050-5841 Rev A 3-2004

MAXIMUM RATINGS

All Ratings: T

= 25°C unless otherwise specified.

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

UNIT

Volts

Amps

Ohms

µA

Volts

MIN

TYP

MAX

100
144

0.011

250

1000
±100

APT10M11JVFR

100
144
576
±30
±40
450

3.6

-55 to 150

300
144

2500

APT10M11JVFR

100V 144A 0.011

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

= 0V, I

= 250µA)

On State Drain Current

> I

D(on)

x R

DS(on)

Max, V

= 10V)

Drain-Source On-State Resistance

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

= V

DSS

, V

= 0V)

Zero Gate Voltage Drain Current (V

= 0.8 V

DSS

, V

= 0V, T

= 125°C)

Gate-Source Leakage Current (V

= ±30V, V

= 0V)

Gate Threshold Voltage (V

= V

, I

= 2.5mA)

Symbol

DSS

GSM

STG

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

= 25°C

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

STATIC ELECTRICAL CHARACTERISTICS

Symbol

DSS

D(on)

DS(on)

DSS

GSS

GS(th)

SOT-227

ISOTOP

"UL Recognized"

Power MOS V

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

· Faster Switching

· Avalanche Energy Rated

· Lower Leakage

· Popular SOT-227 Package

POWER MOS V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

DYNAMIC CHARACTERISTICS

APT10M11JVFR

050-5841 Rev A 3-2004

, THERMAL IMPEDANCE (°C/W)

-5

-4

-3

-2

-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZJC + TC

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)
Pulsed Source Current

(Body Diode)

Diode Forward Voltage

= 0V, I

= -I

[Cont.])

Peak Diode Recovery

Reverse Recovery Time
(I

= -I

[Cont.],

= 100A/µs)

Reverse Recovery Charge
(I

= -I

[Cont.],

= 100A/µs)

Peak Recovery Current
(I

= -I

[Cont.],

= 100A/µs)

Symbol

RRM

UNIT

Amps

Volts

V/ns

µC

Amps

Symbol

iss

oss

rss

(on)

(off)

Characteristic
Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge
Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

= 0V

= 25V

f = 1 MHz

= 10V

= 0.5 V

DSS

= I

[Cont.] @ 25°C

= 15V

= 0.5 V

DSS

= I

[Cont.] @ 25°C

= 0.6

MIN

TYP

MAX

8600

10380

3200

4480

1180

1770

300

450

145

110

165

UNIT

MIN

TYP

MAX

144
576

1.3

= 25°C

220

= 125°C

420

= 25°C

0.8

= 125°C

3.0

= 25°C

= 125°C

THERMAL/PACKAGE CHARACTERISTICS

Symbol

Isolation

Torque

MIN

TYP

MAX

0.28

2500

UNIT

°C/W

Volts

lb·in

Characteristic

Junction to Case
Junction to Ambient

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

Repetitive Rating: Pulse width limited by maximum junction

See MIL-STD-750 Method 3471

temperature.

Starting T

+25°C, L = 241µH, R

, Peak I

= 144A

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

-I

[Cont.],

= 100A/µs, V

DSS

150°C, R

= 2.0

= 100V.

APT Reserves the right to change, without notice, the specifications and information contained herein.

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

FIGURE 5, R

(ON) vs DRAIN CURRENT

, CASE TEMPERATURE (°C)

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

, JUNCTION TEMPERATURE (°C)

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

(ON), DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

(TH), THRESHOLD VOLTAGE

DSS

, DRAIN-TO-SOURCE BREAKDOWN

(ON), DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

VOLTAGE (NORMALIZED)

0.5

1.0

1.5

2.0

2.5

100

150

200

250

300

100

125

150

-50 -25

100 125 150

-50 -25

75 100 125 150

-50 -25

75 100 125 150

D = 0.5 ID [Cont.]

GS = 10V

200

160

120

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

200

160

120

200

160

120

150

120

2.00

1.75

1.50

1.25

1.00

0.75

0.50

050-5841 Rev A 3-2004

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

VGS=7V, 10V & 15V

VGS=10 & 15V

VGS=10V

VGS=20V

TJ = +25°C

TJ = -55°C

TJ = +125°C

TJ = +25°C

TJ = -55°C

5.5V

4.5V

5.5V

4.5V

NORMALIZED TO

= 10V @ 0.5 I

D [Cont.]

APT10M11JVFR

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

, TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

, REVERSE DRAIN CURRENT (AMPERES)

C, CAPACITANCE (pF)

APT10M11JVFR

TC =+25°C

TJ =+150°C

SINGLE PULSE

600

100

050-5841 Rev A 3-2004

OPERATION HERE

LIMITED BY RDS (ON)

100

.01

100

200

300

400

500

0.4

0.8

1.2

1.6

2.0

30,000

10,000

5,000

1,000

500

400

100

VDS=50V

VDS=20V

VDS=80V

D = 50A

100µS

10mS

100mS

1mS

TJ =+150°C

TJ =+25°C

Crss

Coss

Ciss

Coss

Ciss

APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

ISOTOP

is a Registered Trademark of SGS Thomson.

SOT-227 (ISOTOP

) Package Outline

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)
38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)
8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

* Source

Drain

Gate

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

* Source

Source terminals are shorted

internally. Current handling

capability is equal for either

Source terminal.

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