1150MP
150 Watts, 50 Volts, Class C
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed
systems in the frequency band 1025-1150 MHz. The device has gold thin-film
metallization for proven highest MTTF. The transistor includes input prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
250 Watts Peak
Maximum Voltage and Current
BVces Collector to Emitter Voltage 60 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 6.0 Amps Peak
Maximum Temperatures
Storage Temperature - 65 to +150
o
C
Operating Junction Temperature + 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
C
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP MAX
UNITS
P
OUT
Power Out
F= 1025-1150 MHz
140
150
W
P
IN
Power Input
Vcc = 50 Volts
30 W
P
G
Power
Gain
PW = 10
sec, DF = 1%
7.0 7.5
dB
c
Efficiency
35
38
%
VSWR
Load Mismatch Tolerance
F = 1090 MHz
10:1
FUNCTIONAL CHARACTERISTICS @ 25
C
BVebo
Emitter to Base Breakdown
Ie = 1 mA
3.5
V
BVces
Collector to Emitter Breakdown Ic = 10mA
65
V
Hfe
DC Current Gain
Vce = 5V, Ic = 500 mA
15
120
Cob
Output Capacitance
Vcb = 50 V, f = 1 MHz
16
pF
jc
2
Thermal Resistance
Tc=25C
0.6
o
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June, 1994
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
1150MP
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
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