ChipFind - документация

Электронный компонент: AM82223-018

Скачать:  PDF   ZIP









AM82223-018
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.



DESCRIPTION:
DESCRIPTION:
The AM82223-018 is a common base, silicon NPN bipolar transistor
designed for high gain and efficiency in hi-rel aerospace telemetry
applications in the 2.2-2.3 GHz frequency range.
It incorporates internal input and output impedance matching
structures along with a rugged, emitter-site ballasted overlay die
geometry capable of withstanding
:1 load mismatch at any phase
angle under full rated operating conditions..
The AM82223-018 is provided in the industry-standard AMPAC
TM
TM
metal/ceramic hermetic package.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25

C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation
58.3
W
I
C
Device Current*
3.0
A
V
CC
Collector-Supply Voltage*
28
V
T
J
Junction Temperature
200

C
T
STG
Storage Temperature
-65 to +200

C
Thermal Data
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance
3.0

C/W
Features
Features
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
:1 VSWR CAPABILITY AT RATED CONDITIONS
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
= 18 W MINIMUM WITH G
P
= 6.5 dB GAIN MINIMUM
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855









AM82223-018
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25

C)
C)
STATIC
STATIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BV
CBO
I
C
= 5 mA I
E
= 0 mA
45
---
---
V
BV
EBO
I
E
= 1 mA I
C
= 0 mA
3.5
---
---
V
I
CBO
V
CB
= 24 V
---
---
2.0
mA
h
FE
V
CE
= 5 V I
C
= 2 A
30
---
300
---


DYNAMIC
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
P
OUT
f = 2.2 - 2.3 GHz P
IN
= 4.0W V
CC
=24V
18
---
---
W
c
f = 2.2 - 2.3 GHz P
IN
= 4.0W V
CC
=24V
40
---
---
%
G
P
f = 2.2 - 2.3 GHz P
IN
= 4.0W V
CC
=24V
6.5
---
---
dB










AM82223-018
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
TEST CIRCUIT
TEST CIRCUIT









AM82223-018
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA