ABB Semiconductors AG reserves the right to change specifications without notice.
V
DRM
=
4500 V
I
TGQM
=
4000 A
I
TSM
=
32 kA
V
T0
=
1.40 V
r
T
=
0.325 m
V
DClink
=
2800 V
Doc. No. 5SYA1228-01 Jan. 01
Highest snubberless turn-off rating
Suitable for series connection
Fast response (t
don
< 3 s, t
doff
< 6 s)
High reliability
Very high EMI immunity
Simple fibre optic control interface and status
feedback
Cosmic radiation withstand rating
Blocking
V
DRM
Repetitive peak off-state voltage
4500 V
V
GR
2V
I
DRM
Repetitive peak off-state current
50 mA
V
D
= V
DRM
V
GR
2V
V
DClink
Permanent DC voltage for 100
FIT failure rate
2800 V
Ambient cosmic radiation at sea
level in open air.
Mechanical data
(see Fig. 8)
min.
36 kN
F
m
Mounting force
max.
44 kN
D
p
Pole-piece diameter
85 mm
0.1 mm
H
Housing thickness
26 mm
0.5 mm
m
Weight IGCT
3.30 kg
D
s
Surface creepage distance
33 mm Anode to Gate
D
a
Air strike distance
13 mm Anode to Gate
l
Length IGCT
451 mm
1.0 mm
h
Height IGCT
40 mm
1.0 mm
w
Width IGCT
213 mm
1.0 mm
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 35L4503
5SHY 35L4503
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1228-01 Jan. 01
page 2 of 8
GCT Data
On-state
(see Fig. 2, 3 ,4)
I
TAVM
Max. average on-state current
1345 A
I
TRMS
Max. RMS on-state current
2110 A
Half sine wave, T
C
= 85 C
32 kA
t
p
=
10 ms
I
TSM
Max. peak non-repetitive
surge current
47 kA
t
p
=
1 ms
T
j
= 125 C
After surge:
V
D
= V
R
= 0V
5.1
10
6
A
2
s
t
p
=
10 ms
I
2
t
Limiting load integral
1.1
10
6
A
2
s
t
p
=
1 ms
V
T
On-state voltage
2.70 V
I
T
=
4000 A
V
T0
Threshold voltage
1.40 V
r
T
Slope resistance
0.325 m
I
T
=
1000 - 4000 A
T
j
= 125 C
Turn-on switching
f
=
500 Hz
T
j
=
125 C
di/dt
crit
Max. rate of rise of on-state
current
1000 A/s
I
T
=
4000 A
V
D
= 2500 V
t
don
Turn-on delay time
3 s
V
D
=
2500 V
T
j
=
125 C
t
r
Rise time
1 s
I
T
=
4000 A
t
on (min)
Min. on-time
10 s
R
s
=
0.8
L
i
=
2.2 H
E
on
Turn-on energy per pulse
1.5 J
C
CL
=
6.0 F
L
CL
=
0.3 H
Turn-off switching
(see Fig. 5, 6)
V
DM
V
DRM
T
j
=
125 C
I
TGQM
Max. controllable turn-off
current
4000 A
V
D
=
2500 V
L
CL
=
0.3 H
t
doff
Turn-off delay time
6.0 s
V
D
=
2500 V
V
DM
V
DRM
t
f
Fall time
1.0 s
T
j
=
125 C
R
s
=
0.8
t
off (min)
Min. off-time
10 s
I
TGQ
=
4000 A
L
i
=
2.2 H
E
off
Turn-off energy per pulse
19.5 J
C
CL
=
6.0 F
L
CL
=
0.3 H
5SHY 35L4503
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1228-01 Jan. 01
page 3 of 8
Gate Unit
Power supply (see Fig. 7 to 9)
V
GDC
Gate Unit voltage
20
0.5 V
DC
Without galvanic isolation to power
circuit.
P
Gin
Gate Unit power consumption
52 W
f
S
= 500 Hz, I
TGQ AV
= 1000 A,
= 0.5
X1
Gate Unit power connector
AMP, Type 640389-4, MTA 156, friction lock, right
angle
Note 1
Optical control input/output (see Fig. 8 to 10)
P
on CS
Optical input power
>
-21 dBm
P
off CS
Optical noise power
<
-40 dBm
P
on SF
Optical output power
>
-19 dBm
P
off SF
Optical noise power
<
-50 dBm
Valid for 1mm plastic optical fibre
(POF)
t
GLITCH
Pulse width threshold
300 ns
Max. pulse width without response
CS
Receiver for command signal
Agilent, Type HFBR-2528
Note 2
SF
Transmitter for status feedback Agilent, Type HFBR-1528
Note 2
Note 1: AMP, www.amp.com
Note 2: Agilent Technologies, www.semiconductor.agilent.com
5SHY 35L4503
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1228-01 Jan. 01
page 4 of 8
Thermal
T
j
Operating junction temperature range
0...125
C
T
stg
Storage temperature range
-40...85
C
T
amb
Ambient operational temperature range
0...50
C
R
thJC
Thermal resistance junction to case
12
K/kW
Double side cooled
20
K/kW
Anode side cooled
30
K/kW
Cathode side cooled
R
thCH
Thermal resistance case to heatsink
6
K/kW
Double side cooled
3
K/kW
Single side cooled
Analytical function for transient thermal impedance.
i
1
2
3
4
R
i
(K/kW)
5.4
4.5
1.7
0.4
i
(s)
1.2
0.17
0.01
0.001
)
e
-
(1
R
=
(t)
Z
n
1
i
/
t
-
i
thJC
=
i
F
M
= 36... 44 kN Double side cooled
10
-3
10
-2
10
-1
10
0
10
1
10
2
t [s]
0
2
4
6
8
10
12
14
16
Z
thJC
[K/kW]
F
m
= 36...44 kN
Double side cooled
Fig. 1 Transient thermal impedance (junction-to-case) versus time (max. values).
5SHY 35L4503
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1228-01 Jan. 01
page 5 of 8
1.0
1.5
2.0
2.5
3.0
V
T
[V]
0
500
1000
1500
2000
2500
3000
3500
4000
4500
I
T
[A]
V
T
at 125C
V
T
at 25C
0.0
0.5
1.0
1.5
2.0
2.5
I
TAV
[kA]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
P
AV
[kW]
DC
180 square
180 sine
120 square
60 square
Fig. 2 GCT on-state characteristics.
Fig. 3 Average on-state power dissipation
versus on-state current.
10
-1
10
0
10
1
10
2
2
3 4 5 5 6
2
3 4 5 6 7
2
3 4 5 6 7
t [ms]
I
TSM
[kA]
10
0
10
1
10
2
2
3
4
5
6
7
8
9
20
30
40
50
60
70
80
I
TSM
i
2
t
i
2
t [10
6
A
2
s]
10
-1
10
0
10
1
0
0
0
1
1
1
1
2
3
4
5
6
7
8
0
1000
2000
3000
4000
I
TGQ
[A]
0
5
10
15
20
E
off
[J]
V
D
= 2500 V
V
DM
= 4500 V
R
s
= 0.8
C
CL
= 6.0
F
L
i
= 2.2
H
L
CL
= 0.3
H
T
j
= 125C
Fig. 4 Surge current and fusing integral versus
Fig. 5 GCT turn-off energy per pulse versus
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