ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
=
4500 V
I
TGQM
=
4000 A
I
TSM
=
3210
3
A
V
T0
=
1.4 V
r
T
=
0.325 m
V
Dclink
=
2800 V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 35L4510
Doc. No. 5SYA1232-01 Dec. 02
Highest snubberless turn off rating
Optimized for medium frequency (<1kHz) and
wide temperature range
Suitable for series connection
High reliability
Very high EMI immunity
Simple control interface with status feedback
AC supply voltage
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Repetitive peak off-state
voltage
V
DRM
Gate Unit energized
4500
V
Permanent DC voltage for
100 FIT failure rate
V
Dclink
Ambient cosmic radiation at sea level
in open air.
2800
V
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Repetitive peak off-state
current
I
DRM
V
D
= V
DRM
, Gate Unit energized
50
mA
Mechanical data
(see Fig. 8)
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Mounting force
F
m
36
40
44
kN
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Pole-piece diameter
D
p
0.1 mm
85
mm
Housing thickness
H
0.5 mm
26
mm
Weight
m
2.9
kg
Surface creepage distance D
s
Anode to Gate
33
mm
Air strike distance
D
a
Anode to Gate
10
mm
Length
l
1.0 mm
439
mm
Height
h
1.0 mm
40
mm
Width IGCT
w
1.0 mm
172.5
mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5SHY 35L4510
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-01 Dec. 02
page 2 of 8
GCT Data
On-state
(see Fig. 3)
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Max. average on-state
current
I
TAVM
Half sine wave, T
C
= 85 C
1700
A
Max. RMS on-state current I
TRMS
2700
A
Max. peak non-repetitive
surge current
I
TSM
3210
3
A
Limiting load integral
I
2
t
t
p
= 10 ms, Tj = 125C, sine wave
After Surge: V
D
= V
R
= 0 V
5.110
6
A
2
s
Max. peak non-repetitive
surge current
I
TSM
1210
3
A
Limiting load integral
I
2
t
t
p
= 100 ms, Tj = 125C, sine wave
After Surge: V
D
= V
R
= 0 V
710
6
A
2
s
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
On-state voltage
V
T
I
T
= 4000 A, T
j
= 125C
2.35
2.7
V
Threshold voltage
V
(T0)
1.4
V
Slope resistance
r
T
T
j
= 125C
I
T
= 1000...4000 A
0.325
m
Turn-on switching
(see Fig. 10, 11)
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Critical rate of rise of on-
state current
di
T
/dt
cr
f = 0..500 Hz, T
j
= 125C,
I
T
= 4000 A, V
D
= 2800 V
1000
A/s
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Turn-on delay time
t
don
3.5
s
Rise time
t
r
1
s
Turn-on energy per pulse
E
on
V
D
= 2800 V, T
j
= 125 C
I
T
= 3300 A, di/dt = V
D
/ L
i
I
TGQ
= I
TGQM
, L
i
= 5 H
C
CL
= 10 F, L
CL
= 0.3 H
1.5
J
Turn-off switching
(see Fig. 4, 5, 10, 11)
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Max. controllable turn-off
current
I
TGQM
V
DM
V
DRM,
T
j
= 125C,
V
D
= 2800 V, L
CL
0.3 H
4000
A
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Turn-off delay time
t
don
7
s
Fall time
t
f
1
s
Turn-on energy per pulse
E
off
V
D
= 2800 V, T
j
= 125 C
V
D
V
DRM
, R
S
= 0.65
I
TGQ
= I
TGQM
, L
i
= 5 H
C
CL
= 10 F, L
CL
= 0.3 H
22
J
5SHY 35L4510
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-01 Dec. 02
page 3 of 8
Gate Unit
Power supply
(see Fig. 6, 7, 8)
Maximum rated values
1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate Unit voltage
V
GAC
AC square wave amplitude (15 kHz
- 100kHz). Without galvanic isolation
to power circuit.
