APT100GF60B2R/LR
052-6217 Rev E 6-2002
TO-264
(LR)
G
C
E
T-Max
TM
(B2R)
G
C
E
MIN
TYP
MAX
600
4.5
5.5
6.5
1.6
2.7
1.7
3.4
1.0
5.0
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125C)
Gate-Emitter Leakage Current (V
GE
= 20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Gate-Emitter Voltage
Continuous Collector Current
4
@ T
C
= 25C
Continuous Collector Current @ T
C
= 60C
Pulsed Collector Current
1
@ T
C
= 25C
RBSOA Clamped Inductive Load Current @ R
g
= 11
T
C
= 125C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT100GF60B2R/LR
600
600
20
100
100
280
200
85
295
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
C
APT100GF60B2R
APT100GF60LR
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Fast IGBT
G
C
E
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT100GF60B2R
APT100GF60LR
600V 100A
APT100GF60B2R/LR
052-6217 Rev E 6-2002
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
R
GE
= 25
,
L = 17H, T
j
= 25C
3
See MIL-STD-750 Method 3471
4
The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25C)
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
R
G
= 10
Inductive Switching (150C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +150C
Inductive Switching (25C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +25C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
4365
5020
490
710
300
520
340
510
39
60
195
290
38
80
162
320
230
340
165
330
44
88
150
300
395
590
105
210
7
14
6
12
13
25
47
90
163
330
350
530
90
180
11
22
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
UNIT
C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.20
40
0.22
6.1
10
1.1
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw
)
Symbol
R
JC
R
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
APT100GF60B2R/LR
052-6217 Rev E 6-2002
C, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
V
GE
, GATE-TO-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
T
C
=+25C
T
J
=+150C
SINGLE PULSE
IC = IC2
TJ = +25C
f = 1MHz
9V
10V
8V
C
ies
C
res
11V
7V
11V
10V
8V
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.05
D=0.5
0.2
0.01
SINGLE PULSE
C
oes
V
GE
=17, 15 & 13V
Z
JC
, THERMAL IMPEDANCE (C/W)
V
GE
=17, 15 & 13V
T
C
=-55C
T
C
=+150C
0.1
OPERATION
LIMITED
B Y
VCE (SAT)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25C)
Figure 2, Typical Output Characteristics (T
J
= 150C)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ V
GE
= 15V
Figure 4, Maximum Forward Safe Operating Area
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0
4
8
12
16
20
0
4
8
12
16
20
0
1
2
3
4
1
10
100
600
.01
0.1
1.0
10
50
0
100
200
300
400
500
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
100s
1ms
10ms
0.02
200
160
120
80
40
0
80
60
40
20
0
10,000
5,000
1,000
500
100
9V
T
C
=+25C
7V
200
160
120
80
40
0
200
100
10
1
20
16
12
8
4
0
V
CE
=300V
V
CE
=480V
V
CE
=120V
0.25
0.1
0.05
0.01
0.005
0.001
250sec. Pulse Test
VGE = 15V
APT100GF60B2R/LR
052-6217 Rev E 6-2002
TOTAL SWITCHING ENERGY LOSSES (mJ)
TOTAL SWITCHING ENERGY LOSSES (mJ)
B
V
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
(SAT), COLLECTOR-TO-EMITTER
VOLTAGE
(NORMALIZED)
SATURATION VOLTAGE (VOLTS)
SWITCHING ENERGY LOSSES (mJ)
SWITCHING ENERGY LOSSES (mJ)
I
C
, COLLECTOR CURRENT (AMPERES)
VCC = 0.66 VCES
VGE = +15V
TJ = +25C
IC = IC2
VCC = 0.66 VCES
VGE = +15V
TJ = +125C
RG = 10
VCC = 0.66 VCES
VGE = +15V
RG = 10
0.5 I
C2
I
C2
E
on
E
off
E
on
E
off
0.5 I
C2
I
C2
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
Figure 9, Maximum Collector Current vs Case Temperature
T
J
, JUNCTION TEMPERATURE (C)
R
G
, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature
Figure 11, Typical Switching Energy Losses vs Gate Resistance
T
J
, JUNCTION TEMPERATURE (C)
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
-50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
-50 -25
0
25
50
75 100 125 150
0
20
40
60
80
100
-50 -25
0
25
50
75 100 125 150
0
20
40
60
80
100
0.1
1.0
10
100
1000
180
160
140
120
100
80
60
40
20
0
40
30
20
10
0
8
6
4
2
0
For Both:
Duty Cycle = 50%
TJ = +125C
Tsink = +90C
Gate drive as specified
Power dissapation = 83W
ILOAD = IRMS of fundamental
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
20
10
1
140
10
1
APT100GF60B2R/LR
052-6217 Rev E 6-2002
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Emitter
Gate
Collector
Emitter
Gate
Collector
Collector
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
2-Plcs.
TO-264 Package Outline
T-MAXTM Package Outline
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
ts
= E
on
+ E
off
V
CE
(on)
t
d
(off)
t
d
(on)
t
f
t
r
1
Figure 15, Switching Loss Test Circuit and Waveforms
Figure 16, Resistive Switching Time Test Circuit and Waveforms
2
V
CC
R
G
R
L
=
.5 V
CES
I
C2
10%
90%
V
GE
(on)
V
CE
(off)
V
GE
(off)
2
1
From
Gate Drive
Circuitry
D.U.T.
B
I
C
I
C
90%
10%
90%
10%
10%
90%
E
off
t
f
t
d
(off)
t
d
(on)
t
r
E
on
I
C
V
CLAMP
100uH
V
CHARGE
A
A
B
D.U.T.
DRIVER*
V
C
A
R
G
V
C
V
C
D.U.T.
V
CE
(SAT)
t=2us
PDF 
ZIP