ABB Semiconductors AG reserves the right to change specifications without notice.
V
DSM
=
2800 V
I
TAVM
=
3740 A
I
TRMS
=
5880 A
I
TSM
=
60000 A
V
T0
=
0.95 V
r
T
=
0.100 m
Phase Control Thyristor
5STP 33L2800
Doc. No. 5SYA1011-03 Sep. 01
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Part Number
5STP 33L2800 5STP 33L2600 5STP 33L2200 Conditions
V
DRM
V
RRM
2800 V
2600 V
2200 V
f = 50 Hz, t
p
= 10ms
V
RSM1
3000 V
2800 V
2400 V
t
p
= 5ms, single pulse
I
DRM
400 mA
V
DRM
I
RRM
400 mA
V
RRM
T
j
= 125C
dV/dt
crit
1000 V/s
Exp. to 0.67 x V
DRM
, T
j
= 125C
Mechanical data
F
M
Mounting force
nom.
70 kN
min.
63 kN
max.
84 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
m
Weight
1.45 kg
D
S
Surface creepage distance
36 mm
D
a
Air strike distance
15 mm
5STP 33L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1011-03 Sep. 01
page 2 of 6
On-state
I
TAVM
Max. average on-state current
3740 A
Half sine wave, T
C
= 70C
I
TRMS
Max. RMS on-state current
5880 A
I
TSM
Max. peak non-repetitive
60000 A
tp =
10 ms
T
j
= 125C
surge current
65000 A
tp =
8.3 ms
After surge:
I
2
t
Limiting load integral
18000 kA
2
s tp =
10 ms
V
D
= V
R
= 0V
17500 kA
2
s tp =
8.3 ms
V
T
On-state voltage
1.23 V
I
T
=
3000 A
V
T0
Threshold voltage
0.95 V
I
T
= 2000 - 6000 A
T
j
= 125C
r
T
Slope resistance
0.100 m
I
H
Holding current
30-100 mA
T
j
= 25C
15-60 mA
T
j
= 125C
I
L
Latching current
100-
500
mA
T
j
= 25C
100-
300
mA
T
j
= 125C
Switching
di/dt
crit
Critical rate of rise of on-state
250 A/s Cont. f = 50 Hz V
D
0.67V
DRM
, T
j
= 125C
current
500 A/s
I
TRM
= 4500 A
60 sec.
f = 50Hz
I
FG
= 2 A, t
r
= 0.5 s
t
d
Delay time
3.0 s
V
D
= 0.4
V
DRM
I
FG
= 2 A, t
r
= 0.5 s
t
q
Turn-off time
400 s
V
D
0.67V
DRM
I
TRM
= 4500 A, T
j
= 125C
dv
D
/dt = 20V/s V
R
> 200 V, di
T
/dt = -5 A/s
Q
rr
Recovery charge
min
2000 As
max
4000 As
Triggering
V
GT
Gate trigger voltage
2.6 V
T
j
= 25
I
GT
Gate trigger current
400 mA
T
j
= 25
V
GD
Gate non-trigger voltage
0.3 V
V
D
=0.4 x V
DRM
I
GD
Gate non-trigger current
10 mA
V
D
= 0.4 x V
DRM
V
FGM
Peak forward gate voltage
12 V
I
FGM
Peak forward gate current
10 A
V
RGM
Peak reverse gate voltage
10 V
P
G
Gate power loss
3 W
5STP 33L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1011-03 Sep. 01
page 3 of 6
Thermal
T
jmax
Max. operating junction temperature
range
125 C
T
stg
Storage temperature range
-40...140 C
R
thJC
Thermal resistance
14 K/kW
Anode side cooled
junction to case
14 K/kW
Cathode side cooled
7 K/kW
Double side cooled
R
thCH
Thermal resistance case to
3 K/kW
Single side cooled
heat sink
1.5 K/kW
Double side cooled
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
i
1
2
3
4
R
i
(K/kW)
4.7
0.853
1.07
0.49
i
(s)
0.4787
0.0824
0.0104
0.0041
0.001
0.010
0.100
1.000
10.000
t [s]
0
1
2
3
4
5
6
7
8
Z
thJC
[K/kW]
TL
1
180 sine:
add 0.8 K/kW
180 rectangular: add 0.8 K/kW
120 rectangular: add 1 K/kW
60 rectangular: add 2 K/kW
F
m
= 63..84 kN
Double-side cooling
Fig. 1 Transient thermal impedance junction to case.
On-state characteristic model:
IT
D
iT
C
iT
B
A
VT
+
+
+
+
=
)
1
ln(
Valid for i
T
= 400 11000 A
A
B
C
D
0.731174
0.000079
0.017903
0.002314
Fig. 2 On-state characteristics.
T
j
=125C, 10ms half sine
Fig. 3 On-state characteristics.
5STP 33L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1011-03 Sep. 01
page 4 of 6
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
5STP 33L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1011-03 Sep. 01
page 5 of 6
Fig. 8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
Turn - off time, typical parameter relationship.
Fig. 12 t
q
/t
q1
= f
1
(T
j
)
Fig. 13 t
q
/t
q1
= f
2
(-di
T
/dt)
Fig. 14 t
q
/t
q1
= f
3
(dv/dt)
t
q
= t
q1
f
1
(T
j
)
f
2
(-di
T
/dt)
f
3
(dv/dt)
t
q1
:at normalized values (see page 2)
t
q
: at varying conditions
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