24
40
V
Min. power up current
I
GAC
Current needed to power up the
Gate Unit
2.1
A
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate Unit power
consumption
P
Gin
f
S
= 500 Hz, I
TGQ AV
= 1500 A,
= 0.5
100
W
Optical control input/output
Note 3
Maximum rated values
1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn on-time
t
on
10
s
Turn off-time
t
off
10
s
Switching periode
t
on
+ t
off
60
s
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
Optical input power
P
on CS
-19.5
-1.0
dBm
Optical noise power
P
off CS
-45.0
dBm
Optical output power
P
on SF
-19.0
-1.0
dBm
Optical noise power
P
off SF
Valid for 1mm plastic optical fibre
(POF)
-50.0
dBm
Pulse width threshold
t
GLITCH
Max. pulse width without response
400
ns
Connectors
Note 3
(see Fig. 8, 9)
Parameter
Symbol
Description
Gate Unit power connector
X1
AMP: MTA-156, Part Number 641210-5
Note 1
LWL receiver for command
signal
CS
Agilent, Type HFBR-2528
Note 2
LWL transmitter for status
feedback
SF
Agilent, Type HFBR-1528
Note 2
Note 1: AMP, www.amp.com
Note 2: Agilent Technologies, www.semiconductor.agilent.com
Note 3: Do not disconnect or connect fiber optic cables while Gate Unit is energized.
0
500
1000
1500
2000
2500
3000
250
350
450
550
650
750
850
950
F
S
[Hz]
I
TGQ(AVG)
[A]
T
amb(max)
= 40 C
T
amb(max)
= 50 C
Calculated lifetime of on-board
capacitors 20 years.
With slightly forced air cooling (air
velocity > 0.5 m/s).
Strong air cooling allows for increased
ambient temperature.
Fig. 1
Max. Turn-off current for lifetime
operation.
5SHY 35L4510
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-01 Dec. 02
page 4 of 8
Visual feedback
(see Fig. 9)
Parameter
Symbol Description
Color
Gate OFF
LED1
"Light" when GCT is off
(green)
Gate ON
LED2
"Light" when gate-current is flowing
(yellow)
Fault
LED3
"Light" when not ready / Failure
(red)
Power supply voltage OK
LED4
"Light" when power supply is within specified range
(green)
Thermal
Maximum rated values
1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Junction operating temperature
T
j
-40
125
C
Storage temperature range
T
stg
-40
60
C
Ambient operational temperature
T
a
-40
50
C
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Thermal resistance junction
to case
R
th(jc)
GCT Part (Double side cooled)
8.5
K/kW
Thermal resistance case to
heatsink (Double side
cooled)
R
th(ch)
GCT Part (Double side cooled)
3
K/kW
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
i
1
2
3
4
R
i
(K/kW)
5.625
1.486
0.849
0.527
i
(s)
0.52748
0.08969
0.00905
0.00244
Fig. 2 Transient thermal impedance (junction-to-
case) vs. time (max. values).
5SHY 35L4510
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-01 Dec. 02
page 5 of 8
GCT Part
0
500
1000
1500
2000
2500
3000
3500
4000
4500
1.0
1.5
2.0
2.5
3.0
V
T
[V]
I
T
[A]
Tj = 125C
Tj = 25C
0
1000
2000
3000
4000
I
TGQ
[A]
0
5
10
15
20
25
T
j
= 125C
V
D
= 2800 V
L
i
= 5
H
C
CL
= 10
F
R
s
= 0.65
L
CL
= 0.3
E
OFF
[J]
Fig. 3 GCT on-state characteristics.
Fig. 4 GCT turn-off energy per pulse vs. turn-off
current.
0
1000
2000
3000
4000
5000
0
1000
2000
3000
4000
V
D
[V]
I
TGQ
[A]
V
DM
V
DRM
L
i
= 5
H
C
CL
= 10
F
R
S
= 0.65
L
CL
= 0.3
H
T
j
= -40 C
T
j
= 0 C
T
j
= 125 C
0
500
1000
1500
I
TGQ
[A]
0
20
40
60
80
100
P
Gin
[W]
fs = 1000 Hz
fs = 500 Hz
fs = 50 Hz
duty cycle
= 0.5
Fig. 5 Safe Operation Area (Increases linearly with T
j
from -40 to 125 C)
Fig. 6 Max. Gate Unit input power in chopper mode
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