energy per pulse
9.6 J
C
CL
=
4 F L
CL
0.6 H
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-01 Feb. 02
page 3 of 9
Diode Data
On-state
(see Fig. 4)
I
FAVM
Max. average on-state current
325 A
I
FRMS
Max. RMS on-state current
510 A
Half sine wave, T
C
= 85 C
13.6 kA
t
p
=
10 ms T
j
=
115 C
I
FSM
Max. peak non-repetitive surge
current
31.5 kA
t
p
=
1 ms After surge:
0.93
10
6
A
2
s
t
p
=
10 ms V
F
= V
R
= 0V
I
2
t
Limiting load integral
0.49
10
6
A
2
s
t
p
=
1 ms
V
F
On-state voltage
6.8
V
I
F
=
1800 A
V
F0
Threshold voltage
2.48 V
T
j
=
115 C
r
F
Slope resistance
2.4 m
I
F
=
400 - 2200 A
Turn-off switching
(see Fig. 5, 6)
I
F
=
1800 A
T
j
=
115 C
di/dt
crit
Max. rate of rise of on-state
current
510 A/s
V
CL
=
3900 V
I
rr
Reverse recovery current
780 A
V
CL
=
3300 V
I
F
=
1800 A
E
rr
Turn-off energy
4.9 J
di/dt =
430 A/s T
j
=
115 C
R
s
=
0.63
L
i
=
7.6 H
C
CL
=
4 F
L
CL
=
0.6 H
Gate Unit
Power supply (see Fig. 9 to 11)
V
GDC
Gate Unit voltage
20
0.5 V
DC
Without galvanic isolation to power
circuit.
P
Gin
Gate Unit power consumption
47 W
f
S
= 500 Hz, I
TGQ AV
= 750 A,
= 0.9
X1
Gate Unit power connector
AMP 640389-4 MTA Friction Lock Header, right angle
Note 1
Optical control input/output
Note 3
(see Fig. 10 to 12)
P
on CS
Optical input power
>
-21 dBm
P
off CS
Optical noise power
<
-45 dBm
P
on SF
Optical output power
>
-15 dBm
P
off SF
Optical noise power
<
-50 dBm
Valid for 1mm plastic optical fibre
(POF)
t
GLITCH
Pulse width threshold
500 ns
Max. pulse width without response
CS
Receiver for command signal
Agilent, Type HFBR-2528
Note 2
SF
Transmitter for status feedback
Agilent, Type HFBR-1528
Note 2
Note 1: AMP, www.amp.com
Note 2: Agilent Technologies, www.semiconductor.agilent.com
Note 3: Do not disconnect or connect fiber optic cables while light is on.
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-01 Feb. 02
page 4 of 9
Thermal
T
jop
Operating junction temperature range
0...115
C
T
stg
Storage temperature range
-40...60
C
T
amb
Ambient operational temperature range
0...60
C
Thermal resistance junction to case
R
thJC
GCT
Diode not dissipating
12 K/kW Double side cooled
R
thJC
Diode
GCT not dissipating
23 K/kW
Thermal resistance case to heatsink
R
thCH
GCT
Diode not dissipating
6 K/kW Double side cooled
R
thCH
Diode
GCT not dissipating
6 K/kW
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-01 Feb. 02
page 5 of 9
GCT Part
1.5
2.0
2.5
3.0
3.5
4.0
V
T
[V]
0
500
1000
1500
2000
2500
I
T
[A]
T
j
= 115C
0
400
800
1200
1600
2000
I
TGQ
[A]
0
1
2
3
4
5
6
7
8
9
10
11
E
off
[J]
T
j
= 115C
V
D
= 3300 V
Fig. 1
GCT on-state characteristics.
Fig. 2
GCT turn-off energy per pulse vs.
turn-off current.
0
500
1000
1500
2000
0
1000
2000
3000
4000
5000
V
D
[V]
I
TGQ
[A]
T
j
= 0..115 C
V
DM
V
DRM
L
i
= 7.6
H
C
CL
= 4.0
F
L
CL
= 0.6
H
R
s
= 0.63
Fig. 3
Max. repetitive GCT turn-off current.
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