ABB Semiconductors AG reserves the right to change specifications without notice.
V
DSM
=
8500 V
I
TAVM
=
1200 A
I
TRMS
=
1880 A
I
TSM
=
35000 A
V
T0
=
1.25 V
r
T
=
0.480 m
Phase Control Thyristor
5STP 12N8500
Doc. No. 5SYA1044-02 Sep. 01
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Part Number
5STP 12N8500 5STP 12N8200 5STP 12N7800 Conditions
V
DSM
V
RSM
8500 V
8200 V
7800 V
f = 5 Hz, t
p
= 10ms
V
DRM
V
RRM
8000 V
7700 V
7300 V
f = 50 Hz, t
p
= 10ms
V
RSM1
9000 V
8600 V
8200 V
t
p
= 5ms, single pulse
I
DSM
1000 mA
V
DSM
I
RSM
400 mA
V
RSM
T
j
= 90C
dV/dt
crit
2000 V/s
Exp. to 0.67 x V
DRM
, T
j
= 90C
Mechanical data
F
M
Mounting force
nom.
90 kN
min.
81 kN
max.
108 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
m
Weight
2.9 kg
D
S
Surface creepage distance
56 mm
D
a
Air strike distance
22 mm
5STP 12N8500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Sep. 01
page 2 of 6
On-state
I
TAVM
Max. average on-state current
1200 A
Half sine wave, T
C
= 70C
I
TRMS
Max. RMS on-state current
1880 A
I
TSM
Max. peak non-repetitive
35000 A
tp =
10 ms
T
j
= 90C
surge current
38000 A
tp =
8.3 ms
After surge:
I
2
t
Limiting load integral
6125 kA
2
s tp =
10 ms
V
D
= V
R
= 0V
5992 kA
2
s tp =
8.3 ms
V
T
On-state voltage
2.00 V
I
T
=
1500 A
V
T0
Threshold voltage
1.25 V
I
T
=
700 - 2100 A
T
j
= 90C
r
T
Slope resistance
0.480 m
I
H
Holding current
75-150 mA
T
j
= 25C
50-125 mA
T
j
= 90C
I
L
Latching current
150-
600
mA
T
j
= 25C
150-
800
mA
T
j
= 90C
Switching
di/dt
crit
Critical rate of rise of on-state
250 A/s Cont. f = 50 Hz V
D
0.67V
DRM
, T
j
= 90C
current
500 A/s
I
TRM
= 2000 A
60 sec.
f = 50Hz
I
FG
= 2 A, t
r
= 0.5 s
t
d
Delay time
3.0 s
V
D
= 0.4
V
DRM
I
FG
= 2 A, t
r
= 0.5 s
t
q
Turn-off time
600 s
V
D
0.67V
DRM
I
TRM
= 2000 A, T
j
= 90C
dv
D
/dt = 20V/s V
R
> 200 V, di
T
/dt = -1 A/s
Q
rr
Recovery charge
min
2800 As
max
3400 As
Triggering
V
GT
Gate trigger voltage
2.6 V
T
j
= 25
I
GT
Gate trigger current
400 mA
T
j
= 25
V
GD
Gate non-trigger voltage
0.3 V
V
D
=0.4 x V
DRM
I
GD
Gate non-trigger current
10 mA
V
D
= 0.4 x V
DRM
V
FGM
Peak forward gate voltage
12 V
I
FGM
Peak forward gate current
10 A
V
RGM
Peak reverse gate voltage
10 V
P
G
Gate power loss
3 W
5STP 12N8500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Sep. 01
page 3 of 6
Thermal
T
jmax
Max. operating junction temperature
range
90 C
T
stg
Storage temperature range
-40...140 C
R
thJC
Thermal resistance
11.4 K/kW
Anode side cooled
junction to case
11.4 K/kW
Cathode side cooled
5.7 K/kW
Double side cooled
R
thCH
Thermal resistance case to
2 K/kW
Single side cooled
heat sink
1 K/kW
Double side cooled
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
i
1
2
3
4
R
i
(K/kW)
3.4
1.26
0.68
0.35
i
(s)
0.8685
0.1572
0.0219
0.0078
0.001
0.010
0.100
1.000
10.00
t [s]
0
1
2
3
4
5
6
Z
thJC
[K/kW]
TN
1
180 sine:
add 0.5 K/kW
180 rectangular: add 0.5 K/kW
120 rectangular: add 0.8 K/kW
60 rectangular: add 1.5 K/kW
F
m
= 81..108 kN
Double-side cooling
Fig. 1 Transient thermal impedance junction to case.
On-state characteristic model:
IT
D
iT
C
iT
B
A
VT
+
+
+
+
=
)
1
ln(
Valid for i
T
= 200 4000 A
A
B
C
D
1.97
-0.00018
-0.3
0.062
Fig. 2 On-state characteristics.
T
j
=125C, 10ms half sine
Fig. 3 On-state characteristics.
5STP 12N8500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Sep. 01
page 4 of 6
0
200 400 600 800 1000 1200 1400 1600 1800
I
TAV
(A)
70
75
80
85
90
T
case
(C)
DC
180 rectangular
180 sine
120 rectangular
5S
T
P
12
N
8
50
0
Double-sided cooling
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
5STP 12N8500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Sep. 01
page 5 of 6
Fig. 8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
10
2
40
50
60
70
80
90
200
300
(A)
30
-di
T
/dt (A/s)
1
10
2
3
4
5 6 7 8 9
20
30
I
TRM
=
2000 A
T
j
=
T
jmax
5S
TP
12N
8500
400
I
RM
max
min
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
Turn - off time, typical parameter relationship.
60
70
80
90
T
j
(C)
0.6
0.7
0.8
0.9
1.0
5
S
TP
1
2
N
8
5
0
0
f (T )
1
j
Fig. 12 t
q
/t
q1
= f
1
(T
j
)
Fig. 13 t
q
/t
q1
= f
2
(-di
T
/dt)
Fig. 14 t
q
/t
q1
= f
3
(dv/dt)
t
q
= t
q1
f
1
(T
j
)
f
2
(-di
T
/dt)
f
3
(dv/dt)
t
q1
:at normalized values (see page 2)
t
q
: at varying conditions
PDF 
ZIP