ABB Semiconductors AG reserves the right to change specifications without notice.
V
DSM
=
1800 V
I
TAVM
=
325 A
I
TRMS
=
510 A
I
TSM
=
5000 A
V
T0
=
0.89 V
r
T
=
0.850 m
Phase Control Thyristor
5STP 03A1800
Doc. No. 5SYA1032-01 Sep. 01
Designed for traction, energy and industrial applications
Optimum power handling capability
Blocking
Part Number
5STP 03A1800 5STP 03A1600 5STP 03A1200 Conditions
V
DRM
V
RRM
1800 V
1600 V
1200 V
f = 50 Hz, t
p
= 10ms
V
RSM1
2000 V
1800 V
1400 V
t
p
= 5ms, single pulse
I
DRM
50 mA
V
DRM
I
RRM
50 mA
V
RRM
T
j
= 125C
dV/dt
crit
1000 V/s
Exp. to 0.67 x V
DRM
, T
j
= 125C
Mechanical data
F
M
Mounting force
nom.
4 kN
min.
3.6 kN
max.
4.8 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
m
Weight
0.06 kg
D
S
Surface creepage distance
7 mm
D
a
Air strike distance
6 mm
5STP 03A1800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1032-01 Sep. 01
page 2 of 5
On-state
I
TAVM
Max. average on-state current
325 A
Half sine wave, T
C
= 70C
I
TRMS
Max. RMS on-state current
510 A
I
TSM
Max. peak non-repetitive
5000 A
tp =
10 ms
T
j
= 125C
surge current
5400 A
tp =
8.3 ms
After surge:
I
2
t
Limiting load integral
125 kA
2
s tp =
10 ms
V
D
= V
R
= 0V
121 kA
2
s tp =
8.3 ms
V
T
On-state voltage
1.40 V
I
T
=
600 A
V
T0
Threshold voltage
0.89 V
I
T
=
200 - 600 A
T
j
= 125C
r
T
Slope resistance
0.850 m
I
H
Holding current
20-70 mA
T
j
= 25C
15-60 mA
T
j
= 125C
I
L
Latching current
50-300 mA
T
j
= 25C
30-275 mA
T
j
= 125C
Switching
di/dt
crit
Critical rate of rise of on-state
150 A/s Cont. f = 50 Hz V
D
0.67V
DRM
, T
j
= 125C
current
300 A/s
I
TRM
= 600 A
60 sec.
f = 50Hz
I
FG
= 1.5 A, t
r
= 0.5 s
t
d
Delay time
3.0 s
V
D
= 0.4
V
DRM
I
FG
= 1.5 A, t
r
= 0.5 s
t
q
Turn-off time
400 s
V
D
0.67V
DRM
I
TRM
= 600 A, T
j
= 125C
dv
D
/dt = 20V/s V
R
> 200 V, di
T
/dt = -20 A/s
Q
rr
Recovery charge
min
400 As
max
1100 As
Triggering
V
GT
Gate trigger voltage
2.4 V
T
j
= 25
I
GT
Gate trigger current
250 mA
T
j
= 25
V
GD
Gate non-trigger voltage
0.3 V
V
D
=0.4 x V
DRM
I
GD
Gate non-trigger current
10 mA
V
D
= 0.4 x V
DRM
V
FGM
Peak forward gate voltage
12 V
I
FGM
Peak forward gate current
10 A
V
RGM
Peak reverse gate voltage
10 V
P
G
Gate power loss
3 W
5STP 03A1800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1032-01 Sep. 01
page 3 of 5
Thermal
T
jmax
Max. operating junction temperature
range
125 C
T
stg
Storage temperature range
-40...140 C
R
thJC
Thermal resistance
130 K/kW
Anode side cooled
junction to case
160 K/kW
Cathode side cooled
90 K/kW
Double side cooled
R
thCH
Thermal resistance case to
80 K/kW
Single side cooled
heat sink
40 K/kW
Double side cooled
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
i
1
2
3
4
R
i
(K/kW)
15.6
17.9
18.7
18.2
i
(s)
1.4191
0.181
0.1614
0.0941
Fig. 1 Transient thermal impedance junction to case.
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
T
j
=125C, 10ms half sine
5STP 03A1800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1032-01 Sep. 01
page 4 of 5
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
5STP 03A1800
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Doc. No. 5SYA1032-01 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
Fig. 8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
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