1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DSM
=
5200 V
I
TAVM
=
3600 A
I
TRMS
=
5650 A
I
TSM
=
55000 A
V
T0
=
1.03 V
r
T
=
0.16 m
Phase Control Thyristor
5STP 34N5200
Doc. No. 5SYA1002-03 Jan. 02
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol
Conditions
5STP 34N5200 5STP 34N5000 5STP 34N4600
V
DSM,
V
RSM
f = 5 Hz, t
p
= 10ms
5200 V
5000 V
4600 V
V
DRM,
V
RRM
f = 50 Hz, t
p
= 10ms
4400 V
4200 V
4000 V
V
RSM1
t
p
= 5ms, single pulse
5700 V
5500 V
5100 V
dV/dt
crit
Exp. to 0.67 x V
DRM
, T
j
= 125C
2000 V/s
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Forwarde leakage current
I
DSM
V
DSM
,
T
j
= 125C
500
mA
Reverse leakage current
I
RSM
V
RSM
,
T
j
= 125C
500
mA
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
j
= 110C
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Mounting force
F
M
81
90
108
kN
Acceleration
a
Device unclamped
50
m/s
2
Acceleration
a
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Weight
m
2.9
kg
Surface creepage distance
D
S
56
mm
Air strike distance
D
a
22
mm
5STP 34N5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1002-03 Jan. 02
page 2 of 6
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Max. average on-state
current
I
TAVM
Half sine wave, T
c
= 70C
3600
A
RMS on-state current
I
TRMS
5650
A
Max. peak non-repetitive
surge current
I
TSM
55000
A
Limiting load integral
I
2
t
tp = 10 ms, Tj = 125C,
V
D
=V
R
= 0 V
15125
kA
2
s
Max. peak non-repetitive
surge current
I
TSM
60000
A
Limiting load integral
I
2
t
tp = 8.3 ms, Tj = 125C,
V
D
=V
R
=0 V
14940
kA
2
s
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
On-state voltage
V
T
I
T
= 3000 A, T
j
= 125C
1.54
V
Threshold voltage
V
T0
I
T
= 2300 A - 7000 A, T
j
= 125C
1.03
V
Slope resistance
r
T
Tj = 125C
0.16
m
Holding current
I
H
T
j
= 25C
125
mA
T
j
= 125C
75
mA
Latching current
I
L
T
j
= 25C
500
mA
T
j
= 125C
250
mA
Switching
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Critical rate of rise of on-
state current
di/dt
crit
Cont.
f = 50 Hz
250
A/s
Critical rate of rise of on-
state current
di/dt
crit
T
j
= 125C, I
TRM
= 3000 A,
V
D
0.67V
DRM
,
I
FG
= 2 A, t
r
= 0.5 s
Cont.
f = 1Hz
1000
A/s
Circuit-commutated turn-off
time
t
q
T
j
= 125C, I
TRM
= 3000 A,
V
R
= 200 V, di
T
/dt = -5 A/s,
V
D
0.67V
DRM
, dv
D
/dt = 20 V/s,
700
s
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Recovery charge
Q
rr
T
j
= 125C, I
TRM
= 3000 A,
V
R
= 200 V, di
T
/dt = -5 A/s
7000
9000
As
Delay time
t
d
V
D
= 0.4
V
DRM
, I
FG
= 2 A, t
r
= 0.5 s
3
s
5STP 34N5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1002-03 Jan. 02
page 3 of 6
Triggering
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Peak forward gate voltage
V
FGM
12
V
Peak forward gate current
I
FGM
10
A
Peak reverse gate voltage
V
RGM
10
V
Gate power loss
P
G
For DC gate current
3
W
Average gate power loss
P
GAV
see Fig. 9
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Gate trigger voltage
V
GT
T
j
= 25C
2.6
V
Gate trigger current
I
GT
T
j
= 25C
400
mA
Gate non-trigger voltage
V
GD
V
D
= 0.4 x V
DRM
, T
vjmax
= 125C
0.3
V
Gate non-trigger current
I
GD
V
D
= 0.4 x V
DRM
, T
vjmax
= 125C
10
mA
Thermal
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Operating junction
temperature range
T
j
125
C
Storage temperature range T
stg
-40
140
C
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Thermal resistance junction
to case
R
th(j-c)
Double side cooled
5.7
K/kW
R
th(j-c)A
Anode side cooled
11.4
K/kW
R
th(j-c)C
Cathode side cooled
11.4
K/kW
Thermal resistance case to
heatsink
R
th(c-h)
Double side cooled
1
K/kW
R
th(c-h)
Single side cooled
2
K/kW
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
i
1
2
3
4
R
i
(K/kW)
3.4
1.26
0.68
0.35
i
(s)
0.8685
0.1572
0.0219
0.0078
Fig. 1 Transient thermal impedance junction-to case.
5STP 34N5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1002-03 Jan. 02
page 4 of 6
On-state characteristic model:
IT
D
iT
C
iT
B
A
VT
+
+
+
+
=
)
1
ln(
Valid for i
T
= 500 14000 A
A
B
C
D
1.0649e+
1.0500e-4
-3.8879e-2
8.1550e-3
Fig. 2 On-state characteristics.
T
j
=125C, 10ms half sine
Fig. 3 On-state characteristics.
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
5STP 34N5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1002-03 Jan. 02
page 5 of 6
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave.
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
I
GM
I
Gon
100 %
90 %
10 %
I
GM
2..5 A
I
Gon
1.5 I
GT
di
G
/dt
2 A/s
t
r
1 s
t
p
(I
GM
)
5...20s
di
G
/dt
t
r
t
p
(I
GM
)
I
G
(t)
t
t
p
(I
Gon
)
Fig. 8 Recommendet gate current waveform.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
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