G
C
E
052-6255 Rev A
APT100GF60JRD
600V
140A
The Fast IGBT
TM
is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBTTM combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT
& FRED
SOT-227
G
E
E
C
ISOTOP
"UL Recognized"
PRELIMINAR
Y
APT100GF60JRD
600
600
20
140
100
280
200
390
-55 to 150
300
MAXIMUM RATINGS (IGBT)
All Ratings: T
C
= 25
C unless otherwise specified.
MIN
TYP
MAX
600
4.5
5.5
6.5
2.5
2.7
3.3
3.9
0.8
TBD
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.8mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700
A, T
j
= 25
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125
C)
2
Gate-Emitter Leakage Current (V
GE
=
20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM1
I
CM2
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
C
Continuous Collector Current @ T
C
= 90
C
Pulsed Collector Current
1
@ T
C
= 25
C
Pulsed Collector Current
1
@ T
C
= 90
C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
Watts
C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
PRELIMINAR
Y
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS (IGBT)
APT100GF60JRD
UNIT
C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.32
0.42
40
1.03
29.2
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque (
Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine
)
Symbol
R
JC
R
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25
C)
V
GE
= 15V
V
CC
= 0.8V
CES
I
C
= I
C2
R
G
= 5
Inductive Switching (150
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 5
T
J
= +150
C
Inductive Switching (25
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 5
T
J
= +25
C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
4400
5900
890
1250
290
435
335
40
195
30
105
145
135
40
200
250
140
7.0
5.6
13.6
40
200
210
115
11.0
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
052-6255 Rev A
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
4
Turn-off Switching Energy
Total Switching Losses
4
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
4
Forward Transconductance
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
052-6255 Rev A
APT100GF60JRD
PRELIMINAR
Y
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 60
C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45
C, 8.3ms)
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 100A
Maximum Forward Voltage
I
F
= 200A
I
F
= 100A, T
J
= 150
C
STATIC ELECTRICAL CHARACTERISTICS (FRED)
UNIT
Volts
Amps
UNIT
Volts
MIN
TYP
MAX
2.0
1.7
1.7
APT100GF60JRD
600
100
170
1000
MAXIMUM RATINGS (FRED)
All Ratings: T
C
= 25
C unless otherwise specified.
MIN
TYP
MAX
60
75
60
92
185
185
27
38
42
54
810
1930
10.2
10.2
600
400
UNIT
ns
Amps
nC
Volts
A/
s
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt
= -15A/
s, V
R
= 30V,
T
J
= 25
C
Reverse Recovery Time
T
J
= 25
C
I
F
= 100A, di
F
/dt
= -800A/
s, V
R
= 350V
T
J
= 100
C
Forward Recovery Time
T
J
= 25
C
I
F
= 100A, di
F
/dt
= 800A/
s, V
R
= 350V
T
J
= 100
C
Reverse Recovery Current
T
J
= 25
C
I
F
= 100A, di
F
/dt
= -800A/
s, V
R
= 350V
T
J
= 100
C
Recovery Charge
T
J
= 25
C
I
F
= 100A, di
F
/dt
= -800A/
s, V
R
= 350V
T
J
= 100
C
Forward Recovery Voltage
T
J
= 25
C
I
F
= 100A, di
F
/dt
= 800A/
s, V
R
= 350V
T
J
= 100
C
Rate of Fall of Recovery Current
T
J
= 25
C
I
F
= 100A, di
F
/dt
= -800A/
s, V
R
= 350V
(See Figure 10)
T
J
= 100
C
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
PRELIMINAR
Y
Z
JC
, THERMAL IMPEDANCE
t
rr
, REVERSE RECOVERY TIME
I
RRM
, REVERSE RECOVERY CURRENT
I
F
, FORWARD CURRENT
(
C/W)
(nano-SECONDS)
(AMPERES)
(AMPERES)
t
fr
, FORWARD RECOVERY TIME
K
f
, DYNAMIC PARAMETERS
Q
rr
, REVERSE RECOVERY CHARGE
(nano-SECONDS)
(NORMALIZED)
(nano-COULOMBS)
V
fr
, FORWARD RECOVERY VOLTAGE
(VOLTS)
V
F
, ANODE-TO-CATHODE VOLTAGE (VOLTS)
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
Figure 1, Forward Voltage Drop vs Forward Current
Figure 2, Reverse Recovery Charge vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 3, Reverse Recovery Current vs Current Slew Rate
Figure 4, Dynamic Parameters vs Junction Temperature
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT100GF60JRD
052-6255 Rev A
D=0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
0
1
2
3
4
10
50
100
500
1000
0
200
400
600
800
1000
-50
-25
0
25
50
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
300
240
180
120
60
0
60
50
40
30
20
10
0
400
300
200
100
0
0.5
0.1
0.05
0.01
0.005
0.001
TJ = 100
C
VR = 350V
TJ = 100
C
VR = 350V
TJ = 100
C
VR = 350V
IF = 100A
4000
3000
2000
1000
0
1.6
1.2
0.8
0.4
0.0
3000
2500
2000
1500
1000
500
0
15
12.5
10
7.5
5
2.5
0
T
J
= 150
C
T
J
= 100
C
T
J
= -55
C
T
J
= 25
C
50A
200A
100A
I
RRM
t
rr
Q
rr
Q
rr
t
rr
200A
100A
50A
TJ = 100
C
VR = 350V
50A
200A
100A
t
fr
V
fr
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.01
PRELIMINAR
Y
APT100GF60JRD
052-6255 Rev A
PRELIMINAR
Y
SOT-227 (ISOTOP
) Package Outline
PEARSON 411
CURRENT
TRANSFORMER
0.5 IRRM
di
F
/dt Adjust
30
H
D.U.T.
+15v
-15v
0v
Vr
4
3
1
2
5
5
0.75 IRRM
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F
/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of I
F
Qrr - Area Under the Curve Defined by I
RRM
and trr.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Current Falling Through Zero to a Tangent Line
{
diM/dt
}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM
.
6
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
Figure 8, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2
(
trr . I
RRM
)
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter
Collector
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
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