ABB Semiconductors AG reserves the right to change specifications without notice.
V
SM
=
5200 V
I
TAVM
=
1800 A
I
TRMS
=
2830 A
I
TSM
=
29000 A
V
T0
=
1.02 V
r
T
=
0.320 m
Bi-Directional Control Thyristor
5STB 17N5200
Doc. No. 5SYA1036-03 Sep. 01
Two thyristors integrated into one wafer
Patented free-floating silicon technology
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number
5STB 17N5200
5STB 17N5000
5STB 17N4600
Conditions
V
SM
5200 V
5000 V
4600 V
f = 5 Hz, t
p
= 10ms
V
RM
4400 V
4200 V
4000 V
f = 50 Hz,t
p
= 10ms
I
SM
400 mA
V
SM
I
RM
400 mA
V
RM
T
j
= 125C
dV/dt
crit
2000 V/s
@ Exp. to 0.67xV
SM
V
RM
is equal to V
SM
up to T
j
= 110C
Mechanical data
F
M
Mounting force
nom.
90 kN
min.
81 kN
max.
108 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
m
Weight
2.9 kg
D
S
Surface creepage distance
53 mm
D
a
Air strike distance
22 mm
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1036-03 Sep. 01
page 2 of 6
On-state
I
TAVM
Max. average on-state
t
1800 A
Half sine wave, T
C
= 70C
I
TRMS
Max. RMS on-state current
2830 A
I
TSM
Max. peak non-repetitive
29000 A
tp
=
10 ms T
j
= 125C
surge current
31000 A
tp
=
8.3 ms After surge:
I
2
t
Limiting load integral
4205 kA
2
s
tp
=
10 ms V
D
= V
R
= 0V
3990 kA
2
s
tp
=
8.3 ms
V
T
On-state voltage
1.68 V
I
T
=
2000 A
V
T0
Threshold voltage
1.02 V
I
T
=
1000 - 3000 A
T
j
= 125C
r
T
Slope resistance
0.320 m
I
H
Holding current
50-250 mA
T
j
= 25C
25-150 mA
T
j
= 125C
I
L
Latching current
100-500 mA
T
j
= 25C
50-300 mA
T
j
= 125C
Switching
di/dt
crit
Critical rate of rise of on-state
250 A/s Cont. f = 50 Hz V
D
0.67V
DRM
, T
j
= 125C
current
500 A/s
I
TRM
= 3000 A
60 sec.
f = 50Hz
I
FG
= 2 A, t
r
= 0.5 s
t
d
Delay time
3.0 s
V
D
= 0.4
V
DRM
I
FG
= 2 A, t
r
= 0.5 s
t
q
Turn-off time
700 s
V
D
0.67V
DRM
I
TRM
= 3000 A, T
j
= 125C
dv
D
/dt = 20V/s V
R
> 200 V, di
T
/dt = -1.5 A/s
Q
rr
Recovery charge
min
4000 As
max
5200 As
Triggering
V
GT
Gate trigger voltage
2.6 V
T
j
= 25C
I
GT
Gate trigger current
400 mA
T
j
= 25C
V
GD
Gate non-trigger voltage
0.3 V
V
D
= 0.4
V
RM
T
j
= 125C
I
GD
Gate non-trigger current
10 mA
V
D
= 0.4
V
RM
T
j
= 125C
V
FGM
Peak forward gate voltage
12 V
I
FGM
Peak forward gate current
10 A
V
RGM
Peak reverse gate voltage
10 V
P
G
Maximum gate power loss
3 W
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1036-03 Sep. 01
page 3 of 6
Thermal
T
j
Operating junction temperature range
-40...125 C
T
stg
Storage temperature range
-40...150 C
R
thJC
Thermal resistance
22.8 K/kW
Anode side cooled
junction to case
22.8 K/kW
Cathode side cooled
11.4 K/kW
Double side cooled
R
thCH
Thermal resistance case to
4 K/kW
Single side cooled
heat sink
2 K/kW
Double side cooled
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
i
1
2
3
4
R
i
(K/kW)
6.77
2.51
1.34
0.78
i
(s)
0.8651
0.1558
0.0212
0.0075
0.001
0.010
0.100
1.000
10.000
t [s]
0
5
10
15
Z
thJC
[K/kW]
BN
1
180 sine:
add 1 K/kW
180 rectangular: add 1 K/kW
120 rectangular: add 1 K/kW
60 rectangular:
add
2
K/kW
F
m
= 81..108 kN
Double-side cooling
Fig. 1 Transient thermal impedance junction to case.
