ABB Semiconductors AG reserves the right to change specifications without notice.
V
CE
=
1200 V
I
C
=
75 A
Doc. No. 5SYA1510-00 May. 01
Low-loss, rugged IGBT chip-set
EMC friendly diode with positive
temp. coefficient of on-state
Low profile compact baseless
package
Industry standard package
UL File no. E63532
Maximum Rated Values
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
Values
Unit
Collector-Emitter Voltage
V
CES
V
GE
shorted
1200
V
DC Collector Current
I
C
T
hs
= 60C
75
A
Peak Collector Current
I
CM
Pulse: tp=1ms, T
hs
= 60C
150
A
Gate Emitter Voltage
V
GES
20
V
Total Power Dissipation
Ptot
T
hs
= 25C per switch
340
W
IGBT Switching SOA
SwSOA
I
C
= 150 A, V
CEM
= 1200 V, V
CC
= 1000 V,
V
GE
=
15 V, T
vj
=125C
voltages measured on auxiliary terminals
IGBT Short Circuit SOA
SCSOA
V
CC
= 900 V, V
CEM
= 1200 V, t
p
= 10 s,
V
GE
=
15 V, Tvj =125 C
DC Forward Current
I
F
75
A
Peak Forward Current
I
FM
Pulse: tp = 1ms, T
hs
= 60C
150
A
IGBT Module LoPak3 NPT
5SNS 0075W120000
5SNS 0075W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1510-00 May. 01
2 of 8
Maximum Rated Values (cont.)
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
Values
Unit
Junction Temperature
T
vj
- 40 ~ 150
C
Storage Temperature
T
tstg
/T
cop
- 40 ~ 125
C
Isolation Voltage
V
iso
1 min, f = 50Hz
2500
V
Base to Heatsink
(M5) Hole 5.5mm diameter
3 ~ 6
Nm
Main Terminals
Pin: 1.15*1.0 mm
PCB mounting
Pitch of pins : 3.81 mm
Mounting
Gate, Emitter Aux. Pin: 1.15*1.0 mm
IGBT Characteristic Values
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
min. typ.
max. Unit
T
vj
= 25 C
2.45
3.00
V
Collector-Emitter
Saturation Voltage
V
CE(sat)
I
C
= 75 A, V
GE
= 15 V
T
vj
= 125 C
2.95
V
Collector Cut-off Current
I
CES
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 125 C
6
mA
Gate-Emitter leakage
Current
I
GES
V
CE
= 0 V, V
GE
=
20 V, T
vj
= 125 C
500
nA
Gate-Emitter Threshold
Voltage
V
GE(TO)
I
C
= 3 mA, V
CE
= V
GE
4.5
6.5
V
Total Gate Charge
Q
ge
I
C
= 75 A, V
CE
= 600 V, V
GE
= -15 to 15 V
800
nC
Input Capacitance
C
ies
6
nF
Output Capacitance
C
oes
0.5
nF
Reverse Transfer
Capacitance
C
res
V
CE
= 25 V, V
GE
= 0 V, f = 1MHz
0.4
nF
Turn-On Delay Time
t
d(on)
0.09
s
Rise Time
t
r
I
C
= 75 A, V
CC
= 600 V, R
gon
= 15
,
T
vj
= 125 C, V
GE
=
15 V
0.07
s
Turn-Off Delay Time
t
d(off)
0.48
s
Fall Time
t
f
I
C
= 75 A, V
CC
= 600 V, R
goff
= 15
,
T
vj
= 125 C,V
GE
=
15 V
0.06
s
Turn-on Switching Energy
E
on
R
gon
= 15
9.0
mJ
Turn-off Switching Energy
E
off
R
goff
= 15
I
C
= 75 A, T
vj
= 125 C,
V
CC
= 600 V, V
GE
=
15 V,
inductive load, integrated up
to: 3% V
CE
(E
on
), 1% I
C
(E
off
)
8.0
mJ
Module stray Inductance
Plus to Minus
L
s DC
25
nH
5SNS 0075W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1510-00 May. 01
3 of 8
Diode Characteristic Values
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
min.
typ. max.
Unit
T
vj
= 25 C
2.00 2.45
Forward Voltage
V
F
I
F
= 75 A
T
vj
= 125 C
2.00
V
Reverse Recovery Current
I
rrm
60
A
Reverse Recovery Charge
Q
rr
13
C
Reverse Recovery Time
t
rr
I
F
= 75 A, R
gon
= 15
, V
CC
= 600 V,
V
GE
=
15 V, T
vj
= 125 C
0.4
s
Reverse Recovery Energy
E
rec
I
F
= 75 A, T
vj
= 125 C, V
CC
= 600 V,
R
gon
= 15
, V
GE
=
15 V,
inductive load, fully integrated
5.0
mJ
Thermal Characteristics
(T
j
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
min.
typ. max.
Unit
IGBT Thermal Resistance
Junction to Heatsink
R
th
j-h
Igbt
0.370 C/W
Diode Thermal Resistance
Junction to Heatsink
R
th
j-h
Diode
0.740 C/W
Equivalent IGBT Thermal
Resistance Junct. to Case
R
th
j-c
Igbt
0.235 C/W
Equivalent Diode Thermal
Resistance Junct. to Case
R
th
j-c
Diode
Heatsink:
flatness < +/- 20 m,
roughness < 6 m without ridge
Thermal grease:
thickness: 30 m < t < 50 m
0.550 C/W
Mechanical Properties
Parameter
Symbol
Conditions
min.
typ. max.
Unit
Dimensions
L* W* H Typical , see outline drawing
121.5 * 61.5 * 20.5
mm
Term. to base:
8.5
mm
Clearance Distance
D
C
acc. IEC 664-1 and
prEN50124-1:1995 Term. to term:
9.5
mm
Term. to base:
12.5
mm
Surface Creepage
Distance
D
SC
acc. IEC 664-1 and
prEN50124-1:1995 Term. to term:
15.5
mm
Weight
215
gr
5SNS 0075W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1510-00 May. 01
4 of 8
Electrical configuration
Outline drawing
5SNS 0075W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1510-00 May. 01
5 of 8
Fig. 1 Typ. Output Characteristics at Tvj=25C
Fig. 2 Typ. Output Characteristics at Tvj=125C
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Typ. Gate charge Characteristics
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