On-state characteristic model:
IT
D
iT
C
iT
B
A
VT
+
+
+
+
=
)
1
ln(
Valid for i
T
= 500 4000 A
A
B
C
D
1.309
0.00008
-0.125
0.026
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1036-03 Sep. 01
page 4 of 6
0
500
1000
1500
2000
2500
3000
I
TAV
(A)
70
75
80
85
90
95
100
105
110
115
120
125
130
T
case
(C)
DC
180
rectangular
180
sine
120
rectangular
5S
T
B
17N52
00
Double-sided
cooling
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1036-03 Sep. 01
page 5 of 6
Fig. 8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
10
4
3000
4000
5000
6000
7000
8000
20000
Q
rr
(As)
30
-di
T
/dt (A/s)
1
10
2
3
4
5 6 7 8 9
20
I
TRM
= 3000 A
T
j
= T
jmax
5STB
17N5200
2000
30000
10
2
10
3
60
70
80
200
300
400
500
600
700
800
I
RM
(A)
30
-di
T
/dt (A/s)
1
10
2
3
4
5 6 7 8 9
20
30
I
TRM
= 3000 A
T
j
= T
jmax
5S
T
B
1
7
N
5
200
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
Turn - off time, typical parameter relationship.
0
4
8
12
16
20
24
28
32
di
T
/dt (A/s)
1.0
1.1
1.2
1.3
5
S
TB 17N
5
2
0
0
f (-di /dt)
2
T
-
Fig. 12 t
q
/t
q1
= f
1
(T
j
)
Fig. 13 t
q
/t
q1
= f
2
(-di
T
/dt)
Fig. 14 t
q
/t
q1
= f
3
(dv/dt)
t
q
= t
q1
f
1
(T
j
)
f
2
(-di
T
/dt)
f
3
(dv/dt)
t
q1
:at normalized values (see page 2)
t
q
: at varying conditions
5STB 17N5200
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Doc. No. 5SYA1036-03 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
Turn-on and Turn-off losses
0
1
2
3
4
5
6
7
8
I
T
(kA)
0
1
2
3
4
5
W
on
(Ws/pulse)
t
p
= 1 ms
t
p
= 2 ms
t
p
= 5 ms
t
p
= 10 ms
5S
T
B
17
N
5
200
0
1
2
3
4
5
6
7
8
I
T
(kA)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
W
on
(Ws/pulse)
di/dt = 10 A/s
di/dt = 5 A/s
di/dt = 2 A/s
di/dt = 1 A/s
5
S
T
B
17N
5
2
0
0
Fig. 15W
on
= f(I
T
, t
P
), T
j
= 125 C.
Half sinusoidal waves.
Fig. 16W
on
= f(I
T
, di/dt), T
j
= 125 C.
Rectangular waves.
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V
0
(kV)
0
1
2
3
4
5
6
7
8
9
10
W
off
(Ws/pulse)
I
TRM
= 8000 A
I
TRM
= 6000 A
I
TRM
= 4000 A
5S
T
B
17N52
00
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V
0
(kV)
0
2
4
6
8
10
12
14
16
18
W
off
(Ws/pulse)
di/dt = 10 A/s
di/dt = 5 A/s
di/dt = 2 A/s
di/dt = 1 A/s
5
S
TB 17N
5
2
0
0
Fig. 17W
off
= f(V
0
, I
T
), T
j
= 125 C.
Half sinusoidal waves. t
P
= 10 ms.
Fig. 18W
off
= f(V
0
,di/dt), T
j
= 125 C.
Rectangular waves.
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